BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
JUNE 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
●125 W at 25°C Case Temperature
●12 A Continuous Collector Current
●Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)
BDV64
BDV64A
BDV64B
BDV64C
VCBO
-60
-80
-100
-120
V
Collector-emitter voltage (IB = 0)
BDV64
BDV64A
BDV64B
BDV64C
VCEO
-60
-80
-100
-120
V
Emitter-base voltageVEBO-5V
Continuous collector current IC-12A
Peak collector current (see Note 1)ICM-15A
Continuous base current IB-0.5A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot125W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot3.5W
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL260°C
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
2
JUNE 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature(unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = -30 mAIB = 0(see Note 4)
BDV64
BDV64A
BDV64B
BDV64C
-60
-80
-100
-120
V
ICEOCollector-emitter
cut-off current
VCB= -30 V
VCB= -40 V
VCB= -50 V
VCB= -60 V
IB=0
IB=0
IB=0
IB=0
BDV64
BDV64A
BDV64B
BDV64C
-2
-2
-2
-2
mA
ICBOCollector cut-off
current
VCB= -60 V
VCB= -80 V
VCB= -100 V
VCB= -120 V
VCB= -30 V
VCB= -40 V
VCB= -50 V
VCB= -60 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
-0.4
-0.4
-0.4
-0.4
-2
-2
-2
-2
mA
IEBOEmitter cut-off
currentVEB = -5 VIC=0-5mA
hFEForward current
transfer ratioVCE = -4 VIC=-5 A(see Notes 4 and 5)1000
VCE(sat)Collector-emitter
saturation voltageIB = -20 mAIC=-5 A(see Notes 4 and 5) -2V
VBEBase-emitter
voltageVCE = -4 VIC=-5 A(see Notes 4 and 5)-2.5V
VECParallel diode
forward voltageIE = -10 AIB = 0(see Notes 4 and 5)-3.5V
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance 1 °C/W
RθJAJunction to free air thermal resistance35.7°C/W
3
JUNE 1993 - REVISED MARCH 1997
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
hFE - Typical DC Current Gain
100
1000
10000 TCS145AD
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -4 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
0
TCS145AE
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·0
-1·5
-0·5
0
TCS145AF
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
4
JUNE 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100
120
140 TIS140AA
5
JUNE 1993 - REVISED MARCH 1997
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
PRODUCT INFORMATION
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX. 16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0 3,95
4,15
1 2 3
NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
ø
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
6
JUNE 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited