BC807 ... BC808 BC807 ... BC808 IC = -800 mA VCES = -30 ...-50 V hFE ~ 160/250/400 Ptot = 310 mW Tjmax = 150C SMD General Purpose PNP Transistors SMD Universal-PNP-Transistoren Version 2019-07-08 Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) +0.1 1.1 -0.2 2.9 0.1 0.4+0.1 -0.05 1 1.30.1 2.4 0.2 2 1.9 0.1 Besonderheiten Universell anwendbar Drei Stromverstarkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1 Mechanical Data 1) Mechanische Daten 1) Taped and reeled 1=B RoHS Pb EE WE Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) 3 Type Code EL V SOT-23 (TO-236) Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) Suffix -Q: AEC-Q101 konform 1) Suffix -AQ: in AEC-Q101 Qualifizierung 1) 3000 / 7" Weight approx. 2=E 3=C Dimensions - Mae [mm] Gegurtet auf Rolle 0.01 g Gewicht ca. Case material UL 94V-0 Gehausematerial Solder & assembly conditions 260C/10s Lot- und Einbaubedingungen MSL = 1 Type Code BC807-16 = 5A or 5CR BC807-25/-Q = 5B or 5CS BC807-40/-Q/-AQ = 5C or 5CT Complementary NPN transistors Komplementare NPN-Transistoren BC808-16 = 5E or 5CR BC808-25 = 5F or 5CS BC808-40 = 5G or 5CT BC817, BC818 Maximum ratings 2) Grenzwerte 2) BC807 BC808 Collector-Emitter-voltage - Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-voltage - Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Ptot 310 mW 3) - IC 800 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A Peak Base current - Basis-Spitzenstrom - IBM 200 mA Tj TS -55...+150C -55...+150C Power dissipation - Verlustleistung Collector current - Kollektorstrom DC Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 2 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25C, unless otherwise specified - TA = 25C, wenn nicht anders angegeben Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC807 ... BC808 Characteristics Kennwerte Tj = 25C Min. Typ. Max. hFE 100 160 250 - - - 250 400 630 hFE 40 - - - VCEsat - - 0.7 V - VBEsat - - 1.3 V - VBE - - 1.2 V - ICB0 - - - - 100 nA 5 A - IEB0 - - 100 nA fT - 100 MHz - CCBO - 12 pF - 1 DC current gain - Kollektor-Basis-Stromverhaltnis ) Group -16 Group -25 Group -40 - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA 2 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) 2 - IC = 500 mA, - IB = 50 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 20 V, (E open) - VCB = 20 V, Tj = 125C, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, - IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient Warmewiderstand Sperrschicht - Umgebung RthA < 420 K/W 2) 120 100 [%] [pF] 100 f = 1 .0 M Hz 80 80 60 60 40 40 XY = EB 20 20 CXY Ptot 0 0 0 TA 50 100 150 0 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 2 XY = CB -VXY 5 10 [V] 15 Typical capacitances versus voltage Typische Kapazitaten in Abh. der Spannung Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG BC807 ... BC808 103 V CE = -1V T j = 150C Tj = 25C 10 2 Tj = -55C hF E 10 10-4 -IC 10-3 -2 10 -1 10 [A] 1 Typical DC current gain versus collector current (-16) Typisches Kollektor-Basis Stromverhaltnis in Abhangigkeit vom Kollektorstrom (-16) 103 V CE = -1V T j = 150C Tj = 25C 102 Tj = -55C hF E 10 10-4 -IC 10-3 -2 10 -1 10 [A] 1 Typical DC current gain versus collector current (-25) Typisches Kollektor-Basis Stromverhaltnis in Abhangigkeit vom Kollektorstrom (-25) 103 V CE = -1V T j = 150C Tj = 25C Tj = -55C 102 hF E 10 10-4 -IC 10-3 -2 10 -1 10 [A] 1 Typical DC current gain versus collector current (-40) Typisches Kollektor-Basis Stromverhaltnis in Abhangigkeit vom Kollektorstrom (-40) (c) Diotec Semiconductor AG http://www.diotec.com/ 3 BC807 ... BC808 100 D = 0.5 [%] D = 0.1 10 Z thA RthA D = 0.01 D -> 0 1 0.01 [ms] 0.1 1 10 10 2 [t p] Relative transient thermal impedance vs. pulse duration (typical) Relativer transienter Warmewiderstand uber Impulsdauer (typisch) 10 3 Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 4 http://www.diotec.com/ (c) Diotec Semiconductor AG