2SK794 - Toshiba - Datasheet.Support

Power MOSFETs

PRODUCT GUIDE

2004-3

semiconductor

2004

http://www.semicon.toshiba.co.jp/eng

CONTENTS

1Features and Structure ..........................................................4

2New Power MOSFET Products .............................................5

3Selection Guide ................................................................6 - 9

4Power MOSFET Characteristics

1. SOP Series...............................................................10 - 15

2. VS Series..................................................................16 - 17

3. TFP Series...............................................................18 - 21

4. TO-220SIS π-MOSIV/VI Series

..................................

22 - 23

5. L

-π-MOSV

......................................................................

24 - 25

6. 2.5-V Drive π-MOSV

..............................................................

7. U-MOSIII Series (Trench Type).......................................26

8. π-MOSVII Series .............................................................27

9. π-MOSV Series (V

DSS

= 150 to 250 V)............................28

10. π-MOSV Series (V

DSS

= 400 to 700 V)...........................29

11.

High-Speed

π-MOSV Series (V

DSS

= 450 to 600 V).........30

12. π-MOSIII /IV Series (V

DSS

= 800 to 1000 V)....................31

5Power MOSFET Modules ....................................................32

6Product List...................................................................33 - 36

7Superseded Products ...................................................37 - 38

Final-Phase and Discontinued Products

.............................38 - 39

9Package List .................................................................40 - 47

Features and Structure

Power MOSFETs

All power MOSFETs have the following features:

1) No carrier storage effect

Superior frequency and switching characteristics

2) Rugged without current concentration

3) Low drive power due to voltage-controlling device

4) Easy parallel connection

● π-MOS

Toshiba Power MOSFETs use the double-diffusion MOS (D-MOS)

structure, which produces a high-withstand voltage, to form channels.

This structure is especially well suited to high-withstad voltage and

high-current devices.

A high level of integration yields a high-performance power MOSFET

with low On-resistance and low power loss.

● U-MOS

Higher channel density is achieved by connecting channel vertically

as having a U-groove at the gate region and this structure reduces

On-resistance to lower than other MOSFET structures. This is an

ideal for low-voltage power MOSFETs.

Gate

Double-Diffusion Structure

Source

Gate

Trench Structure

Drain

Source

■ Toshiba Power MOSFETs have the following

additional features:

■ Structure of Toshiba Power MOSFETs

Drain

Gate

Source

Protection

zener diode

1) Guaranteed avalanche withstand capability No absorber circuit required

2) Improved the function of built-in diodes greatly expands the possibility of circuit design

3) High ruggedness enables to take better margin for circuit design

4) High-speed switching contributes to equipment's high-speed operation

5) Low R

(DS)ON

reduces power consumption of equipment

6) Downsized packages enable equipment's size to be compact and thin

7) Low drive loss reduces power consumption of equipment

8) Zener diode between gate and source

Improved electrostatic withstand between gate and source

➾

New Power MOSFET Products

● DC-DC converters

● PDP drivers

● Motor drivers

Applica-

tions

TFP (Thin Flat Package) Series is comprised of new high-

performance devices with a 4-pin structure for separating input and

output. TFP Series devices have the same ratings as existing

TO-220SM package devices; however, the volume of them occupies

only 42% of the volume of TO-220SM package devices.

● DC-DC converters

● Motor drives

● Solenoids and lamp drives

Applica-

tions

High-integration is achieved using trench structure technique. Low-

voltage driving (V

= 4 V) is possible because of ultra-low On-

resistance.

● Monitors

● DC-DC converters

● PDP drives

Applica-

tions

The π-MOS Series is comprised of low-cost devices which are ideal

for use in monitors, especially for frequency control and S-shape

correction.

● Inverters

● Motor drives

● AC adapters

Applica-

tions

π-MOS V High-Speed Series is new product series and achieves

faster switching speed than π-MOS V Series which are currently

well-established in the marketplace.

Two types of series are available:

High-Speed Switching Series

High-Speed Diode Series

● Switching power supplies

● AC adapters

● Lighting inverters

Applica-

tions

This Series is comprised of highly integrated, high-performance,

high-breakdown-voltage and low-cost products with V

DSS

in the

range 400 V to 600 V which are ideal for use in 100-V AC input-

switching power supplies.

● Switching power supplies

Applica-

tions

This Series is comprised of highly integrated, high-performance,

high-breakdown-voltage and low-cost products with V

DSS

in the

range 800 V to 900 V which are ideal for use in 200-V AC input-

switching power supplies.

VS Series and PS Series products are very compact and thin, and

suitable for various items of portable electronic devices.

● Portable phones

● Notebook PCs

● Portable electronic devises

Applica-

tions

Applica-

tions

Applica-

tions

New Power MOSFET Products

All products have a protection zener diode between gate and source.

Avalanche withstand capability in single and series Power MOSFET products

SOP Series VDSS = 20 V to 60 V

VS and PS Series

VDSS = 12 to 30 V

TFP (Thin Flat Package)

Series

This series downsized 2.8-mm package height compared to the

conventional package, TO220NIS. In addition, the chip design

optimization, π-MOS IV / VI Series housed in this new package,

reduced Qg characteristics.

● DC-DC converters ● AC adapters

● Motor drives

● Switching power supplies

TO-220SIS Series V

DSS

= 450 to 900 V

U-MOS

III

Series V

DSS

= 40 V to 100 V

With employing submicron technology and reducing gate charge,

this latest series realized extremely fast speed and low R

DS(ON)

● Digital amps

● DC-DC converters

● Motor drivers

π-MOS

VII

Series VDSS = 100 V

π-MOS

Series V

DSS

= 400 V to 600 V

π-MOS

III

Series V

DSS

= 800 V to 900 V

π-MOS

Series V

DSS

= 150 V to 250 V

π-MOS

High-Speed Series V

DSS

= 250 V to 600 V

SOP Series products are compact and thin, and require only a small

mounting area. They are suitable for lithium-ion secondary battery

protection circuits and for notebook PCs.

● Lithium-ion secondary battery protection circuits

● Notebook PCs

● Portable electronic devices

Applica-

tions

Selection Guide

2SK3473(1.6)

➇

P TPC8104-H

(0.065)

➅

NS#

TPCF8A01(0.049)

➅

TPCF8201(0.049)

➅

TPCS8209(0.05)

➅

N TPCF8001(0.032)

➅

P✽

TPCF8301

(0.11)

➅

DSS

(V)

(A)

16 20 30 40

# 2SK2549(0.29)

➁

# 2SJ465(0.71)

➁

# 2SK2493(0.1)

➁

# 2SJ439(0.2)

➁

TPC6004

(0.024)

➅

2SJ511(0.45)

➃

2SK2964(0.18)

➃

TPC8403

(0.055)

➅

P TPC8303(0.035)

➅

TPC8401

(0.035)

➅

TPC8402

(0.035)

➅

TPC8208(0.05)

➅

TPCS8209(0.03)

➅

TPCS8205

(0.045)

➅

TPCS8210

(0.03)

➅

P# TPC8305(0.03)

➅

P TPCS8302

(0.035)

➅

TPC8203(0.021)

➅

50 60 100 150 180 200 250 400 450 500 600 700 800 900 1000

2SK2615(0.3)

➃

2SK2961(0.3)

➃

2SK3658(0.3)

➃

2SJ315(0.25)

2SJ377(0.19)

➃

2SJ378(0.19)

➃

2SJ438(0.19)

➃

2SK2229(0.16)

➃

2SK2231(0.16)

➃

2SK2741(0.16)

➃

2SK3543(2.45)

➁

2SK2201(0.35)

➃

2SK2200(0.35)

➃

2SK2742(0.35)

➃

2SJ338(5.0)

2SK2162(5.0)

2SJ313(5.0)

2SK2013(5.0)

TPC8207(0.02)

➅

TPCS8211(0.024)

➅

TPCS8204(0.017)

➅

TPCS8102(0.02)

➅

P# TPCS8102

(0.02)

➅

2SJ567(2.0)

➁

TPCS8212

(0.024)

➅

P# TPC6101(0.06)

➅

TPC6001(0.03)

➅

✽

TPC6103(0.035)

➅

✽

TPC6104(0.04)

➅

N TPC6002(0.03)

➅

TPC8006-H(0.027)

➅

N TPC6003(0.024)

➅

N TPC6201(0.095)

➅

CN♠TPCP8402(0.077)➅

P TPC6102(0.06)

➅

TPCS8208

(0.017)

➅

2SJ610(2.55)

➁

TPCS8004-H(0.8)

➅

TPC8012-H(0.4)

➅

1.3

1.5

1.8

2.5

2.3

2.7

3.5

3.4

3.2

4.5

5.5

6.5

7.5

8.5

4.2

0.5

DSS

(V)

(A)

1.3

1.5

1.8

2.5

2.7

2.3

3.5

3.4

3.2

4.5

5.5

6.5

7.5

8.5

4.2

0.5

2SK3302(18)

➁

2SK2998(20)

2SK3471(18)

➁

2SK2845(9)

➀

2SK2733(9.0)

➀

2SK3301(20)

➀

2SK2718(6.4)

➀

2SK2700(4.3)

➀

2SK2608(4.3)

➀

2SK2719(4.3)

➀

2SK3762(6.4)

➇

2SK3763(4.3)

➇

2SK3760(2.2)

➂

2SK3758(1.5)

➂

2SK3761(1.25)

➂

2SK3759(0.85)

➂

2SK2883(3.6)

➀

2SK2603(3.6)

➀

2SK3371(9)

➁

2SK2836(9)

➁

2SK3374(4.6)

➁

2SK3472(4.6)

➁

2SK3498(5.5)

➁

2SK2992(3.5)

➁

2SK2963(0.7)

➃

2SJ508(1.9)

➃

2SK2962(0.7)

➃

2SJ509(1.9)

➃

2SK3670(1.7)

2SJ360(0.73)

➃

2SJ507(0.7)

➃

2SK2989(0.15)

➃

2SJ668(0.17) 2SK2399(0.23)

➃

2SK2400(0.23)

➃

2SK3205(0.52) 2SJ407(1.0)

➁

2SK2381(0.8)

➁

2SK2835(0.8)

➁

2SK2920(0.8)

➁

2SJ537(0.19)

➃

2SK3462(1.7)

➁

2SK3342(1.0)

➅

2SK2599(3.2)

➁

2SK3373(3.2)

➁

2SK2862(3.2)

2SK2846(5.0)

➁

2SK3067(5.0)

➁

2SK2865(5.0)

➁

2SK2750(2.2)

➁

2SK3085(2.2)

➁

2SJ512(1.25)

➁

2SJ516(0.8)

➁

2SK2417(0.5)

➁

2SK2662(1.5)

➁

2SK2661(1.5)

➁

2SK2991(1.5)

➁

2SK3466(1.5)

➁

2SK2274(1.7)

2SK1930(3.8)

2SK1119(3.8)

TPC8302(0.12)

➄

♠

TPCP8402(0.072)

➅

TPCF8402(0.077)

➅

PS✽

TPCF8B01(0.11)

➅

TPC6105

(0.11)

➅

PD✽

♠

TPC8401(0.038)

➅

♠

TPCP8J01(0.035)(-32V)➅

N TPC8211

(0.036)

➅

TPC8303

(0.021)

➅

CN TPC8401(0.021)➅

CN TPC8403(0.033)➅

TPC8A01(0.018)

➄

N TPC8210(0.015)

➅

N TPC8206(0.05)

➅

N TPC8206(0.05)

➅

TPC8105-H(0.04)

➅

TPC8001(0.02)

➄

TPC8110(0.025)

➅

P TPCS8101(0.025)

➅

NS★TPC8A01(0.025)➅

CN TPC8402(0.05)

➄

TPC8004(0.05)

➄

2SJ525(0.12)

2SK2679(1.2)

➁

2SK2838(1.2)

➁

2SK2604(2.2)

➀

2SK2605(2.2)

➀

2SK2884(2.2)

➀

2SK2610(2.5)

➀

2SK2717(2.5)

➀

2SK1359(3.8)

2SK3565(2.5)

➇

2SK2542(0.85)

➁

2SK2543(0.85)

➁

2SK2776(0.85)

2SK3538(0.85)

➁

2SK3626(0.85)

➁

2SK2952(0.55)

➁

2SK2350(0.4)

➁

2SK2914(0.5)

➁

2SK2917(0.5)

➁

2SK2544(1.25)

➁

2SK2545(1.25)

➁

2SK2602(1.25)

➁

2SK2777(1.25)

➁

2SK2746(1.7)

➀

2SK3633(1.7)

➀

2SK2749(2.0)

➀

2SK3700(2.5)

2SK1120(1.8)

2SK2613(1.7)

➁

2SK1365(1.8)

2SK2847(1.4)

➀

2SK3017(1.25)

➀

2SK2606(1.2)

➀

2SK2611(1.4)

➀

2SK2607(1.2)

➀

2SK2467(0.83)

2SJ440(0.83)

TPCF8302(0.059)

➅

P✽

TPCF8303(0.058)

➅

TPCF8402(0.05)

➅

P✽

TPCF8103(0.11)

➅

P✽ TPCF8101(0.028)

➅

✽

TPCF8102

(0.030)

➅

P TPCF8104

(0.028)

➅

N TPCF8001

(0.023)

➅

TPC8301(0.12)

➄

2SK3130(1.55)

➁

2SK3316(1.8)

➁

2SK3417(1.8)

➁

N# TPC6005(0.028)➅

2SK3627(1.5)

➁

2SK3563(1.5)

2SK3562(1.25)

2SK3667(1.0)

➂

2SK3561(0.85)

➂

2SK3564(4.3)

➀

2SK3567(2.2)

➂

2SK3566(4.3)

➇

2SK3798(3.5)

➇

2SK3757(2.45)

➂

2SK3767(5.0)

➂

N♠TPCP8201(0.05)

POWER-MINI SP TO-92MOD POWER-MOLD DP

TO-220AB

TO-220(NIS)

TO-220FL/SM

Package

code

New product

series code

TO-3P(SM)TSSOP-8

SOP-8 Lead clamp

TFP Slim-TFP

SOP-8

TO-3P(N)ISTO-3P(N) TO-3P(L)

TPS

VS-8 VS-6

♠

PS-8

➀

: π-MOSIII

➁

: π-MOSV

➂

: π-MOSVI

➃

: L2-π-MOSV

P = P-ch

CN = Complementary N-ch

CP = Complementary P-ch

NS = N-ch + SBD

PS = P-ch + SBD

[ ] = Under development

PD = P-ch + Driver

(load switch)

Notes:

( ) = R

DS(ON)

max

$ = 10-V drive

# = 2.5-V drive

✽= 1.8-V drive

= High-speed diode

N = N-ch

➄

: L2-π-MOSVI

➅

: U-MOS

➆

: π-MOSVII

➇

: π-MOSIV

TO-220SIS SOP Advance

Selection Guide

3020 50 60 100 150 180 200 250 300 450400 500 600 700 900 1000

DSS

(V)

(A)

DSS

(V)

(A)

2SJ380(0.21)

➃

2SK2382(0.18)

➁

2SK2401(0.18)

➁

2SJ201(0.625)

2SK1530(0.625)

2SK2967(0.068)

➁

2SK2995(0.068)

➁

2SK2508(0.25)

➁

2SK2598(0.25)

➁

2SK2993(0.105)

➁

2SK3388(0.105)

➁

2SK3445(0.105)

➁

2SK3544(0.4)

➁

2SK3444(0.082)

➁

2SK3176(0.052)

➁

2SK3443(0.055)

➁

2SK2882(0.12)

➁

2SK3387(0.12)

➃

2SK2789(0.085)

➃

2SK2314(0.085)

➃

2SK3084(0.046)

➅

2SK2466(0.046)

➅

2SK3442(0.020)

➅

2SK1382(0.020)

2SK1381(0.032)

2SJ412(0.21)

➃

2SJ619(0.21)

➃

2SJ464(0.09)

➃

2SK2391(0.085)

➃

2SJ620(0.09)

➃

2SK2507(0.046)

➃

2SK3089(0.03)

➁

2SK3090(0.02)

➄

2SK3127(0.011)

➄

$ 2SK3506(0.02) 2SK2886(0.02)

➃

2SK2312(0.017)

➃

2SK2985(0.0058)

➅

2SK2232(0.046)

➃

2SK2311(0.046)

➃

2SJ334(0.038)

➃

2SK3236(0.02)

2SK2385(0.03)

➃

2SK3662(0.0125)

➅

2SJ402(0.038)

➃

2SK2844(0.022)

➃

2SK3125(0.007)

➄

2SK3128(0.011)

➄

2SK3397(0.006)

$ 2SK3389(0.005)

➅

2SK3439(0.005)

➅

$ 2SK2551(0.011)

➃

2SK2745(0.0095)

➃

2SK3129(0.007)

➂

$ 2SK2550(0.03)

➃

$ 2SK2744(0.02)

➃

2SK2233(0.03)

➃

2SK2266(0.03)

➃

2SK2376(0.017)

➃

$ 2SK2398(0.03)

➃

$ 2SK3440(0.008)

➃

$ 2SK2445(0.018)2

2SK2173(0.017)

➃

2SK3441(0.0058)

➅

2SK2987(0.0058)

➅

2SK2313(0.011)

➃

2SK2267(0.011)

➃

2SK2986(0.0058)

➅

$ 2SK3051(0.03)

➃

N[ TPC8015-H(0.008)]

➅

P TPC8107(0.007)

➅

P TPC8114(0.0045)

➅

N TPC8003(0.007)

➅

N TPC8009-H(0.01)

➅

P TPC8112(0.006)

➅

N TPC8013-H(0.0065)

➅

N TPC8016-H(0.0055)

➅

N TPC8017-H(0.0066)

➅

N TPC8018-H(0.0046)

➅

2SJ304(0.12)

2SJ312(0.12)

2SJ349(0.045)

➃

2SJ401(0.045)

➃

2SK2782(0.055)

➃

2SK2614(0.046)

➃

2SK1486(0.095)

2SK1544(0.2)

2SK3132(0.09)

➁

2SK3403(0.4)

➁

2SK2916(0.4)

➁

2SK2917(0.27)

➁

2SK3117(0.27)

➁

2SK2842(0.52)

➁

2SK3068(0.52)

➁

2SK3743(0.4)

➁

2SK3398(0.52)

➁

2SK2698(0.4)2

2SK2837(0.27)

➁

2SK2953(0.4)

➁

2SK2699(0.65)

➁

2SK2915(0.4)

➁

2SK1489(1.0)

2SK3131(0.11)

➁

2SK3314(0.48)

➁

2SK3313(0.62)

➁

2SK3625(0.082)

➁

2SK3625(0.082)

➁

N TPCA8003-H(0.0066)

➅

N TPCA8004-H(0.0046)

➅

P TPCA8101-H(0.007)

➅

P TPCA8102-H(0.006)

➅

P TPCA8103(0.0042)

➅

2SK3568(0.52)

➁

2SK2965(0.26)

➁

TPC8014(0.014)

➅

TPC8108(0.013)

➅

TPC8010-H(0.016)

➅

TPC8113(0.01)

➅

2SK3669(0.125)

➆

2SK2839(0.04)

➃

2SK2843(0.75)

➁

2SK2866(0.75)

➁

2SK2889(0.75)

➁

2SK2996(1)

➁

2SK3438(1.0)

➁

2SK3437(1.0)

➁

2SK3399(0.75)

➁

2SK3265(1.0)

➇

P TPC8109(0.02)

➅

P TPC8115(0.01)

➅

2SK3453(1.0)

➇

2SK2841(0.55)

➁

2SK2949(0.55)

➁

2SK3499(0.55)

➁

2SJ200(0.83)

2SJ440(0.83)

2SK1529(0.83)

2SK3497(0.15)

2SJ618(0.37)

2SK3126(0.65)

➁

2SK3309(0.65)

➁

2SK3310(0.65)

➁

2SK3407(0.65)

➁

2SK2968(1.25)

➀

2SK2601(1.0)

➁

2SK3569(0.75)

10 10

POWER-MINI

SP TO-92MOD POWER-MOLD DP

TO-220AB

TO-220(NIS)

TO-220FL/SM

Package

code

New product

series code

TO-3P(SM)TSSOP-8

SOP-8 Lead clamp

TFP Slim-TFP

SOP-8

TO-3P(N)ISTO-3P(N) TO-3P(L)

TPS

VS-8 VS-6

♠

PS-8

➀

: π-MOSIII

➁

: π-MOSV

➂

: π-MOSVI

➃

: L2-π-MOSV

P = P-ch

CN = Complementary N-ch

CP = Complementary P-ch

NS = N-ch + SBD

PS = P-ch + SBD

[ ] = Under development

PD = P-ch + Driver

(load switch)

Notes:

( ) = R

DS(ON)

max

$ = 10-V drive

# = 2.5-V drive

✽= 1.8-V drive

= High-speed diode

N = N-ch

➄

: L2-π-MOSVI

➅

: U-MOS

➆

: π-MOSVII

➇

: π-MOSIV

TO-220SIS SOP Advance

Power MOSFET Characteristics

200

150

100

01999 2002 2003

High-speed U-MOS

III

Ultra High-speed U-MOS

III

Improved characteristics

by using Al straps

DS(ON)

• Q

(mΩ • nC)

Circuit example for DC-DC Converter

■ Synchronous rectifier (low side)

High-speed, trench and N-channel MOSFET

(N-channel high-speed or ultra high-speed U-MOS

III

Series)

MOSBD

IN OUT

1.Features of SOP Series

Improved trade-off between On-resistance and gate switch charge due to short-channel structure, trench contact

structure and Al straps.

■ Power management

Low On-resistance, trench and P-channel MOSFET

(low On-resistance U-MOS

Series)

■ Switching (high side)

High-speed, trench and N-channel MOSFET

(N-channel high-speed or ultra high-speed U-MOS

III

Series)

Al straps

Source Gate

Drain

●RDS(ON) reduction

●Reduction of package inductance

Chip development

SOP-8 SOP AdvanceStrap structure

Package development

High-speed U-MOS

III

Ultra high-speed U-MOS

III

MOSBD (MOSFET with SBD)

Development Process of High-Speed U-MOS Series

TPC8020-H 9.5 6.9

TPC8017-H 7.3 7.8

TPC8018-H 5.0 12.0

TPC8009-H 11.0 9.1

TPC8013-H 6.6 15.6

DS(ON)

(mΩ)

= 4.5 V

(nC)

= 24 V

Control IC

OUT

/ I

OUT

SBD

[Test conditions]

f = 300 kHz

= 17.6 V

OUT

= 1.6 V

43% RDS(ON) X Qsw reduction

(compared to high-speed U-MOS

III

)

■ Characteristics

•

Low gate switch charge: 14% reduction compared

to high-speed U-MOS

III

•

Low On-resistance (Al straps): 34% reduction

compared to high-speed U-MOS

III

• Housed in SOP Advance, high current, thin

and excellent heat dissipated package

Ultra High-Speed U-MOS

III

Series

Ultra High-Speed

U-MOS

III

High-Speed

U-MOS

III

DS(ON)

: V

= 4.5 V typ.

Qsw: V

= 24 V typ.

Cgd/Cgs: V

= 10 V typ.

■ Electrical Characteristics Comparison

NEW

Performance Index:

improved 43%

Control shoot-

through current

■ DC-DC Converter Efficiency Comparison

•

Ultra High-Speed U-MOS

III

vs. Conventional Products

•

Comparison when ultra high-speed MOS

III

Used in Combination

High-Speed U-MOS

III

Ultra High-Speed U-MOS

III

TPC8009-H TPC8017-H

DS(ON)

(mΩ)11

7.3

Qsw(nC) 9.1

7.8

Cgd(pF) 250

175

Cgs(pF) 1210

1290

DS(ON)

XQsw(mΩ•nC)

100.1

56.9

Capacitance ratio (Cgd / Cgs)

20.7%

13.6%

@ f = 300 kHz, V

= 17.6 V, V

out

= 1.6 V

@ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V

92%

90%

78%

Efficiency (%)Efficiency (%)

80%

82%

84%

86%

88%

246

Output Current Iout (A)

8 10121416

Efficiency

improved

Solid line: Ultra High-Speed U-MOS

III

Dotted line: High-Speed U-MOS

III

(conventional products)

TPC8020-H+TPC8020-H

TPC8009-H+TPC8009-H

TPC8009-H+TPC8013-H

TPC8020-H+TPC8018-H

81%

82%

83%

84%

85%

86%

87%

88%

89%

90%

91%

0246810121416

Solid line: the best combination

1. Low current(Iout ≤10 A)

TPC8020-H + TPC8020-H

2. High current(Iout >10 A)

TPC8020-H + TPC8018-H

TPC8020-H+TPC8020-H

TPC8017-H+TPC8018-H

TPC8020-H+TPC8017-H

TPC8017-H+TPC8017-H

TPC8020-H+TPC8018-H

Power MOSFET Characteristics

MOSBD (MOSFET with SBD)

■ Product Line-up

NEW

High side

Low side

Q2 SBD

Conventional Circuit

High side (Q1)

Low side (Q2)

MOSBD Built-in SBD

SOP-8 SOP-8

SFLAT

SOP-8

■ Characteristics

■ Applications

• Compact size

Integrated three devices ( two MOSFETs and one SBD) into a single package

• High-performance device

High side: high-speed MOSFET (high-speed U-MOS

III

)

Low side: MOSBD (U-MOS

III

MOSFET with a SBD)

• Portable devices: DC-DC converters for notebook PCs

DSS

(V) ID(A)

(ON) ma x (mΩ)

Ciss typ.

(pF)

Qg typ.

(nC)

10V 4.5V

TPC8A01

30 6 25 30 17 940 High-speed

U-MOS

III

N-ch/

N-ch+SBD

30 8.5/1 18 21 49 2295 U-MOS

III

Remark

Part Number Maximum ratings Circuit

Configuration

SOP Advance

■ Product Line-up

• Portable devices: DC-DC converters for notebook PCs

■ Applications

NEW

1,2,3: Source

4: Gate

5,6,7,8: Drain

1.27

0.05 M A

0.05 S

0.4 ± 0.1

0.15 ± 0.05

5.0 ± 0.2

0.595

0.5 ± 0.1

6.0 ± 0.3

0.95 ± 0.05

0.166 ± 0.05

1.1 ± 0.23.5 ± 0.2

5.0 ± 0.2

0.8 ± 0.1

4.25 ± 0.2

0.6 ± 0.1

Note 1: When mounted on a glass epoxy board (25.4 mm X25.4 mm x1.6 mm) Note 2: without chip resistance

SOP-8 SOP Advance Features of SOP Advance

PCB area (mm

)30

The same PCB area as SOP-8

Total height (max) (mm) 1.9

1.0

Low profile, t = 0.9 mm

rth(ch-a) (t = 10s)

(Note 1)

(°C / W) 65.8

44.6

High-power dissipation

rth(ch-c) (°C / W) –

2.78

Current rating (A) 18

High-current guarantee

Package resistance

(Note 2)

(mΩ) 1.6

0.5

Al straps

■ Characteristics

• Mounting area is identical with that of SOP-8.

• On-resistance reduction and thin package (1.0 mm max)

employing flat leads and Al straps

• Achieved high current and high power dissipation by attaching an

exposed heat sink on the bottom of the package

(ID(DC) = 40 A, PD = 45 W)

DSS

(V) I

(A) 10V 4.5V 4.0V Ultra high-speed

U-MOS

III

Ultra high-speed

U-MOS

III

Ultra high-speed

U-MOS

III

TPCA8005-H

TPCA8003-H

TPCA8004-H

TPCA8102

TPCA8103

30 27 913—24 1395

30 35 6.6 9.5 —25 1465

30 40 4.6 6.2 —37 2265

–30 –40 6 —14 109 4600 U-MOS

III

–30 –40 4.2 —6.8 184 7880 U-MOS

N-ch

Single

P-ch

Single

Part Number Maximum Ratings Circuit

Configu-

ration

(ON) max(mΩ)Q

g typ.

(nC) C

iss

typ.

(pF) Remark

★

★: Under development

Power MOSFET Characteristics

SOP-8 Series Line-up .... [Part Number: TPC8xxx]

■ Features

• Low On-resistance and high-speed switching series are lined up.

Low On-resistance Series: U-MOS

III

High-speed switching series: high-speed U-MOS

III

, ultra high-speed U-MOS

III

• On-resistance reduction employing Al straps

■ Product Line-up

10V 4.5V 4V 2.5V

TPC8004

30 5 50 —80 —16 475

TPC8001

30 7 20 —30 —40 1250

TPC8006-H

30 7 27 —40 —16 790

23 1395 High-speed

U-MOS

TPC8020-H ✽★

30 13 9 13 ——

Ultra high-speed

U-MOS

III

High-speed U-MOS

III

High-speed U-MOS

III

TPC8014

30 11 14 22 —— 39 1860 U-MOS

III

TPC8010-H

30 11 16 25 —— 18 1020

TPC8003

30 13 7 —13 —90 4380 U-MOS

TPC8015-H ✽

30 13 8 12 —— 29 1460

TPC8017-H ✽

30 15 6.6 9.5 —— 25 1465

Ultra high-speed

U-MOS

III

Ultra high-speed

U-MOS

III

High-speed U-MOS

III

TPC8016-H ✽

30 15 5.7 7.5 —— 46 2380

TPC8018-H ✽

30 18 4.6 6.2 —— 38 2265

TPC8012-H

200 1.8 400 ——— 11 440

TPC8208

20 5 ——50 70 9.5 780 U-MOS

III

TPC8207

20 6 ——20 30 22 2010 U-MOS

III

TPC8209

30 5 40 —60 —15 600 U-MOS

TPC8211

30 5.5 36 44 —— 25 1250 U-MOS

III

TPC8203

30 6 21 —32 —40 1700 U-MOS

TPC8210

30 8 15 20 —— 75 3530 U-MOS

III

TPC8206

60 5 50 —75 —17 800 U-MOS

N-ch

Single

N-ch

Dual

Remark

Part Number Maximum Ratings

Circuit

Configuration

TPC8104-H

–30 –565—120 —17 730 High-speed U-MOS

TPC8105-H

–30 –740—60 —32 1440 High-speed U-MOS

TPC8109

–30 –10 20 —30 —45 2260 U-MOS

III

TPC8108

–30 –11 13 —23 —77 3510 U-MOS

III

TPC8111

–30 –11 12 —18 —107 5710 U-MOS

TPC8113

–30 –11 10 —18 —107 4500 U-MOS

TPC8107

–30 –13 7 —15 —130 5880 U-MOS

III

TPC8112 ✽

–30 –13 6 —14 —130 5880 U-MOS

III

TPC8114 ✽

–30 –18 4.5 —6.8 —180 7480 U-MOS

TPC8115

–20 –10 —10 —14 115 9130 U-MOS

TPC8110

–40 –825—35 —48 2180 U-MOS

III

TPC8305

–20 –5—30 —50 24 2030 U-MOS

TPC8303

–30 –4.5 35 —65 —28 970 U-MOS

30 6 21 —32 —40 1700 U-MOS

–30 –4.5 35 —65 —28 970 U-MOS

30 5 50 —80 —16 475

-MOS

–30 –4.5 35 —65 —28 970 U-MOS

30 6 33 —46 —17 850 U-MOS

–30 –4.5 55 —90 —18 940 U-MOS

30 6 25 30 —— 17 940 High-speed U-MOS

III

30 8.5/1 18 21 —— 49 2295 U-MOS

III

TPC8403

TPC8A01

P-ch

Dual

P-ch

Single

N-ch/

P-ch

N-ch/

N-ch+SBD

TPC8401

TPC8402

DSS

(V) I

(A) R

DS(ON)

max (mΩ)

π-

MOS

π-

MOS

π-

MOS

gtyp.

(nC) C

iss

typ.

(pF)

✽: Al Strap type ★: Under development

TSSOP-8 Series Features

• Achieved RDS(ON) = 17mΩ for TPCS8204 employing U-MOS

III

design

• Common-drain types are available:

Ideal use for lithium-ion battery protection and reverse current protection

■ Characteristics

• Employed the third generation design of ultra-high cell

density trench technology (18 Mcell/cm2)

•

Reduced On-resistance by 25% than that of conventional products

(in comparison with Toshiba U-MOS II device)

Low On-resistance

N-channel 20-V device (TSSOP-8 / dual type)

Common-drain Type

Common-drain series suitable for reverse current prevention in mobile devices and

lithium ion secondary battery protection

DS(ON)

typ. (mΩ) @V

= 4 V

Dual type / VDSS = 20 V

DC-DC

converters

Charger

D2 S2 S2 G2

D1 S1 S1 G1

D2 S2 S2 G2

D1 S1 S1 G1

Reverse current prevention Conventional type

Common-drain

type

Total impedance

reduced by elimination

of external wiring

Wiring resistance included

since D1 and D2 are

externally wired together

■ Features

Control IC

Battery protection

■ Product Line-up

10V 4V 2.5V 2.0V

TPCS8004

200 1.3 800 ——— 12 380 π-MOS

π-MOS

TPCS8007

★200 1.9 500 ——— 10 630

TPCS8006

250 1.1 1000 ——— 11 380 π-MOS

——— — —

TPCS8008

★250 1.8 550

TPCS8102

–20 –6—20 38 —37 2740 U-MOS

TPCS8101

–30 –62540—— 37 1810 U-MOS

TPCS8104

–30 –11 12 18 —— 107 5710 U-MOS

TPCS8105

–30 –11 13.5 19.5 —— 107 5710 U-MOS

TPCS8205

20 5 —45 60 90 11 760 U-MOS

U-MOS

III

TPCS8209

20 5 —30 40 60 15 1280 U-MOS

III

TPCS8210

✽20 5 —30 40 60 15 1280 U-MOS

III

TPCS8204

20 6 —17 22 35 22 2160 U-MOS

III

TPCS8208

✽20 6 —17 22 35 22 2160 U-MOS

III

TPCS8211

20 6 —24 29 45 20 1590 U-MOS

III

TPCS8212

✽20 6 —24 29 45 20 1590 U-MOS

III

TPCS8302

–20 –6

–20 –5—35# 60 95 28.5 1590 U-MOS

III

—21# 30 80 33 2560 U-MOS

TPCS8303

N-ch Single

P-ch Dual

Remark

Part Number Maximum Ratings Circuit

Configuration

P-ch Single

N-ch Dual

DSS

(V) I

(A) RDS(ON) max (mΩ)C

iss

typ.

(pF)

typ.

(nC)

✽: Common-drain ★: Under development

Power MOSFET Characteristics

■ Package

The VS Series that achieves the one of the industries' thinnest class package (height: 0.85 mm max).

• VS-6 Series: Standard size (2.9 mm x 1.6 mm) that is suitable for general-purpose use.

• VS-8 Series:

The flat package offers more powers as compared with the VS-6 package, and the On-resistance is reduced

by 20% while the mounting area is reduced by 32%. In addition, the power dissipation is improved by 14%.

• PS-8 Series:

Achieving the same mounting area as the VS-6 Series, PS-8 is improved chip mounting capability,

widen mold width using flat leads. This Series is also reduced the On-resistance by 70%.

VS-8

2.9

0.95

8.1 mm2

2.8

(Unit: mm, typical values unless otherwise specified.)

VS-6

PS-8

2.9

1.9

0.65

5.5 mm2

2.9

2.8

0.65

8.1 mm2

10%

higher power

32%

downsizing

●DC-DC converters: notebook PCs, LCDs, PPDAs

●Switches: Cell phones, notebook PCs, USB switches, power management switches

●Motor drives: HDDs

■ Main Applications

2. VS Series

■ Features

• Achieved ultra low-On resistance employing U-MOS

design

• Zener diode between gate and source for all products

• Thin package whose height is as low as 0.85 mm (max) on a board.

■ Features

• Achieved ultra low-On resistance employing U-MOS

III

design

• Zener diode between gate and source for all products

• Thin package whose height is as low as 0.85 mm (max) on a board.

• 32% mounting area reduction compared to VS-6 (TSOP-6) employing

flat package with high cell density

• PD = 2.5 W @ t = 5s when a device mounted on a glass epoxy board

■ Product Line-up

VS-6 Series Line-up .... [Part Number: TPC6xxx]

VS-8 Series Line-up .... [Part Number: TPCF8xxx]

PS-8 Series Line-up .... [Part Number: TPCP8xxx]

■ Features

• The same mounting area as the VS-6 (TSOP-6) Series

• Using flat leads and the latest process, U-MOS, VS-6 Series is able to offer a

70% R

DS(ON) reduction compared to VS-6 Series.

• Zener diode between gate and source

■ Product Line-up

DSS

(V) I

(A) 10V 4.5V 2.5V 2.0V 1.8V

20 6 —30 45 60 —15 755 S2A U-MOS

20 6 —24 32 37 —17 1400 S2C U-MOS

III

30 6 30 50 ———13 610 S2B U-MOS

30 6 24 32 ———25 1250 S2D U-MOS

III

30 6 —28 35 41 —19 1420 S2E U-MOS

III

30 2.5 N-ch Dual 95 145 ———4.7 170 S4A U-MOS

–12 –5.5 —35 55 —90 20 1520 S3C U-MOS

III

–20 –2.7 —110 160 —300 6 470 S3E U-MOS

III

–20 –4.5 —60 100 180 —12 830 S3A U-MOS

–20 –5.5 —40 60 —120 19 1430 S3D U-MOS

III

–30 –4.5 60 100 ———11 500 S3B U-MOS

TPC6001

TPC6004

TPC6002

TPC6003

TPC6005

TPC6201

TPC6103

TPC6105

TPC6101

TPC6104

TPC6102

Marking RemarkPart Number Maximum Ratings

Circuit

Configuration

DS(ON)

max (mΩ)

N-ch

Single

iss

typ.

(pF)

typ.

(nC)

P-ch

Single

Marking RemarkPart Number Maximum Ratings Circuit

Configuration

DSS

(V)

(A) R

DS(ON)

max (mΩ)C

iss

typ.

(pF)

typ.

(nC)

10V 4.5V 2.5V 2.0V 1.8V

TPCF8001

30 7 N-ch Single 23 31 ———25.4 1270 F2A U-MOS

III

TPCF8101

–12 –6—28 40 —85 18 1600 F3A U-MOS

III

TPCF8103

–20 –5.5 —110 160 —300 6 470 F3C U-MOS

III

TPCF8102

–20 –6—30 41 —90 19 1550 F3B U-MOS

III

TPCF8104

–30 –62838———34 1760 F3D U-MOS

TPCF8201

20 3 N-ch Dual —49 66 100 —7.5 590 F4A U-MOS

III

TPCF8301

–20 –2.7 —110 160 —300 6 470 F5A U-MOS

III

TPCF8302

–20 –3—59 95 200 —11 800 F5B U-MOS

TPCF8303

–20 –3—58 87 —250 11 860 F5C U-MOS

TPCF8304

–30 –3.2 72 105 ———16 600 F5D U-MOS

30 4 48 77 ———10 470 U-MOS

III

–30 –3.2 72 105 ———14 600 U-MOS

TPCF8A01

20 3.0 N-ch+SBD —49 66 100 —7.5 590 F7A U-MOS

III

TPCF8B01

–20 –2.7 P-ch+SBD —110 160 —300 6 470 F8A U-MOS

III

P-ch Dual

TPCF8402

F6B

N-ch + P-ch

P-ch Single

DSS

(V) I

(A)

RDS(ON) max (mΩ)C

iss

typ.

(pF)

typ.

(nC)

10V 4.5V 2.5V 1.8V

TPCP8201

30 4.2 50 77 ——10 470 U-MOS

III

π-MOS

U-MOS

III

U-MOS

III

TPCP8401

20 0.1 —3(4V) 4 ——9.3

TPCP8402

–12 –5.5 —38

77 58 103

—20

10 1520

470

TPCP8J01

30 4.2 50

–30 –3.4 72 105 ——14 600 U-MOS

–32 –6.0 35 49(4V) —

—

—34 1762 U-MOS

50 0.1 ————— — NPN

N-ch / P-ch

Load Switch

N-ch Dual

Remark

Part Number Maximum Ratings Circuit

Configuration

N-ch + P-ch

N-ch + NPN

Power MOSFET Characteristics

■ Features

Drain Current I

(A)

10 100 10001.00.1

0.1

1.0

100

Power Dissipation P

(W)

PW MINI

SOP-8

PW MOLD

TO-220

(SM)

(4.6

2.5)

(6.5

3.5)(6.8

5.5)

(10.0

10.0)

( ) : Body Size

Unit : mm

(15.5

15.0)

(6.8

5.5)

TO-3P

(SM)

TFP

NEW

Drain Current I

(A)

Drain-source voltage V

DSS

(V)

TFP vs TO-220SM

TO-220

100

10 100 1000

TFP

■ Applications

■ TFP line-up

■ DC-DC converters ■ Motherboards ■ Automotive equipment

Package range for surface-mount devices

TFP Stands for Thin Flat Package

■ Thin flat package has a mounting volume 58% less than that of the TO-220SM.

■ Separate package inputs and outputs enable stable equipment operation.

■ Improved heat dissipation characteristic enables mounting of higher-power devices.

3. TFP (Thin Flat Package) Series

DSS

(V) I

(A) V

=10V V

=4V

-100

100

150

200

250

400

450

500

600

-16

-18

210

6.0

5.0

8.0

5.8

(5.8)

120

105

550

400

1500

850

520

1000

320

120

10.0

180

140

110

116

210

(196)

100

1100

2900

5000

3530

5450

3700

9300

(12400)

4100

1380

2030

2080

4000

2090

1340

1600

780

1300

2040

1200

-π-MOS

U-MOS

III

U-MOS

-π-MOS

π-MOS

2SJ619

2SJ620

2SK3397

2SK3389

2SK3439

2SK3440

2SK3441

2SK3842

2SK3442

2SK3387

2SK3443

2SK3444

2SK3388

2SK3445

2SK3499

2SK3544

2SK3466

2SK3538

2SK3398

2SK3438

RemarksPart Number Maximum Ratings R

DS(ON)

max (mΩ)C

iss

typ.

(pF)

typ.

(nC)

★: Under development

★

2.8

TFP: 2SK3389 TO-220SM:

equivalent to 2SK3389

Unit: mm

4.5

13.5

TFP: 2SK3389 30 V, 75 A, 5 mΩ Max

100

120

140

160

50 100 150

Drain Current I

(A)

Channel, Drain Fin, Source Fin

Temperature

(°C)

Drain fin

Source fin

Measured point

TO-220SM: equivalent to 2SK3389

100

120

140

160

50 100 150

Drain Current I

(A)

Channel, Drain Fin and Source Lead

Temperatures

(°C)

Drain fin

Source lead

Measured point

3-1. Heat Dissipation Characteristic

Transient Heat Resistance r

th (ch-a)

(°C/W)

Pulse Width t

(S)

TO-220SM

TFP

0.001 0.01 0.1 1 10 100 1000

0.01

0.1

100

Transient Heat Resistance r

th (ch-a)

(°C/W)

Pulse Width t

(S)

0.001 0.01 0.1 1 10 100 1000

0.01

0.1

100

Thermal resistance

TFP with mounting area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a)

almost equiv alent to those of the TO-220SM (when mounted on an HIT board).

Actual rating / heat resistance between channel and case

(with infinite heat dissipation heat sink mounted)

Actual rating / heat resistance between channel and ambient

(with 3 cm × 3 cm HIT mounted)

TO-220SM

TFP

Single pulse Single pulse

Application of DC current (with infinite heat dissipation heat sink mounted)

The source fin of the TFP generates less heat than the source lead of the TO-220SM due to the TFP'S efficient heat dissipation.

Channel temperature

Drain fin temperature

Source fin temperature

Channel temperature

Drain fin temperature

Source lead

temperature

Power MOSFET Characteristics

Input control signal

S2 D

High load current

Load

Stable circuit operation

The advantage of MOSFETs is that, because of

their high input impedance, they allow high

output control with low power drive. However,

their disadvantage is that they are susceptible

to malfunction due to noise. TFP Series devices

have four pins, allowing the input drive to be

kept separate from the outputs, thus reducing

the risk that the outputs will affect the input.

3-2. For Stable Circuit Operation and High-current, High-speed Switching

L-component influence on high-current, high-speed switching

Lead impedance, which causes problems with high-current, high-speed switching in DC/DC converters, is reduced.

High impedance

TO-220SM

TFP

S1 S2

DVDD

= L (di/dt)

R Load

High-current, high-speed switching

increases the influence of the

L-component between the source

and GND.

Use of the S1 pin for gate input

signal return stabilizes circuit

operation by eliminating the

influence of the L-component.

Switching waveform

When the S1 pin is not

used for input signal return

(3 pins):

Shorter rise time

Stable circuit operation

tr = 5.4 ns, ton = 25.1 ns

VDS turend on at 40%

When the S1 pin is used

for input signal return

(4 pins):

tr = 4.6 ns, ton = 22.1 ns

The four-pin structure

results in a shorter rise

time and more stable

switching, all of which help

to reduce the risk of

abnormal oscillation.

3-pin, 4-pin 4-pin

3-pin

VGS = 2V/div, VDS = 5V/div, tW = 20ns/div VGS = 2V/div, VDS = 5V/div, tW = 100ns/div

VGS = 2V/div, VDS = 5V/div, tW = 100ns/div

Insert a coil of L = 17 nH between gate and source

Power MOSFET Characteristics

■ Package Dimensions

4 . TO-220SIS π-MOS

Series

13.0 MIN

12.5 MIN

L1L2

Existing package: TO-220NIS

Board

Unit: mm

TO-220SIS

ø3.2

2.7

3.9 3.0

10 ø3.2

3.9 3.0

4.5

2.7

4.5

1–

= 2.8

5.6 MAX

2.8 MAX

New package

DSS

(V) V

= 10VI

(A) Conventional Products

DS(ON)

max (Ω)Q

typ.

(nC) C

iSS

typ.

(pF)

Maximum Ratings

New ProductsSeries

π-MOS

2SK3757

2SK3563

2SK3561

2SK3568

2SK3767

2SK3567

2SK3562

2SK3667

2SK3569

2SK3797

2SK3566

2SK3564

2SK3798

2SK3565

2SK3742

2SK3799

2SK3543

2SK2662

2SK2543

2SK2842

2SK3067

2SK2750

2SK2545

2SK2996

2SK2843



2SK2718

2SK2700



2SK2717



450

500

600

900

3.5

7.5

(13)

2.5

(8)

2.45

1.5

0.85

0.52

4.5

2.2

1.25

1.0

0.75

(0.45)

6.4

4.3

3.5

2.5

(1.4)

(62)



330

550

1050

1500

320

550

1050

1300

1500

(3150)

470

700



1150



= 4V



■ Features

■ Line-up

★

★: Under development

• The shorter the standoff height is achieved, the lower the product height on a PCB will be; hence, the mounting height is

reduced by approximately 2.8 mm as compared to the existing package, TO-220NIS. This contributes to equipment's size

reduction thinner size.

• The chip design optimization reduced Qg characteristics. Also, the switching characteristics realized 10-% faster than that of

exsisting products.

• Improved heat dissipation by employing a Cu connector.

■ Improved Heat Dissipation

■ Comparison of Electrical Characteristics with Conventional and New Products

Power dissipation

efficiency

improvement

Conventional Product New Products

2SK2717 2SK3565

DSS

(V) 900

900

(A) 5

DS(ON)

(Ω) 2.5(max)

2.5

(max)

Qg(nC) 45(typ.)

(typ.)

toff(ns) 200(typ.)

170

(typ.)

250

230

210

190

170

150

toff (ns)

toff

Qg (nC)

28 (typ.)

250

230

210

190

170

150

toff (ns)

toff

typ.

Conventional product: 2SK2717 New product: 2SK3565

15-% improvement on

toff characteristics as

compared to the

conventional product

Switching-Off W av ef orm Comparison

t = 50 ns/div

= 2 A/div

= 2 V/div

= 50 V/ns

2SK3565

2SK2717

Generated heat

from the chip surface is

dissipated to the pins on the

both ends via the

connectors.

Power MOSFET Characteristics

5. L 2

-π-MOS

V Series

■ High-integration (4.4 M cells

inch2), ultra-low On-resistance series based on original technologies

• On-resistance per unit area reduced by 15% (compared to L2 -π-MOS

, RDS(ON) max)

• Operation at logic level voltage [VGS = 4-V drive] (Vth = 0.8 V to 2.0 V)

• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode

• Protection zener diode between gate and source

■ N-ch product line-up

TO-220AB

2SK2844 30 0.016 0.02 10 18 0.026 0.035 4 18 4035 60

2SK2614 50 0.032 0.046 10 10 0.055 0.08 4 5 2520 40 TO-220NIS

2SK2507 0.046 10 12 0.058 0.08 4 6 2550 0.03425 30 TO-220NIS

2SK2886 50 0.014 0.02 10 25 0.027 0.036 4 25 6645 40

TO-3P (N)

2SK2744 50 0.015 0.02 10 25 ———— 6845 125 TO-3P (N)

2SK2550 ————50 0.024 0.030 10 25 3645 100 TO-3P (N)

2SK2551 ————50 0.0072 0.011 10 25 13050 150

5.81

2SK2964 PW-Mini30 0.13 0.18 10 0.18 0.25 4 12 1.5

DSS

(V) I

(A) P

(W)

DS(ON)

(Ω)R

DS(ON)

(Ω)

typ.

(nC)

Package Type typ. max typ. max

Part Number

TO-220FL/SM

2SK3089 0.03 10 20 ——— — 2330 0.02540 50 TO-220FL/SM

2SK3090 30 0.016 0.02 10 25 ——— — 3945 60 TO-220FL/SM

2SK3127 30 0.0095 0.012 10 25 ———— 6645 65 TO-3P (N)

2SK3128 ————30 0.0095 0.012 10 30 6660 150 TO-3P (SM)

2SK3125 ————30 0.0053 0.007 10 30 13070 150

2SK2989 LSTM50 0.125 0.9 0.15 10 2.5 0.24 0.33 4 1.3 6.5

(V) I

(A) V

(V) I

(A)

TO-220FL/SM

2SK3051 0.024 0.03 10 25 ——— — 3650 45 40

2SK2233 60 10

45 100 TO-3P (N) 0.022 0.03 25 0.04 0.055 4 15 60

2SK2266 60 10

45 65 TO-220FL/SM 0.022 0.03 25 0.04 0.055 4 15 60

2SK2312 60 10

45 45 TO-220NIS 0.013 0.017 25 0.019 0.025 4 25 110

2SK2376 60 10

45 100 TO-220FL/SM 0.013 0.017 25 0.019 0.025 4 25 110

2SK2398 60 10

45 100 TO-3P (N) ——— —0.022 0.03 25 60

2SK2173 60 10

50 125 TO-3P (N) 0.013 0.017 25 0.019 0.025 4 25 110

2SK2445 60 10

50 125 ——— —110TO-3P (N) 0.014 0.018 25

102SK2962 100 1 0.9 LSTM 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3

PW-Mini

2SK2963 100 10

1 0.5 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3

2SK2267 60 60 150 0.008 0.011 30 0.012 0.015 4 30 170TO-3P (L)

2SK2313 60 10

60 150 0.008 0.011 30 0.012 0.015 4 30 170TO-3P (N)

TPS

2SK2200 100 10

3 1.3 0.28 0.35 2 0.36 0.45 4 2 13.5

2SK2201 100 3 20 PW-Mold 0.28 0.35 2 0.36 0.45 4 2 13.5

PW-Mold

2SK2399 100 10

5 20 0.17 0.23 2.5 0.22 0.3 4 2.5 22

2SK2400 100 10

5 1.2 TPS 0.17 0.23 2.5 0.22 0.3 4 2.5 22

TO-220NIS

2SK2391 100 10

20 35 0.068 0.085 10 0.09 0.13 4 10 50

2SK2314 100 10

27 75 TO-220AB 0.066 0.085 15 0.09 0.13 4 15 50

TO-220FL/SM

2SK2789 100 1027 60 0.066 0.085 15 0.09 0.13 4 15 50

2SK2745 TO-3P (N)50 0.00750 150 0.0095 10 25 0.011 0.016 4 25 130

LSTM 5.8

2SK2961 60 0.2 0.27 10 1 0.26 0.38 4 12 0.9

2SK2615 60 0.23 0.3 10 0.33 0.44 4 1 62 0.5 PW-Mini 1

2SK2229 2.560 0.12 0.16 10 0.2 0.3 4 1.3 125 1.2 TPS

PW-Mold

2SK2231 0.12 0.16 10 2.5 0.2 0.3 4 1.3 1260 5 20

2SK2782 60 0.039 0.055 10 10 0.06 0.090 4 5 2520 40 DP

TO-220NIS

2SK2232 60 0.036 0.046 10 12 0.057 0.08 4 12 3825 35 TO-220FL/SM

2SK2311 0.036 0.046 10 12 0.057 0.08 4 12 3860 25 40 TO-220 NIS

2SK2385 60 0.022 0.03 10 18 0.04 0.055 4 15 6036 40

■ P-ch product line-up

■ Line-up

■ Features

6. 2.5-V Drive π-MOS

V Series

2SJ465 PW-Mini

PW-Mold

PW-Mini

PW-Mold

2SJ439

2SK2549

2SK2493

1.0

0.28

0.38

0.12

0.5

–16

–2

–5

–2.5

2.5

–0.5

–2.5

0.5

2.5

Package Type

Maximum Ratings

Part Number V

(V)

DS(ON)

max

(Ω)

(A) I

(A)

0.71

0.20

0.29

0.10

–4

–1.0

–2.5

1.0

2.5

(V)

DS(ON)

max

(Ω)I

(A)

(W)V

DSS

(V)

• 2.5-V drive: Gate drive voltage reduced from 4 V to 2.5 V

• Vth = 0.5 V to 1.1 V: Designed to operate at high temperatures with threshold voltage width reduced from 1.2 V to 0.6 V

• Avalanche withstand capability: Built-in protection zener diode between gate and source; cell structure used to improve

avalanche withstand capability

DSS

(V) I

(A) P

(W)

Package Type

Part Number

2SJ511 – 30 0.32 0.45 – 10 – 1 0.55 0.76 – 4 – 1 5.5– 2 1.5 PW-Mini

2SJ525 – 30 0.1 0.12 – 10 – 2.5 0.17 0.2 – 4 – 2.5– 5 1.3 TPS 27

2SJ360 – 60 0.55 0.73 – 10 – 0.5 0.86 1.2 – 4 – 0.5 6.5– 1 0.5 PW-Mini

2SJ377 – 60 0.16 0.19 – 10 – 2.5 0.24 0.28 – 4 – 2.5 22– 520PW-Mold

2SJ378 – 60 0.16 0.19 – 10 – 2.5 0.24 0.28 – 4 – 2.5 22– 5 1.2 TPS

2SJ438 – 60 0.16 0.19 – 10 – 2.5 0.24 0.28 – 4 – 2.5 22– 525TO-220NIS

2SJ349 – 60 0.033 0.045 – 10 – 10 0.05 0.09 – 4 – 10 90– 20 45 TO-220NIS 0.045 – 10 – 10 0.05 0.09 – 4 – 10 90

TO-220FL/SM

2SJ401 – 60 0.033– 20 100 TO-220NIS

2SJ334 – 60 0.029 0.038 – 10 – 15 0.046 0.06 – 4 – 15 110– 30 45 TO-220FL/SM 0.029 0.038 – 10 – 15 0.06 – 4 – 15 1102SJ402 – 60 – 30 100 0.046 6.31.682SJ508 – 100 1.34 1.9 – 10 – 0.5 2.5 – 4 – 0.5– 1 1.5 PW-Mini 6.31.34 1.9 – 10 – 0.5 1.68 2.5 – 4 – 0.52SJ509 – 100 – 1 0.9 LSTM

TO-220NIS

2SJ380 – 100 0.15 0.21 – 10 – 6 0.25 0.32 – 4 – 648– 12 35

TO-220NIS – 92SJ464 – 100 0.064 0.09 – 10 0.085 0.12 – 4 – 9 140– 18 45 TO-220FL/SM 0.15 0.21 – 10 0.25 0.32 – 4 – 6482SJ412 – 100 – 16 60 – 6

LSTM 182SJ537 – 50 0.16 0.19 – 10 – 2.5 0.27 0.34 – 4 – 1.3– 5 0.9

2SJ507 – 60 0.5 0.7 – 10 0.72 1.0 – 4 – 0.5 5.6– 1 0.9 LSTM – 0.5

typ.

(nC)

DS(ON)

(Ω)R

DS(ON)

(Ω)Qg

typ.

(nC)

typ. max typ. max

(V) I

(A) V

(V) I

(A)

Power MOSFET Characteristics

7. U-MOS

III

(Trench Type) Series

[1] Reduces 60% R

DS(ON)

by per unit area

• R

DS(ON)

= 5.8 m (max) MOSFET housed in TO-220 package • Operate with logic level voltage (V

= 4 V)

Planar structure

Drain

Source Gate Poly Si

PPP

NNN N

N+

Trench (U-MOS) structure

Source Gate

Poly Si

Drain

P P P

N+N+N+

N+

(V)

DS(ON)

max

(mΩ)

DS(ON)

max

(mΩ)Remarks

(A) I

(A)

2SK2466

2SK3084

2SK3236

2SJ668

2SK3662

2SK3842

2SK3844

2SK3845

TO-220NIS

TO-220FL/SM

TO-220NIS

PW-Mold

TO-220NIS

TFP

TO-220NIS

TO-3P(N)

Motor drive solenoids

Lamp drivers

DC-DC converters

170

12.5

5.8

125

(W)V

DSS

(V)

100

–60

–5

–10

–2.5

250

–

–4

–

–2.5

–

196

Package Type

Maximum Ratings

Applications

Part

Number

U-MOS

III

2SK2985

= 10 V

0 0.2 0.4 0.6 0.8 1.0

- V

Drain Current I

(A)

Drain Current I

(A)

Drain-source Voltage V

(V) Drain-source Voltage V

(V)

Conventional

devices

Common

source

TC = 25ºC

2SK2985

= 4 V

0 0 0.2 0.4 0.6 0.8 1.0

- V

Common

source

TC = 25ºC

typ.

(nC)

High-integration is achieved using trench structure technique. Low-voltage driving (VGS = 4V) is

possible because of ultra-low On-resistance.

■ Line-up

■ Features of U-MOS

■ Features

• High density by the submicron technology (phase

= 10 M cell / inch2, phase

= 30 M cell / inch2)

• Reduces 60% RDS(ON) by per unit area (as compared to the maximum RDS(ON) of the conventional L2-π-MOS

)

• Possible to operate by logic level voltage (VGS = 4 V)

• Avalanche withstanding capability guarantee and progress in di/dt capability.

• Protection zener diode between gate and source

Conventional

devices

8. π-MOS

VII

Series

■ Comparison of Switching Characteristics with π-MOS

■ Line-up

DS(ON)

max

(mΩ)

(A)

2SK3669 PW-Mold

125

Ciss

typ.

(pF)

480

Crss

typ.

(pF)

typ.

(nC)

8.0

Qsw

typ.

(nC)

4.2

DSS

(V)

100 10

Package Type

Maximum Ratings

Part Number

With employing submicron technology and reducing gate charge, this latest series realized

extremely fast speed and low RDS(ON).

■ Features ■ Dynamic Input / Output Characteristics

• Low RDS(ON)

• Total gate charge (Qg) reduction

• Fast speed switching

• High avalanche withstanding capability

■ Applications

• Digital amps

• DC-DC converters

• Motor drives

Off

2SK2399 (π-MOS

) 2SK3669 (π-MOS

VII

)

2SK2399 (π-MOS

) 2SK3669 (π-MOS

VII

)

= 10 V/div

= 2 V/div

= 10 V/div

= 2 V/div

= 10 V/div

= 2 V/div

VGS = 2 V/div

= 10 V/div

10 ns/div 10 ns/div

50 ns/div 50 ns/div

Total gate charge Qg(nC)

00 5 10 15 20 25 30

Gate-source voltage V

(V)

65% reduction

2SK3669

(π-MOS

VII

)2SK2399

(π-MOS

)

Common source

Tc = 25 ºC

= 10 A

= 80 V

Pulse test

Power MOSFET Characteristics

9. π-MOS

V Series (VDSS = 150 V to 250 V)

200-V Series for Cs / Cy switching in monitors

• Reduced On-resistance per unit area

• Chip size smaller than conventional chips and device cost reduced

• Superior breakdown voltage characteristics due to optimized cell structure

• Guaranteed absolute maximum voltage rating between gate and source: V

GSS = ±

20 V

• Products with VDSS of 200 suitable for resonance capacitance (Cs

Cy)

■ Line-up

■ Features

(V)

(W)

DS(ON)

DSS

(V) I

(A) (Ω)I

(A)

Package Type

Maximum Ratings

Applications Part Number

typ.

(nC)

typ. max

DC-DC converters

Monitors

Motor controllers

2SJ618 –180 –10 130 TO-3P(N) 0.37 –10 –518

2SK407 –200 –5 30 TO-220NIS 0.8 1.0 –10 –2.5 20

2SJ567 –2.5 20 PW-Mold 1.6 2.0 –10 –1.5 10

2SJ610 –2 20 PW-Mold 1.85 2.55 –10 –1.0 24

2SJ512 –250 –5 30 TO-220NIS 1.0 1.25 –10 –2.5 22

2SJ516 –6.5 35 TO-220NIS 0.6 0.8 –10 –329

2SK3205 150 5 20 PW-Mold 0.36 0.5 10 2.5 12

2SK2882 18 45 TO-220NIS 0.08 0.12 10 9 57

2SK3497 180 10 130 TO-3P(N) 0.15 10 5 –

2SK2992 1 1.5 PW-Mini 2.2 3.5 10 0.5 3

2SK2835 5 1.3 TPS 0.56 0.8 10 2.5 10

2SK2381 5 25 TO-220NIS 0.56 0.8 10 2.5 10

2SK2920 5 20 PW-Mold 0.56 0.8 10 2.5 10

2SK2350 200 8.5 30 TO-220NIS 0.26 0.4 10 5 17

2SK2965 11 35 TO-220NIS 0.15 0.26 10 5.5 30

2SK2382 15 45 TO-220NIS 0.13 0.18 10 10 40

2SK2401 15 75 TO-220FL/SM 0.13 0.18 10 10 40

2SK3176 30 150 TO-3P(N) 0.038 0.052 10 15 125

2SK3462 3 20 PW-Mold 1.2 1.7 10 1.5 12

2SK3342 4.5 20 PW-Mold 0.8 1.0 10 2.5 10

2SK2417 7.5 30 TO-220NIS 0.42 0.5 10 3.5 20

2SK2914 7.5 20 TO-220AB 0.42 0.5 10 3.5 20

2SK2508 250 13 45 TO-220NIS 0.18 0.25 10 6.5 40

2SK2598 13 60 TO-220FL/SM 0.18 0.25 10 6.5 40

2SK2993 20 100 TO-220FL/SM 0.082 0.105 10 10 100

2SK2967 30 150 TO-3P(N) 0.048 0.068 10 15 132

2SK2995 30 90 TO-3P(N)IS 0.048 0.068 10 15 132

–

10. π-MOS

V Series (VDSS = 400 V to 700 V)

High-performance series for 100-V AC input-switching power supplies

• Low-drive-power, high-speed (Qg reduced by 40%, tf by 30%)

• Guaranteed V

GSS = ±30 V for every device in product line

• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode

• Protection zener diode between gate and source

■ Line-up

■ Features

AC 115 V

switching power

supplies

Ballst inverters

Motor controllers

Package Type

Maximum Ratings

Applications Part Number

typ.

(nC)

2SK3498

2SK2679

2SK2838

2SK2952

2SK2841

2SK2949

2SK3472

2SK3126

2SK2998

2SK3302

2SK3471

2SK2599

2SK2862

2SK2661

2SK2662

2SK2991

2SK2542

2SK2543

2SK2776

2SK2601

2SK2842

2SK3068

2SK2916

2SK2698

2SK2917

2SK2837

2SK3117

2SK3132

2SK3371

2SK2846

2SK2865

2SK3067

2SK2750

2SK3085

2SK2544

2SK2545

2SK2777

2SK2602

2SK2996

2SK2843

2SK2866

2SK2889

2SK2699

2SK2953

2SK2915

2SK3265

2SK3453

400

450

500

600

700

0.9

1.3

0.5

1.3

125

100

150

250

1.3

125

100

150

PW-Mold

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-220 AB

TO-220FL/SM

PW-Mold

TO-220NIS

LSTM

TPS

PW-Mini

TPS

TO-220NIS

TO-220 AB

TO-220NIS

TO-220FL/SM

TO-220 AB

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-220NIS

TO-220FL/SM

TO-3P(N)IS

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

TO-3P(SM)

TO-3P(L)

PW-Mold

TPS

PW-Mold

TO-220NIS

TO-220AB

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-220NIS

TO-220AB

TO-220FL/SM

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

TO-220NIS

TO-3P(N)IS

4.2

0.84

0.4

4.0

0.48

2.9

1.35

0.75

0.56

0.4

0.35

0.21

0.07

6.4

4.2

1.7

0.9

0.74

0.54

0.5

0.31

0.72

5.5

1.2

0.55

4.6

0.65

3.2

1.5

0.85

1.0

0.52

0.4

0.27

0.095

9.0

5.0

2.2

1.25

1.0

0.75

0.65

0.4

1.0

0.5

0.25

2.5

0.5

1.8

5.7

3.8

280

DS(ON)

(A)

DSS

(V) 1

5.5

8.5

0.5

3.5

(W) typ. max V

(V) I

(A)

(Ω)

Power MOSFET Characteristics

11. High-Speed π-MOS

V Series (VDSS = 450 V to 600 V)

2SK3310 (high speed)

2SK3126 (conventional device)

100ns/div

Switching loss reduced by 40%

2SK2842 (conventional device)

200ns/div

2SK3313 (high speed)

200ns/div

To allow the development of high-efficiency portable equipment, Toshiba has developed two

Series of high-speed Power MOSFET devices. The two series are as follows:

The High-Speed Switching Series for AC adapters and switching power supplies

The High-Speed Switching Series for motor controllers and inverter circuits

• High-Speed Switching Series: Achieves faster switching speed than the existing π-MOS V Series which are

currently well-established in the marketplace (t

off-switching is 38% faster).

• High-Speed Diode Series: Achieves faster parasitic diode speed by using lifetime control (trr 100 ns).

■ Line-up

■ Features of MACH Series

Faster parasitic diode

■ Characteristics of high-speed diode series

• MACH Series

• High-speed diode series (HSD Series) line-up

2SK3310 TO-220NIS

TO-220FL/SM

2SK3309 0.65

0.65

450

450 10

10 10

10 5

523

23 2SK3126

—

TO-220FL/SM

2SK3403 0.4

100450 13 10 6 34 —

TO-220FL/SM

2SK3312 1.25

600 6 10 3 25 —

TO-220FL/SM

2SK3437 1

80600 10 10 5 28 2SK2996

TO-220FL/SM

2SK3399 0.75

100600 10 10 5 35 2SK2866

Package Type Equivalent

Conventional

Device

Equivalent

Conventional

Device

Maximum Ratings

Applications

AC adapters

Switching power

supplies

Part Number

(V)

(A) I

(A)

(W)V

DSS

(V)

DS(ON)

max

(Ω)

typ.

(nC)

TO-220NIS

2SK3316

2SK3313

2SK3314

2SK3131

2SK3130

1.8

0.62

500

500 5

12 10

10 2.5

660

90 2SK2662

TO-220FL/SM

2SK3417 1.8

50500 5 10 2.5 60 2SK2662

2SK2842

TO-3P(N)

TO-3P(L)

TO-220NIS

0.49

0.11

1.55

150

250

500

600

105

2SK2698

2SK3132

2SK2545

Package Type

Maximum Ratings

Applications

Motor controllers

Inverters

Switching power

supplies

Part Number

(V)

(A) I

(A)

(W)V

DSS

(V)

DS(ON)

max

(Ω)

typ.

(ns)

VDS=50V/div

ID=0.5A/div

PD=0.5µJ/div

VGS=5V/div

VDS=50V/div

PD=0.5µJ/div

VGS=5V/div

ID=10A/div

12. π-MOS

III Series (VDSS = 800 V to 1000 V)

High-performance, high-speed devices for 200-V AC input-switching power supplies

■ Features

• Low drive-power, high-speed devices (Qg reduced by 60%, tf reduced by 25%)

• Guaranteed VGSS = ±30 V.

• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode

• Protection zener diode between gate and source

■ Line-up

• π-MOS

III

• π-MOS

3.0

1.9

1.3

1.0

8.0

5.6

3.73

3.7

2.3

2.0

1.1

1.05

1.2

1.05

1.4

3.6

2.2

1.7

1.2

9.0

6.4

4.3

2.5

1.4

1.25

1.4

1.25

1.7

1.5

3.0

3.5

4.0

0.5

1.5

3.0

2.5

3.5

4.0

8.0

2SK2603 TO-220AB800 1003

2SK2604

TO-3P(N)

800

125

2SK2605

800

TO-220NIS45

2SK2746 7TO-3P(N)

800 150

2SK2607

2SK2884

2SK3301

9TO-3P(N)800 150

800

TO-220FL/SM100

1PW-Mold900 20

2SK2733 1

900 TO-220AB60

TO-220NIS

2SK2718 2.5900 40

2SK2608 3900 TO-220AB100

2SK2700 3900 TO-220NIS40

2SK2719 3 TO-3P(N)900 125

2SK2610 5TO-3P(N)900 150

2SK2717 5900 TO-220NIS45

2SK3700 5900 TO-220NIS45

2SK2749 7 TO-3P(N)900 150

2SK2847 8 TO-3P(N)IS900 85

2SK2611 9 TO-3P(N)900 150

2SK2883 3

800 TO-220FL/SM75

2SK2845 1900 DP40

2SK3017 8.5 TO-3P(N)IS900 90

2SK2968 10 TO-3P(N)900 150

2SK2606 8 TO-3P(N)IS800 85

(W)

DS(ON)

(Ω)

DSS

(V) I

(A)

Package Type typ. max V

(V) I

(A)

Maximum Ratings

Part Number

typ.

(nC)

2SK2613 8 TO-3P(N)1000 150

2SK3633 TO-3P(N)800 150 1.35

1.3

1.7

1.6

3.5

4.0

2SK3473 9

900 TO-3P(N)150

(W)

DS(ON)

(Ω)

DSS

(V) I

(A)

Package Type typ. max V

(V) I

(A)

Maximum Ratings

Part Number

typ.

(nC)

Power Modules

N-ch x 4

P-ch x 4

N-ch x 2 +

P-ch x 2

MP4210

MP4209

MP4211

MP4208

MP4212

100

–60

(typ.) (max)

–5

–10

2.5

2.0

–2.5

2.5

–2.5

0.12

0.28

0.16

0.20

0.12

0.16

0.35

0.19

0.30

0.16

0.19

(V) I

(A)

(Ta = 25ºC)

(W)

DS(ON)

(Ω)

DSS

(V) I

(A)

Maximum Ratings Electrical Characteristics (Ta = 25ºC)

Polarity and

Circuit

Configuration Part Number 4-V Drive

• S-12M Series (4in1, 6in1)

N-ch x 2 +

P-ch x 2

with FB-Di

N-ch x 4

N-ch x 3 +

P-ch x 3

MP4411

MP4412

MP4410

MP6404

100

–60

4.4

(typ.) (max)

–5

–10

2.0

2.5

–2.5

0.28

0.17

0.12

0.16

0.35

0.23

0.16

0.19

(V) I

(A)

(Ta = 25ºC)

(W)

DS(ON)

(Ω)

DSS

(V) I

(A)

Maximum Ratings Electrical Characteristics (Ta = 25ºC)

Polarity and

Circuit

Configuration Part Number 4-V Drive

• F-12M Series (4in1, 6in1)

N-ch x 2 +

P-ch x 2

with FB-Di

MP4711

100 36

(typ.) (max)

510

●

2.50.17 0.23

(V) I

(A)

(Ta = 25ºC)

(W)

DS(ON)

(Ω)

DSS

(V) I

(A)

Maximum Ratings Electrical Characteristics (Ta = 25ºC)

Polarity and

Circuit

Configuration Part Number 4-V Drive

• S-10M Series (4in1)

Power modules enable high-density mounting and are the simples of all multi-chip devices in

structural terms. Use of these modules enables the construction of compact power supplies for

electronic equipment.

■ Line-up

Power MOSFET Product List

Part

Number Series Package Type Part

Number Series Package Type

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

TO-220FL/SM

π-MOS

2SJ200 TO-3P(N)

TO-3P(N)

– 180 – 10 0.83

2SJ201 – 200 – 12 0.63

TO-220NIS

TO-3P(N)IS

2SJ304 – 60 – 14 0.12

– 60 – 14 0.12

2SJ312

2SJ313 – 180 – 1 5.0

2SJ334 – 60 – 30 0.038 P 25

P 25

2SJ338 PW-Mold – 180 – 1 5.0

2SJ349 – 60 – 20 0.045

TPS

2SJ360 PW-Mini

PW-Mini

PW-Mold

– 60 – 1 0.73

2SJ380 – 100 – 12 0.21

2SJ377 – 60 – 5 0.19

0.19

2SJ439 PW-Mold – 16 – 5 0.2 P 25

2SJ440 – 180 – 9 0.8

2SJ465 – 16 – 2 0.71 P 25

L -π-MOS

TO-220FL/SM

2SJ401 – 60 – 20 0.045

L -π-MOS

2SJ378 – 60 – 5

L -π-MOS

π-MOS

TO-220NIS

2SJ464 – 100 – 18 0.09 P 25

L -π-MOS

π-MOS

2SJ315 PW-Mold – 60 – 5 0.25

L -π-MOS

TO-220FL/SM

2SJ402 – 60 – 30 0.038

L -π-MOS

TO-220NIS

2SJ407 – 200 – 5 1.0 P 28

π-MOS

TO-220FL/SM

2SJ412 – 100 – 16 0.21

L -π-MOS

TO-220NIS

2SJ438 – 60 – 5 0.19

L -π-MOS

2SJ619

TO-220NIS – 250 – 6.5 0.8 P 28

– 30 – 2 0.45

P 25

PW-Mini

– 100 – 1 1.9

– 100 – 1 1.9LSTM

L -π-MOS

2SJ511

2SJ508

2SJ509

2SJ512

PW-Mini

TO-220NIS P 28– 250 – 5 1.25

2SJ516

π-MOS

P 25– 60 – 1 0.7

L -π-MOS

2SJ507 LSTM

TFP P 18– 100 – 16 0.21

2SJ525

2SJ537

2SJ567

L -π-MOS

π-MOS

TPS

PW-Mold

P 25– 30 – 5 0.12

– 200 – 2.5 2.0 P 28

LSTM P 25– 50 – 5 0.19

2SJ610 PW-Mold P 28– 250 – 2 2.55

π-MOS

2SJ620 TFP P 18– 100 – 18 0.09

2SJ618 TO-3P(N) – 180 – 10 0.37

π-MOS

L -π-MOS

TO-3P(N)

TO-220AB 1000 4 3.8

1000 8 1.8

2SK1119

2SK1120

π-MOS

TO-3P(N) 100 5 3.8

2SK1359

1000 7 1.8TO-3P(N)IS

TO-3P(N)

TO-3P(L)

100 50 0.032

100 60 0.02

2SK1365

2SK1381

2SK1382

L -π-MOS

U-MOS

π-MOS

TO-3P(L)

TO-3P(N)

TO-3P(L)

32 0.095300

1000 12 1.0

180 10 0.83

200 12 0.63

500 25 0.2

2SK1486

2SK1489

2SK1529

2SK1530

2SK1544

π-MOS

1000 4 3.82SK1930 TO-220FL/SM

π-MOS



PW-Mold – 60 – 5 0.17

2SJ668 P 26

P 28







TO-220NIS 180 1 5.02SK2013 π-MOS

TO-3P(N) P 2460 45 0.03

TO-220NIS 60 25 0.046 P 242SK2232

TO-3P(N) P 2460 45 0.032SK2233

TO-220FL/SM P 2460 45 0.032SK2266

TO-3P(L) P 2460 60 0.0112SK2267

TO-220NIS 700 5 1.72SK2274

TO-220FL/SM P 240.04660 252SK2311

TO-220NIS 60 45 0.017 P 242SK2312

TO-3P(N) P 2460 60 0.0112SK2313

TO-220AB P 24100 27 0.0852SK2314

TO-220NIS P 28200 8.5 0.42SK2350

TO-220FL/SM P 2460 45 0.0172SK2376

TO-220NIS P 28200 5 0.82SK2381

TO-220NIS P 28200 15 0.182SK2382

TO-220NIS P 2460 36 0.032SK2385

TO-220NIS P 24100 20 0.085

2SK2391

2SK2398

P 24100 3 0.352SK2201 PW-Mold

60 5 0.16 P 242SK2231 PW-Mold

P 24TO-3P(N) 60 50 0.017

2SK2173

180 15.02SK2162 PW-Mold

100 3 0.35 P 242SK2200 TPS

P 245 0.16602SK2229 TPS

100 5 0.23 P 24

PW-Mold

2SK2399

π-MOS

L -π-MOS

π-MOS

L -π-MOS

100 5 0.23 P 24

TPS2SK2400

P 28

200 15 0.182SK2401 TO-220FL/SM

L -π-MOS

π-MOS



●

250 7.5 0.5 P 28TO-220NIS2SK2417

TO-3P(N) P 2460 50 0.018

TO-220NIS 100 30 0.046 P 26

180 9 0.8

2SK2445

2SK2466

2SK2467

U-MOS

TO-3P(N)IS

L -π-MOS

π-MOS

16 5 0.1 P 252SK2493 PW-Mold

π-MOS

50 25 0.046 P 242SK2507 TO-220NIS

250 13 0.25 P 282SK2508 TO-220NIS

π-MOS



TO-220NIS

TO-220AB

500 8 0.85 P 29

P 29600 6 1.25

2SK2543

2SK2544

π-MOS

500 8 0.85 P 292SK2542 TO-220AB

π-MOS

Power MOSFET Product List

Part

Number Series Package Type Part

Number Series Package Type

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

P 29400 10 0.55

2SK2949 TO-220FL/SM

P 28200 20 0.8

2SK2920 PW-Mold

P 29500 14 0.42SK2916 TO-3P(N)IS

P 29500 18 0.27

2SK2917 TO-3P(N)IS

π-MOS

TO-220NIS P 290.55400 8.5

2SK2952

P 29600 15 0.4

2SK2953 TO-3P(N)IS

π-MOS

900 10 1.25 P 29

2SK2968 π-MOS

60 55 5.8 P 26

2SK2986

TO-220NIS P 28200 11 0.26

2SK2965

TO-220FL/SM

P 2430 2 0.18

2SK2964 PW-Mini

P 28250 30 0.068

2SK2967 TO-3P(N)

TO-3P(N)

TO-220NIS P 2660 45 5.8

2SK2985 U-MOS

U-MOS

π-MOS

L -π-MOS

1 0.7100 P 24

2SK2963 PW-Mini

L -π-MOS

LSTM 60 2 0.27 P 24

2SK2961 L -π-MOS

LSTM 100 1 0.7 P 24

2SK2962 L -π-MOS

TPS

TO-3P(N)

TO-220NIS

TO-220AB

P 29600 6 1.25

P 24

P 28

P 29

16 2 0.29

50 45 0.03

50 50 0.011

250 13 0.25

500 10 1.0

500 2 3.2

600 6 1.25

P 31

800 3 3.6

800 5 2.2

2SK2545

2SK2549

2SK2550

2SK2551

2SK2598

2SK2599

2SK2601

2SK2602

2SK2603

2SK2604

TO-220FL/SM

PW-Mini

TO-3P(N)

L -π-MOS

π-MOS

π-MOS P 25

TO-3P(N)

PW-Mini

TO-220AB

TO-220NIS P 31

P 31

P 24

800 5 2.2

800 9 1.2

900 3 4.3

900 5 2.5

900 9 1.4

50 20 0.046

60 2 0.3

2SK2605

2SK2607

2SK2608

2SK2610

2SK2611

2SK2614

2SK2615

500 5

1.5

P 29

P 29TO-3P(N)

400 5.5 1.2

500 15 0.4

P 29

TO-220NIS

TO-220AB

900 5 2.5

P 29

2SK2661

2SK2662

2SK2679

2SK2698

TO-3P(N) 600 12 0.65 P 292SK2699

P 29900 3 4.3TO-220NIS2SK2700

2SK2717

L -π-MOS

π-MOS

TO-3P(N) P 321000 8 1.72SK2613 π-MOS

π-MOS

8.5 1.2800 P 312SK2606 TO-3P(N)IS

π-MOS

TO-3P(N) P 29

P 29TO-220AB

3 4.3900

900 1 9.0

2SK2719

2SK2733

π-MOS

P 29TO-220NIS 900 2.5 6.42SK2718 π-MOS

TO-3P(N) 50 50

0.0095

P 242SK2745

TO-3P(N) 50 45 0.02 P 242SK2744

L -π-MOS

TO-3P(N) P 31800 7 1.72SK2746 π-MOS

TO-220FL/SM 400 5.5 1.2 P 292SK2838

TO-220AB P 29400 10 0.552SK2841

TO-220NIS P 29500 12 0.522SK2842

TO-220NIS P 29600 10 0.752SK2843

TO-220AB P 2430 35 0.022SK2844

TO-3P(N)IS 900 8 1.4 P 31

2SK2847

TO-3P(N) P 31900 7 2.02SK2749

TO-220NIS P 29600 3.5 2.22SK2750

TO-220FL/SM P 29500 8 0.852SK2776

TO-220FL/SM P 24100 27 0.0852SK2789

TO-3P(N) P 290.27500 202SK2837

200 5 0.8 P 282SK2835 TPS

P 29600 2 5.02SK2865 PW-Mold

P 29600 2 5.0

2SK2846 TPS

π-MOS

L -π-MOS

π-MOS

TO-220FL/SM P 29600 6 1.252SK2777 π-MOS

DP P 2460 20 0.0552SK2782

L -π-MOS

π-MOS

600 10 0.752SK2866 TO-220AB

π-MOS

900 1 9.0 P 31

2SK2845 π-MOS

P 29

150 18 0.12

2SK2882 P 28

TO-220FL/SM 800 3 3.62SK2883 π-MOS P 31

P 29

500 3 3.22SK2862 TO-220NIS

TO-220NIS

π-MOS

TO-220NIS P 2450 45 0.022SK2886

800 5 2.2

2SK2884 TO-220FL/SM

π-MOS P 31

L -π-MOS

TO-220AB P 28

250 7.5 0.52SK2914

2SK2889 P 29

600 10 0.75TO-220FL/SM

P 29600 16 0.4

2SK2915 TO-3P(N)

π-MOS

LSTM 50 5 0.15 P 22

2SK2989 L -π-MOS

P 2660 70 5.8

2SK2987

P 29500 5 1.5

2SK2991 TO-220FL/SM

TO-3P(N)

U-MOS

π-MOS

TO-220FL/SM P 28250 20 0.105

2SK2993

TO-220FL/SM P 2450 45 0.03

2SK3051

PW-Mini P 28200 1 3.5

2SK2992

P 29500 0.5 18

2SK2998 LSTM

L -π-MOS

π-MOS

900 8.5 1.25 P 31

2SK3017 π-MOS

TO-220NIS P 29600 10 1.0

2SK2996

P 28250 30 0.068

2SK2995 TO-3P(N)IS

TO-3P(N)IS

π-MOS

P 29600 2 5.0

2SK3067 TO-220NIS

π-MOS

Part

Number Series Package Type Part

Number Series Package Type

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

TO-3P(N) 50 60 0.007

2SK3129

TO-220FL/SM P 29500 12 0.52

2SK3068 π-MOS

TO-220FL/SM P 26100 30 0.046

2SK3084 U-MOS

TO-220FL/SM P 24

P 24

TO-220FL/SM

40 0.0330

30 45 0.02

30 45 0.012 P 24

2SK3089

2SK3090

2SK3127

TO-3P(SM) 30 70 0.007 P 24

2SK3125

TO-220FL/SM

TO-3P(N) P 2430 60 0.0122SK3128

TO-3P(SM) P 29500 20 0.27

2SK3117

P 29600 3.5 2.2

2SK3085 TO-220AB

P 29450 10 0.65

2SK3126 TO-220NIS

L -π-MOS

π-MOS

P 28200 30 0.052

2SK3176 TO-3P(N)

TO-220NIS P 301.55600 6

2SK3130

P 29500 50 0.095

2SK3132 TO-3P(L)

P 30500 50 0.11

2SK3131 TO-3P(L)

π-MOS

P 2660 35 0.02

2SK3236

TO-220FL/SM 450 10 0.65 P 30

2SK3309

TO-220NIS

150 5 0.5

2SK3205 PW-Mold

700 10 1.0 P 29

2SK3265

MACH

500 0.5 18 P 29

2SK3302 π-MOS

PW-Mold

TPS

900 120 P 31

2SK3301

π-MOS

2SK3316 P 30500 5 1.8

TO-220NIS

TO-220NIS 450 10 0.65 P 30

P 30

2SK3310 MACH

π-MOS P 30500 12 0.62

2SK3313 TO-220NIS

π-MOS 600 6 1.25

2SK3312 TO-220FL/SM

π-MOS

2SK3314 P 30500 15 0.49

TO-3P(N)

π-MOS

2SK3342 P 28250 4.5 1.0

PW-Mold

π-MOS

2SK3371 P 29600 1 9.0

PW-Mold

P 28



π-MOS

2SK3373 500 23.2

PW-Mold

π-MOS

2SK3374 450 14.6

TPS



π-MOS

TFP 60 50 0.008 P 18

2SK3440

TFP 60 75 0.0058

2SK3441

TFP 250 20 0.105

2SK3445

TFP 200 25 0.082

2SK3444

TFP 150 30 0.055 P 18

2SK3443

TFP 100 45 0.02 P 18

2SK3442

P 18

U-MOS



π-MOS

TFP 400 10 0.55 P 18

2SK3499

π-MOS TFP 500 8 0.85 P 18

2SK3538

π-MOS 450 2 2.45

2SK3543

π-MOS TFP 450 13 0.4 P 18

P 18

2SK3544

TFP 500 51.5 P 16

2SK3466

TO-3P(N)IS 700 10 1.02SK3453 P 29

TO-3P(N)

30 45 0.02

2SK3506

2SK3462 P 28

250 31.7PW-Mold

2SK3471 P 29

500 0.5 18PW-Mini

2SK3472 P 29450 1 4.6PW-Mold

2SK3498 P 29

400 15.5PW-Mold

2SK3561 P 22500 8 0.85TO-220SIS

π-MOS

2SK3562 P 22600 6 1.25TO-220SIS

π-MOS

2SK3563 P 22500 5 1.5TO-220SIS

π-MOS

2SK3497 180 10 0.15

π-MOS

900 9 1.62SK3473 P 31

π-MOS

TO-220SIS 900 3 4.3

2SK3564 P 22

π-MOS

TO-220SIS 900 5 2.5

2SK3565 P 22

π-MOS

TO-220SIS 900 2.5 6.4

2SK3566 P 22

π-MOS

TO-220SIS 600 3.5 2.2

2SK3567 P 22

π-MOS

TO-220SIS 500 12 0.52

2SK3568 P 22

π-MOS

TO-220SIS 600 10 0.75

2SK3569 P 22

π-MOS



P 28

U-MOS

2SK3388 P 18

250 20 0.105

TFP

2SK3387 P 18

150 18 0.012

TFP

2SK3389 P 18

30 75 0.005

TFP

2SK3397 P 18

30 70 0.006

TFP

2SK3399 P 30

600 10 0.75

TO-220FL/SM

MACH

π-MOS

2SK3403 P 30

450 13 0.4

TO-220FL/SM

MACH

2SK3407 450 10 0.65

TO-220NIS

π-MOS

2SK3417 P 30500 5 1.8

TO-220FL/SM

π-MOS

2SK3398 P 18

500 12 0.52

TFP

π-MOS

U-MOS

L -π-MOS



P 30600 10 1.0

2SK3437 TO-220FL/SM

MACH

P 18600 10 1.0

2SK3438 TFP

π-MOS

TFP 30 75 0.005 P 18

2SK3439 U-MOS

U-MOS

TO-3P(N) 800 7 1.3

2SK3633 P 31

TO-220SIS

LSTM

600 7.5 1.0

2SK3667 P 22

π-MOS

TO-220SIS 900 3.5 3.5

2SK3798 P 22

π-MOS

TO-220SIS 900 5 2.5

2SK3742 P 22

π-MOS

TO-220SIS 900 9 1.5

2SK3799 P 22

π-MOS

TO-220NIS 60 35 0.0095

2SK3662 P 26

π-MOS

150 0.67 1.7

2SK3670 π-MOS

PW-Mold 100 10 0.125

2SK3669 P 27

π-MOS



TFP 60 75 0.0058

2SK3842

P 22TO-220SIS 450 2 2.45

2SK3757

π-MOS P 22TO-220SIS 600 2 4.5

2SK3767

π-MOS P 22TO-220SIS 600 13 0.49

2SK3797

P 17

VS-6 20 60.03

TPC6001 U-MOS

P 17

VS-6 30 60.03

TPC6002 U-MOS

Power MOSFET Product List

Part

Number Series Package Type Part

Number Series Package Type

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

DS(ON)

max

(Ω)

Page

Main Characteristics

DSS

(V) I

(A)

P 17

U-MOS

VS-6

SOP-8

– 30

– 20

– 4.5

– 2.7

2.5

1.8

– 5

– 7

– 13

– 11

– 10

– 4.5

0.024

0.028

0.06

0.035

0.04

0.11

0.095

0.007

0.05

0.016

0.4

0.014

0.008

0.0057

0.0066

0.0046

0.0065

0.04

0.0007

0.0013

0.02

0.025

0.012

0.006

0.01

0.0045

0.021

0.05

TPC6003

TPC6004

TPC6005

TPC6101

TPC6102

U-MOS

P 14

– 12

– 20

200

– 30

U-MOS

High-speed

U-MOS

High-speed

U-MOS

High-speed

U-MOS

High-speed

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

High-speed

U-MOS

High-speed

U-MOS

π-MOS

– 40 – 8

– 11

– 13

– 11

– 18

U-MOS

TPC8207 P 1420 6 0.02SOP-8

U-MOS

– 20

– 30

– 20

– 30

– 20

– 30/30

– 5

– 4.5/6

0.03

55/33

SOP-8

TPC8208 P 1420 5 0.05SOP-8

P 14

P 15

P 12

P 17

P 14

200 1.3

– 6

– 11

– 5

0.8

0.025

0.02

0.012

0.017

0.045

0.017

0.03

0.024

TSSOP-8

π-MOS

30/30 6/8.5

0.025/0.018

TPC8A01

P 13

U-MOS

SOP Advance 30 35 0.0066

TPCA8003-H

P 13

SOP Advance 30 40 0.0046

TPCA8004-H

P 13

SOP Advance 30 27 0.009

TPCA8005-H

SOP Advance – 30 – 40 0.007

TPCA8101 U-MOS

SOP Advance – 30 – 40 0.006

TPCA8102 U-MOS

P 13

SOP Advance – 30 – 40 0.0042

TPCA8103

U-MOS

VS-8 30 7 0.0025

0.0035

TPCF8001 U-MOS

P 17

VS-8 – 12 – 6 0.028

TPCF8101 U-MOS

P 17

VS-8 – 20 – 6 0.03

TPCF8102 U-MOS

P 17

VS-8 – 20 – 2.7 0.11

TPCF8103 U-MOS

P 17

VS-8 – 20 – 2.7 0.11

TPCF8301 U-MOS

P 17

VS-8 – 20 – 3 0.0059

TPCF8302 U-MOS

P 17

VS-8 – 20 – 3 0.0059

TPCF8303 U-MOS

P 17

VS-8 – 30/30

– 3.2/4

0.11/0.049

TPCF8402 U-MOS

P 17

VS-8 20 3 0.049

TPCF8A01 U-MOS

P 17

VS-8 – 20 – 2.7 0.11

TPCF8B01 U-MOS

P 17

PS-8 30 4.2 0.05

TPCP8201 U-MOS

P 17

PS-8 – 30/30

– 3.4/4.2

0.048/0.072

TPCP8401 U-MOS

P 17

PS-8 – 12/20

– 5.5/0.1

0.038/3

TPCP8402 U-MOS

P 17

PS-8 – 32/50

– 6/0.1

0.035

TPCP8J01

P 17

VS-8 – 30 – 6 0.0028

TPCF8104 U-MOS

P 17

VS-8 20 3 0.049

TPCF8201 U-MOS

TPC6103

TPC6104

TPC6105

TPC6201

TPC8003

SOP-8 7 0.02 P 1430

TPC8001

TPC8004

TPC8010-H

SOP-8 7 0.027 P 1430

TPC8006-H

TPC8012-H

TPC8014

TPC8015-H

TPC8016-H

TPC8017-H

TPC8018-H

SOP-8 13 0.009 P 1430

TPC8020-H

TPC8104-H

TPC8105-H

TPC8107

TPC8108

TPC8109

TPC8305

TPC8403

TPCS8004

P 15250 1.1 1TSSOP-8

π-MOS

TPCS8006

P 15200 1.9 0.5TSSOP-8

π-MOS

TPCS8007

P 15250 1.8 0.55TSSOP-8

π-MOS

TPCS8008

TPCS8101

TPCS8102

TPCS8104

– 30 P 15– 11 0.0135TSSOP-8

U-MOS

TPCS8105

– 20 P 15– 5 0.021TSSOP-8

U-MOS

TPCS8303

TPCS8204

TPCS8205

TPCS8208

TPCS8209

TPCS8210

TPCS8211

TPCS8212

TPCS8302

TPC8110

TPC8111

TPC8112

TPC8113

TPC8114

SOP-8 0.01 P 14– 20 – 10

U-MOS

TPC8115

TPC8203

TPC8206

– 30

TPC8210 P 1430 8 0.015SOP-8

U-MOS

TPC8211 P 1430 5.5

– 4.5

0.036

0.035

SOP-8

TPC8209 P 14

P 14

30 5 0.04SOP-8U-MOS

TPC8303

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

– 30/30

– 4.5/6

– 4.5/5

35/21

35/50

SOP-8

SOP-8 P 14

P 14

TPC8401

TPC8402

Power MOSFET Superseded Products

Part Number V

DSS

(V) I

(A) R

DS(ON)

max(Ω)V

DSS

(V) I

(A) R

DS(ON)

max(Ω)

Superseded Products

Part Number

Package Type Package Type

Superseded Products

Electrical Characteristics Electrical Characteristics

The product number in the left-hand column below are soon to be superseded. When ordering, please

choose from among the recommended products in the right-hand column.

2SK2057

2SK2235

2SK2741

2SK2742

2SK2836

2SK2839

2SK2985

2SK2986

2SK2987

TPC8005-H

TPC8102

TPC8201

TPC8204

TPCS8201

TPCS8206

TPC8202

TPC8106-H

TPC8007-H

TPCS8203

TPC8103

TPC8002

TPC8207

500

250

100

600

– 30

– 6

-8

– 11

0.34

0.16

0.35

0.04

0.0058

0.016

0.04

0.05

0.02

0.03

0.05

0.02

0.017

0.045

0.013

0.014

0.024

2SK2837

2SK3462

2SK2231

2SK2201

2SK3371

TPCF8001

2SK3844

2SK3845

TPC8010-H

TPC8105-H

TPC8209

TPC8207

TPCS8209

TPCS8210

TPC8208

TPC8109

TPC8009-H

TPCS8211

TPC8108

TPC8014

TPCS8212

500

250

100

600

– 30

– 7

– 10

– 11

0.27

1.7

0.16

0.35

0.023

0.0058

0.016

0.04

0.05

0.02

0.03

0.05

0.02

0.01

0.024

0.013

0.014

0.024

TO-3P(N)

PW-Mold

TO-220NIS

TO-220FL/SM

TO-3P(N)

SOP-8

TSSOP-8

SOP-8

TSSOP-8

SOP-8

TSSOP-8

TO-3P(N)

PW-Mold

VS-8

TO-220NIS

TO-3P(N)

SOP-8

TSSOP-8

SOP-8

TSSOP-8

SOP-8

TSSOP-8

★

★: Under development

Power MOSFET Final-Phase and Discontinued Products

Part Number Recommended

Replacement Products Part Number Recommended

Replacement Products

(1) Final-Phase Products

TPC8005-H

TPC8007-H

TPC8102

TPC8103

TPC8106-H

TPC8201

TPC8202

TPC8204

TPCS8201

TPCS8203

TPCS8206

TPCS8207

TPC8010-H

TPC8009-H

TPC8105-H

TPC8111/TPC8108

TPC8109

TPC8209

TPC8208

TPC8207

TPCS8209

TPCS8211

TPCS8210

TPCS8212

2SJ147

2SJ1347

2SK794

2SK1349

2SK1488

2SK1652

2SK1720

2SK1854

2SK1856

2SK1864

2SK1882

2SK1915

2SK1997

2SK1998

2SK2387

2SJ304

2SK2314

2SK2610

2SK2391

2SK2601

2SK2698

2SK2266

2SK2952

2SK2698

2SK2776

2SK2232

2SK2777

2SK2385

2SK2233

2SK2542

(2) Discontinued Products

2SJ91

2SJ92

2SJ123

2SJ124

2SJ126

2SJ183

2SJ224

2SJ238

2SJ239

2SJ240

2SJ241

2SJ315

2SK271

2SK272

2SK324

2SK325

2SK355

2SK356

2SK357

2SK358

2SK385

2SK386

2SK387

2SK388

2SK405

2SK417

2SK418

2SK419

2SK420

2SK421

2SK422

2SK442

2SK447

2SK525

2SK526

2SK527

2SK528

2SK529

2SK530

2SK531

2SK532

2SK537

2SK538

2SK539

2SK568

2SK572

2SK573

2SK578

2SK643

2SK644

2SK672

2SK673

2SK674

2SK678

2SK693

2SK694

2SK708

2SJ200

2SJ304

2SJ377

2SJ312

2SJ360

2SJ377

2SJ349

2SJ401

2SJ377

2SK1529

2SK2698

2SK387

2SK388

2SK2381

2SK2417

2SK2698

2SK2882

2SK2508

2SK1529

2SK2232

2SK2662

2SK2961

2SK2232

2SK2508

2SK2382

2SK2417

2SK2232

2SK2662

2SK2232

2SK2733

2SK2719

2SK2610

–

2SK1641

2SK2882

2SK2601

2SK2232

2SK2698

2SK788

2SK789

2SK790

2SK791

2SK792

2SK793

2SK849

2SK850

2SK851

2SK856

2SK857

2SK858

2SK888

2SK889

2SK890

2SK891

2SK892

2SK893

2SK894

2SK895

2SK896

2SK942

2SK943

2SK944

2SK945

2SK1029

2SK1078

2SK1112

2SK1113

2SK1114

2SK1115

2SK1116

2SK1117

2SK1118

2SK1124

2SK1213

2SK1251

2SK1252

2SK1333

2SK1344

2SK1346

2SK1348

2SK1350

2SK1351

2SK1352

2SK1356

2SK1357

2SK1358

2SK1362

2SK1363

2SK1377

2SK1378

2SK1379

2SK1380

2SK1487

2SK1513

2SK1531

2SK2698

2SK2608

2SK2610

2SK2233

2SK2466

2SK2967

2SK2385

2SK2233

2SK2750

2SK2350

2SK2314

2SK2350

2SK2382

2SK2662

2SK2386

2SK2542

2SK2601

2SK2695

2SK2232

2SK2967

2SK2599

2SK2698

2SK2615

2SK2231

2SK2201

2SK2232

2SK2544

2SK2545

2SK2233

2SK2602

2SK2231

2SK2201

2SK2698

2SK2232

2SK2391

2SK2382

2SK2662

2SK2543

2SK2700

2SK2610

2SK2611

2SK2610

2SK2847

2SK2679

2SK2841

2SK2173

2SK2267

2SK2601

2SK2698

2SK1542

2SK1574

2SK1600

2SK1601

2SK1602

2SK1603

2SK1641

2SK1642

2SK1643

2SK1649

2SK1650

2SK1651

2SK1653

2SK1692

2SK1717

2SK1719

2SK1721

2SK1722

2SK1723

2SK1745

2SK1746

2SK1766

2SK1767

2SK1768

2SK1769

2SK1792

2SK1805

2SK1855

2SK1858

2SK1865

2SK1879

2SK1913

2SK1927

2SK1928

2SK1929

2SK2030

2SK2038

2SK2039

2SK2056

2SK2077

2SK2078

2SK2088

2SK2089

2SK2107

2SK2149

2SK2150

2SK2222

2SK2236

2SK2237

2SK2319

2SK2320

2SK2351

2SK2352

2SK2386

2SK2388

2SK2402

2SK2376

2SK2542

2SK2603

2SK2608

2SK2603

2SK2718

2SK2993

2SK2952

2SK2717

2SK2610

2SK2719

2SK2601

2SK2312

2SK2749

2SK2615

2SK2231

2SK2991

2SK2699

2SK2837

2SK2865

2SK2417

2SK2750

2SK2614

2SK2599

2SK2376

2SK2543

2SK2698

2SK2883

2SK2776

2SK2398

2SK2750

2SK2789

2SK2884

2SK2231

2SK2604

2SK2610

2SK2605

2SK2746

2SK2607

2SK2401

2SK2884

2SK2401

2SK2601

2SK2698

2SK2604

2SK2662

2SK2543

2SK2746

2SK2607

2SK2544

2SK2545

2SK2661

2SK2750

Part Number Recommended

Replacement Products Part Number Recommended

Replacement Products

Package List

1. Compact Surface-Mount Packages

To meet requirements for compact and

thin equipment, Toshiba offers various

packages with power dissipation of 1.0 to

150 W and drain current of 1 to 50 A.

In addition, we offer devices housed in

the SOP-8 and TSSOP-8 packages. These

devices consist of input/output isolated

TFP Series MOSFETs and trench

MOSFETs with ultra-low ON-resistance.

Drain Current I

(A)

0.1

1.0

100

10 100 10001.0 Power Dissipation PD (W)

TO-3P

(SM)

TO-220

(SM)

PW-MOLD

TSSOP-8

PW-MINI

SOP-8

SOP

Advance

TFP

VS-6

PS-8

VS-8

NEW

5.0 11.4

9.0

ø180

ø60

5.0 11.4

9.0

ø180

ø60

■ VS-6

■ VS-8

Unit: mm

4000pcs / reel

Unit: mm

3000pcs / reel

Packing quantity

0.05

2.9 ± 0.2

0.7 ± 0.05

0.16 ± 0.05

0.05 ± 0.05 +0.2

1.6

0.1

0.3 ± 0.1

+0.2

2.8

0.3

+0.25

0.25

0.15

0.95 13

0.65

1.9 ± 0.1

1.5 ± 0.1

0.05

0.025

0.475

2.9

0.1

0.3+0.1/ -0.05

0.24+0.10

-0.09

0.71+0.05

-0.15 0.71+0.05

-0.15

0.8 ± 0.05

Tape dimensions

8.0 ± 0.2

5.2 ± 0.2

3.3 ± 0.1

4.0 ± 0.1

2.0 ± 0.08

4.0 ± 0.1 1.55 ± 0.1

0.3 ± 0.05

1.4 ± 0.1

3.5 ± 0.1

ø1.1 ± 0.1

1.75 ± 0.1

2.75

+0.1

ø1.5

0.0

BB'

3.05 ± 0.1

Reel dimensions

Packing quantity

Tape dimensions

Reel dimensions

8.0 ± 0.2

1.9 ± 0.1

2.0

3.5

0.1

1.75

0.1

2.75

ø1.1 ± 0.1

+0.1

ø1.5

0.0

4.0 ± 0.1

2.0

0.1

3.1 ± 0.1

0.95 ± 0.1

0.2 ± 0.05

■ PS-8

■ TSSOP-8

5.0 11.4

9.0

ø180

ø60

+0.1

ø1.50

0.0

ø1.1 ± 0 . 1

1.75 ± 0 . 1

0.2 ± 0.05

0.95 ± 0.05

3.1 ± 0.1

4.0 ± 0.1

5.5 ± 0.2

8.0 ± 0.2

1.15 ± 0.05

2.0 ± 0.05

4.0 ± 0.1

3.1 ± 0.1

2.75

Unit: mm

3000pcs / reel

0.65

2.8

0.1

2.4

0.1

0.025

0.05 A

0.475

2.9

0.1

0.33

0.05

0.28

+0.10

-0.11

0.28

+0.10

-0.11

1.12

+0.13

-0.12

1.12

+0.13

-0.12

0.8

0.05

0.17

0.02

0.05 B

0.33

0.05

Unit: mm

3000pcs / reel

3.0 ± 0.1

0.85 ± 0.05 4.4 ± 0.1

0.25 ± 0.05

6.4 ± 0.3

3.3 max

0.05 ± 0.05

0.16+

0.04

0.02

0.6 ± 0.2

0.65

(0.525)

0.05

4.0 ± 0.1 2.0 ± 0.05

8.0 ± 0.1

1.55 ± 0.05 1.1 ± 0.1

0.3 ± 0.05

12.0 ± 0.2

1.75 ± 0.15.5 ± 0.05

(4.75)

3.5 ± 0.1

3.7 ± 0.2

0.05

1.1 ± 0.1

0.3

6.9

0.2

6.6

0.1

3.5 ± 0.2

1.5

0.4

ø330

ø100

13.5

0.5

R135

120

18.5 (max)

2.0

0.5

R10

ø13 ± 0.2

ø1.55 ± 0.05

4.0

0.5

Packing quantity

Tape dimensions

Reel dimensions

Packing quantity

Tape dimensions

Reel dimensions

Package List

■ SOP-8

■ SOP Advance

Unit: mm

3000pcs / reel

Unit: mm

3000pcs / reel

5.5 max

5.0 ± 0.2

0.5 ± 0.2

0.4 ± 0.1 0.25

1.27 M

0.595

1.5 ± 0.2

0.1

+0.1

0.05

+0.1

0.05

0.15 6.0 ± 0.3

4.4 ± 0.2

0.1

1.27

850.05

0.4 ± 0.1

0.15 ± 0.05

5.0 ± 0.2

0.595

0.5 ± 0.1

6.0 ± 0.3

0.95 ± 0.05

0.166 ± 0.05

1.1 ± 0.23.5 ± 0.2

5.0 ± 0.2

0.8 ± 0.1

4.25 ± 0.2

0.6 ± 0.1

0.05 S

0.3 ± 0.05

5.5 ± 0.1

12.0 ± 0.2 1.75 ± 0.1

4.0 ± 0.1

8.0 ± 0.1

0.5

1.2 ± 0.1

2.0 2.0

6.4 ± 0.1

6.6

ø1.55 ± 0.05

ø1.7 ± 0.1

9.3 ± 0.1

(4.75)

5.8

5.6 ± 0.1

ø330 ± 2

ø100 ± 1

13.5 ± 0.5

R135

120º ± 318.5 (max)

2.0

0.5

R10

ø13

0.2

4.0

0.5

5.3 ± 0.1

4.0 ± 0.1

8.0 ± 0.1 2.55 ± 0.1

12.0 ± 0.2

5.5 ± 0.1 1.75 ± 0.1(4.75)

9.3 ± 0.1

0.3 ± 0.05

0.5

2.0 2.0

6.8

ø1.55 ± 0.05

5.6

ø330

ø100

13.5

0.5

R135

120

18.5 (max)

2.0

0.5

R10

ø13 ± 0.2

4.0

0.5

6.5 ± 0.1

3 0.5

2 ± 0.5

Packing quantity

Tape dimensions

Reel dimensions

Packing quantity

Tape dimensions

Reel dimensions

■ DP

Unit: mm

1. Gate

2. Drain (heat sink)

3. Source

■ PW-Mini

Unit: mm

1000pcs / reel

1.5 ± 0.1 1.5 ± 0.1

0.4

0.05

+ 0.08

+ 0.08 0.4

0.05

+ 0.08

0.45

0.05

0.8 min

12 3

1.7 max

4.6 max 1.6 max

0.4 ± 0.05

2.5 ± 0.1

4.2 max

1. Gate

2. Drain (heat sink)

3. Source

2000pcs / reel

16.0 ± 0.3

7.5 ± 0.1 1.75 ± 0.16.75

0.3 ± 0.05

2.7 ± 0.1

10.1 ± 0.2

4.0 ± 0.1

2.0 ± 0.1

6.8 ± 0.1

8.0 ± 0.1

ø13 ± 0.5

17.5

1.5

ø80 ± 1

ø330 ± 2

0.52

0.5

ø1.5 +0.1

-0 ø3.0 ± 0.05

120 ± 3

120

± 2

2 ± 0.5

3 0.5

0.5

± 0.5

0.5

2 ± 0.5

1.1 ± 0.2

9.5

ø178 ± 1.0

ø75 ± 0.5

120°

ø 13 ± 0.2

0.9 +0.2

-0.0

2.0 2.0

12.0 ± 0.3

4.9 ± 0.2

8.0 ± 0.1 1.65 ± 0.1

1.8 ± 0.1

4.0 ± 0.1

2.3

5.1 ± 0.2

4.5 ± 0.2

4.7 ± 0.2

0.9

5.65 ± 0.05 1.5 ± 0.14.85

0.3 ± 0.05

9.5

0.5

2 ± 0.15

ø1.5 +0.1

-0

75 41.5

41.5

123

0.6 max

2.0 max

6.8 max

0.95 max

2.5

0.6 max

2.5 max

0.6 ± 0.15

5.5 ± 0.2

5.2 ± 0.2

1.1 ± 0.2

0.1 ± 0.1

1.5 ± 0.2

0.9

2.3 2.3

Packing quantity

Tape dimensions

Reel dimensions

Packing quantity

Tape dimensions

Reel dimensions

Package List

■ New PW-Mold

■ TO-220SM

Unit: mm

2000pcs / reel

1. Gate

2. Drain (heat sink)

3. Source

6.5 ± 0.2

5.2 ± 0.2

5.5 ± 0.2

1.2 max

0.1 ± 0.1

1.05 max

0.8 max 0.6 ± 0.15

0.6 max

1.1 ± 0.2

0.6 max

123

2.3 ± 0.15 2.3 ± 0.15

1.5 ± 0.2

2.3 ± 0.2

2.5 ± 0.2

1000pcs / reel

1. Gate

2. Drain (heat sink)

3. Source

10.3 max

0.76

10.6 max

9.1

0.5

2.54 ± 0.25 2.54 ± 0.25

1.32

1.5

0.1

1.50.6

4.7 max

0.1 1.32

3 ± 0.2

2.6

123

16.0 ± 0.3

7.5 ± 0.1 1.75 ± 0.16.75

0.3 ± 0.05

2.7 ± 0.1

10.1 ± 0.2

4.0 ± 0.1

2.0 ± 0.1

6.8 ± 0.1

8.0 ± 0.1

ø1.5 +0.1

-0 ø3.0 ± 0.05

ø13 ± 0.5

17.5

1.5

ø80 ± 2

ø330 ± 2

0.52

0.5

120 ± 3

120

± 2

2 ± 0.5

0.5

± 0.5

0.5

2 ± 0.5

21.5

12.0

0.1

10.8

0.1

4.0 ± 0.1

24.0

0.3

10.75

11.5 ± 0.1 1.75 ± 0.1

5.2

0.1

13.9

0.1

0.4 ± 0.05

2.0 ± 0.1 ø1.5 +0.1

-0

ø2.0 ± 0.1

ø330 ± 2

ø100 ± 1

25.4 ± 2

2 ± 0.5

R135

120 ± 3

2.0

0.5

6.5

ø13

0.5

4.0 ± 0.5

Packing quantity

Tape dimensions

Reel dimensions

Packing quantity

Tape dimensions

Reel dimensions

■ TFP

Unit: mm

1500pcs / reel

1. Drain (heat sink)

2. Gate

3. Source1

4. Source2

9.2 max

9.2 max 0.8 max0.7 max

0.2 1.5 2.0 2.5

7.0 ± 0.2 0.4 ± 0.1

3.0 max

0.4 ± 0.1

1.0 ± 0.2 1.0 ± 0.2

3.6 ± 0.2

2 ± 0.5

4.0 ± 0.5

4.0 ± 0.1 0.30 ± 0.05

3.0 ± 0.1

12.0 ± 0.1 2.0 ± 0.1 ø1.5 ± 0.1

ø2.0 ± 0.1

21.5 ± 0.3

24.0 ± 0.3

11.5 ± 0.1 1.75 ± 0.1

9.5 ± 0.1

10.5 ± 0.1

ø330 ± 2

ø80 ± 1

25.5 ± 2

2 ± 0.5

R135

120 ± 3

ø13

0.5

4.0 ± 0.5

Packing quantity

Tape dimensions

Reel dimensions

Package List

■ LSTM ■ PW-Mold

(Straight)

■ DP

(Straight)

■ TO-220AB

■ TPS

Unit: mm

2. Through-Hole Package

8.0 ± 0.2

7.0 ± 0.2

1.4 ± 0.1

1.05 ± 0.1

0.5 + 0.15

0.05

0.5 + 0.15

0.05

0.5

13.5 min

123

1.5

2.5 ± 0.5 2.5 ± 0.5

3.5 ± 0.2

1.3

12.6 min

4.7 max

2.54 ± 0.25

1.6 max

0.76

10.3 max

2.5 max

ø3.6 ± 0.2

6.7 max

3.0

15.7 max

1.32

0.5

2.6

6.8 max

5.2 ± 0.2

1.1 ± 0.2

0.6 ± 0.15

0.6 max

2.3 2.3

0.95 max

2.0 max

12.0 min

2.5 max

5.1 max

2.2 max

8.2 max

10.5 min

0.6 max

4.1 max

1.27 1.27

0.75 max

1.0

1.0 max

0.8 max

0.6 max

2.54

123

6.8 max

5.2 ± 0.2

5.5 ± 0.2

0.6 ± 0.15

0.6 max

123

2.3 2.3

0.95 max

2.0 max

12.0 min

1.1 ± 0.2

2.5 max

123

1. Source

2. Drain

3. Gate

1. Gate

2. Drain (Heat Sink)

3. Source

1. Gate

2. Drain (Heat Sink)

3. Source

1. Gate

2. Drain (Heat Sink)

3. Source

1. Source

2. Drain

3. Gate

■ TO-220NIS ■ TO-220SIS

■ TO-220FL

■ TO-3P(N)IS ■ TO-3P(L)

■ TO-3P(N)

Unit: mm

123

5.45 ± 0.2

2.0 ± 0.3

3.2 ± 0.2

20.0 ± 0.3

5.45 ± 0.2

+ 0.3

0.25

0.1

1.0

3.3 max

2.0

1.0

4.5

9.0

15.9 max

0.6

2.8

1.8 max

4.8 max 20.5 ± 0.5

123

5.45 ± 0.2

2.0

3.6 ± 0.2

15.8 ± 0.5

21.0 ± 0.5

19.4 max

5.45 ± 0.2

5.0 ± 0.3

+ 0.25

0.15

0.15 3.6 max

5.5

15.5

1.0

+ 0.2

0.1

3.15

3.5

0.6

10 ± 0.3 2.7 ± 0.2

0.75 ± 0.15

2.54 ± 0.25 2.54 ± 0.25

ø 3.2 ± 0.2

15 ± 0.3

0.75 ± 0.15

2.6

4.5 ± 0.2

13.0 min

5.6 max

3.03.9

123

1.1

10.3 max

1.6 max

0.76

10.6 max

9.1

2.5 max

12.6 min

4.7 max

1.32

0.5

2.54 ± 0.252.54 ± 0.25

2.6

1.32

12 3

1. Gate

2. Drain (Heat Sink)

3. Source

1. Gate

2. Drain

3. Source

10 ± 0.3 2.7 ± 0.2

0.69 ± 0.15

2.54 2.54

ø 3.2 ± 0.2

15 ± 0.3

0.64 ± 0.15

2.6 ± 0.1

4.5 ± 0.2

13 ± 0.5

2.8 max 3.03.9

123

1.14 ± 0.15

1. Gate

2. Drain

3. Source

1. Gate

2. Drain (Heat Sink)

3. Source

1. Gate

2. Drain

3. Source

20.5 max ø 3.3 ± 0.2

5.45 ± 0.15 5.45 ± 0.15

26.0 ± 0.520.0 ± 0.6

0.10

+ 0.25

0.25

+ 0.3

6.0

11.0

2.0

2.5

3.0

1.0

2.50

5.2 max

2.8

0.6

123

1. Gate

2. Drain (Heat Sink)

3. Source

Power MOSFETs

2004-3

Previous edition: BCE0017A

2004-03(0.5k)PC-O

Printed in Japan

The information contained herein is subject to change without notice. 021023_D

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

021023_C

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a

safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to

property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products

specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc. 021023_A

The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment,

industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality

and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control

instruments, airplane or spaceship instr uments, transportation instr uments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety

devices, etc. Unintended Usage of Toshiba products listed in this document shall be made at the customer’s own risk. 021023_B

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030519_Q

BCE0017B

Website: http://www.semicon.toshiba.co.jp/eng

Semiconductor Company

(As of March 10, 2004)

OVERSEAS SUBSIDIARIES AND AFFILIATES

Toshiba America

Electronic Components, Inc.

Headquarters-Irvine, CA

9775 Toledo Way, Irvine, CA 92618, U.S.A.

Tel: (949)455-2000 Fax: (949)859-3963

Boulder, CO (Denver)

3100 Araphahoe #500,

Boulder, CO 80303, U.S.A.

Tel: (303)442-3801 Fax: (303)442-7216

Deerfield, IL (Chicago)

One Pkwy., North, #500, Deerfield,

IL 60015-2547, U.S.A.

Tel: (847)945-1500 Fax: (847)945-1044

Duluth, GA (Atlanta)

3700 Crestwood Pkwy, #160,

Duluth, GA 30096, U.S.A.

Tel: (770)931-3363 Fax: (770)931-7602

Beaverton/Portland, OR

8323 SW Cirrus Drive, Beaverton,

OR 97008, U.S.A.

Tel: (503)466-3721 Fax: (503)629-0827

Raleigh, NC

3120 Highwoods Blvd., #108, Raleigh,

NC 27604, U.S.A.

Tel: (919)859-2800 Fax: (919)859-2898

Richardson, TX (Dallas)

777 East Campbell Rd., #650, Richardson,

TX 75081, U.S.A.

Tel: (972)480-0470 Fax: (972)235-4114

San Jose Engineering Center, CA

1060 Rincon Circle, San Jose, CA 95131, U.S.A.

Tel: (408)526-2400 Fax:(408)526-8910

Wakefield, MA (Boston)

401 Edgewater Place, #360, Wakefield,

MA 01880-6229, U.S.A.

Tel: (781)224-0074 Fax: (781)224-1095

Toshiba do Brasil, S.A.

Electronics Component Div.

Rua Afonso Celso,55213 ardar,

Vila Mariana CEP 04119-002, S

a˜

o Paulo, Brasil

Tel: (011)5576-6619 Fax: (011)5576-6607

Toshiba India Private Ltd.

6F DR. Gopal Das Bhawan 28,

Barakhamba Road, New Delhi, 110001, India

Tel: (011)2371-4601 Fax: (011)2371-4603

Toshiba Electronics Europe GmbH

Düsseldorf Head Office

Hansaallee 181, D-40549 Düsseldorf,

Germany

Tel: (0211)5296-0 Fax: (0211)5296-400

München Office

Büro München Hofmannstrasse 52,

D-81379, München, Germany

Tel: (089)748595-0 Fax: (089)748595-42

France Branch

Les Jardins du Golf 6 rue de Rome 93561,

Rosny-Sous-Bois, Cedex, France

Tel: (1)48-12-48-12 Fax: (1)48-94-51-15

Italy Branch

Centro Direzionale Colleoni,

Palazzo Perseo 3,

I-20041 Agrate Brianza, (Milan), Italy

Tel: (039)68701 Fax: (039)6870205

Spain Branch

Parque Empresarial, San Fernando, Edificio Europa,

1a Planta, E-28831 Madrid, Spain

Tel: (91)660-6798 Fax:(91)660-6799

U.K. Branch

Riverside Way, Camberley Surrey,

GU15 3YA, U.K.

Tel: (01276)69-4600 Fax: (01276)69-4800

Sweden Branch

Gustavslundsvägen 18, 5th Floor,

S-167 15 Bromma, Sweden

Tel: (08)704-0900 Fax: (08)80-8459

Toshiba Electronics Asia

(Singapore) Pte. Ltd.

Singapore Head Office

438B Alexandra Road, #06-08/12 Alexandra

Technopark, Singapore 119968

Tel: (6278)5252 Fax: (6271)5155

Toshiba Electronics Service

(Thailand) Co., Ltd.

135 Moo 5, Bangkadi Industrial Park, Tivanon Road,

Pathumthani, 12000, Thailand

Tel: (02)501-1635 Fax: (02)501-1638

Toshiba Electronics Trading

(Malaysia)Sdn. Bhd.

Kuala Lumpur Head Office

Suite W1203, Wisma Consplant, No.2,

Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,

Selangor Darul Ehsan, Malaysia

Tel: (03)5631-6311 Fax: (03)5631-6307

Penang Office

Suite 13-1, 13th Floor, Menara Penang Garden,

42-A, Jalan Sultan Ahmad Shah,

10050 Penang, Malaysia

Tel: (04)226-8523 Fax: (04)226-8515

Toshiba Electronics Philippines, Inc.

26th Floor, Citibank Tower, Valero Street, Makati,

Manila, Philippines

Tel: (02)750-5510 Fax: (02)750-5511

Toshiba Electronics Asia, Ltd.

Hong Kong Head Office

Level 11, Tower 2, Grand Century

Place, No.193, Prince Edward Road West,

Mongkok, Kowloon, Hong Kong

Tel: 2375-6111 Fax: 2375-0969

Beijing Office

Room 714, Beijing Fortune Building,

No.5 Dong San Huan Bei-Lu, Chao Yang District,

Beijing, 100004, China

Tel: (010)6590-8796 Fax: (010)6590-8791

Chengdu Office

Suite 403A, Holiday Inn Crown Plaza 31, Zongfu Street,

Chengdu, 610016, Sichuan, China

Tel: (028)675-1773 Fax: (028)675-1065

Qingdao Office

Room B707, Full Hope Plaza,

12 Hong Kong Central Road, Qingdao,

Shandong, 266071, China

Tel: (0532)502-8105 Fax: (0532)502-8109

Toshiba Electronics Shenzhen Co., Ltd.

Room 2601-2609, 2616, Office Tower Shun Hing Square,

Di Wang Commercial Center, 5002 Shennan Road East,

Shenzhen, 518008, China

Tel: (0755)2583-0827 Fax: (0755)8246-1581

Toshiba Electronics Korea Corporation

Seoul Head Office

891, Sejong Securities Bldg. 20F, Daechi-dong,

Gangnam-gu, Seoul, 135-738, Korea

Tel: (02)3484-4334 Fax: (02)3484-4302

Gumi Office

6F, Goodmorning Securities Building,

56 Songjung-dong, Gumi-shi,

Kyeongbuk, 730-090, Korea

Tel: (054)456-7613 Fax: (054)456-7617

Toshiba Electronics (Shanghai) Co., Ltd.

11F, HSBC Tower, 101

Yin Cheng East Road, Pudong New Area, Shanghai,

200120, China

Tel: (021)6841-0666 Fax: (021)6841-5002

Hangzhou Office

9F Zhejiang San Rui Bldg. No. 36 QingChun Road,

Hangzhou 310004, China

Tel: (0571)8704-0255 Fax: (0571)8704-0200

Tsurong Xiamen Xiangyu Trading Co., Ltd.

14G, International Bank BLDG., No.8 Lujiang Road,

Xiamen, 361001, China

Tel: (0592)226-1398 Fax: (0592)226-1399

Toshiba Electronics Taiwan Corporation

Taipei Head Office

17F, Union Enter prise Plaza Building, 109

Min Sheng East Road, Section 3, Taipei,

105, Taiwan

Tel: (02)2514-9988 Fax: (02)2514-7892

Kaohsiung Office

16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road,

Kaohsiung, 800, Taiwan

Tel: (07)237-0826 Fax: (07)236-0046

2004

100% recycled paper