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FB
EN
RT GND
SW
LM5001
VCC
COMP
+12V to +36V +48V
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LM5001x High-Voltage Switch-Mode Regulator
1 Features 3 Description
The LM5001 high-voltage switch-mode regulator
1 AEC-Q100 Qualified (TJ= –40°C to 125°C) features all of the functions necessary to implement
Integrated 75-V N-Channel MOSFET efficient high-voltage Boost, Flyback, SEPIC and
Ultra-Wide Input Voltage Range from Forward converters, using few external components.
3.1 V to 75 V This easy-to-use regulator integrates a 75-V N-
Channel MOSFET with a 1-A peak current limit.
Integrated High Voltage Bias Regulator Current mode control provides inherently simple loop
Adjustable Output Voltage compensation and line-voltage feed-forward for
1.5% Output Voltage Accuracy superior rejection of input transients. The switching
frequency is set with a single resistor and is
Current Mode Control with Selectable programmable up to 1.5 MHz. The oscillator can also
Compensation be synchronized to an external clock. Additional
Wide Bandwidth Error Amplifier protection features include: current limit, thermal
Integrated Current Sensing and Limiting shutdown, undervoltage lockout and remote
shutdown capability.
Integrated Slope Compensation
85% Maximum Duty Cycle Limit Device Information(1)
Single Resistor Oscillator Programming DEVICE NAME PACKAGE BODY SIZE
Oscillator Synchronization Capability SOIC (8) 4.9 mm x 3.91 mm
LM5001
Enable / Undervoltage Lockout (UVLO) Pin WSON (8) 4 mm x 4 mm
Thermal Shutdown LM5001Q1 SOIC (8) 4.9 mm x 3.91 mm
(1) For all available packages, see the orderable addendum at
2 Applications the end of the datasheet.
DC-DC Power Supplies for Industrial,
Communications, and Automotive Applications
Boost, Flyback, SEPIC and Forward Converter
Topologies
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
7.2 Functional Block Diagram ........................................ 8
1 Features.................................................................. 17.3 Feature Description .................................................. 9
2 Applications ........................................................... 18 Applications and Implementation ...................... 11
3 Description............................................................. 18.1 Application Information............................................ 11
4 Revision History..................................................... 28.2 Typical Applications ................................................ 14
5 Pin Configuration and Functions......................... 39 Layout................................................................... 18
6 Specifications......................................................... 49.1 Layout Guidelines ................................................... 18
6.1 Absolute Maximum Ratings ...................................... 410 Device and Documentation Support................. 19
6.2 ESD Ratings.............................................................. 410.1 Related Links ........................................................ 19
6.3 Recommended Operating Conditions....................... 410.2 Trademarks........................................................... 19
6.4 Thermal Information.................................................. 410.3 Electrostatic Discharge Caution............................ 19
6.5 Electrical Characteristics........................................... 410.4 Glossary................................................................ 19
6.6 Typical Characteristics ............................................. 611 Mechanical, Packaging, and Orderable
7 Detailed Description.............................................. 8Information........................................................... 19
7.1 Overview .................................................................. 8
4 Revision History
Changes from Revision G (April 2014) to Revision H Page
Changed to match the new ESD table................................................................................................................................... 4
Changes from Revision F (March 2013) to Revision G Page
Added LM5001-Q1 option to Electrical Characteristics table................................................................................................. 5
Changes from Revision E (March 2013) to Revision F Page
Added availability of LM5001-Q1 option ................................................................................................................................ 1
Changed to new TI standard: Added Handling Ratings table and the Device and Documentation Support section. ........... 1
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1
4
3
5
8
7
6
EP
SW
VIN
EN
COMP
VCC
FB
RT
GND
2
VCC
GND RT
EN
COMP
FB
VIN
SW 1
4
3
2
8
5
7
6
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5 Pin Configuration and Functions
SOIC (D) 8 Pins
Top View
WSON (NGT) 8 Pins
Top View
Pin Functions
PIN NAME TYPE DESCRIPTION
SOIC WSON
1 3 SW Switch pin The drain terminal of the internal power MOSFET.
2 4 VIN Input supply pin Nominal operating range: 3.1 V to 75 V.
VCC tracks VIN up to 6.9 V. Above VIN = 6.9 V, VCC is
regulated to 6.9 V. A 0.47-µF or greater ceramic decoupling
Bias regulator output, or input for external capacitor is required. An external voltage (7 V 12 V) can
3 5 VCC bias supply be applied to this pin which disables the internal VCC
regulator to reduce internal power dissipation and improve
converter efficiency.
Internal reference for the regulator control functions and the
4 6 GND Ground power MOSFET current sense resistor connection.
The internal oscillator is set with a resistor, between this pin
and the GND pin. The recommended frequency range is 50
Oscillator frequency programming and KHz to 1.5 MHz. The RT pin can accept synchronization
5 7 RT optional synchronization pulse input pulses from an external clock. A 100-pF capacitor is
recommended for coupling the synchronizing clock to the
RT pin.
This pin is connected to the inverting input of the internal
Feedback input from the regulated output
6 8 FB error amplifier. The 1.26-V reference is internally connected
voltage to the non-inverting input of the error amplifier.
The loop compensation network should be connected
between the COMP pin and the FB pin. COMP pull-up is
Open drain output of the internal error
7 1 COMP provided by an internal 5-kresistor which may be used to
amplifier bias an opto-coupler transistor (while FB is grounded) for
isolated ground applications.
An external voltage divider can be used to set the line
Enable / Undervoltage Lock-Out / undervoltage lockout threshold. If the EN pin is left
8 2 EN Shutdown input unconnected, a 6-µA pull-up current source pulls the EN pin
high to enable the regulator.
Exposed metal pad on the underside of the package with a
resistive connection to pin 6. It is recommended to connect
NA EP EP Exposed Pad, WSON only this pad to the PC board ground plane in order to improve
heat dissipation.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT
VIN to GND 76 V
SW to GND (Steady State) –0.3 76 V
VCC, EN to GND 14 V
COMP, FB, RT to GND –0.3 7 V
Maximum Junction Temperature 150 °C
Storage Temperature Range, Tstg -65 150 °C
6.2 ESD Ratings VALUE UNIT
Human-body model (HBM), per AEC Q100-002(1) ±2000
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions MIN NOM MAX UNIT
VIN 3.1 75 V
Operating Junction Temperature 40 125 °C
6.4 Thermal Information LM5001-Q1 LM5001
THERMAL METRIC SOIC SOIC WSON UNIT
(8 PINS)
RθJA Junction-to-ambient thermal resistance 140 140 40 °C/W
RθJCtop Junction-to-case (top) thermal resistance 32 32 4.5
6.5 Electrical Characteristics
Minimum and Maximum limits are ensured through test, design, or statistical correlation, over the junction temperature (TJ)
range of –40°C to +125°C. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for
reference purposes only. VVIN = 10 V, RRT = 48.7 kunless otherwise stated(1).
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Startup Regulator
VVCC-REG VCC Regulator Output 6.55 6.85 7.15 V
VCC Current Limit VVCC = 6 V 15 20 mA
VCC UVLO Threshold VVCC increasing 2.6 2.8 3 V
VCC Undervoltage Hysteresis 0.1
Bias Current (IIN) VFB = 1.5 V 3.1 4.5 mA
IQShutdown Current (IIN) VEN = 0V 95 130 µA
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate TI’s Average Outgoing Quality Level (AOQL).
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Electrical Characteristics (continued)
Minimum and Maximum limits are ensured through test, design, or statistical correlation, over the junction temperature (TJ)
range of –40°C to +125°C. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for
reference purposes only. VVIN = 10 V, RRT = 48.7 kunless otherwise stated(1).
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
EN Thresholds
EN Shutdown Threshold VEN increasing 0.25 0.45 0.65
EN Shutdown Hysteresis 0.1 V
EN Standby Threshold VEN increasing 1.2 1.26 1.32
EN Standby Hysteresis 0.1
EN Current Source 6 µA
MOSFET Characteristics
MOSFET RDS(ON) plus LM5001 490 800
ID= 0.5 A m
Current Sense Resistance LM5001-Q1 490 880
MOSFET Leakage Current VSW = 75 V 0.05 5 µA
MOSFET Gate Charge VVCC = 6.9 V 4.5 nC
Current Limit
ILIM Cycle by Cycle Current Limit 0.8 1.0 1.2 A
Cycle by Cycle Current Limit Delay 100 200 ns
Oscillator
FSW1 Frequency1 RRT = 48.7 k225 260 295 KHz
FSW2 Frequency2 RRT = 15.8 k660 780 900
VRT-SYNC SYNC Threshold 2.2 2.6 3.2 V
SYNC Pulse Width Minimum VRT > VRT-SYNC + 0.5 V 15 ns
PWM Comparator
Maximum Duty Cycle 80% 85% 90%
Min On-time VCOMP > VCOMP-OS 35 ns
Min On-time VCOMP < VCOMP-OS 0
VCOMP-OS COMP to PWM Comparator Offset 0.9 1.30 1.55 V
Error Amplifier
VFB-REF Internal reference
Feedback Reference Voltage 1.241 1.260 1.279 V
VFB = VCOMP
FB Bias Current 10 nA
DC Gain 72 dB
COMP Sink Current VCOMP = 250 mV 2.5 mA
COMP Short Circuit Current VFB = 0, VCOMP = 0 0.9 1.2 1.5
COMP Open Circuit Voltage VFB = 0 4.8 5.5 6.2 V
COMP to SW Delay 50 ns
Unity Gain Bandwidth 3 MHz
Thermal Shutdown
TSD Thermal Shutdown Threshold 165 °C
Thermal Shutdown Hysteresis 20
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6.6 Typical Characteristics
Figure 1. Efficiency, Boost Converter Figure 2. VFB vs Temperature
Figure 3. IQ(Non-Switching) vs VIN Figure 4. VCC vs VIN
Figure 5. RDS(ON) vs VCC Figure 6. RDS(ON) vs Temperature
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Typical Characteristics (continued)
Figure 7. ILIM vs VCC Figure 8. ILIM vs VCC vs Temperature
Figure 9. FSW vs RRT Figure 10. FSW vs Temperature
Figure 11. FSW vs VCC Figure 12. IEN vs VVIN vs Temperature
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VIN
SW
DRIVER
PWM
RT CLK
VCC
HV-LDO
EN
FB
GND
5k
COMP
MAX DUTY
SHUTDOWN
STANDBY
UVLO
CLK
(Leading Edge Blanking)
RAMP
S
R
Q
VCC ENABLE
ENABLE
Disable
VCC
ENABLE
CS
CS
RAMP
CS
SLOPE COMP RAMP
450 mV
0
+
Disable
ENABLE
CLK
×
CURRENT
LIMIT
1.5V
1.3V
+5V
1.26V
CURRENT
SENSE
50 m:
1.26V
+5V
+6.9V
2.8V
0.45V
6 PAREFERENCE
GENERATOR
Av = 30
0.7
THERMAL
STANDBY
(165oC)
OSCILLATOR
WITH
SYNC
CAPABILITY
1.26V
+
-
+
-
+
-
+
-
+
-
-
++
-
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7 Detailed Description
7.1 Overview
The LM5001 high voltage switching regulator features all the functions necessary to implement an efficient boost,
flyback, SEPIC or forward current mode power converter. The operation can be best understood by referring to
the block diagram. At the start of each cycle, the oscillator sets the driver logic and turns on the power MOSFET
to conduct current through the inductor or transformer. The peak current in the MOSFET is controlled by the
voltage at the COMP pin. The COMP voltage increases with larger loads and decrease with smaller loads. This
voltage is compared with the sum of a voltage proportional to the power MOSFET current and an internally
generated Slope Compensation ramp. Slope Compensation is used in current mode PWM architectures to
eliminate sub-harmonic current oscillation that occurs with static duty cycles greater than 50%. When the
summed signal exceeds the COMP voltage, the PWM comparator resets the driver logic, turning off the power
MOSFET. The driver logic is then set by the oscillator at the end of the switching cycle to initiate the next power
period.
The LM5001 has dedicated protection circuitry to protect the IC from abnormal operating conditions. Cycle-by-
cycle current limiting prevents the power MOSFET current from exceeding 1 A. This feature can also be used to
soft-start the regulator. Thermal Shutdown circuitry holds the driver logic in reset when the die temperature
reaches 165°C, and returns to normal operation when the die temperature drops by approximately 20°C. The EN
pin can be used as an input voltage undervoltage lockout (UVLO) during start-up to prevent operation with less
than the minimum desired input voltage.
7.2 Functional Block Diagram
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7.3 Feature Description
7.3.1 High-Voltage VCC Regulator
The LM5001 VCC Low Drop Out (LDO) regulator allows the LM5001 to operate at the lowest possible input
voltage. The VCC pin voltage is very nearly equal to the input voltage from 2.8 V up to approximately 6.9 V. As
the input voltage continues to increase, the VCC pin voltage is regulated at the 6.9 V set-point. The total input
operating range of the VCC LDO regulator is 3.1 V to 75 V.
The output of the VCC regulator is current limited to 20 mA. During power up, the VCC regulator supplies current
into the required decoupling capacitor (0.47 µF or greater ceramic capacitor) at the VCC pin. When the voltage at
the VCC pin exceeds the VCC UVLO threshold of 2.8 V and the EN pin is greater than 1.26 V the PWM
controller is enabled and switching begins. The controller remains enabled until VCC falls below 2.7 V or the EN
pin falls below 1.16 V.
An auxiliary supply voltage can be applied to the VCC pin to reduce the IC power dissipation. If the auxiliary
voltage is greater than 6.9 V, the internal regulator essentially shuts off, and internal power dissipation decreases
by the VIN voltage times the operating current. The overall converter efficiency improves if the VIN voltage is
much higher than the auxiliary voltage. The externally applied VCC voltage should not exceed 14 V. The VCC
regulator series pass MOSFET includes a body diode (Functional Block Diagram ) between VCC and VIN that
should not be forward biased in normal operation. Therefore, the auxiliary VCC voltage should never exceed the
VIN voltage.
In high voltage applications extra care should be taken to ensure the VIN pin does not exceed the absolute
maximum voltage rating of 76 V. Voltage ringing on the VIN line during line transients that exceeds the Absolute
Maximum Ratings damages the IC. Both careful PC board layout and the use of quality bypass capacitors
located close to the VIN and GND pins are essential.
7.3.2 Oscillator
A single external resistor connected between RT and GND pins sets the LM5001 oscillator frequency. To set a
desired oscillator frequency (FSW), the necessary value for the RT resistor can be calculated from:
(1)
The tolerance of the external resistor and the frequency tolerance indicated in the Electrical Characteristics must
be taken into account when determining the worst case frequency range.
7.3.3 External Synchronization
The LM5001 can be synchronized to the rising edge of an external clock. The external clock must have a higher
frequency than the free running oscillator frequency set by the RT resistor. The clock signal should be coupled
through a 100 pF capacitor into the RT pin. A peak voltage level greater than 2.6 V at the RT pin is required for
detection of the sync pulse. The DC voltage across the RT resistor is internally regulated at 1.5 V. The negative
portion of the AC voltage of the synchronizing clock is clamped to this 1.5 V by an amplifier inside the LM5001
with ~100 output impedance. Therefore, the AC pulse superimposed on the RT resistor must have positive
pulse amplitude of 1.1 V or greater to successfully synchronize the oscillator. The sync pulse width measured at
the RT pin should have a duration greater than 15 ns and less than 5% of the switching period. The sync pulse
rising edge initiates the internal CLK signal rising edge, which turns off the power MOSFET. The RT resistor is
always required, whether the oscillator is free running or externally synchronized. The RT resistor should be
located very close to the device and connected directly to the RT and GND pins of the LM5001.
7.3.4 Enable / Standby
The LM5001 contains a dual level Enable circuit. When the EN pin voltage is below 450 mV, the IC is in a low
current shutdown mode with the VCC LDO disabled. When the EN pin voltage is raised above the shutdown
threshold but below the 1.26 V standby threshold, the VCC LDO regulator is enabled, while the remainder of the
IC is disabled. When the EN pin voltage is raised above the 1.26 V standby threshold, all functions are enabled
and normal operation begins. An internal 6 µA current source pulls up the EN pin to activate the IC when the EN
pin is left disconnected.
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PWM
FB
5k
COMP
5V
VOUT
LM5001
1
1
¸
¸
¹
·
¨
¨
©
§
1
C1
C2
R2
RFEEDBACK
R1
1.3V
1.26V
FDC_POLE =
FPOLE =
FZERO =
2S x R1 x(C1 + C2)
C1 xC2
2S x R2 xC2
2S x R2 xC1 + C2
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Feature Description (continued)
An external set-point resistor divider from VIN to GND can be used to determine the minimum operating input
range of the regulator. The divider must be designed such that the EN pin exceeds the 1.26 V standby threshold
when VIN is in the desired operating range. The internal 6 µA current source should be included when
determining the resistor values. The shutdown and standby thresholds have 100 mV hysteresis to prevent noise
from toggling between modes. When the VIN voltage is below 3.5 VDC during start-up and the operating
temperature is below –20°C, the EN pin should have a pull-up resistor provides 2 µA or greater current. The EN
pin is internally protected by a 6 V Zener diode through a 1 kresistor. The enabling voltage may exceed the
Zener voltage, however the Zener current should be limited to less than 4 mA.
7.3.5 Error Amplifier and PWM Comparator
An internal high gain error amplifier generates an error signal proportional to the difference between the
regulated output voltage and an internal precision reference. The output of the error amplifier is connected to the
COMP pin allowing the user to add loop compensation, typically a Type II network, as illustrated in Figure 13.
This network creates a low frequency pole that rolls off the high DC gain of the amplifier, which is necessary to
accurately regulate the output voltage. FDC_POLE is the closed loop unity gain (0 dB) frequency of this pole. A zero
provides phase boost near the closed loop unity gain frequency, and a high frequency pole attenuates switching
noise. The PWM comparator compares the current sense signal from the current sense amplifier to the error
amplifier output voltage at the COMP pin.
Figure 13. Type II Compensator
When isolation between primary and secondary circuits is required, the Error Amplifier is usually disabled by
connecting the FB pin to GND. This allows the COMP pin to be driven directly by the collector of an opto-coupler.
In isolated designs the external error amplifier is located on the secondary circuit and drives the opto-coupler
LED. The compensation network is connected to the secondary side error amplifier. An example of an isolated
regulator with an opto-coupler is shown in Figure 19.
7.3.6 Current Amplifier and Slope Compensation
The LM5001 employs peak current mode control which also provides a cycle-by-cycle over current protection
feature. An internal 50 mcurrent sense resistor measures the current in the power MOSFET source. The sense
resistor voltage is amplified 30 times to provide a 1.5 V/A signal into the current limit comparator. Current limiting
is initiated if the internal current limit comparator input exceeds the 1.5 V threshold, corresponding to 1 A. When
the current limit comparator is triggered, the SW output pin immediately switches to a high impedance state.
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Feature Description (continued)
The current sense signal is reduced to a scale factor of 1.05 V/A for the PWM comparator signal. The signal is
then summed with a 450 mV peak slope compensation ramp. The combined signal provides the PWM
comparator with a control signal that reaches 1.5 V when the MOSFET current is 1 A. For duty cycles greater
than 50%, current mode control circuits are subject to sub-harmonic oscillation (alternating between short and
long PWM pulses every other cycle). Adding a fixed slope voltage ramp signal (slope compensation) to the
current sense signal prevents this oscillation. The 450 mV ramp (zero volts when the power MOSFET turns on,
and 450 mV at the end of the PWM clock cycle) adds a fixed slope to the current sense ramp to prevent
oscillation.
To prevent erratic operation at low duty cycle, a leading edge blanking circuit attenuates the current sense signal
when the power MOSFET is turned on. When the MOSFET is initially turned on, current spikes from the power
MOSFET drain-source and gate-source capacitances flow through the current sense resistor. These transient
currents normally cease within 50 ns with proper selection of rectifier diodes and proper PC board layout.
7.3.7 Thermal Protection
Internal Thermal Shutdown circuitry is provided to protect the IC in the event the maximum junction temperature
is exceeded. When the 165°C junction temperature threshold is reached, the regulator is forced into a low power
standby state, disabling all functions except the VCC regulator. Thermal hysteresis allows the IC to cool down
before it is re-enabled. Note that since the VCC regulator remains functional during this period, the soft-start
circuit shown in Figure 17 should be augmented if soft-start from Thermal Shutdown state is required.
7.3.8 Power MOSFET
The LM5001 switching regulator includes an N-Channel MOSFET with 440-mon-resistance. The on-resistance
of the LM5001 MOSFET varies with temperature as shown in the Typical Characteristics graph. The typical total
gate charge for the MOSFET is 4.5 nC which is supplied from the VCC pin when the MOSFET is turned on.
8 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
This information is intended to provide guidelines for the power supply designer using the LM5001.
8.1.1 VIN
The voltage applied to the VIN pin can vary within the range of 3.1 V to 75 V. The current into the VIN pin
depends primarily on the gate charge of the power MOSFET, the switching frequency, and any external load on
the VCC pin. It is recommended the filter shown in Figure 14 be used to suppress transients which may occur at
the input supply. This is particularly important when VIN is operated close to the maximum operating rating of the
LM5001.
When power is applied and the VIN voltage exceeds 2.8 V with the EN pin voltage greater than 0.45 V, the VCC
regulator is enabled, supplying current into the external capacitor connected to the VCC pin. When the VIN
voltage is between 2.8 V and 6.9 V, the VCC voltage is approximately equal to the VIN voltage. When the
voltage on the VCC pin exceeds 6.9 V, the VCC pin voltage is regulated at 6.9 V. In typical flyback applications,
an auxiliary transformer winding is connected through a diode to the VCC pin. This winding must raise the VCC
voltage above 6.9 V to shut off the internal start-up regulator. The current requirements from this winding are
relatively small, typically less than 20 mA. If the VIN voltage is much higher than the auxiliary voltage, the
auxiliary winding significantly improves conversion efficiency. It also reduces the power dissipation within the
LM5001. The externally applied VCC voltage should never exceed 14 V. Also the applied VCC should never
exceed the VIN voltage to avoid reverse current through the internal VCC to VIN diode shown in the LM5001
block diagram.
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R2 = 1.26V
IDIVIDER + 6 PA
R1 = VPWR - 1.26V
IDIVIDER
10
VIN
VPWR
0.1 PFLM5001
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Application Information (continued)
Figure 14. Input Transient Protection
8.1.2 SW Pin
Attention must be given to the PC board layout for the SW pin which connects to the power MOSFET drain.
Energy can be stored in parasitic inductance and capacitance which cause switching spikes that negatively effect
efficiency, and conducted and radiated emissions. These connections should be as short as possible to reduce
inductance and as wide as possible to reduce resistance. The loop area, defined by the SW and GND pin
connections, the transformer or inductor terminals, and their respective return paths, should be minimized.
8.1.3 EN / UVLO Voltage Divider Selection
Two dedicated comparators connected to the EN pin are used to detect under-voltage and shutdown conditions.
When the EN pin voltage is below 0.45 V, the controller is in a low current shutdown mode where the VIN current
is reduced to 95 µA. For an EN pin voltage greater than 0.45 V but less than 1.26 V the controller is in standby
mode, with all internal circuits operational, but the PWM gate driver signal is blocked. Once the EN pin voltage is
greater than 1.26 V, the controller is fully enabled. Two external resistors can be used to program the minimum
operational voltage for the power converter as shown in Figure 15. When the EN pin voltage falls below the 1.26
V threshold, an internal 100 mV threshold hysteresis prevents noise from toggling the state, so the voltage must
be reduced to 1.16 V to transition to standby. Resistance values for R1 and R2 can be determined from
Equation 2 and Equation 3:
(2)
(3)
where VPWR is the desired turn-on voltage and IDIVIDER is an arbitrary current through R1 and R2.
For example, if the LM5001 is to be enabled when VPWR reaches 16 V, IDIVIDER could be chosen as 501 µA which
would set R1 to 29.4 kand R2 to 2.49 k. The voltage at the EN pin should not exceed 10 V unless the current
into the 6 V protection Zener diode is limited below 4 mA. The EN pin voltage should not exceed 14 V at any
time. Be sure to check both the power and voltage rating (some 0603 resistors are rated as low as 50 V) for the
selected R1 resistor.
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EN
LM5001
VPWR
STANDBY
R2 OFF
OFF
STANDBY
R1
1.26V
0.45V
EN
LM5001
Disable PWM Controller
R1
Disable VCC Regulator
VIN
1.26V
0.45V
6 PA
VPWR
R2
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www.ti.com
SNVS484H JANUARY 2007REVISED JULY 2015
Application Information (continued)
Figure 15. Basic EN (UVLO) Configuration
Remote configuration of the controller’s operational modes can be accomplished with open drain device(s)
connected to the EN pin as shown in Figure 16. A MOSFET or an NPN transistor connected to the EN pin can
force the regulator into the low power ‘off’ state. Adding a PN diode in the drain (or collector) provides the offset
to achieve the standby state. The advantage of standby is that the VCC LDO is not disabled and external
circuitry powered by VCC remains functional.
Figure 16. Remote Standby and Disable Control
8.1.4 Soft-Start
Soft-start (SS) can be implemented with an external capacitor connected to COMP through a diode as shown in
Figure 17. The COMP discharge MOSFET conducts during Shutdown and Standby modes to keep the COMP
voltage below the PWM offset (1.3 V), which inhibits PWM pulses. The error amplifier attempts to raise the
COMP voltage after the EN pin exceeds the 1.26-V standby threshold. Because the error amplifier output can
only sink current, the internal COMP pull-up resistor (~5 k) supplies the charging current to the SS capacitor.
The SS capacitor causes the COMP voltage to gradually increase, until the output voltage achieves regulation
and FB assumes control of the COMP and the PWM duty cycle. The SS capacitor continues charging through a
large resistance, RSS, preventing the SS circuit from interfering with the normal error amplifier function. During
shutdown, the VCC diode discharges the SS capacitor.
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: LM5001 LM5001-Q1
PWM
VCC
FB
5k
COMP
5V
VOUT
LM5001
SHUTDOWN
& STANDBY
SOFT-START
CAPACITOR
RSS
1.3V
1.26V
LM5001
,
LM5001-Q1
SNVS484H JANUARY 2007REVISED JULY 2015
www.ti.com
Application Information (continued)
Figure 17. Soft-Start
8.2 Typical Applications
Figure 18,Figure 19,Figure 20,Figure 21, and Figure 22 present examples of a Non-Isolated Flyback, Isolated
Flyback, Boost, 24-V SEPIC and a 12-V Automotive range SEPIC converters utilizing the LM5001 switching
regulator.
8.2.1 Non-Isolated Flyback
The Non-Isolated Flyback converter (Figure 18) utilizes the internal voltage reference for the regulation setpoint.
The output is 5 V at 1 A while the input voltage can vary from 16 V to 42 V. The switching frequency is set to 250
kHz. An auxiliary winding on transformer (T1) provides 7.5 V to power the LM5001 when the output is in
regulation. This disables the internal high voltage VCC LDO regulator and improves efficiency. The input under-
voltage threshold is 13.9 V. The converter can be shut down by driving the EN input below 1.26 V with an open-
collector or open-drain transistor. An external synchronizing frequency can be applied to the SYNC input. An
optional soft-start circuit is connected to the COMP pin input. When power is applied, the soft-start capacitor (C7)
is discharged and limits the voltage applied to the PWM comparator by the internal error amplifier. The internal
~5 kCOMP pull-up resistor charges the soft-start capacitor until regulation is achieved. The VCC pull-up
resistor (R7) continues to charge C7 so that the soft-start circuit will not affect the compensation network in
normal operation. If the output capacitance is small, the soft-start circuit can be adjusted to limit the power-on
output voltage overshoot. If the output capacitance is sufficiently large, no soft-start circuit is needed because the
LM5001 gradually charges the output capacitor by current limiting at approximately 1 A (ILIM) until regulation is
achieved.
14 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: LM5001 LM5001-Q1
LM5001
VIN
RT
EN
GND
SW
FB
COMP
VCC
VIN = 16V ± 42V VOUT = 5V
IOUT = 1A
T1
LPRI = 160 éH
8:3:2
C1
4.7 éF
VCC
VCC
C6
100éF
D1 D2
R1
60.4k
R2
6.04k R3
52.3k
LM431
R8
4.99k
C5
0.1 PF
C2
1 éFC3
1 éF
R10
2.20k
R9
2.20k
R4
249
R6
47
R7
10k
C4
1 éFR5
560
LM5001
VIN
RT
EN
GND
SW
FB
COMP
VCC
VIN = 16V ± 42V VOUT = 5V
IOUT = 1A
T1
LPRI = 160 PH
8:3:2
C1
4.7 PF
C3
1 PF
VCC
VCC
C4
100 PF
D1 D2
C5
220 pF
C6
4700 pF
R1
60.4k
R2
6.04k R3
52.3k
R4
13.0k
R5
10.2k
R6
3.40k
EN
SYNC
C2
100 pF
C7
10 PF
R7
100k
LM5001
,
LM5001-Q1
www.ti.com
SNVS484H JANUARY 2007REVISED JULY 2015
Typical Applications (continued)
Figure 18. Non-Isolated Flyback
8.2.2 Isolated Flyback
The Isolated Flyback converter (Figure 19) utilizes a 2.5 V voltage reference (LM431) located on the isolated
secondary side for the regulation setpoint. The LM5001 internal error amplifier is disabled by grounding the FB
pin. The LM431 controls the current through the opto-coupler LED, which sets the COMP pin voltage. The R4
and C3 network boosts the phase response of the opto-coupler to increase the loop bandwidth. The output is 5 V
at 1 A and the input voltage ranges from 16 V to 42 V. The switching frequency is set to 250 kHz.
Figure 19. Isolated Flyback
8.2.3 Boost
The Boost converter (Figure 20) utilizes the internal voltage reference for the regulation setpoint. The output is 48
V at 150 mA, while the input voltage can vary from 16 V to 36 V. The switching frequency is set to 250 kHz. The
internal VCC regulator provides 6.9 V bias power, since there isn’t a simple method for creating an auxiliary
voltage with the boost topology. Note that the boost topology does not provide output short-circuit protection
because the power MOSFET cannot interrupt the path between the input and the output.
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: LM5001 LM5001-Q1
LM5001
VIN
RT
EN
GND
SW
FB
COMP
VCC
VIN = 16V ± 48V VOUT = 24V
IOUT = 250 mA
C1
4.7 éF
C2
1 PF
C6
22éF
D2
C5
0.015 PF
R1
60.4k
R2
6.04k R3
52.3k
R4
11.5k
R5
11.5k
R6
634
L1
470 PH
L2
470 PH
C3
10 PF
C4
150 pF
LM5001
VIN
RT
EN
GND
SW
FB
COMP
VCC
VIN = 16V ± 36V VOUT = 48V
IOUT = 150mA
C1
4.7 éF
C2
1 éF
C3
10éF
D2
C4
2200 pF
R1
60.4k
R2
6.04k R3
52.3k
R4
73.2k
R5
54.9k
R6
1.47k
L1
100 PH
LM5001
,
LM5001-Q1
SNVS484H JANUARY 2007REVISED JULY 2015
www.ti.com
Typical Applications (continued)
Figure 20. Boost
8.2.4 24-V SEPIC
The 24-V SEPIC converter (Figure 21) utilizes the internal voltage reference for the regulation setpoint. The
output is 24 V at 250 mA while the input voltage can vary from 16 V to 48 V. The switching frequency is set to
250 kHz. The internal VCC regulator provides 6.9 V bias power for the LM5001. An auxiliary voltage can be
created by adding a winding on L2 and a diode into the VCC pin.
Figure 21. 24-V SEPIC
8.2.5 12-V Automotive SEPIC
The 12-V Automotive SEPIC converter (Figure 22) utilizes the internal bandgap voltage reference for the
regulation setpoint. The output is 12 V at 50 mA while the input voltage can vary from 3.1 V to 60 V. The output
current rating can be increased if the minimum VIN voltage requirement is increased. The switching frequency is
set to 750 kHz. The internal VCC regulator provides 6.9 V bias power for the LM5001. The output voltage can be
used as an auxiliary voltage if the nominal VIN voltage is greater than 12 V by adding a diode from the output
into the VCC pin. In this configuration, the minimum input voltage must be greater than 12 V to prevent the
internal VCC to VIN diode from conducting. If the applied VCC voltage exceeds the minimum VIN voltage, then
an external blocking diode is required between the VIN pin and the power source to block current flow from VCC
to the input supply.
16 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: LM5001 LM5001-Q1
LM5001
VIN
RT
EN
GND
SW
FB
COMP
VCC
VIN = 3.1V ± 60V VOUT = 12V
IOUT = 50 mA
C1
2.2 éF
C2
1 PF
C6
22 éF
D2
C5
0.015 PF
R1
15.8k
R2
11.5k
R3
11.5k
R4
1.33k
L1
100 PH
L2
100 PH
C3
4.7 PF
C4
150 pF
NC
LM5001
,
LM5001-Q1
www.ti.com
SNVS484H JANUARY 2007REVISED JULY 2015
Typical Applications (continued)
Figure 22. 12-V SEPIC
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Links: LM5001 LM5001-Q1
LM5001
,
LM5001-Q1
SNVS484H JANUARY 2007REVISED JULY 2015
www.ti.com
9 Layout
9.1 Layout Guidelines
The LM5001 Current Sense and PWM comparators are very fast and may respond to short duration noise
pulses. The components at the SW, COMP, EN and the RT pins should be as physically close as possible to the
IC, thereby minimizing noise pickup on the PC board tracks.
The SW output pin of the LM5001 should have a short, wide conductor to the power path inductors, transformers
and capacitors in order to minimize parasitic inductance that reduces efficiency and increases conducted and
radiated noise. Ceramic decoupling capacitors are recommended between the VIN pin to the GND pin and
between the VCC pin to the GND pin. Use short, direct connections to avoid clock jitter due to ground voltage
differentials. Small package surface mount X7R or X5R capacitors are preferred for high frequency performance
and limited variation over temperature and applied voltage.
If an application using the LM5001 produces high junction temperatures during normal operation, multiple vias
from the GND pin to a PC board ground plane helps conduct heat away from the IC. Judicious positioning of the
PC board within the end product, along with use of any available air flow helps reduce the junction temperatures.
If using forced air cooling, avoid placing the LM5001 in the airflow shadow of large components, such as input
capacitors, inductors or transformers.
18 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: LM5001 LM5001-Q1
LM5001
,
LM5001-Q1
www.ti.com
SNVS484H JANUARY 2007REVISED JULY 2015
10 Device and Documentation Support
10.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY DOCUMENTS SOFTWARE COMMUNITY
LM5001 Click here Click here Click here Click here Click here
LM5001-Q1 Click here Click here Click here Click here Click here
10.2 Trademarks
All trademarks are the property of their respective owners.
10.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
10.4 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 19
Product Folder Links: LM5001 LM5001-Q1
PACKAGE OPTION ADDENDUM
www.ti.com 29-Jul-2017
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM5001IDQ1 ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 L5001
IDQ1
LM5001IDRQ1 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 L5001
IDQ1
LM5001MA NRND SOIC D 8 95 TBD Call TI Call TI -40 to 125 L5001
MA
LM5001MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 L5001
MA
LM5001MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 L5001
MA
LM5001SD/NOPB ACTIVE WSON NGT 8 1000 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LM5001
LM5001SDE/NOPB ACTIVE WSON NGT 8 250 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LM5001
LM5001SDX/NOPB ACTIVE WSON NGT 8 4500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LM5001
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
PACKAGE OPTION ADDENDUM
www.ti.com 29-Jul-2017
Addendum-Page 2
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM5001, LM5001-Q1 :
Catalog: LM5001
Automotive: LM5001-Q1
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM5001IDRQ1 SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM5001MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM5001SD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1
LM5001SDE/NOPB WSON NGT 8 250 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1
LM5001SDX/NOPB WSON NGT 8 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Aug-2015
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM5001IDRQ1 SOIC D 8 2500 367.0 367.0 35.0
LM5001MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM5001SD/NOPB WSON NGT 8 1000 210.0 185.0 35.0
LM5001SDE/NOPB WSON NGT 8 250 210.0 185.0 35.0
LM5001SDX/NOPB WSON NGT 8 4500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Aug-2015
Pack Materials-Page 2
MECHANICAL DATA
NGT0008A
www.ti.com
SDC08A (Rev A)
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