3-1
File Number 4789
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
SABER™ is a Copyright of Analogy, Inc.
RHR1K160
1A, 600V Hyperfast Diode
The RHR1K160 is a hyperfast diode with soft recovery
characteristics (trr < 25ns). It has half the recovery time of
ultrafast diodes and is silicon nitride passivated ion-
implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits reducing power loss
in the switching transistors.
Formerly developmental type TA49185.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
•Thermal Impedance SPICE Model
•Thermal Impedance SABER™ Model
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC MS-012AA
Ordering Information
PART NUMBER PACKAGE BRAND
RHR1K160 MS-012AA RHR1K160
NOTE: Whenordering, use the entire part number.Forordering in tape
and reel, add the suffix 96 to the part number, i.e . RHR1K16096.
ANODE (2)
CATHODE (8)
NC (1)
CATHODE (7)
CATHODE (6)
CATHODE (5)
ANODE (3)
NC (4)
BRANDING DASH
1234
5
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified RHR1K160 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
TA = 65oC1A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
Square Wave, 20kHz 2A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
Halfwave, 1 Phase, 60Hz 10 A
Maximum Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD2.5 W
Avalanche Energy (See Figures 11 and 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 5mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ-55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet January 2000
3-2
Electrical Specifications TA = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 1A - - 2.1 V
IF = 1A, TA = 150oC - - 1.7 V
IRVR = 600V - - 100 µA
VR = 600V, TA = 150oC - - 500 µA
trr IF = 1A, dIF/dt = 200A/µs--25ns
taIF = 1A, dIF/dt = 200A/µs - 10.5 - ns
tbIF = 1A, dIF/dt = 200A/µs-5-ns
QRR IF = 1A, dIF/dt = 200A/µs - 20 - nC
CJVR = 10V, IF = 0A - 10 - pF
RθJA Pad Area = 0.769 in2(Note 1) - - 50 oC/W
Pad Area = 0.054 in2(Note 2) (Figure 13) - - 177 oC/W
Pad Area = 0.0115 in2(Note 2) (Figure 13) - - 217 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 10), summation of ta+t
b.
ta = Time to reach peak reverse current (See Figure 10).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 10).
Qrr = Reverse recovery charge.
CJ = Junction Capacitance.
RθJA = Thermal resistance junction to ambient.
pw = Pulse width.
D = Duty cycle.
NOTES:
1. Measured using FR-4 copper board at 3.2 seconds.
2. Measured using FR-4 copper board at 1000 seconds.
RHR1K160
3-3
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,t
aAND tbCURVES vs FORWARD CURRENT
FIGURE 5. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
VF, FORWARD VOLTAGE (V)
10
0.1
1
0 0.5 1 1.5 2 2.5 4
150oC
100oC
25oC
IF, FORWARD CURRENT (A)
3.53
VR, REVERSE VOLTAGE (V)
0 600100 500200
10
0.01
0.1
1
IR, REVERSE CURRENT (µA)
25oC
100oC
150oC
0.001 300 400
IF, FORWARD CURRENT (A)
1
0
16
12
0.5
tr
tb
8
4
ta
t, RECOVERY TIMES (ns)
0.1
20 TA = 25oC, dIF/dt = 200A/ sTA = 25oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
1
0
15
25
20
0.5
trr
tb
10
5
ta
t, RECOVERY TIMES (ns)
0.1
30
35 TA = 100oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
1
0
40
20
0.5
trr
10 ta
t, RECOVERY TIMES (ns)
0.1
50
tb
30
TA = 150oC, dIF/dt = 200A/µs1.0
0.2
050 75 12525 150100
0.4
0.6
0.8
DC
TA, AMBIENT TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
SQ. WAVE
RθJA = 50oC/W
RHR1K160
3-4
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
FIGURE 8. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Test Circuits and Waveforms
FIGURE 9. trr TEST CIRCUIT FIGURE 10. trr WAVEFORMS AND DEFINITIONS
Typical Performance Curves (Continued)
20
0
40
30
10
50
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0 20 40 60 10080
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
10
1
10
-2
Z
θ
JA
, NORMALIZED
THERMAL IMPEDANCE
0.01 10
-4
10
-3
SINGLE PULSE
10
1
0.1
10
2
10
3
R
θJA
= 50
o
C/W
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
RHR1K160
3-5
Thermal Resistance vs Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM,inan
application.Therefore the application’s ambient temperature,
TA (oC), and thermal resistance RθJA (oC/W) must be
reviewed to ensure that TJM is never exceeded. Equation 1
mathematically represents the relationship and serves as
the basis for establishing the rating of the part.
In using surface mount devices such as the SO-8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of the PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 13 defines the
RθJA for the device as a function of the top copper
(component side) area. This is for a horizontally positioned
FR-4 board with 2 oz. copper after 1000 seconds of steady
state power with no air flow. This graph provides the
necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Intersil device Spice
thermal model or manually utilizing the normalized maximum
transient thermal impedance curve.
Displayed on the curve are RθJA values listed in the
Electrical Specifications table. These points were chosen to
depict the compromise between the copper board area, the
thermal resistance and ultimately the power dissipation,
PDM. Thermal resistances corresponding to other
component side copper areas can be obtained from Figure
13 or by calculation using Equation 2. The area, in square
inches is the top copper area including the cathode pad
area.
FIGURE 11. AVALANCHE ENERGY TEST CIRCUIT FIGURE 12. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
Test Circuits and Waveforms (Continued)
DUT
CURRENT
SENSE +
LR
VDD
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IV
t0t1t2
IL
VAVL
t
IL
(EQ. 1)
PDM TJM TA
–()
ZθJA
-----------------------------=
RθJA, THERMAL IMPEDANCE
50
100
150
200
CATHODE MOUNTING AREA, TOP COPPER AREA (in2)
0.1 1.0
177oC/W - 0.054in2
217oC/W - 0.0123in2
FIGURE 13. THERMAL RESISTANCE vs MOUNTING PAD
AREA
0.001
350
250
JUNCTION TO AMBIENT (oC/W)
300
0.01
RθJA = 101.6 - 25.82 x ln(AREA)
(EQ. 2)
RθJA 101.6 25.82 Area()ln×–=
RHR1K160
3-6
The transient thermal impedance (ZθJA) is also effected by
various top copper board areas. Figure 14 shows the effect
of copper pad area on the single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM4 remain constant for each of the thermal models.
A listing of the model component values is available in
Table 1.
0
50
100
150
10-1 100101102103
FIGURE 14. TRANSIENT THERMAL IMPEDANCE vs MOUNTING PAD AREA
t, RECTANGULAR PULSE DURATION (s)
ZθJA, THERMAL
IMPEDANCE (oC/W)
COPPER BOARD AREA - DESCENDING ORDER
0.049 in2
0.296 in2
0.523 in2
0.769 in2
1.000 in2
RHR1K160
3-7
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
SPICE Thermal Model
REV August 1998
RHR1K160
Copper Area = 0.769 in2
CTHERM1 th 8 5e-6
CTHERM2 8 7 2.5e-5
CTHERM3 7 6 1.2e-4
CTHERM4 6 5 4.5e-4
CTHERM5 5 4 9e-3
CTHERM6 4 3 4.5e-2
CTHERM7 3 2 3.5e-1
CTHERM8 2 tl 2
RTHERM1 th 8 4e-2
RTHERM2 8 7 1.6e-1
RTHERM3 7 6 1
RTHERM4 6 5 3.2
RTHERM5 5 4 6
RTHERM6 4 3 19
RTHERM7 3 2 25
RTHERM8 2 tl 36
SABER Thermal Model
Copper Area = 0.769 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 5e-6
ctherm.ctherm2 8 7 = 2.5e-5
ctherm.ctherm3 7 6 = 1.2e-4
ctherm.ctherm4 6 5 = 4.5e-4
ctherm.ctherm5 5 4 = 9e-3
ctherm.ctherm6 4 3 = 4.5e-2
ctherm.ctherm7 3 2 = 3.5e-1
ctherm.ctherm8 2 tl = 2
rtherm.rtherm1 th 8 = 4e-2
rtherm.rtherm2 8 7 = 1.6e-1
rtherm.rtherm3 7 6 = 1
rtherm.rtherm4 6 5 = 3.2
rtherm.rtherm5 5 4 = 6
rtherm.rtherm6 4 3 = 19
rtherm.rtherm7 3 2 = 25
rtherm.rtherm8 2 tl = 36
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
7
JUNCTION
AMBIENT
8
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
TABLE 1. THERMAL MODELS
COMPONENT 0.049 in20.296 in20.523 in20.769 in21.0 in2
CTHERM6 5e-2 4.5e-2 4.5e-2 4.5e-2 4.5e-2
CTHERM7 2.5e-1 3.5e-1 3.5e-1 3.5e-1 3.5e-1
CTHERM8 1 2 2 2 2
RTHERM5 5 6 6 6 7
RTHERM6 22 19 19 19 19
RTHERM7 60 32 25 25 23
RTHERM8 55 49 42 36 28
RHR1K160
3-8
RHR1K160
MS-012AA
8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE
MS-012AA
12mm TAPE AND REEL
AA1
E
E1
e
b
D
L
h x 45o
2
0o-8o
c
0.004 IN
0.10 mm
56
0.155
4.0
0.275
7.0
0.050
1.27
0.024
0.6
0.060
1.52
MINIMUM RECOMMENDED FOOTPRINT FOR
SURFACE-MOUNTED APPLICATIONS
1
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.0532 0.0688 1.35 1.75 -
A10.004 0.0098 0.10 0.25 -
b 0.013 0.020 0.33 0.51 -
c 0.0075 0.0098 0.19 0.25 -
D 0.189 0.1968 4.80 5.00 2
E 0.2284 0.244 5.80 6.20 -
E10.1497 0.1574 3.80 4.00 3
e 0.050 BSC 1.27 BSC -
H 0.0099 0.0196 0.25 0.50 -
L 0.016 0.050 0.40 1.27 4
NOTES:
1. All dimensions are within allowable dimensions of Rev. C of
JEDEC MS-012AA outline dated 5-90.
2. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusions or gate burrs shall not exceed
0.006 inches (0.15mm) per side.
3. Dimension “E1” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 0.010 inches
(0.25mm) per side.
4. “L” is the length of terminal for soldering.
5. Thechamferonthe bodyisoptional.Ifitisnotpresent,avisualindex
feature m ust be located within the crosshatched area.
6. Controlling dimension: Millimeter.
7. Revision 8 dated 5-99.
USER DIRECTION OF FEED
L
C
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
8.0mm
12mm
COVER TAPE
330mm 50mm
13mm
18.4mm
12.4mm
GENERAL INFORMATION
1. 2500 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION “A” SPECIFICATIONS.
ACCESS HOLE
40mm MIN.