General Purpose Transistor
NPN Silicon
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Symbol
VCEO
Value
65
45
30
Unit
Rating
1
2
3
BASE
COLLECTOR
EMITTER
BC846
BC846
BC846
IC
VCBO
VEBO
80
50
30
6.0
6.0
5.0
mAdc
Vdc
Vdc
Vdc
Collector Current-Continuous 100
1.FR-5=1.0 x 0.75 x 0.062 in.
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;
BC848B;=1K; BC848C=1L;
Device Marking
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
M aximum R atings ( TA=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
Symbol Max Unit
mW
mW/ C
C/W
C
Thermal Characteristics
(Note 1.) q
BC847
BC847
BC847
BC848
BC848
BC848
150
2.4
833
-55 to +150
SOT-323(SC-70)
1
2
3
WEITRON
http://www.weitron.com.tw
WE IT R ON
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
Noise Figure
(IC= 0.2mA, VCE= 5.0Vdc,
Rs=2.0 k ,
f=1.0 kHz, BW=200Hz)
fT
Cobo
NF
MHz
pF
BC846A,B, BC847A,B,C, BC848A,B,C,
100
- -
- -
-
-
-
-
4.5
10
dB
Ω
V
V
V
DC Current Gain
(IC= 10uA, VCE=5.0V)
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V)
(IC= 10mA, VCE=5.0V)
hFE
VCE(sat)
VBE(sat)
VBE(on)
On Characteristics
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C,
-
-
-
110
200
420
-
-
-
-
-
-
660
-
-
-
580
-
90
150
270
-0.7
-0.9
-
-
-
220
450
800
0.25
0.6
700
770
-
(IC= 2.0mA, VCE=5.0V) 180
290
520
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
Collector-Emitter Breakdown Voltage
(IC= 10mA)
Collector-Emitter Breakdown Voltage
(IC=10 uA ,VEB=0)
Collector-Base Breakdown Voltage
(IC=10 uA)
Emitter-Base Breakdown Voltage
(IE=1.0 uA)
Collector Cutoff Current (VCB=30V)
(VCB=30V, TA=150 C)
V(BR)CEO
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO nA
mA
BC846A Series
BC847A Series
BC848A Series
BC846A Series
BC847A Series
BC848A Series
BC846A Series
BC847A Series
BC848A Series
BC846A Series
BC847A Series
BC848A Series
V
V
V
V
Characteristics Symbol Min Max Unit
Off Characteristics
Typ
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
5.0
Electrical Characteristics (TA=25 C Unless Otherwise noted)
WEITRON
WE IT R ON
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
http://www.weitron.com.tw
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
C,CAPACITANCE (pF)
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
10
7.0
5.0
3.0
2.0
1.0
Cib
TA=25 C
Cob
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
100
80
60
40
20
30
VCE=10V
TA= 25 C
Figure1.Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
hFE,NORMALIZED DC CURRENT GAIN
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
VCE=10V
TA=25 C
Firure2. "Saturation" And "On" Voltage
IC, COLLECTOR CURRENT (mAdc)
V, VOLTAGE (VOLTS)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TA=25 C
VBE(sat)@IC/BC=10
VBE(ON)@VCE= 10V
VCE(sat)@IC/BC=10
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
TA=25 C
IC= 200mA
IC=-50mA
IC= 20mA
IC=
10mA
IC= 100mA
0.02 0.1 1.0 10 20
2.0
1.6
1.2
0.8
0.4
0
qVB, TEMPERATURE COEFFICIENT (mV/ C)
-55 C to +125 C
1.0
1.2
1.6
2.0
2.4
2.8
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
BC847 & BC848 Series
WEITRON
WE IT R ON
BC846AW/BW/CW
BC847AW/BW/CW
BC878AW/BW/CW
http://www.weitron.com.tw
IC=
10mA
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
0.4
0
2.0
1.6
1.2
0.8
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20mA 50mA 100mA 200mA
TA=25 C
0.2 0.5 1.0 -2.0 5.0 10 20 50 100 200
1.0
1.4
1.8
2.2
2.6
3.3
Figure 10. Base-Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
qVB TEMPERATURE COEFFICIENT (mV/ C)
qVB for VBE
-55 C to 125 C
0.1 0.2 0.5 1.0 2.0 5.0 10 50 10020
20
10
40
8.0
6.0
4.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
C. CAPACTIANCE (pF)
TA=25 C
Cib
Cob
Figure 11. Capacitance
1.0 10 100
Figure 12.Current-Gain-Bandwidth Product
IC, COLLECTOR CURRENT (mA)
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
500
200
100
50
20
VCE=5.0V
TA=25 C
5.0
50
0.1 0.2 1.0 10 100
2.0
1.0
0.5
0.2
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORAMALIZED)
Figure 7.DC Current Gain
VCE=5V
TA=25 C
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT(mA)
Figure 8. "ON" Voltage
V,Voltage (Volts)
1.0
0.8
0.6
0.4
0.2
0
TA=25 C
VBE(sat)@IC/IB=10
VCE(sat)@IC/IB=10
VBE@VCE=-5.0V
BC846 Series
