2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure ..........................................................4 3. TFP Series ...............................................................18 - 21 9. -MOSV Series (VDSS = 150 to 250 V) ............................28 7 Superseded Products ...................................................37 - 38 2 New Power MOSFET Products .............................................5 4. TO-220SIS -MOSIV/VI Series ..................................22 - 23 10. -MOSV Series (VDSS = 400 to 700 V) ...........................29 8 Final-Phase and Discontinued Products .............................38 - 39 3 Selection Guide ................................................................6 - 9 5. L --MOSV ......................................................................24 - 25 11. High-Speed -MOSV Series (VDSS = 450 to 600 V) .........30 9 Package List .................................................................40 - 47 4 Power MOSFET Characteristics 6. 2.5-V Drive -MOSV..............................................................25 12. -MOSIII/IV Series (VDSS = 800 to 1000 V)....................31 1. SOP Series ...............................................................10 - 15 7. U-MOSIII Series (Trench Type) .......................................26 5 Power MOSFET Modules ....................................................32 2. VS Series ..................................................................16 - 17 8. -MOSVII Series .............................................................27 6 Product List ...................................................................33 - 36 2 2 3 Features and Structure Power MOSFETs All power MOSFETs have the following features: 1) No carrier storage effect Superior frequency and switching characteristics 2) Rugged without current concentration 3) Low drive power due to voltage-controlling device 4) Easy parallel connection Toshiba Power MOSFETs have the following additional features: Drain Gate Protection zener diode Source 1) Guaranteed avalanche withstand capability No absorber circuit required 2) Improved the function of built-in diodes greatly expands the possibility of circuit design 3) High ruggedness enables to take better margin for circuit design 4) High-speed switching contributes to equipment's high-speed operation 5) Low R(DS)ON reduces power consumption of equipment 6) Downsized packages enable equipment's size to be compact and thin 7) Low drive loss reduces power consumption of equipment 8) Zener diode between gate and source Improved electrostatic withstand between gate and source Structure of Toshiba Power MOSFETs -MOS Toshiba Power MOSFETs use the double-diffusion MOS (D-MOS) structure, which produces a high-withstand voltage, to form channels. This structure is especially well suited to high-withstad voltage and high-current devices. A high level of integration yields a high-performance power MOSFET with low On-resistance and low power loss. Double-Diffusion Structure Source P Gate n+ n+ P nn+ Drain U-MOS Higher channel density is achieved by connecting channel vertically as having a U-groove at the gate region and this structure reduces On-resistance to lower than other MOSFET structures. This is an ideal for low-voltage power MOSFETs. Trench Structure Source Gate n+ n+ P P nn+ Drain 4 New Power MOSFET Products New Power MOSFET Products All products have a protection zener diode between gate and source. Avalanche withstand capability in single and series Power MOSFET products SOP Series VDSS = 20 V to 60 V VS and PS Series VDSS = 12 to 30 V SOP Series products are compact and thin, and require only a small mounting area. They are suitable for lithium-ion secondary battery protection circuits and for notebook PCs. VS Series and PS Series products are very compact and thin, and suitable for various items of portable electronic devices. Applica- Lithium-ion secondary battery protection circuits tions Notebook PCs Portable electronic devices Applica- Portable phones tions Notebook PCs Portable electronic devises TFP (Thin Flat Package) Series TO-220SIS Series VDSS = 450 to 900 V TFP (Thin Flat Package) Series is comprised of new highperformance devices with a 4-pin structure for separating input and output. TFP Series devices have the same ratings as existing TO-220SM package devices; however, the volume of them occupies only 42% of the volume of TO-220SM package devices. This series downsized 2.8-mm package height compared to the conventional package, TO220NIS. In addition, the chip design optimization, -MOS IV / VI Series housed in this new package, reduced Qg characteristics. Applica- DC-DC converters tions PDP drivers Motor drivers DC-DC converters Applica- Motor drives tions Switching power supplies AC adapters U-MOS III Series VDSS = 40 V to 100 V -MOS VII Series VDSS = 100 V High-integration is achieved using trench structure technique. Lowvoltage driving (VGS = 4 V) is possible because of ultra-low Onresistance. With employing submicron technology and reducing gate charge, this latest series realized extremely fast speed and low RDS(ON). Applica- DC-DC converters tions Motor drives Solenoids and lamp drives Applica- Digital amps tions DC-DC converters Motor drivers -MOS V Series VDSS = 150 V to 250 V -MOS V High-Speed Series VDSS = 250 V to 600 V The -MOS Series is comprised of low-cost devices which are ideal for use in monitors, especially for frequency control and S-shape correction. -MOS V High-Speed Series is new product series and achieves faster switching speed than -MOS V Series which are currently well-established in the marketplace. Two types of series are available: High-Speed Switching Series High-Speed Diode Series Applica- Monitors tions DC-DC converters PDP drives Inverters Applications Motor drives AC adapters Switching power supplies -MOS V Series VDSS = 400 V to 600 V -MOS III Series VDSS = 800 V to 900 V This Series is comprised of highly integrated, high-performance, high-breakdown-voltage and low-cost products with VDSS in the range 400 V to 600 V which are ideal for use in 100-V AC inputswitching power supplies. This Series is comprised of highly integrated, high-performance, high-breakdown-voltage and low-cost products with VDSS in the range 800 V to 900 V which are ideal for use in 200-V AC inputswitching power supplies. Applica- Switching power supplies tions AC adapters Lighting inverters Applica- Switching power supplies tions 5 Selection Guide VDSS(V) ID(A) 12 16 20 30 40 50 60 100 150 180 200 250 400 450 500 600 700 800 900 1000 2SK2998(20) 2SK3302(18) 2SK3471(18) 0.5 2SJ360(0.73) 2SJ507(0.7) 1 2SK2963(0.7) 2SK2962(0.7) 2SJ508(1.9) 2SJ509(1.9) 2SK3670(1.7) 2SJ313(5.0) 2SJ338(5.0) 2SK2013(5.0) 2SK2162(5.0) 1.3 1.5 1.8 2SK2992(3.5) 2SK3498(5.5) 2SK3472(4.6) 2SK3374(4.6) 2SK2836(9) 2SK3371(9) 2SK2733(9.0) 2SK2845(9) 2SK3301(20) 1 1.3 1.5 1.8 TPC8012-H(0.4) 2SK2964(0.18) 2SJ511(0.45) 2 2SJ610(2.55) 2SK2615(0.3) 2SK2961(0.3) 2SK3658(0.3) ID(A) 0.5 TPCS8004-H(0.8) # 2SJ465(0.71) # 2SK2549(0.29) VDSS(V) 2SK3543(2.45) 2SK3757(2.45) 2SK2599(3.2) 2SK3373(3.2) 2SK2846(5.0) 2SK2865(5.0) 2SK3067(5.0) 2SK3767(5.0) 2 2.3 2.3 2SJ567(2.0) N TPC6201(0.095) 2SK2718(6.4) 2SK3566(4.3) 2SK3762(6.4) 2.5 2.5 P# TPC6105(0.11) P TPCF8301(0.11) PS TPCF8B01(0.11) P TPCF8103(0.11) 2.7 2.7 2SK2200(0.35) 2SK2201(0.35) 2SK2742(0.35) N# TPCF8201(0.049) NS# TPCF8A01(0.049) P# TPCF8302(0.059) P TPCF8303(0.058) 3 3.2 3.4 2SK2862(3.2) 2SK3462(1.7) 2SK2603(3.6) 2SK2883(3.6) 2SK2608(4.3) 2SK2700(4.3) 2SK2719(4.3) 2SK3564(4.3) 2SK3763(4.3) 3 3.2 3.4 CP TPCF8402(0.077) CP TPCP8402(0.072) 2SK2750(2.2) 2SK3085(2.2) 2SK3567(2.2) P TPC8302(0.12) P TPC8301(0.12) 3.5 2SK3798(3.5) 3.5 2SK3760(2.2) CN TPCF8402(0.05) 4 NTPCP8201(0.05) CNTPCP8402(0.077) 4.2 P# TPC6101(0.06) P P CP CP CP 4.5 # 2SJ439(0.2) # 2SK2493(0.1) 5 5.5 6 2SK1119(3.8) 2SK1930(3.8) 4.2 2SK3342(1.0) TPC6102(0.06) TPC8303(0.035) TPC8401(0.035) TPC8402(0.035) TPC8403(0.055) 4.5 2SK2989(0.15) 2SJ537(0.19) 2SJ525(0.12) TPC8208(0.05) TPCS8209(0.03) TPC8004(0.05) N# TPCS8205(0.045) CN TPC8402(0.05) N# TPCS8210(0.03) P TPC8104-H(0.065) P# TPC8305(0.03) TPCS8209(0.05) P TPCS8302(0.035) N TPCF8001(0.032) P# TPC8303(0.021) P TPC6103(0.035) PDTPC8401(0.038) P TPC6104(0.04) N TPC8211(0.036) P TPCF8101(0.028) N TPC6001(0.03) N TPC6002(0.03) N# TPC6004(0.024) N TPC6003(0.024) TPC8207(0.02) N# TPC6005(0.028) TPC8203(0.021) TPCS8102(0.02) TPCS8211(0.024) CN TPC8401(0.021) TPCS8204(0.017) CN TPC8403(0.033) P# TPCS8102(0.02) P TPCS8101(0.025) N# TPCS8212(0.024) P TPCF8104(0.028) N# TPCS8208(0.017) NSTPC8A01(0.025) P TPCF8102(0.030) PDTPCP8J01(0.035)(-32V) 2SJ668(0.17) 2SJ315(0.25) 2SJ377(0.19) 2SJ378(0.19) 2SJ438(0.19) 2SK2229(0.16) 2SK2231(0.16) 2SK2741(0.16) N TPC8206(0.05) 2SK2399(0.23) 2SK2400(0.23) 2SK3205(0.52) 2SJ407(1.0) 2SK2381(0.8) 2SK2835(0.8) 2SK2920(0.8) 7 2SJ512(1.25) 2SK2662(1.5) 2SK2661(1.5) 2SK2991(1.5) 2SK3316(1.8) 2SK3466(1.5) 2SK3417(1.8) 2SK3627(1.5) 2SK3563(1.5) 2SK3758(1.5) 2SK2610(2.5) 2SK2717(2.5) 2SK3565(2.5) 2SK1359(3.8) 5 5.5 6 6.5 2SJ516(0.8) N TPC8206(0.05) TPC8006-H(0.027) TPC8105-H(0.04) TPC8001(0.02) TPCF8001(0.023) 2SK2542(0.85) 2SK2543(0.85) 2SK2776(0.85) 2SK3538(0.85) 2SK3626(0.85) 2SK3561(0.85) 2SK3759(0.85) 8 2SK2350(0.4) NS TPC8A01(0.018) 2SK2914(0.5) New product : -MOSIII series code : -MOSV : -MOSVI : L2--MOSV : L --MOSVI : U-MOS 2 : -MOSVII : -MOSIV Package code POWER-MINI TO-220SIS SP TO-220AB VS-8 TFP VS-6 PS-8 Slim-TFP 2SK2749(2.0) 2SK3700(2.5) 2SK1365(1.8) 2SK2606(1.2) 2SK2847(1.4) 2SK1120(1.8) 2SK2613(1.7) 7.5 2SK2952(0.55) 2SK2607(1.2) TO-92MOD TO-220FL/SM POWER-MOLD TO-3P(N) DP TO-3P(N)IS 7 8 2SK2467(0.83) 2SJ440(0.83) 9 2SK2746(1.7) 2SK3633(1.7) 2SK3667(1.0) 2SK2417(0.5) 2SK2917(0.5) N TPC8210(0.015) P TPC8110(0.025) 6 2SK2604(2.2) 2SK2605(2.2) 2SK2884(2.2) 2SK2544(1.25) 2SK2545(1.25) 2SK2602(1.25) 2SK2777(1.25) 2SK3130(1.55) 2SK3562(1.25) 2SK3761(1.25) 7.5 8.5 2SK2274(1.7) 2SK2679(1.2) 2SK2838(1.2) 6.5 N P N N 4 TPS SOP-8 TO-3P(L) SOP-8 Lead clamp TSSOP-8 TO-3P(SM) TO-220(NIS) SOP Advance Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive N = 1.8-V drive P = P-ch = High-speed diode CN = Complementary N-ch = N-ch CP = Complementary P-ch 2SK3017(1.25) 2SK2611(1.4) 2SK3473(1.6) 8.5 9 NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 7 Selection Guide VDSS(V) ID(A) VDSS(V) 20 P TPC8115(0.01) 30 50 60 2SK2839(0.04) P TPC8109(0.02) 100 150 N N N 500 2SK2601(1.0) 2SK2842(0.52) 2SK3068(0.52) 2SK3313(0.62) 2SK3398(0.52) 2SK3568(0.52) 700 2SK2843(0.75) 2SK2866(0.75) 2SK2889(0.75) 2SK2996(1) 2SK3438(1.0) 2SK3437(1.0) 2SK3399(0.75) 2SK3569(0.75) 2SK3265(1.0) 2SK3453(1.0) 900 10 20 2SK2507(0.046) 2SK2882(0.12) 2SK3387(0.12) 2SK2953(0.4) 15 2SK2917(0.27) 2SK2391(0.085) 2SK2232(0.046) 2SK2311(0.046) 2SK3444(0.082) 2SK3625(0.082) 20 2SK1544(0.2) 25 2SK2314(0.085) 2SK2789(0.085) 27 2SJ334(0.038) 2SJ402(0.038) 30 2SK2466(0.046) 2SK3084(0.046) 27 2SK3443(0.055) 2SK3176(0.052) 2SK2967(0.068) 2SK2995(0.068) 32 30 32 2SK1486(0.095) 2SK2844(0.022) N TPCA8003-H(0.0066) 36 16 18 2SK2837(0.27) 2SK3117(0.27) 2SK2993(0.105) 2SK3388(0.105) 2SK3445(0.105) 2SK1489(1.0) 12 2SK2915(0.4) 2SJ464(0.09) 2SJ620(0.09) 2SJ349(0.045) 2SJ401(0.045) 2SK2782(0.055) 2SK2699(0.65) 14 2SK2698(0.4)2 2SK3314(0.48) 2SK2382(0.18) 2SK2401(0.18) P TPC8114(0.0045) N TPC8018-H(0.0046) 2SK3236(0.02) 2SK3662(0.0125) 35 2SK2385(0.03) 36 2SK3089(0.03) N TPCA8004-H(0.0046) P TPCA8101-H(0.007) P TPCA8102-H(0.006) P TPCA8103(0.0042) 45 ID(A) 13 2SJ412(0.21) 2SJ619(0.21) 2SK3090(0.02) 2SK3127(0.011) $ 2SK3506(0.02) 1000 2SK2968(1.25) 2SK2916(0.4) TPC8013-H(0.0065) TPC8016-H(0.0055) TPC8017-H(0.0066) 25 600 2SK3743(0.4) 2SK3403(0.4) 2SK3544(0.4) 2SJ304(0.12) 2SJ312(0.12) 2SK2614(0.046) 40 2SK3126(0.65) 2SK3309(0.65) 2SK3310(0.65) 2SK3407(0.65) 2SK2508(0.25) 2SK2598(0.25) 16 35 450 2SK2841(0.55) 2SK2949(0.55) 2SK3499(0.55) TPC8015-H(0.008)] TPC8003(0.007) TPC8009-H(0.01) TPC8107(0.007) TPC8112(0.006) 14 18 400 2SJ201(0.625) 2SK1530(0.625) 2SK3625(0.082) 12 15 300 11 2SJ380(0.21) 13 250 2SK2965(0.26) N TPC8014(0.014) P TPC8108(0.013) N TPC8010-H(0.016) P TPC8113(0.01) N[ N N P P 200 2SJ200(0.83) 2SJ440(0.83) 2SK1529(0.83) 2SK3497(0.15) 2SJ618(0.37) 2SK3669(0.125) 10 11 180 40 $ 2SK2550(0.03) 2SK2886(0.02) $ 2SK2744(0.02) $ 2SK3051(0.03) 2SK2233(0.03) 2SK2266(0.03) 2SK2312(0.017) 45 2SK2376(0.017) $ 2SK2398(0.03) 2SK2985(0.0058) $ 2SK2551(0.011) $ 2SK3440(0.008) 2SK2173(0.017) 2SK2745(0.0095) $ 2SK2445(0.018)2 50 55 60 70 75 2SK3131(0.11) 2SK3132(0.09) 50 55 2SK2986(0.0058) 2SK3125(0.007) 2SK3128(0.011) 2SK3129(0.007) 2SK3397(0.006) $ 2SK3389(0.005) 2SK3439(0.005) New product : -MOSIII series code : -MOSV 8 2SK1381(0.032) 2SK3442(0.020) 2SK2267(0.011) 2SK2313(0.011) 2SK2987(0.0058) 2SK1382(0.020) 60 70 2SK3441(0.0058) : -MOSVI : L2--MOSV 75 : L2--MOSVI : U-MOS : -MOSVII : -MOSIV Package code POWER-MINI TO-220SIS SP TO-220AB VS-8 TFP VS-6 PS-8 Slim-TFP TO-92MOD TO-220FL/SM POWER-MOLD TO-3P(N) DP TO-3P(N)IS TPS SOP-8 TO-3P(L) SOP-8 Lead clamp TSSOP-8 TO-3P(SM) TO-220(NIS) SOP Advance Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive N = 1.8-V drive P = P-ch = High-speed diode CN = Complementary N-ch = N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 9 Power MOSFET Characteristics 1.Features of SOP Series Circuit example for DC-DC Converter Switching (high side) Power management High-speed, trench and N-channel MOSFET (N-channel high-speed or ultra high-speed U-MOS III Series) Low On-resistance, trench and P-channel MOSFET (low On-resistance U-MOS IV Series) IN OUT Synchronous rectifier (low side) High-speed, trench and N-channel MOSFET (N-channel high-speed or ultra high-speed U-MOS III Series) MOSBD Development Process of High-Speed U-MOS Series Improved trade-off between On-resistance and gate switch charge due to short-channel structure, trench contact structure and Al straps. 200 RDS(ON) reduction Reduction of package inductance RDS(ON) * QSW (m * nC) High-speed U-MOS II 150 Drain High-speed U-MOS III 100 Ultra High-speed U-MOS III 50 Source Improved characteristics by using Al straps Gate Al straps 0 1999 2002 2003 Chip development High-speed U-MOS II High-speed U-MOS III Ultra high-speed U-MOS III MOSBD (MOSFET with SBD) Package development SOP-8 10 Strap structure SOP Advance Ultra High-Speed U-MOS III Series NEW Electrical Characteristics Comparison Characteristics High-Speed U-MOS III Ultra High-Speed U-MOS III * Low gate switch charge: 14% reduction compared TPC8009-H TPC8017-H 11 7.3 7.8 175 1290 56.9 13.6% RDS(ON)(m) to high-speed U-MOS III * Low On-resistance (Al straps): 34% reduction compared to high-speed U-MOS III * Housed in SOP Advance, high current, thin and excellent heat dissipated package 43% RDS(ON) X Qsw reduction (compared to high-speed U-MOS III) Qsw(nC) 9.1 Cgd(pF) 250 Cgs(pF) 1210 RDS(ON)XQsw(m*nC) 100.1 Capacitance ratio (Cgd / Cgs) 20.7% Performance Index: improved 43% Control shootthrough current @RDS(ON): VGS = 4.5 V typ. Qsw: VDS = 24 V typ. Cgd/Cgs: VDS = 10 V typ. DC-DC Converter Efficiency Comparison * Ultra High-Speed U-MOS III vs. Conventional Products 92% @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V TPC8020-H+TPC8020-H Solid line: Ultra High-Speed U-MOS III Dotted line: High-Speed U-MOS III (conventional products) Efficiency (%) 90% 88% 86% Efficiency improved 84% TPC8009-H+TPC8009-H 82% TPC8020-H+TPC8018-H TPC8009-H+TPC8013-H 80% 78% 2 0 4 6 8 10 12 14 16 Output Current Iout (A) * Comparison when ultra high-speed MOS III Used in Combination @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V TPC8020-H+TPC8020-H 91% Solid line: the best combination 90% 1. Low current(Iout 10 A) TPC8020-H + TPC8020-H 2. High current(Iout >10 A) TPC8020-H + TPC8018-H 89% Efficiency (%) 88% 87% TPC8017-H+TPC8018-H 86% 85% TPC8020-H+TPC8017-H 84% TPC8017-H+TPC8017-H 83% TPC8020-H+TPC8018-H 82% 81% 0 2 4 6 8 10 12 14 16 Output Current Iout (A) Q1 L1 VIN QSW(nC) RDS(ON)(m) @VGS = 4.5 V @VDS = 24 V VOUT / IOUT Q2 CIN SBD Control IC C1 RL [Test conditions] f = 300 kHz VIN = 17.6 V VOUT = 1.6 V Ultra High-Speed U-MOS III High-Speed U-MOS III TPC8020-H TPC8017-H TPC8018-H TPC8009-H TPC8013-H 9.5 7.3 5.0 11.0 6.6 6.9 7.8 12.0 9.1 15.6 11 Power MOSFET Characteristics MOSBD (MOSFET with SBD) NEW Characteristics * Compact size Integrated three devices ( two MOSFETs and one SBD) into a single package * High-performance device High side: high-speed MOSFET (high-speed U-MOS III) Low side: MOSBD (U-MOS III MOSFET with a SBD) MOSBD Conventional Circuit Built-in SBD High side (Q1) High side Low side (Q2) Low side SOP-8 Q2 + SOP-8 SBD + SFLAT Q1 SOP-8 Applications * Portable devices: DC-DC converters for notebook PCs Product Line-up Maximum ratings Part Number TPC8A01 12 VDSS(V) ID(A) 30 6 30 8.5/1 Circuit Configuration N-ch/ N-ch+SBD RDS(ON) max (m) 10V 4.5V Qg typ. (nC) 25 30 17 940 High-speed U-MOS III 18 21 49 2295 U-MOS III Ciss typ. (pF) Remark NEW SOP Advance Characteristics * Mounting area is identical with that of SOP-8. * On-resistance reduction and thin package (1.0 mm max) employing flat leads and Al straps 1 0.95 0.05 4 5.0 0.2 0.6 0.1 1,2,3: Source 4: Gate 5,6,7,8: Drain SOP Advance Features of SOP Advance 30 1.0 44.6 2.78 40 0.5 The same PCB area as SOP-8 (mm ) 30 (mm) 1.9 (C / W) 65.8 (C / W) - (A) 18 (m) 1.6 Current rating Package resistance A SOP-8 PCB area rth(ch-c) 0.8 0.1 0.05 S Total height (max) rth(ch-a) (t = 10s) 8 0.595 2 (Note 1) 5 4.25 0.2 0.166 0.05 6.0 0.3 0.15 0.05 1 S 4 A 5 3.5 0.2 0.05 M 8 1.1 0.2 0.4 0.1 1.27 5.0 0.2 0.5 0.1 * Achieved high current and high power dissipation by attaching an exposed heat sink on the bottom of the package (ID(DC) = 40 A, PD = 45 W) (Note 2) Low profile, t = 0.9 mm High-power dissipation High-current guarantee Al straps Note 1: When mounted on a glass epoxy board (25.4 mm X25.4 mm x1.6 mm) Note 2: without chip resistance Applications * Portable devices: DC-DC converters for notebook PCs Product Line-up Maximum Ratings Part Number VDSS(V) ID(A) TPCA8005-H 30 27 TPCA8003-H 30 35 TPCA8004-H 30 40 TPCA8102 -30 -40 TPCA8103 -30 -40 Circuit Configuration N-ch Single P-ch Single RDS(ON) max(m) Qg typ. Ciss typ. (nC) (pF) Remark 10V 4.5V 4.0V 9 13 -- 24 1395 6.6 9.5 -- 25 1465 4.6 6.2 -- 37 2265 Ultra high-speed 6 -- 14 109 4600 U-MOS III 4.2 -- 6.8 184 7880 U-MOS IV Ultra high-speed U-MOS III Ultra high-speed U-MOS III U-MOS III : Under development 13 Power MOSFET Characteristics SOP-8 Series Line-up .... [Part Number: TPC8xxx] Features * Low On-resistance and high-speed switching series are lined up. Low On-resistance Series: U-MOS III / IV High-speed switching series: high-speed U-MOS III, ultra high-speed U-MOS III * On-resistance reduction employing Al straps Product Line-up Part Number TPC8004 TPC8001 TPC8006-H TPC8020-H TPC8014 TPC8010-H TPC8003 TPC8015-H TPC8017-H TPC8016-H TPC8018-H TPC8012-H TPC8208 TPC8207 TPC8209 TPC8211 TPC8203 TPC8210 TPC8206 TPC8104-H TPC8105-H TPC8109 TPC8108 TPC8111 TPC8113 TPC8107 TPC8112 TPC8114 TPC8115 TPC8110 TPC8305 TPC8303 TPC8401 TPC8402 TPC8403 TPC8A01 Maximum Ratings Circuit VDSS(V) ID(A) Configuration 4.5V 4V 2.5V Qg typ. (nC) Ciss typ. (pF) 30 5 50 -- 80 -- 16 475 30 7 20 -- 30 -- 40 1250 30 7 27 -- 40 -- 16 790 30 13 9 13 -- -- 23 1395 30 11 14 22 -- -- 39 1860 30 11 16 25 -- -- 18 1020 30 13 7 -- 13 -- 90 4380 30 13 8 12 -- -- 29 1460 30 15 6.6 9.5 -- -- 25 1465 30 15 5.7 7.5 -- -- 46 2380 30 18 4.6 6.2 -- -- 38 2265 200 1.8 400 -- -- -- 11 440 20 5 -- -- 50 70 9.5 780 20 6 -- -- 20 30 22 2010 40 -- 60 -- 15 600 36 44 -- -- 25 1250 N-ch Single 30 5 30 5.5 30 6 21 -- 32 -- 40 1700 30 8 15 20 -- -- 75 3530 60 -30 -30 -30 -30 -30 -30 -30 -30 -30 -20 -40 -20 -30 30 -30 30 -30 30 -30 30 30 5 -5 -7 -10 -11 -11 -11 -13 -13 -18 -10 -8 -5 -4.5 6 -4.5 5 -4.5 6 -4.5 6 8.5/1 50 65 40 20 13 12 10 7 6 4.5 -- 25 -- 35 21 35 50 35 33 55 25 18 -- -- -- -- -- -- -- -- -- -- 10 -- 30 -- -- -- -- -- -- -- 30 21 75 120 60 30 23 18 18 15 14 6.8 -- 35 -- 65 32 65 80 65 46 90 -- -- -- -- -- -- -- -- -- -- -- -- 14 -- 50 -- -- -- -- -- -- -- -- -- 17 17 32 45 77 107 107 130 130 180 115 48 24 28 40 28 16 28 17 18 17 49 800 730 1440 2260 3510 5710 4500 5880 5880 7480 9130 2180 2030 970 1700 970 475 970 850 940 940 2295 : Al Strap type : Under development 14 RDS(ON) max (m) 10V N-ch Dual P-ch Single P-ch Dual N-ch/ P-ch N-ch/ N-ch+SBD Remark -MOS VI -MOS VI High-speed U-MOS II Ultra high-speed U-MOS III U-MOS III High-speed U-MOS III U-MOS II High-speed U-MOS III Ultra high-speed U-MOS III High-speed U-MOS III Ultra high-speed U-MOS III -MOS V U-MOS III U-MOS III U-MOS II U-MOS III U-MOS II U-MOS III U-MOS II High-speed U-MOS II High-speed U-MOS II U-MOS III U-MOS III U-MOS IV U-MOS IV U-MOS III U-MOS III U-MOS IV U-MOS IV U-MOS III U-MOS II U-MOS II U-MOS II U-MOS II -MOS VI U-MOS II U-MOS II U-MOS II High-speed U-MOS III U-MOS III TSSOP-8 Series Features Features * Achieved RDS(ON) = 17m for TPCS8204 employing U-MOS III design * Common-drain types are available: Ideal use for lithium-ion battery protection and reverse current protection Characteristics * Employed the third generation design of ultra-high cell density trench technology (18 Mcell/cm2) * Reduced On-resistance by 25% than that of conventional products (in comparison with Toshiba U-MOS II device) 20 RDS(ON) typ. (m) @VGS = 4 V Low On-resistance N-channel 20-V device (TSSOP-8 / dual type) Dual type / VDSS = 20 V 15 10 5 0 U-MOS II U-MOS III U-MOS IV Common-drain Type Common-drain series suitable for reverse current prevention in mobile devices and lithium ion secondary battery protection D2 S2 S2 G2 Common-drain type Reverse current prevention Conventional type D2 S2 S2 G2 DC-DC converters Total impedance reduced by elimination of external wiring Charger Battery protection Control IC Wiring resistance included since D1 and D2 are externally wired together D1 S1 S1 G1 D1 S1 S1 G1 Product Line-up Part Number TPCS8004 TPCS8007 TPCS8006 TPCS8008 TPCS8102 TPCS8101 TPCS8104 TPCS8105 TPCS8205 TPCS8209 TPCS8210 TPCS8204 TPCS8208 TPCS8211 TPCS8212 TPCS8302 TPCS8303 Maximum Ratings VDSS(V) ID(A) Circuit Configuration RDS(ON) max (m) 10V 4V 2.5V 2.0V Qg typ. (nC) Ciss typ. (pF) Remark 800 500 -- -- -- -- -- -- 12 10 380 630 -MOS V -MOS V 1000 -- -- -- 11 380 -MOS V 550 -- -- -- -- -- -MOS V U-MOS II 200 200 1.3 1.9 250 1.1 250 1.8 -20 -6 -- 20 38 -- 37 2740 -30 -6 25 40 -- -- 37 1810 U-MOS II -30 -11 12 18 -- -- 107 5710 U-MOS IV -30 -11 13.5 19.5 -- -- 107 5710 U-MOS IV 20 5 -- 45 60 90 11 760 U-MOS II 20 5 -- 30 40 60 15 1280 U-MOS III 20 5 20 6 N-ch Single P-ch Single N-ch Dual -- 30 40 60 15 1280 U-MOS III -- 17 22 35 22 2160 U-MOS III 20 6 -- 17 22 35 22 2160 U-MOS III 20 6 -- 24 29 45 20 1590 U-MOS III U-MOS III 20 6 -- 24 29 45 20 1590 -20 -6 -- 35# 60 95 28.5 1590 U-MOS III -20 -5 -- 21# 30 80 33 2560 U-MOS IV P-ch Dual : Common-drain : Under development 15 Power MOSFET Characteristics 2. VS Series Package The VS Series that achieves the one of the industries' thinnest class package (height: 0.85 mm max). * VS-6 Series: Standard size (2.9 mm x 1.6 mm) that is suitable for general-purpose use. * VS-8 Series: The flat package offers more powers as compared with the VS-6 package, and the On-resistance is reduced by 20% while the mounting area is reduced by 32%. In addition, the power dissipation is improved by 14%. * PS-8 Series: Achieving the same mounting area as the VS-6 Series, PS-8 is improved chip mounting capability, widen mold width using flat leads. This Series is also reduced the On-resistance by 70%. VS-6 2.8 2.9 32% 8.1 mm2 0.95 10% downsizing higher power VS-8 PS-8 2.9 5.5 mm2 0.65 2.8 1.9 2.9 8.1 mm2 0.65 (Unit: mm, typical values unless otherwise specified.) Main Applications DC-DC converters: notebook PCs, LCDs, PPDAs Switches: Cell phones, notebook PCs, USB switches, power management switches Motor drives: HDDs 16 VS-6 Series Line-up .... [Part Number: TPC6xxx] Features * Achieved ultra low-On resistance employing U-MOS II design * Zener diode between gate and source for all products * Thin package whose height is as low as 0.85 mm (max) on a board. Product Line-up Maximum Ratings Part Number TPC6001 TPC6004 TPC6002 TPC6003 TPC6005 TPC6201 TPC6103 TPC6105 TPC6101 TPC6104 TPC6102 VDSS(V) ID(A) 20 20 30 30 30 30 -12 -20 -20 -20 -30 6 6 6 6 6 2.5 -5.5 -2.7 -4.5 -5.5 -4.5 Circuit Configuration RDS(ON) max (m) 10V 4.5V 2.5V 2.0V 1.8V -- -- 30 24 -- 95 -- -- -- -- 60 30 24 50 32 28 145 35 110 60 40 100 45 32 -- -- 35 -- 55 160 100 60 -- 60 37 -- -- 41 -- -- -- 180 -- -- -- -- -- -- -- -- 90 300 -- 120 -- N-ch Single N-ch Dual P-ch Single Qg typ. Ciss typ. (nC) (pF) 15 17 13 25 19 4.7 20 6 12 19 11 755 1400 610 1250 1420 170 1520 470 830 1430 500 Marking Remark S2A S2C S2B S2D S2E S4A S3C S3E S3A S3D S3B U-MOS II U-MOS III U-MOS II U-MOS III U-MOS III U-MOS II U-MOS III U-MOS III U-MOS II U-MOS III U-MOS II Marking Remark F2A F3A F3C F3B F3D F4A F5A F5B F5C F5D U-MOS III U-MOS III U-MOS III U-MOS III U-MOS IV U-MOS III U-MOS III U-MOS IV U-MOS IV U-MOS IV U-MOS III U-MOS IV U-MOS III U-MOS III VS-8 Series Line-up .... [Part Number: TPCF8xxx] Features * Achieved ultra low-On resistance employing U-MOS III design * Zener diode between gate and source for all products * Thin package whose height is as low as 0.85 mm (max) on a board. * 32% mounting area reduction compared to VS-6 (TSOP-6) employing flat package with high cell density * PD = 2.5 W @ t = 5s when a device mounted on a glass epoxy board Product Line-up Maximum Ratings Part Number TPCF8001 TPCF8101 TPCF8103 TPCF8102 TPCF8104 TPCF8201 TPCF8301 TPCF8302 TPCF8303 TPCF8304 TPCF8402 TPCF8A01 TPCF8B01 VDSS(V) ID(A) 30 -12 -20 -20 -30 20 -20 -20 -20 -30 30 -30 20 -20 7 -6 -5.5 -6 -6 3 -2.7 -3 -3 -3.2 4 -3.2 3.0 -2.7 Circuit Configuration RDS(ON) max (m) 10V 4.5V 2.5V 2.0V 1.8V 23 -- -- -- 28 -- -- -- -- 72 48 72 -- -- 31 28 110 30 38 49 110 59 58 105 77 105 49 110 -- 40 160 41 -- 66 160 95 87 -- -- -- 66 160 -- -- -- -- -- 100 -- 200 -- -- -- -- 100 -- -- 85 300 90 -- -- 300 -- 250 -- -- -- -- 300 N-ch Single P-ch Single N-ch Dual P-ch Dual N-ch + P-ch N-ch+SBD P-ch+SBD Qg typ. Ciss typ. (nC) (pF) 25.4 18 6 19 34 7.5 6 11 11 16 10 14 7.5 6 1270 1600 470 1550 1760 590 470 800 860 600 470 600 590 470 F6B F7A F8A PS-8 Series Line-up .... [Part Number: TPCP8xxx] Features * The same mounting area as the VS-6 (TSOP-6) Series * Using flat leads and the latest process, U-MOS, VS-6 Series is able to offer a 70% RDS(ON) reduction compared to VS-6 Series. * Zener diode between gate and source Product Line-up Part Number TPCP8201 TPCP8401 TPCP8402 TPCP8J01 Maximum Ratings VDSS(V) ID(A) 30 20 -12 30 -30 -32 50 4.2 0.1 -5.5 4.2 -3.4 -6.0 0.1 Circuit Configuration N-ch Dual N-ch / P-ch Load Switch N-ch + P-ch N-ch + NPN RDS(ON) max (m) 10V 4.5V 2.5V 1.8V 50 -- -- 50 72 35 -- 77 3(4V) 38 -- 4 58 -- -- -- 103 -- -- -- -- -- -- -- 77 105 49(4V) -- Qg typ. (nC) Ciss typ. (pF) 10 -- 20 470 9.3 1520 470 10 14 34 -- 600 1762 -- Remark U-MOS III -MOS VI U-MOS III U-MOS III U-MOS IV U-MOS IV NPN 17 Power MOSFET Characteristics 3. TFP (Thin Flat Package) Series Features TFP Stands for Thin Flat Package Thin flat package has a mounting volume 58% less than that of the TO-220SM. Separate package inputs and outputs enable stable equipment operation. Improved heat dissipation characteristic enables mounting of higher-power devices. Package range for surface-mount devices 100 100 NEW TFP TO-220 10 80 TO-3P (SM) 70 (15.5 15.0) DP Drain Current ID (A) Drain Current ID (A) (SM) (10.0 10.0) SOP-8 (6.8 5.5) 1.0 SP PW MOLD (6.5 3.5) (6.8 5.5) TFP vs TO-220SM 90 PW MINI TFP 60 50 40 30 TO-220 SM 20 (4.6 2.5) ( ) : Body Size 10 Unit : mm 0.1 0.1 1.0 10 100 1 1000 10 100 Drain-source voltage VDSS (V) Power Dissipation PD (W) Applications DC-DC converters Motherboards Automotive equipment TFP line-up Maximum Ratings Part Number 2SJ619 2SJ620 2SK3397 2SK3389 2SK3439 2SK3440 2SK3441 2SK3842 2SK3442 2SK3387 2SK3443 2SK3444 2SK3388 2SK3445 2SK3499 2SK3544 2SK3466 2SK3538 2SK3398 2SK3438 : Under development 18 VDSS(V) ID(A) RDS(ON) max (m) VGS=10V VGS=4V Qg typ. Ciss typ. (nC) (pF) Remarks 2 -100 -16 210 320 48 1100 L --MOS V -100 -18 90 120 140 2900 L2--MOS V 30 70 6.0 - 110 5000 U-MOS II 30 75 5.0 - 62 3530 U-MOS II 30 75 5.0 10.0 116 5450 U-MOS II 60 50 8.0 - 55 3700 U-MOS II 60 75 5.8 10.0 210 9300 U-MOS II 60 75 (5.8) - (196) (12400) U-MOS III 100 45 20 - 85 4100 U-MOS II 150 18 120 180 57 1380 L2--MOS V 150 30 55 - 45 2030 -MOS V 200 25 82 - 44 2080 -MOS V 250 20 105 - 100 4000 -MOS V 250 20 105 - 45 2090 -MOS V 400 10 550 - 34 1340 -MOS V 450 13 400 - 34 1600 -MOS V 500 5 1500 - 17 780 -MOS V 500 8 850 - 30 1300 -MOS V 500 12 520 - 45 2040 -MOS V 600 10 1000 - 28 1200 -MOS V 1000 3-1. Heat Dissipation Characteristic Thermal resistance TFP with mounting area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a) almost equivalent to those of the TO-220SM (when mounted on an HIT board). 100 10 TFP TO-220SM 1 0.1 Single pulse 0.01 0.001 0.01 0.1 1 10 100 1000 Actual rating / heat resistance between channel and ambient (with 3 cm x 3 cm HIT mounted) Transient Heat Resistance rth (ch-a) (C/W) Transient Heat Resistance rth (ch-a) (C/W) Actual rating / heat resistance between channel and case (with infinite heat dissipation heat sink mounted) 100 TFP TO-220SM 10 1 0.1 Single pulse 0.01 0.001 0.01 Pulse Width t w (S) 1 10 100 1000 Pulse Width t w (S) 9 10 TO-220SM: equivalent to 2SK3389 13.5 10 TFP: 2SK3389 0.1 2.8 4.5 Unit: mm Application of DC current (with infinite heat dissipation heat sink mounted) The source fin of the TFP generates less heat than the source lead of the TO-220SM due to the TFP'S efficient heat dissipation. TFP: 2SK3389 30 V, 75 A, 5 m Max TO-220SM: equivalent to 2SK3389 Channel, Drain Fin and Source Lead Temperatures (C) Channel, Drain Fin, Source Fin Temperature (C) 160 140 Channel temperature 120 Drain fin temperature 100 Source fin temperature 80 60 40 20 0 0 50 100 Drain Current ID (A) Measured point Drain fin 150 160 140 Channel temperature 120 Drain fin temperature 100 Source lead temperature 80 60 40 20 0 0 50 100 Drain Current ID (A) 150 Measured point Drain fin Source fin Source lead 19 Power MOSFET Characteristics 3-2. For Stable Circuit Operation and High-current, High-speed Switching Stable circuit operation The advantage of MOSFETs is that, because of their high input impedance, they allow high output control with low power drive. However, their disadvantage is that they are susceptible to malfunction due to noise. TFP Series devices have four pins, allowing the input drive to be kept separate from the outputs, thus reducing the risk that the outputs will affect the input. G Load Input control signal S1 S2 D High load current L-component influence on high-current, high-speed switching Lead impedance, which causes problems with high-current, high-speed switching in DC/DC converters, is reduced. R Load D VDD High-current, high-speed switching increases the influence of the L-component between the source and GND. Use of the S1 pin for gate input signal return stabilizes circuit operation by eliminating the influence of the L-component. G VL = L (di/dt) S2 S1 TFP TO-220SM High impedance 20 Switching waveform The four-pin structure results in a shorter rise time and more stable switching, all of which help to reduce the risk of abnormal oscillation. When the S1 pin is not used for input signal return (3 pins): tr = 5.4 ns, ton = 25.1 ns VDS turend on at 40% 3-pin, 4-pin VGS = 2V/div, VDS = 5V/div, tW = 20ns/div Shorter rise time Stable circuit operation When the S1 pin is used for input signal return (4 pins): tr = 4.6 ns, ton = 22.1 ns 4-pin VGS = 2V/div, VDS = 5V/div, tW = 100ns/div 3-pin VGS = 2V/div, VDS = 5V/div, tW = 100ns/div Insert a coil of L = 17 nH between gate and source 21 Power MOSFET Characteristics 4. TO-220SIS -MOS IV / VI Series Features * The shorter the standoff height is achieved, the lower the product height on a PCB will be; hence, the mounting height is reduced by approximately 2.8 mm as compared to the existing package, TO-220NIS. This contributes to equipment's size reduction thinner size. * The chip design optimization reduced Qg characteristics. Also, the switching characteristics realized 10-% faster than that of exsisting products. * Improved heat dissipation by employing a Cu connector. Package Dimensions o3.2 4.5 L1-L2 = 2.8 3.9 3.0 2.7 2.8 MAX L2 12.5 MIN 13.0 MIN 5.6 MAX L1 4.5 o3.2 10 15 3.9 3.0 2.7 15 10 New package TO-220SIS Existing package: TO-220NIS Board Unit: mm Line-up Maximum Ratings Series New Products 2SK3757 22 Conventional Products 9 330 2SK3543 16 550 2SK2662 VGS = 4V 450 2 2.45 5 1.5 8 0.85 28 1050 2SK2543 0.52 42 1500 2SK2842 2SK3767 2 4.5 9 320 2SK3067 2SK3567 3.5 2.2 17 550 2SK2750 2SK3562 6 1.25 28 1050 2SK2545 2SK3667 7.5 1.0 33 1300 2SK2996 2SK3569 10 0.75 42 1500 2SK2843 2SK3797 (13) (0.45) (62) (3150) 2SK3566 2.5 6.4 12 470 2SK2718 2SK3564 3 4.3 17 700 2SK2700 2SK3798 4 3.5 2SK3565 5 2.5 28 1150 2SK2717 2SK3742 5 2.5 25 1150 2SK2717 2SK3799 (8) (1.4) 500 2SK3568 : Under development C iSS typ. (pF) VGS = 10V 12 2SK3561 -MOS IV Q g typ. (nC) ID (A) 2SK3563 -MOS VI R DS(ON) max () VDSS (V) 600 900 Improved Heat Dissipation <Conventional design> <TO-220SIS> Power dissipation efficiency improvement Generated heat from the chip surface is dissipated to the pins on the both ends via the connectors. Comparison of Electrical Characteristics with Conventional and New Products VDSS(V) ID(A) Conventional Product 2SK2717 New Products 2SK3565 900 900 5 2.5(max) 28(typ.) 170(typ.) 5 RDS(ON)() 2.5(max) Qg(nC) 45(typ.) toff(ns) 200(typ.) Conventional product: 2SK2717 New product: 2SK3565 Qg ID = 2 A/div 50 45 45 40 40 Qg (nC) Qg (nC) Switching-Off Waveform Comparison Qg 50 35 30 25 20 20 2SK2717 t = 50 ns/div 15-% improvement on toff characteristics as compared to the conventional product toff 250 230 230 210 190 28 (typ.) toff 250 toff (ns) toff (ns) VDS = 50 V/ns 30 25 2SK3565 VGS = 2 V/div 35 210 190 170 170 150 150 typ. 23 Power MOSFET Characteristics 5. L2 --MOS V Series 2 High-integration (4.4 M cells / inch ), ultra-low On-resistance series based on original technologies * On-resistance per unit area reduced by 15% (compared to L2 --MOS IV, RDS(ON) max) * Operation at logic level voltage [VGS = 4-V drive] (Vth = 0.8 V to 2.0 V) * Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode * Protection zener diode between gate and source N-ch product line-up Part Number 24 VDSS (V) ID (A) PD (W) RDS(ON) () Package Type typ. max VGS (V) RDS(ON) () ID (A) typ. max VGS (V) ID (A) Qg typ. (nC) 2SK2964 30 2 1.5 PW-Mini 0.13 0.18 10 1 0.18 0.25 4 1 5.8 2SK2844 30 35 60 TO-220AB 0.016 0.02 18 0.026 0.035 4 18 40 2SK3089 30 40 50 TO-220FL/SM 0.025 0.03 10 10 20 -- -- -- -- 23 2SK3090 30 45 60 TO-220FL/SM 0.016 0.02 10 25 -- -- -- -- 39 2SK3127 30 45 65 TO-220FL/SM 0.0095 0.012 10 25 -- -- -- -- 66 2SK3128 30 60 150 TO-3P (N) 0.0095 0.012 10 30 -- -- -- -- 66 2SK3125 30 70 150 TO-3P (SM) 0.0053 0.007 10 30 -- -- -- -- 130 2SK2989 50 5 0.9 LSTM 0.12 0.15 10 2.5 0.24 0.33 4 1.3 6.5 2SK2614 50 20 40 DP 0.032 0.046 10 10 0.055 0.08 4 5 25 2SK2507 50 25 30 TO-220NIS 0.034 0.046 10 12 0.058 0.08 4 6 25 2SK2886 50 45 40 TO-220NIS 0.014 0.02 10 25 0.027 0.036 4 25 66 2SK3051 50 45 40 TO-220FL/SM 0.024 0.03 10 25 -- -- -- -- 36 2SK2744 50 45 125 TO-3P (N) 0.015 0.02 10 25 -- -- -- -- 68 2SK2550 50 45 100 TO-3P (N) 0.024 0.030 10 25 -- -- -- -- 36 2SK2551 50 50 150 TO-3P (N) 0.0072 0.011 10 25 -- -- -- -- 130 2SK2745 50 50 150 TO-3P (N) 0.007 0.0095 10 25 0.011 0.016 4 25 2SK2615 60 2 0.5 PW-Mini 0.23 0.3 10 1 0.33 0.44 4 1 6 2SK2961 60 2 0.9 LSTM 0.2 0.27 10 1 0.26 0.38 4 1 5.8 130 2SK2229 60 5 1.2 TPS 0.12 0.16 10 2.5 0.2 0.3 4 1.3 12 2SK2231 60 5 20 PW-Mold 0.12 0.16 10 2.5 0.2 0.3 4 1.3 12 2SK2782 60 20 40 DP 0.039 0.055 10 10 0.06 0.090 4 5 25 2SK2232 60 25 35 TO-220NIS 0.036 0.046 10 12 0.057 0.08 4 12 38 38 2SK2311 60 25 40 TO-220FL/SM 0.036 0.046 10 12 0.057 0.08 4 12 2SK2385 60 36 40 TO-220 NIS 0.022 0.03 10 18 0.04 0.055 4 15 60 2SK2233 60 45 100 TO-3P (N) 0.022 0.03 10 25 0.04 0.055 4 15 60 2SK2266 60 45 65 TO-220FL/SM 0.022 0.03 10 25 0.04 0.055 4 15 60 2SK2312 60 45 45 TO-220NIS 0.013 0.017 10 25 0.019 0.025 4 25 110 25 110 2SK2376 60 45 100 TO-220FL/SM 0.013 0.017 10 25 0.019 0.025 2SK2398 60 45 100 TO-3P (N) 0.022 0.03 10 25 -- -- 2SK2173 60 50 125 TO-3P (N) 0.013 0.017 10 25 0.019 0.025 4 -- 4 2SK2445 60 50 125 TO-3P (N) 0.014 0.018 10 25 -- -- 2SK2267 60 60 150 TO-3P (L) 0.008 0.011 10 30 0.012 0.015 4 2SK2313 60 60 150 TO-3P (N) 0.008 0.011 10 30 0.012 0.015 2SK2962 100 1 0.9 LSTM 0.5 0.7 10 0.5 0.65 0.95 2SK2963 100 1 0.5 PW-Mini 0.5 0.7 10 0.5 0.65 2SK2200 100 3 1.3 TPS 0.28 0.35 10 2 -- -- 60 25 -- 110 110 30 170 4 30 170 4 0.5 6.3 0.95 4 0.5 6.3 0.36 0.45 4 2 13.5 13.5 2SK2201 100 3 20 PW-Mold 0.28 0.35 10 2 0.36 0.45 4 2 2SK2399 100 5 20 PW-Mold 0.17 0.23 10 2.5 0.22 0.3 4 2.5 22 2SK2400 100 5 1.2 TPS 0.17 0.23 10 2.5 0.22 0.3 4 2.5 22 2SK2391 100 20 35 TO-220NIS 0.068 0.085 10 10 0.09 0.13 4 10 50 2SK2314 100 27 75 TO-220AB 0.066 0.085 10 15 0.09 0.13 4 15 50 2SK2789 100 27 60 TO-220FL/SM 0.066 0.085 10 15 0.09 0.13 4 15 50 P-ch product line-up Part Number ID (A) VDSS (V) RDS(ON) () PD (W) Package Type typ. 2SJ511 - 30 -2 1.5 PW-Mini 2SJ525 - 30 -5 1.3 TPS 2SJ537 - 50 -5 0.9 2SJ360 - 60 -1 2SJ507 - 60 2SJ377 - 60 2SJ438 - 60 max VGS (V) RDS(ON) () ID (A) typ. max VGS (V) ID (A) Qg typ. (nC) 0.32 0.45 - 10 -1 0.55 0.76 -4 -1 5.5 0.1 0.12 - 10 - 2.5 0.17 0.2 -4 - 2.5 27 LSTM 0.16 0.19 - 10 - 2.5 0.27 0.34 -4 - 1.3 18 0.5 PW-Mini 0.55 0.73 - 10 - 0.5 0.86 1.2 -4 - 0.5 6.5 -1 0.9 LSTM 0.5 0.7 - 10 - 0.5 0.72 1.0 -4 - 0.5 5.6 -5 20 PW-Mold 0.16 0.19 - 10 - 2.5 0.24 0.28 -4 - 2.5 22 -5 25 TO-220NIS 0.16 0.19 - 10 - 2.5 0.24 0.28 -4 - 2.5 22 2SJ378 - 60 -5 1.2 TPS 0.16 0.19 - 10 - 2.5 0.24 0.28 -4 - 2.5 22 2SJ349 - 60 - 20 45 TO-220NIS 0.033 0.045 - 10 - 10 0.05 0.09 -4 - 10 90 2SJ401 - 60 - 20 100 TO-220FL/SM 0.033 0.045 - 10 - 10 0.05 0.09 -4 - 10 90 2SJ334 - 60 - 30 45 TO-220NIS 0.029 0.038 - 10 - 15 0.046 0.06 -4 - 15 110 2SJ402 - 60 - 30 100 TO-220FL/SM 0.029 0.038 - 10 - 15 0.046 0.06 -4 - 15 110 2SJ508 - 100 -1 1.5 PW-Mini 1.34 1.9 - 10 - 0.5 1.68 2.5 -4 - 0.5 6.3 2SJ509 - 100 -1 0.9 LSTM 1.34 1.9 - 10 - 0.5 1.68 2.5 -4 - 0.5 6.3 2SJ380 - 100 - 12 35 TO-220NIS 0.15 0.21 - 10 -6 0.25 0.32 -4 -6 48 2SJ412 - 100 - 16 60 TO-220FL/SM 0.15 0.21 - 10 -6 0.25 0.32 -4 -6 48 2SJ464 - 100 - 18 45 TO-220NIS 0.064 0.09 - 10 -9 0.085 0.12 -4 -9 140 6. 2.5-V Drive -MOS V Series Features * 2.5-V drive: Gate drive voltage reduced from 4 V to 2.5 V * Vth = 0.5 V to 1.1 V: Designed to operate at high temperatures with threshold voltage width reduced from 1.2 V to 0.6 V * Avalanche withstand capability: Built-in protection zener diode between gate and source; cell structure used to improve avalanche withstand capability Line-up Part Number VDSS(V) ID(A) 2SJ465 -16 -2 PD(W) 0.5 2SJ439 2SK2549 -16 16 -5 2 20 0.5 2SK2493 16 5 20 Qg typ. (nC) RDS(ON) max () VGS (V) ID (A) RDS(ON) max () VGS (V) ID (A) 0.71 -4 -1.0 1.0 -2.5 -0.5 5 -4 4 -2.5 1.0 0.28 PW-Mini 0.20 0.29 0.38 -2.5 2.5 -2.5 0.5 24 5 PW-Mold 0.10 4 2.5 0.12 2.5 2.5 23 Maximum Ratings Package Type PW-Mini PW-Mold 25 Power MOSFET Characteristics 7. U-MOS III (Trench Type) Series High-integration is achieved using trench structure technique. Low-voltage driving (VGS = 4V) is possible because of ultra-low On-resistance. Planar structure Trench (U-MOS) structure Source Gate Source Poly Si N N P N Gate Poly Si N P + + N P + N P + N N P P N N N+ N+ Drain Drain Features * High density by the submicron technology (phase I = 10 M cell / inch2, phase II = 30 M cell / inch2) * Reduces 60% RDS(ON) by per unit area (as compared to the maximum RDS(ON) of the conventional L2--MOS V) * Possible to operate by logic level voltage (VGS = 4 V) * Avalanche withstanding capability guarantee and progress in di/dt capability. * Protection zener diode between gate and source Line-up Applications Motor drive solenoids Lamp drivers DC-DC converters Maximum Ratings Part Number Package Type VDSS(V) ID(A) PD(W) 2SK2466 100 30 40 TO-220NIS 2SK3084 100 30 65 TO-220FL / SM VGS(V) ID(A) RDS(ON) max (m) 46 10 15 70 4 15 68 46 10 15 70 4 15 68 RDS(ON) max (m) VGS(V) ID(A) Qg typ. (nC) 60 35 30 TO-220NIS 20 10 18 36 4 18 52 -60 -5 20 PW-Mold 170 -10 -2.5 250 -4 -2.5 15 2SK3662 60 35 35 TO-220NIS 12.5 10 18 19 4 18 91 2SK3842 60 75 125 TFP 5.8 10 38 - - - 196 2SK3844 60 45 45 TO-220NIS 5.8 10 23 - - - 196 2SK3845 60 70 125 TO-3P(N) 5.8 10 23 - - - 196 2SK3236 2SJ668 Remarks U-MOS I U-MOS II U-MOS III Features of U-MOS II [1] Reduces 60% RDS(ON) by per unit area * RDS(ON) = 5.8 m (max) MOSFET housed in TO-220 package VGS = 10 V VGS = 4 V ID - VDS 50 * Operate with logic level voltage (VGS = 4 V) ID - VDS 50 2SK2985 Conventional devices 30 20 10 Conventional devices 30 20 10 Common source TC = 25C 0 0 0.2 0.4 0.6 0.8 Drain-source Voltage V DS (V) 26 2SK2985 40 Drain Current ID (A) Drain Current ID (A) 40 Common source TC = 25C 0 1.0 0 0.2 0.4 0.6 0.8 Drain-source Voltage V DS (V) 1.0 8. -MOS VII Series With employing submicron technology and reducing gate charge, this latest series realized extremely fast speed and low RDS(ON). Features * Low RDS(ON) * Total gate charge (Qg) reduction * Fast speed switching * High avalanche withstanding capability Dynamic Input / Output Characteristics Gate-source voltage VGS(V) 20 Applications * Digital amps * DC-DC converters * Motor drives Line-up Part Number 2SK3669 Maximum Ratings RDS(ON) max ID(A) VDSS(V) (m) 100 10 125 Crss typ. (pF) Qg typ. (nC) Qsw typ. (nC) Package Type 480 9 8.0 4.2 PW-Mold 2SK2399 (-MOS VII) (-MOS V) 12 65% reduction 8 Common source Tc = 25 C ID = 10 A VDD = 80 V Pulse test 4 0 Ciss typ. (pF) 2SK3669 16 0 5 10 15 20 25 30 Total gate charge Qg(nC) Comparison of Switching Characteristics with -MOS V VDS = 10 V/div VDS = 10 V/div On 0 0 VGS = 2 V/div VGS = 2 V/div 10 ns/div 10 ns/div 2SK2399 (-MOS V) 2SK3669 (-MOS VII) VGS = 2 V/div VDS = 10 V/div Off 0 0 VDS = 10 V/div VGS = 2 V/div 50 ns/div 50 ns/div 2SK2399 (-MOS V) 2SK3669 (-MOS VII) 27 Power MOSFET Characteristics 9. -MOS V Series (VDSS = 150 V to 250 V) 200-V Series for Cs / Cy switching in monitors Features * Reduced On-resistance per unit area * Chip size smaller than conventional chips and device cost reduced * Superior breakdown voltage characteristics due to optimized cell structure * Guaranteed absolute maximum voltage rating between gate and source: VGSS = 20 V * Products with VDSS of 200 suitable for resonance capacitance (Cs / Cy) Line-up Maximum Ratings Applications Part Number 2SJ618 2SK407 2SJ567 ID (A) PD (W) -180 -10 130 -5 30 -2.5 -200 2SJ610 2SJ512 -250 2SJ516 2SK3205 -10 -5 18 -10 -2.5 20 2.0 -10 -1.5 10 1.85 2.55 -10 -1.0 24 1.0 1.25 -10 -2.5 22 0.6 0.8 -10 -3 29 () typ. max VGS (V) - 0.37 TO-220NIS 0.8 1.0 20 PW-Mold 1.6 -2 20 PW-Mold -5 30 TO-220NIS -6.5 35 TO-220NIS TO-3P(N) 5 20 PW-Mold 0.36 0.5 10 2.5 12 45 TO-220NIS 0.08 0.12 10 9 57 10 130 TO-3P(N) - 0.15 10 5 - 2SK2992 1 1.5 PW-Mini 2.2 3.5 10 0.5 3 2SK2835 5 1.3 TPS 0.56 0.8 10 2.5 10 2SK2381 5 25 TO-220NIS 0.56 0.8 10 2.5 10 2SK2920 5 20 PW-Mold 0.56 0.8 10 2.5 10 8.5 30 TO-220NIS 0.26 0.4 10 5 17 2SK2965 11 35 TO-220NIS 0.15 0.26 10 5.5 30 2SK2382 15 45 TO-220NIS 0.13 0.18 10 10 40 2SK2401 15 75 TO-220FL/SM 0.13 0.18 10 10 40 2SK3176 30 150 TO-3P(N) 0.038 0.052 10 15 125 2SK3462 3 20 PW-Mold 1.2 1.7 10 1.5 12 2SK3342 4.5 20 PW-Mold 0.8 1.0 10 2.5 10 2SK2417 7.5 30 TO-220NIS 0.42 0.5 10 3.5 20 2SK2914 7.5 20 TO-220AB 0.42 0.5 10 3.5 20 13 45 TO-220NIS 0.18 0.25 10 6.5 40 2SK3497 2SK2350 2SK2508 28 ID (A) Qg typ. (nC) Package Type 18 2SK2882 DC-DC converters Monitors Motor controllers RDS(ON) VDSS (V) 150 180 200 250 2SK2598 13 60 TO-220FL/SM 0.18 0.25 10 6.5 40 2SK2993 20 100 TO-220FL/SM 0.082 0.105 10 10 100 2SK2967 30 150 2SK2995 30 90 TO-3P(N) 0.048 0.068 10 15 132 TO-3P(N)IS 0.048 0.068 10 15 132 10. -MOS V Series (VDSS = 400 V to 700 V) High-performance series for 100-V AC input-switching power supplies Features * Low-drive-power, high-speed (Qg reduced by 40%, tf by 30%) * Guaranteed VGSS = 30 V for every device in product line * Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode * Protection zener diode between gate and source Line-up Maximum Ratings RDS(ON) Applications Part Number VDSS (V) ID (A) PD (W) Package Type AC 115 V switching power supplies Ballst inverters Motor controllers 2SK3498 2SK2679 2SK2838 2SK2952 2SK2841 2SK2949 2SK3472 2SK3126 2SK2998 2SK3302 2SK3471 2SK2599 2SK2862 2SK2661 2SK2662 2SK2991 2SK2542 2SK2543 2SK2776 2SK2601 2SK2842 2SK3068 2SK2916 2SK2698 2SK2917 2SK2837 2SK3117 2SK3132 2SK3371 2SK2846 2SK2865 2SK3067 2SK2750 2SK3085 2SK2544 2SK2545 2SK2777 2SK2602 2SK2996 2SK2843 2SK2866 2SK2889 2SK2699 2SK2953 2SK2915 2SK3265 2SK3453 400 400 400 400 400 400 450 450 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 1 5.5 5.5 8.5 10 10 1 10 0.5 0.5 0.5 2 3 5 5 5 8 8 8 10 12 12 14 15 18 20 20 50 1 2 2 2 3.5 3.5 6 6 6 6 10 10 10 10 12 15 16 10 10 20 35 40 40 80 80 20 40 0.9 1.3 0.5 1.3 25 75 35 50 80 40 65 125 40 100 80 150 90 150 150 250 20 1.3 20 25 35 75 80 40 65 125 45 45 125 100 150 90 150 45 80 PW-Mold TO-220NIS TO-220FL/SM TO-220NIS TO-220AB TO-220FL/SM PW-Mold TO-220NIS LSTM TPS PW-Mini TPS TO-220NIS TO-220AB TO-220NIS TO-220FL/SM TO-220AB TO-220NIS TO-220FL/SM TO-3P(N) TO-220NIS TO-220FL/SM TO-3P(N)IS TO-3P(N) TO-3P(N)IS TO-3P(N) TO-3P(SM) TO-3P(L) PW-Mold TPS PW-Mold TO-220NIS TO-220NIS TO-220AB TO-220AB TO-220NIS TO-220FL/SM TO-3P(N) TO-220NIS TO-220NIS TO-220AB TO-220FL/SM TO-3P(N) TO-3P(N)IS TO-3P(N) TO-220NIS TO-3P(N)IS () typ. 4.2 0.84 0.84 0.4 0.4 0.4 4.0 0.48 10 10 10 2.9 2.9 1.35 1.35 1.35 0.75 0.75 0.75 0.56 0.4 0.4 0.35 0.35 0.21 0.21 0.21 0.07 6.4 4.2 4.2 4.2 1.7 1.7 0.9 0.9 0.9 0.9 0.74 0.54 0.54 0.54 0.5 0.31 0.31 0.72 0.72 max 5.5 1.2 1.2 0.55 0.55 0.55 4.6 0.65 18 18 18 3.2 3.2 1.5 1.5 1.5 0.85 0.85 0.85 1.0 0.52 0.52 0.4 0.4 0.27 0.27 0.27 0.095 9.0 5.0 5.0 5.0 2.2 2.2 1.25 1.25 1.25 1.25 1.0 0.75 0.75 0.75 0.65 0.4 0.4 1.0 1.0 VGS (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 ID (A) 0.5 3 3 5 5 5 0.5 5 0.25 0.25 0.25 1 1 2.5 2.5 2.5 4 4 4 5 6 6 7 7 10 10 10 25 0.5 1 1 1 1.8 1.8 3 3 3 3 5 5 5 5 6 8 8 5 5 Qg typ. (nC) 5.7 17 17 34 34 34 5 35 3.8 3.8 3.8 9 9 17 17 17 30 30 30 30 45 45 58 58 80 80 80 280 9 9 9 9 20 20 30 30 30 30 38 45 45 45 58 80 80 53 53 29 Power MOSFET Characteristics 11. High-Speed -MOS V Series (VDSS = 450 V to 600 V) To allow the development of high-efficiency portable equipment, Toshiba has developed two Series of high-speed Power MOSFET devices. The two series are as follows: The High-Speed Switching Series for AC adapters and switching power supplies The High-Speed Switching Series for motor controllers and inverter circuits * High-Speed Switching Series: Achieves faster switching speed than the existing -MOS V Series which are currently well-established in the marketplace (toff-switching is 38% faster). * High-Speed Diode Series: Achieves faster parasitic diode speed by using lifetime control (trr 100 ns). Line-up * MACH Series Applications Part Number AC adapters Switching power supplies 2SK3310 2SK3309 2SK3403 2SK3312 2SK3437 2SK3399 Maximum Ratings VDSS(V) ID(A) PD(W) 450 450 450 600 600 600 10 10 13 6 10 10 40 65 100 65 80 100 Package Type TO-220NIS TO-220FL/SM TO-220FL/SM TO-220FL/SM TO-220FL/SM TO-220FL/SM RDS(ON) max () 0.65 0.65 0.4 1.25 1 0.75 VGS (V) 10 10 10 10 10 10 ID (A) 5 5 6 3 5 5 Qg typ. (nC) 23 23 34 25 28 35 Equivalent Conventional Device 2SK3126 -- -- -- 2SK2996 2SK2866 VGS (V) ID (A) trr typ. (ns) 10 10 10 10 10 10 2.5 2.5 6 7 25 3 60 60 90 105 105 85 Equivalent Conventional Device 2SK2662 2SK2662 2SK2842 2SK2698 2SK3132 2SK2545 * High-speed diode series (HSD Series) line-up Applications Motor controllers Inverters Switching power supplies Part Number Maximum Ratings VDSS(V) ID(A) PD(W) 500 500 500 500 500 600 5 5 12 15 50 6 50 35 40 150 250 40 2SK3417 2SK3316 2SK3313 2SK3314 2SK3131 2SK3130 Package Type TO-220FL/SM TO-220NIS TO-220NIS TO-3P(N) TO-3P(L) TO-220NIS RDS(ON) max () 1.8 1.8 0.62 0.49 0.11 1.55 Features of MACH Series Characteristics of high-speed diode series Switching loss reduced by 40% Faster parasitic diode 2SK3313 (high speed) 2SK3310 (high speed) VDS=50V/div ID=0.5A/div ID=10A/div 0 0 VGS=5V/div PD=0.5 J/div 200ns/div 0 100ns/div 2SK3126 (conventional device) 2SK2842 (conventional device) VDS=50V/div ID=0.5A/div ID=10A/div 0 0 PD=0.5 J/div VGS=5V/div 0 100ns/div 30 200ns/div 12. -MOS III Series (VDSS = 800 V to 1000 V) High-performance, high-speed devices for 200-V AC input-switching power supplies Features * Low drive-power, high-speed devices (Qg reduced by 60%, tf reduced by 25%) * Guaranteed VGSS = 30 V. * Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode * Protection zener diode between gate and source Line-up * -MOS III typ. max VGS(V) ID(A) Qg typ. (nC) TO-220AB 3.0 3.6 10 1.5 25 75 TO-220FL/SM 3.0 3.6 10 15 25 5 45 TO-220NIS 1.9 2.2 10 3.0 34 800 5 100 TO-220FL/SM 1.9 2.2 10 3.0 34 2SK2604 800 5 125 TO-3P(N) 1.9 2.2 10 3.0 34 2SK2746 800 7 150 TO-3P(N) 1.3 1.7 10 3.5 55 2SK2606 800 8 85 TO-3P(N)IS 1.0 1.2 10 4.0 68 2SK2607 800 9 150 TO-3P(N) 1.0 1.2 10 4.0 68 2SK3301 900 1 20 PW-Mold 15 20 10 0.5 6 2SK2845 900 1 40 DP 8.0 9.0 10 0.5 15 2SK2733 900 1 60 TO-220AB 8.0 9.0 10 0.5 15 2SK2718 900 2.5 40 TO-220NIS 5.6 6.4 10 1.5 21 2SK2608 900 3 100 TO-220AB 3.73 4.3 10 1.5 25 2SK2700 900 3 40 TO-220NIS 3.7 4.3 10 1.5 25 2SK2719 900 3 125 TO-3P(N) 3.7 4.3 10 1.5 25 2SK2610 900 5 150 TO-3P(N) 2.3 2.5 10 3.0 45 2SK2717 900 5 45 TO-220NIS 2.3 2.5 10 3.0 45 2SK3700 900 5 45 TO-220NIS 2.0 2.5 10 2.5 28 2SK2749 900 7 150 TO-3P(N) 1.1 1.4 10 3.5 55 2SK2847 900 8 85 TO-3P(N)IS 1.05 1.25 10 4.0 58 2SK3017 900 8.5 90 TO-3P(N)IS 1.2 1.4 10 4.0 70 2SK2611 900 9 150 TO-3P(N) 1.05 1.25 10 4.0 58 2SK2968 900 10 150 TO-3P(N) 1.4 1.7 10 4.0 70 2SK2613 1000 8 150 TO-3P(N) 1.4 1.7 10 8.0 65 RDS(ON) () Maximum Ratings Part Number VDSS (V) ID (A) PD (W) 2SK2603 800 3 100 2SK2883 800 3 2SK2605 800 2SK2884 Package Type * -MOS IV VDSS (V) ID (A) PD (W) max VGS(V) ID(A) Qg typ. (nC) 2SK3633 800 7 150 TO-3P(N) 1.35 1.7 10 3.5 35 2SK3473 900 9 150 TO-3P(N) 1.3 1.6 10 4.0 38 RDS(ON) () Maximum Ratings Part Number Package Type typ. 31 Power Modules Power modules enable high-density mounting and are the simples of all multi-chip devices in structural terms. Use of these modules enables the construction of compact power supplies for electronic equipment. Line-up * S-10M Series (4in1) Maximum Ratings Polarity and Circuit Configuration N-ch x 4 P-ch x 4 N-ch x 2 + P-ch x 2 Part Number MP4210 MP4209 MP4211 MP4208 MP4212 VDSS (V) ID (A) 60 100 -60 -60 60 -60 5 3 -5 -5 5 -5 Electrical Characteristics (Ta = 25C) PT (Ta = 25C) (W) 4 4 4 4 4 RDS(ON) () (typ.) 0.12 0.28 0.16 0.20 0.12 0.16 4-V Drive (max) 0.16 0.35 0.19 0.30 0.16 0.19 VGS (V) ID (A) 10 10 -10 -10 10 -10 2.5 2.0 -2.5 -2.5 2.5 -2.5 * S-12M Series (4in1, 6in1) Maximum Ratings Polarity and Circuit Configuration N-ch x 2 + P-ch x 2 with FB-Di N-ch x 4 N-ch x 3 + P-ch x 3 Electrical Characteristics (Ta = 25C) VDSS (V) ID (A) PT (Ta = 25C) (W) MP4411 100 3 4.4 MP4412 100 5 MP4410 60 60 -60 5 5 -5 Part Number MP6404 RDS(ON) () 4-V Drive (max) VGS (V) ID (A) 0.28 0.35 10 2.0 4.4 0.17 0.23 10 2.5 4.4 0.12 0.12 0.16 0.16 0.16 0.19 10 10 -10 2.5 2.5 -2.5 4.4 (typ.) * F-12M Series (4in1, 6in1) Maximum Ratings 32 Polarity and Circuit Configuration Part Number N-ch x 2 + P-ch x 2 with FB-Di MP4711 Electrical Characteristics (Ta = 25C) VDSS (V) ID (A) PT (Ta = 25C) (W) 100 5 36 RDS(ON) () (typ.) 0.17 4-V Drive (max) VGS (V) ID (A) 0.23 10 2.5 Power MOSFET Product List Main Characteristics Part Number Series Package Type VDSS (V) ID (A) RDS(ON) max () Main Characteristics Page Part Number Series Package Type VDSS (V) ID (A) RDS(ON) max () Page 2SJ200 -MOS TO-3P(N) - 180 - 10 0.83 2SK1486 -MOS .5 TO-3P(L) 300 32 0.095 2SJ201 -MOS TO-3P(N) - 200 - 12 0.63 2SK1489 -MOS .5 TO-3P(L) 1000 12 1.0 2SJ304 2 TO-220NIS - 60 - 14 0.12 2SK1529 -MOS TO-3P(N) 180 10 0.83 2 - 60 - 14 0.12 2SK1530 -MOS TO-3P(N) 200 12 0.63 - 180 -1 5.0 2SK1544 -MOS .5 TO-3P(L) 500 25 0.2 - 60 -5 0.25 2SK1930 -MOS .5 TO-220FL/SM 1000 4 3.8 P 25 2SK2013 -MOS TO-220NIS 180 1 5.0 2SK2162 -MOS PW-Mold 180 1 5.0 60 50 0.017 P 24 L --MOS 2SJ312 L --MOS TO-220FL/SM 2SJ313 -MOS TO-220NIS 2SJ315 2 L --MOS 2 PW-Mold 2SJ334 L --MOS TO-220NIS 2SJ338 -MOS PW-Mold 2 TO-220NIS 2 PW-Mini 2SJ349 L --MOS 2SJ360 L --MOS 2SJ377 2SJ378 2SJ380 2SJ401 2 L --MOS 2 L --MOS 2 L --MOS 2 L --MOS 2 2SJ402 L --MOS 2SJ407 -MOS PW-Mold TPS TO-220NIS TO-220FL/SM TO-220FL/SM TO-220NIS - 60 - 30 - 180 -1 - 60 - 20 - 60 -1 - 60 - 60 - 100 - 60 - 60 - 200 2 TO-220FL/SM - 100 2 -5 -5 - 12 - 20 - 30 -5 - 16 2SK2173 L --MOS TO-3P(N) 0.73 P 25 2SK2200 L2 --MOS 0.19 0.19 0.21 0.045 0.038 1.0 P 25 P 25 P 25 P 25 P 25 P 28 2SK2201 2SK2229 2SK2231 TPS 100 3 0.35 P 24 PW-Mold 100 3 0.35 P 24 2 TPS 60 5 0.16 P 24 2 PW-Mold 60 5 0.16 P 24 2 L --MOS L --MOS L --MOS 2SK2232 L --MOS TO-220NIS 60 25 0.046 P 24 2SK2233 L2 --MOS TO-3P(N) 60 45 0.03 P 24 2SK2266 L2 --MOS TO-220FL/SM 60 45 0.03 P 24 0.011 P 24 2 TO-3P(L) 0.19 P 25 -MOS .5 TO-220NIS -5 0.2 P 25 2SK2311 L2 --MOS -9 0.8 2SK2312 L2 --MOS 2SJ438 - 60 -5 2SJ439 -MOS PW-Mold - 16 2SJ440 -MOS TO-3P(N)IS - 180 - 18 0.21 0.09 P 25 2 L --MOS TO-220NIS - 100 0.045 P 25 2SK2274 L --MOS TO-220NIS 2 2SK2267 L --MOS L2--MOS 5.0 P 25 2SJ412 2SJ464 0.038 2SK2313 60 60 700 5 TO-220FL/SM 60 25 0.046 P 24 1.7 TO-220NIS 60 45 0.017 P 24 2 TO-3P(N) 60 60 0.011 P 24 2 L --MOS 2SJ465 -MOS PW-Mini - 16 -2 0.71 P 25 2SK2314 L --MOS TO-220AB 100 27 0.085 P 24 2SJ507 L2--MOS LSTM - 60 -1 0.7 P 25 2SK2350 -MOS TO-220NIS 200 8.5 0.4 P 28 60 45 0.017 P 24 2SJ508 2SJ509 PW-Mini - 100 -1 1.9 P 25 2SK2376 L --MOS TO-220FL/SM 2 LSTM - 100 -1 1.9 P 25 2SK2381 -MOS TO-220NIS 200 5 0.8 P 28 2 PW-Mini - 30 -2 0.45 P 25 2SK2382 -MOS TO-220NIS 200 15 0.18 P 28 L --MOS L --MOS 2SJ511 L --MOS 2SJ512 -MOS 2SJ516 -MOS TO-220NIS 2SJ525 L2 --MOS TPS TO-220NIS - 250 -5 - 250 - 6.5 - 30 -5 2SJ537 L2 --MOS 2SJ567 -MOS PW-Mold - 200 - 2.5 2SJ610 -MOS PW-Mold - 250 2SJ618 -MOS TO-3P(N) - 180 2SJ619 LSTM - 50 -5 P 28 2SK2385 L --MOS TO-220NIS 60 36 0.03 P 24 TO-220NIS 100 20 0.085 P 24 0.8 P 28 2SK2391 L2 --MOS 0.12 P 25 2SK2398 L2 --MOS 0.19 P 25 2SK2399 TO-3P(N) 60 45 0.03 P 24 2 PW-Mold 100 5 0.23 P 24 2 L --MOS P 28 2SK2400 L --MOS TPS 100 5 0.23 P 24 -2 2.55 P 28 2SK2401 -MOS TO-220FL/SM 200 15 0.18 P 28 - 10 0.37 P 28 2SK2417 -MOS TO-220NIS 250 7.5 0.5 P 28 60 50 0.018 P 24 0.046 P 26 2 2 TFP - 100 - 16 0.21 P 18 2SK2445 L --MOS TO-3P(N) 2 - 100 - 18 0.09 P 18 2SK2466 U-MOS TO-220NIS 100 30 0.17 P 26 2SK2467 -MOS TO-3P(N)IS 180 9 0.8 3.8 2SK2493 -MOS PW-Mold 16 5 0.1 P 25 1.8 2SK2507 L --MOS TO-220NIS 50 25 0.046 P 24 -MOS TO-220NIS 250 13 0.25 P 28 L --MOS L --MOS TFP 2SJ668 U-MOS PW-Mold - 60 -5 2SK1119 -MOS .5 TO-220AB 1000 4 2SK1120 -MOS .5 2SK1359 -MOS .5 TO-3P(N) 2SK1365 -MOS .5 TO-3P(N)IS 2SK1382 1.25 2 2.0 2SJ620 2SK1381 2 2 TO-3P(N) 1000 8 2 100 5 3.8 2SK2508 1000 7 1.8 2SK2542 -MOS TO-220AB 500 8 0.85 P 29 2 TO-3P(N) 100 50 0.032 2SK2543 -MOS TO-220NIS 500 8 0.85 P 29 2 TO-3P(L) 100 60 0.02 2SK2544 -MOS TO-220AB 600 6 1.25 P 29 L --MOS L --MOS 33 Power MOSFET Product List Main Characteristics Part Number Package Type 2SK2545 -MOS TO-220NIS 2SK2549 -MOS PW-Mini 2SK2550 VDSS (V) ID (A) 600 6 16 2 Page Part Number 1.25 P 29 2SK2842 0.29 P 25 2SK2843 RDS(ON) max () Main Characteristics Series Package Type VDSS (V) ID (A) -MOS TO-220NIS 500 12 0.52 P 29 -MOS TO-220NIS 600 10 0.75 P 29 30 35 0.02 P 24 2 RDS(ON) max () Page 2 TO-3P(N) 50 45 0.03 P 24 2SK2844 L --MOS TO-220AB 2 50 50 0.011 P 24 2SK2845 -MOS DP 900 1 9.0 P 31 250 13 0.25 P 28 2SK2846 -MOS TPS 600 2 5.0 P 29 L --MOS 2SK2551 L --MOS TO-3P(N) 2SK2598 -MOS TO-220FL/SM 2SK2599 -MOS TPS 500 2 3.2 P 29 2SK2847 -MOS TO-3P(N)IS 900 8 1.4 P 31 2SK2601 -MOS TO-3P(N) 500 10 1.0 P 29 2SK2862 -MOS TO-220NIS 500 3 3.2 P 29 2SK2602 -MOS TO-3P(N) 600 6 1.25 P 29 2SK2865 -MOS PW-Mold 600 2 5.0 P 29 2SK2603 -MOS TO-220AB 800 3 3.6 P 31 2SK2866 -MOS TO-220AB 600 10 0.75 P 29 2SK2604 -MOS TO-3P(N) 800 5 2.2 P 31 2SK2882 -MOS TO-220NIS 150 18 0.12 P 28 2SK2605 -MOS TO-220NIS 800 5 2.2 P 31 2SK2883 -MOS TO-220FL/SM 800 3 3.6 P 31 2SK2606 -MOS TO-3P(N)IS 800 8.5 1.2 P 31 2SK2884 -MOS TO-220FL/SM 800 5 2.2 P 31 2SK2607 -MOS TO-3P(N) 800 9 1.2 P 31 2SK2886 L --MOS TO-220NIS 50 45 0.02 P 24 2SK2608 -MOS TO-220AB 900 3 4.3 P 31 2SK2889 -MOS TO-220FL/SM 600 10 0.75 P 29 2SK2610 -MOS TO-3P(N) 900 5 2.5 P 31 2SK2914 -MOS TO-220AB 250 7.5 0.5 P 28 2SK2611 -MOS TO-3P(N) 900 9 1.4 P 31 2SK2915 -MOS TO-3P(N) 600 16 0.4 P 29 2SK2613 -MOS TO-3P(N) 1000 8 2SK2614 L2 --MOS DP 50 20 2SK2615 L2 --MOS PW-Mini 60 2SK2661 -MOS TO-220AB 2SK2662 -MOS 2SK2679 2 1.7 P 32 2SK2916 -MOS TO-3P(N)IS 500 14 0.4 P 29 0.046 P 24 2SK2917 -MOS TO-3P(N)IS 500 18 0.27 P 29 2 0.3 P 24 2SK2920 -MOS PW-Mold 200 20 0.8 P 28 500 5 1.5 P 29 2SK2949 -MOS TO-220FL/SM 400 10 0.55 P 29 TO-220NIS 500 5 1.5 P 29 2SK2952 -MOS TO-220NIS 400 8.5 0.55 P 29 -MOS TO-220NIS 400 5.5 1.2 P 29 2SK2953 -MOS TO-3P(N)IS 600 15 0.4 P 29 2SK2698 -MOS TO-3P(N) 500 15 0.4 P 29 2SK2699 -MOS TO-3P(N) 600 12 0.65 P 29 2SK2700 -MOS TO-220NIS 900 3 4.3 P 29 2SK2717 -MOS TO-220NIS 900 5 2.5 P 29 2SK2964 2SK2718 -MOS TO-220NIS 900 2.5 6.4 P 29 2SK2719 -MOS TO-3P(N) 900 3 4.3 P 29 2SK2733 -MOS TO-220AB 900 1 9.0 P 29 2SK2744 L2 --MOS TO-3P(N) 50 45 0.02 2 2 LSTM 60 2 0.27 P 24 2 LSTM 100 1 0.7 P 24 2 PW-Mini 100 1 0.7 P 24 2 L --MOS PW-Mini 30 2 0.18 P 24 2SK2965 -MOS TO-220NIS 200 11 0.26 P 28 2SK2967 -MOS TO-3P(N) 250 30 0.068 P 28 2SK2968 -MOS TO-3P(N) 900 10 1.25 P 29 P 24 2SK2985 U-MOS TO-220NIS 60 45 5.8 P 26 0.0095 P 24 2SK2986 U-MOS TO-220FL/SM 60 55 5.8 P 26 1.7 P 31 2SK2987 U-MOS TO-3P(N) 60 70 5.8 P 26 50 5 0.15 P 22 2SK2961 2SK2962 2SK2963 L --MOS L --MOS L --MOS 2SK2745 L --MOS TO-3P(N) 50 50 2SK2746 -MOS TO-3P(N) 800 7 2SK2749 -MOS TO-3P(N) 900 7 2.0 P 31 2SK2989 L --MOS LSTM 2SK2750 -MOS TO-220NIS 600 3.5 2.2 P 29 2SK2991 -MOS TO-220FL/SM 500 5 1.5 P 29 2SK2776 -MOS TO-220FL/SM 500 8 0.85 P 29 2SK2992 -MOS PW-Mini 200 1 3.5 P 28 2SK2777 -MOS TO-220FL/SM 600 6 1.25 P 29 2SK2993 -MOS TO-220FL/SM 250 20 0.105 P 28 P 24 2SK2995 -MOS TO-3P(N)IS 250 30 0.068 P 28 0.085 P 24 2SK2996 -MOS TO-220NIS 600 10 1.0 P 29 0.8 P 28 2SK2998 -MOS LSTM 500 0.5 18 P 29 -MOS TO-3P(N)IS 900 8.5 1.25 P 31 50 45 0.03 P 24 600 2 5.0 P 29 2SK2782 34 Series 2 L --MOS 2 DP 60 20 0.055 2 2SK2789 L --MOS TO-220FL/SM 100 27 2SK2835 -MOS TPS 200 5 2SK2837 -MOS TO-3P(N) 500 20 0.27 P 29 2SK3017 2SK2838 -MOS TO-220FL/SM 400 5.5 1.2 P 29 2SK3051 L2 --MOS TO-220FL/SM 2SK2841 -MOS TO-220AB 400 10 0.55 P 29 2SK3067 -MOS TO-220NIS Main Characteristics Part Number Series Package Type VDSS (V) ID (A) RDS(ON) max () Page Part Number Main Characteristics Series Package Type VDSS (V) ID (A) RDS(ON) max () Page 2SK3068 -MOS TO-220FL/SM 500 12 0.52 P 29 2SK3440 U-MOS TFP 60 50 0.008 P 18 2SK3084 U-MOS TO-220FL/SM 100 30 0.046 P 26 2SK3441 U-MOS TFP 60 75 0.0058 2SK3085 -MOS TO-220AB 600 3.5 2.2 P 29 2SK3442 U-MOS TFP 100 45 0.02 P 18 30 40 0.03 P 24 2SK3443 -MOS TFP 150 30 0.055 P 18 2SK3089 2 L --MOS TO-220FL/SM 2SK3090 L --MOS TO-220FL/SM 30 45 0.02 P 24 2SK3444 -MOS TFP 200 25 0.082 P 18 2SK3117 -MOS TO-3P(SM) 500 20 0.27 P 29 2SK3445 -MOS TFP 250 20 0.105 P 18 2SK3125 L2 --MOS TO-3P(SM) 30 70 0.007 P 24 2SK3453 -MOS TO-3P(N)IS 700 10 1.0 P 29 2SK3126 -MOS TO-220NIS 450 10 0.65 P 29 2SK3462 -MOS PW-Mold 250 3 1.7 P 28 2SK3127 L2 --MOS TO-220FL/SM 30 45 0.012 P 24 2SK3466 -MOS TFP 500 5 1.5 P 16 2 2SK3128 L --MOS TO-3P(N) 30 60 0.012 P 24 2SK3471 -MOS PW-Mini 500 0.5 18 P 29 2SK3129 -MOS TO-3P(N) 50 60 0.007 2SK3472 -MOS PW-Mold 450 1 4.6 P 29 2SK3130 -MOS TO-220NIS 600 6 1.55 P 30 2SK3473 -MOS TO-3P(N) 900 9 1.6 P 31 2SK3131 -MOS TO-3P(L) 500 50 0.11 P 30 2SK3497 -MOS TO-3P(N) 180 10 0.15 P 28 2SK3132 -MOS TO-3P(L) 500 50 0.095 P 29 2SK3498 -MOS PW-Mold 400 1 5.5 P 29 2SK3176 -MOS TO-3P(N) 200 30 0.052 P 28 2SK3499 -MOS TFP 400 10 0.55 P 18 2SK3205 -MOS PW-Mold 2SK3506 -MOS TO-3P(N) 30 45 0.02 2SK3236 U-MOS 2SK3265 -MOS 2SK3301 2 150 5 0.5 P 28 TO-220NIS 60 35 0.02 P 26 2SK3538 -MOS TFP 500 8 0.85 P 18 TO-220NIS 700 10 1.0 P 29 2SK3543 -MOS TO-220NIS 450 2 2.45 -MOS PW-Mold 900 1 20 P 31 2SK3544 -MOS TFP 450 13 0.4 P 18 2SK3302 -MOS TPS 500 0.5 18 P 29 2SK3561 -MOS TO-220SIS 500 8 0.85 P 22 2SK3309 MACH TO-220FL/SM 450 10 0.65 P 30 2SK3562 -MOS TO-220SIS 600 6 1.25 P 22 2SK3310 MACH TO-220NIS 450 10 0.65 P 30 2SK3563 -MOS TO-220SIS 500 5 1.5 P 22 2SK3312 -MOS TO-220FL/SM 600 6 1.25 P 30 2SK3564 -MOS TO-220SIS 900 3 4.3 P 22 2SK3313 -MOS TO-220NIS 500 12 0.62 P 30 2SK3565 -MOS TO-220SIS 900 5 2.5 P 22 2SK3314 -MOS TO-3P(N) 500 15 0.49 P 30 2SK3566 -MOS TO-220SIS 900 2.5 6.4 P 22 2SK3316 -MOS TO-220NIS 500 5 1.8 P 30 2SK3567 -MOS TO-220SIS 600 3.5 2.2 P 22 2SK3342 -MOS PW-Mold 250 4.5 1.0 P 28 2SK3568 -MOS TO-220SIS 500 12 0.52 P 22 2SK3371 -MOS PW-Mold 600 1 9.0 P 29 2SK3569 -MOS TO-220SIS 600 10 0.75 P 22 2SK3373 -MOS PW-Mold 500 2 3.2 2SK3633 -MOS TO-3P(N) 800 7 1.3 P 31 2SK3374 -MOS TPS 450 1 4.6 2SK3662 U-MOS TO-220NIS 60 35 0.0095 P 26 2SK3387 L --MOS TFP 150 18 0.012 P 18 2SK3667 -MOS TO-220SIS 600 7.5 1.0 P 22 2SK3388 -MOS TFP 250 20 0.105 P 18 2SK3669 -MOS PW-Mold 100 10 0.125 P 27 2SK3389 U-MOS TFP 30 75 0.005 P 18 2SK3670 -MOS LSTM 150 0.67 1.7 2SK3397 U-MOS TFP 30 70 0.006 P 18 2SK3742 -MOS TO-220SIS 900 5 2.5 P 22 2SK3398 -MOS TFP 500 12 0.52 P 18 2SK3757 -MOS TO-220SIS 450 2 2.45 P 22 2SK3399 MACH TO-220FL/SM 600 10 0.75 P 30 2SK3767 -MOS TO-220SIS 600 2 4.5 P 22 2SK3403 MACH TO-220FL/SM 450 13 0.4 P 30 2SK3797 -MOS TO-220SIS 600 13 0.49 P 22 2SK3407 -MOS TO-220NIS 450 10 0.65 2SK3798 -MOS TO-220SIS 900 3.5 3.5 P 22 2SK3417 -MOS TO-220FL/SM 500 5 1.8 P 30 2SK3799 -MOS TO-220SIS 900 9 1.5 P 22 2SK3437 MACH TO-220FL/SM 600 10 1.0 P 30 2SK3842 U-MOS TFP 60 75 0.0058 P 18 2SK3438 -MOS TFP 600 10 1.0 P 18 TPC6001 U-MOS VS-6 20 6 0.03 P 17 2SK3439 U-MOS TFP 30 75 0.005 P 18 TPC6002 U-MOS VS-6 30 6 0.03 P 17 2 35 Power MOSFET Product List Part Number Main Characteristics Series Package Type VDSS (V) ID (A) RDS(ON) max () Page Part Number Main Characteristics Series Package Type VDSS (V) ID (A) RDS(ON) max () Page TPC6003 U-MOS VS-6 30 6 0.024 P 17 TPC8402 U-MOS SOP-8 - 30/30 - 4.5/5 35/50 P 14 TPC6004 U-MOS VS-6 20 6 0.024 P 17 TPC8403 U-MOS SOP-8 - 30/30 - 4.5/6 55/33 P 14 TPC6005 U-MOS VS-6 30 6 0.028 P 17 TPC8A01 U-MOS SOP-8 30/30 6/8.5 0.025/0.018 P 12 30 35 0.0066 P 13 30 40 0.0046 P 13 TPC6101 U-MOS VS-6 - 20 - 4.5 0.06 P 17 TPC6102 U-MOS VS-6 - 30 - 4.5 0.06 P 17 TPC6103 U-MOS VS-6 - 12 - 4.5 0.035 P 17 Ultra high-speed TPCA8003-H U-MOS SOP Advance Ultra high-speed TPCA8004-H U-MOS SOP Advance Ultra high-speed TPCA8005-H U-MOS SOP Advance 30 27 0.009 P 13 TPC6104 U-MOS VS-6 - 20 - 4.5 0.04 P 17 TPCA8101 U-MOS SOP Advance - 30 - 40 0.007 P 13 TPC6105 U-MOS VS-6 - 20 - 2.7 0.11 P 17 TPCA8102 U-MOS SOP Advance - 30 - 40 0.006 P 13 TPC6201 U-MOS VS-6 30 2.5 0.095 P 17 TPCA8103 U-MOS SOP Advance - 30 - 40 0.0042 P 13 TPC8001 -MOS SOP-8 30 7 0.02 P 14 TPCS8004 -MOS TSSOP-8 200 1.3 0.8 P 15 TPC8003 U-MOS SOP-8 30 13 0.007 P 14 TPCS8006 -MOS TSSOP-8 250 1.1 1 P 15 TPC8004 -MOS SOP-8 30 5 0.05 P 14 TPCS8007 -MOS TSSOP-8 200 1.9 0.5 P 15 SOP-8 30 7 0.027 P 14 TPCS8008 -MOS TSSOP-8 250 1.8 0.55 P 15 SOP-8 30 11 0.016 P 14 TPCS8101 U-MOS TSSOP-8 - 30 - 6 0.025 P 15 TPC8012-H -MOS SOP-8 200 1.8 0.4 P 14 TPCS8102 U-MOS TSSOP-8 - 20 - 6 0.02 P 15 U-MOS SOP-8 30 11 0.014 P 14 TPCS8104 U-MOS TSSOP-8 - 30 - 11 0.012 P 15 - 11 0.0135 P 15 High-speed TPC8006-H U-MOS High-speed TPC8010-H U-MOS TPC8014 TPC8105-H High-speed U-MOS High-speed U-MOS Ultra high-speed U-MOS Ultra high-speed U-MOS Ultra high-speed U-MOS High-speed U-MOS High-speed U-MOS TPC8107 U-MOS SOP-8 - 30 - 13 0.0007 P 14 TPCS8212 U-MOS TSSOP-8 20 TPC8108 U-MOS SOP-8 - 30 - 11 0.0013 P 14 TPCS8302 U-MOS TSSOP-8 - 20 - 5 0.0035 P 15 TPC8109 U-MOS SOP-8 - 30 - 10 0.02 P 14 TPCS8303 U-MOS TSSOP-8 - 20 - 5 0.021 P 15 TPC8110 U-MOS SOP-8 - 40 -8 0.025 P 14 TPCF8001 U-MOS VS-8 30 TPC8111 U-MOS SOP-8 - 30 - 11 0.012 P 14 TPCF8101 U-MOS VS-8 - 12 - 6 0.028 P 17 U-MOS VS-8 - 20 - 6 0.03 P 17 - 2.7 0.11 P 17 TPC8015-H TPC8016-H TPC8017-H TPC8018-H TPC8020-H TPC8104-H 30 13 0.008 P 14 TPCS8105 U-MOS TSSOP-8 - 30 SOP-8 30 15 0.0057 P 14 TPCS8204 U-MOS TSSOP-8 20 6 0.017 P 15 SOP-8 30 15 0.0066 P 14 TPCS8205 U-MOS TSSOP-8 20 5 0.045 P 15 SOP-8 30 18 0.0046 P 14 TPCS8208 U-MOS TSSOP-8 20 6 0.017 P 15 SOP-8 30 13 0.009 P 14 TPCS8209 U-MOS TSSOP-8 20 5 0.03 P 15 SOP-8 - 30 -5 0.0065 P 14 TPCS8210 U-MOS TSSOP-8 20 5 0.03 P 15 SOP-8 - 30 -7 0.04 P 14 TPCS8211 U-MOS TSSOP-8 20 6 0.024 P 15 6 0.024 P 15 SOP-8 7 0.0025 P 17 TPC8112 U-MOS SOP-8 - 30 - 13 0.006 P 14 TPCF8102 TPC8113 U-MOS SOP-8 - 30 - 11 0.01 P 14 TPCF8103 U-MOS VS-8 - 20 TPC8114 U-MOS SOP-8 - 30 - 18 0.0045 P 14 TPCF8104 U-MOS VS-8 - 30 TPC8115 U-MOS SOP-8 - 20 - 10 0.01 P 14 TPCF8201 U-MOS VS-8 20 TPC8203 U-MOS SOP-8 30 6 0.021 P 14 TPCF8301 U-MOS VS-8 - 20 TPC8206 U-MOS SOP-8 60 7 0.05 P 14 TPCF8302 U-MOS VS-8 - 20 - 3 0.0059 P 17 TPC8207 U-MOS SOP-8 20 6 0.02 P 14 TPCF8303 U-MOS VS-8 - 20 - 3 0.0059 P 17 TPC8208 U-MOS SOP-8 20 5 0.05 P 14 TPCF8402 U-MOS VS-8 - 30/30 TPC8209 U-MOS SOP-8 30 5 0.04 P 14 TPCF8A01 U-MOS VS-8 20 TPC8210 U-MOS SOP-8 30 8 0.015 P 14 TPCF8B01 U-MOS VS-8 - 20 - 2.7 0.11 P 17 30 4.2 0.05 P 17 - 6 0.0028 P 17 3 0.049 P 17 - 2.7 0.11 - 3.2/4 0.11/0.049 3 0.049 P 17 P 17 P 17 TPC8211 U-MOS SOP-8 30 5.5 0.036 P 14 TPCP8201 U-MOS PS-8 TPC8303 U-MOS SOP-8 - 30 - 4.5 0.035 P 14 TPCP8401 U-MOS PS-8 - 30/30 - 3.4/4.2 0.048/0.072 P 17 TPC8305 U-MOS SOP-8 - 20 -5 0.03 P 14 TPCP8402 U-MOS PS-8 - 12/20 - 5.5/0.1 0.038/3 P 17 TPC8401 U-MOS SOP-8 - 30/30 35/21 P 14 TPCP8J01 U-MOS PS-8 - 32/50 P 17 36 - 4.5/6 - 6/0.1 0.035 Power MOSFET Superseded Products The product number in the left-hand column below are soon to be superseded. When ordering, please choose from among the recommended products in the right-hand column. Superseded Products Superseded Products Electrical Characteristics VDSS ID RDS(ON) (V) (A) max() Package Type 2SK2057 500 20 0.34 TO-3P(N) 2SK2837 500 20 0.27 TO-3P(N) 2SK2235 250 2 2 PW-Mold 2SK3462 250 3 1.7 PW-Mold 2SK2741 60 5 0.16 SP 2SK2231 60 5 0.16 PW-Mold 2SK2742 100 3 0.35 SP 2SK2201 100 3 0.35 PW-Mold 2SK2836 600 1 9 SP 2SK3371 600 1 9 PW-Mold 2SK2839 30 10 0.04 SP TPCF8001 30 7 0.023 VS-8 2SK2985 60 45 0.0058 TO-220NIS 2SK3844 60 45 0.0058 TO-220NIS 2SK2986 60 55 0.0058 TO-220FL/SM 2SK3844 60 45 0.0058 TO-220NIS 2SK2987 60 70 0.0058 TO-3P(N) 2SK3845 60 70 0.0058 TO-3P(N) TPC8005-H 30 11 0.016 SOP-8 TPC8010-H 30 11 0.016 SOP-8 TPC8102 - 30 -6 0.04 SOP-8 TPC8105-H - 30 -7 0.04 SOP-8 TPC8201 30 5 0.05 SOP-8 TPC8209 30 5 0.05 SOP-8 TPC8204 20 6 0.02 SOP-8 TPC8207 20 6 0.02 SOP-8 TPCS8201 20 5 0.03 TSSOP-8 TPCS8209 20 5 0.03 TSSOP-8 TPCS8206 20 5 0.03 TSSOP-8 TPCS8210 20 5 0.03 TSSOP-8 TPC8202 20 5 0.05 SOP-8 TPC8208 20 5 0.05 SOP-8 Part Number Part Number Electrical Characteristics VDSS ID RDS(ON) (V) (A) max() Package Type TPC8106-H - 30 -8 0.02 SOP-8 TPC8109 - 30 - 10 0.02 SOP-8 TPC8007-H 30 13 0.017 SOP-8 TPC8009-H 30 13 0.01 SOP-8 TPCS8203 20 6 0.045 TSSOP-8 TPCS8211 20 6 0.024 TSSOP-8 TPC8103 - 30 - 11 0.013 SOP-8 TPC8108 - 30 - 11 0.013 SOP-8 TPC8002 30 11 0.014 SOP-8 TPC8014 30 11 0.014 SOP-8 TPC8207 20 5 0.024 TSSOP-8 TPCS8212 20 6 0.024 TSSOP-8 : Under development 37 Power MOSFET Final-Phase and Discontinued Products (1) Final-Phase Products Part Number 2SJ147 2SJ1347 2SK794 2SK1349 2SK1488 2SK1652 2SK1720 2SK1854 2SK1856 2SK1864 2SK1882 2SK1915 2SK1997 2SK1998 2SK2387 38 Recommended Replacement Products 2SJ304 2SK2314 2SK2610 2SK2391 2SK2601 2SK2698 2SK2266 2SK2952 2SK2698 2SK2776 2SK2232 2SK2777 2SK2385 2SK2233 2SK2542 Part Number TPC8005-H TPC8007-H TPC8102 TPC8103 TPC8106-H TPC8201 TPC8202 TPC8204 TPCS8201 TPCS8203 TPCS8206 TPCS8207 Recommended Replacement Products TPC8010-H TPC8009-H TPC8105-H TPC8111/TPC8108 TPC8109 TPC8209 TPC8208 TPC8207 TPCS8209 TPCS8211 TPCS8210 TPCS8212 (2) Discontinued Products Part Number 2SJ91 2SJ92 2SJ123 2SJ124 2SJ126 2SJ183 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ315 2SK271 2SK272 2SK324 2SK325 2SK355 2SK356 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK442 2SK447 2SK525 2SK526 2SK527 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673 2SK674 2SK678 2SK693 2SK694 2SK708 Recommended Replacement Products 2SJ200 2SJ200 2SJ304 2SJ304 2SJ304 2SJ377 2SJ312 2SJ360 2SJ377 2SJ349 2SJ401 2SJ377 2SK1529 2SK1529 2SK2698 2SK2698 2SK387 2SK388 2SK2381 2SK2417 2SK2698 2SK2698 2SK2882 2SK2508 2SK1529 2SK2232 2SK2662 2SK2662 2SK2662 2SK2662 2SK2961 2SK2232 2SK2508 2SK2382 2SK2417 2SK2232 2SK2662 2SK2662 2SK2662 2SK2662 2SK2232 2SK2733 2SK2719 2SK2610 - - 2SK1641 2SK2882 2SK2601 2SK2601 2SK2232 2SK2232 2SK2232 2SK2698 2SK2698 2SK2698 2SK2698 Part Number Recommended Replacement Products 2SK788 2SK789 2SK790 2SK791 2SK792 2SK793 2SK849 2SK850 2SK851 2SK856 2SK857 2SK858 2SK888 2SK889 2SK890 2SK891 2SK892 2SK893 2SK894 2SK895 2SK896 2SK942 2SK943 2SK944 2SK945 2SK1029 2SK1078 2SK1112 2SK1113 2SK1114 2SK1115 2SK1116 2SK1117 2SK1118 2SK1124 2SK1213 2SK1251 2SK1252 2SK1333 2SK1344 2SK1346 2SK1348 2SK1350 2SK1351 2SK1352 2SK1356 2SK1357 2SK1358 2SK1362 2SK1363 2SK1377 2SK1378 2SK1379 2SK1380 2SK1487 2SK1513 2SK1531 2SK2698 2SK2698 2SK2698 2SK2608 2SK2608 2SK2610 2SK2233 2SK2466 2SK2967 2SK2385 2SK2233 2SK2750 2SK2350 2SK2314 2SK2350 2SK2382 2SK2662 2SK2386 2SK2542 2SK2601 2SK2695 2SK2232 2SK2232 2SK2967 2SK2599 2SK2698 2SK2615 2SK2231 2SK2201 2SK2232 2SK2232 2SK2232 2SK2544 2SK2545 2SK2233 2SK2602 2SK2231 2SK2201 2SK2698 2SK2232 2SK2232 2SK2391 2SK2382 2SK2662 2SK2543 2SK2700 2SK2610 2SK2611 2SK2610 2SK2847 2SK2679 2SK2841 2SK2173 2SK2267 2SK2601 2SK2601 2SK2698 Part Number 2SK1542 2SK1574 2SK1600 2SK1601 2SK1602 2SK1603 2SK1641 2SK1642 2SK1643 2SK1649 2SK1650 2SK1651 2SK1653 2SK1692 2SK1717 2SK1719 2SK1721 2SK1722 2SK1723 2SK1745 2SK1746 2SK1766 2SK1767 2SK1768 2SK1769 2SK1792 2SK1805 2SK1855 2SK1858 2SK1865 2SK1879 2SK1913 2SK1927 2SK1928 2SK1929 2SK2030 2SK2038 2SK2039 2SK2056 2SK2077 2SK2078 2SK2088 2SK2089 2SK2107 2SK2149 2SK2150 2SK2222 2SK2236 2SK2237 2SK2319 2SK2320 2SK2351 2SK2352 2SK2386 2SK2388 2SK2402 Recommended Replacement Products 2SK2376 2SK2542 2SK2603 2SK2608 2SK2603 2SK2718 2SK2993 2SK2952 2SK2717 2SK2610 2SK2719 2SK2601 2SK2312 2SK2749 2SK2615 2SK2231 2SK2991 2SK2991 2SK2699 2SK2837 2SK2865 2SK2417 2SK2750 2SK2614 2SK2599 2SK2376 2SK2543 2SK2698 2SK2883 2SK2776 2SK2398 2SK2750 2SK2789 2SK2789 2SK2884 2SK2231 2SK2604 2SK2610 2SK2605 2SK2746 2SK2607 2SK2401 2SK2884 2SK2401 2SK2601 2SK2698 2SK2604 2SK2662 2SK2543 2SK2746 2SK2607 2SK2544 2SK2545 2SK2661 2SK2750 2SK2750 39 Package List 1. Compact Surface-Mount Packages To meet requirements for compact and thin equipment, Toshiba offers various packages with power dissipation of 1.0 to 150 W and drain current of 1 to 50 A. In addition, we offer devices housed in the SOP-8 and TSSOP-8 packages. These devices consist of input/output isolated TFP Series MOSFETs and trench MOSFETs with ultra-low ON-resistance. 100 NEW SOP Advance TO-3P (SM) NEW PS-8 10 TO-220 (SM) SOP-8 NEW VS-8 VS-6 1.0 0.1 0.1 TSSOP-8 Drain Current ID (A) TFP PW-MOLD DP SP PW-MINI 1.0 10 100 1000 Power Dissipation PD (W) VS-6 Unit: mm 0.3 0.05 B' A' 2.0 0.08 A' 4.0 0.1 B 1.4 0.1 1.55 0.1 B' 3.05 0.1 0.3 0.1 Reel dimensions 0.05 0.05 9.0 o60 0.7 0.05 2.9 0.2 0.05 11.4 5.0 o180 3 0.16 0.05 1 2.8+0.2 -0.3 1.6+0.2 -0.1 0.95 o1.1 0.1 B 3.3 0.1 A A 5.2 0.2 3.5 0.1 1.75 0.1 4 4.0 0.1 +0.1 o1.5 -0.0 2.75 6 8.0 0.2 Tape dimensions 0.25+0.25 -0.15 Packing quantity 3000pcs / reel VS-8 Unit: mm Tape dimensions 1 8.0 0.2 B 4.0 0.1 A A 0.8 0.05 B 0.95 0.1 B 3.1 0.1 11.4 Reel dimensions 5.0 9.0 0.475 Packing quantity 4000pcs / reel o180 o60 A 0.24+0.10 -0.09 +0.05 0.71+0.05 -0.15 0.71 -0.15 B 0.2 0.05 0.05 S S 40 A A o1.1 0.1 4 0.65 2.0 0.1 2.75 1.5 0.1 8 1.9 0.1 5 4.0 0.1 +0.1 o1.5 -0.0 1.9 0.1 0.025 M A 2.0 0.3+0.1/ -0.05 3.5 0.1 1.75 0.1 2.9 0.1 PS-8 Unit: mm 0.05 M 2.75 0.33 0.05 8.0 0.2 o1.1 0.1 0.2 0.05 3.1 0.1 4.0 0.1 5.5 0.2 +0.1 o1.50 -0.0 1.75 0.1 Tape dimensions A 2.0 0.05 2.8 0.1 3.1 0.1 0.17 0.02 M B 1.12+0.13 -0.12 0.05 0.65 2.9 0.1 0.28+0.10 -0.11 0.8 0.05 A 0.025 S S 11.4 Reel dimensions 5.0 9.0 o180 B 0.475 o60 4 1.15 0.05 1.12+0.13 -0.12 1 0.33 0.05 0.95 0.05 4.0 0.1 0.28+0.10 -0.11 5 2.4 0.1 8 Packing quantity 3000pcs / reel TSSOP-8 Unit: mm Tape dimensions 3.5 0.1 0.4 1.5 1.1 0.1 18.5 (max) Reel dimensions 120 3 0.6 0.2 13.5 0.5 o330 2 30 .5 0 2.0 o13 0.2 o100 1 .5 R135 R10 0 +0.04 3.5 0.2 6.6 0.1 4.0 0.05 0.16 -0.02 3.3 max 3.0 0.1 0.05 0.05 0.65 0.85 0.05 4 0.25 0.05 (0.525) 1 0.05 0.3 6.9 0.2 3.7 0.2 (4.75) 5.5 0.05 12.0 0.2 8.0 0.1 1.55 0.05 1.1 0.1 4.4 0.1 5 6.4 0.3 8 0.3 0.05 1.75 0.1 4.0 0.1 2.0 0.05 o1.55 0.05 Packing quantity 3000pcs / reel 41 Package List SOP-8 Unit: mm 0.4 0.1 0.595 5.6 5.3 0.1 9.3 0.1 6.5 0.1 6.8 8.0 0.1 0.25 M 0.3 0.05 o1.55 0.05 2.0 2.0 0.5 5.5 0.1 12.0 0.2 4 4.0 0.1 (4.75) 1 6.0 0.3 5 4.4 0.2 8 1.75 0.1 Tape dimensions 2.55 0.1 1.27 Reel dimensions 5.5 max 18.5 (max) 120 3 13.5 0.5 R135 .5 0 o330 2 30 +0.1 2.0 0.1 -0.05 o13 0.2 0.1 o100 1 0 .5 R10 4.0 1.5 0.2 +0.1 0.15 -0.05 5.0 0.2 0.5 0.2 Packing quantity 3000pcs / reel SOP Advance Unit: mm 18.5 (max) 13.5 0.5 120 3 R135 4.0 R10 S 0.05 S 2.0 o13 0.2 Packing quantity 3000pcs / reel 42 5.6 0.1 5.8 9.3 0.1 0.5 Reel dimensions o100 1 o330 2 A 5 0.8 0.1 .5 30 8 1.2 0.1 o1.7 0.1 8.0 0.1 0 0.6 0.1 4.25 0.2 .5 5.0 0.2 0.595 0.166 0.05 4 4 6.6 6.4 0.1 0.3 0.05 o1.55 0.05 2.0 2.0 0 1 1.75 0.1 A 0.15 0.05 1 0.95 0.05 M 12.0 0.2 5.5 0.1 (4.75) 0.05 5 1.1 0.2 0.4 0.1 4.0 0.1 3.5 0.2 1.27 8 5.0 0.2 6.0 0.3 0.5 0.1 Tape dimensions PW-Mini Unit: mm 1.5 0.1 Tape dimensions 2.0 0.3 0.05 +0.1 o1.5 -0 4.0 0.1 2.0 9.5 0.5 2.3 0.9 1.65 0.1 1.8 0.1 8.0 0.1 A 1.5 0.1 75 1 2 8 120 2 0.15 30 46 41.5 41.5 +0.2 0.9 -0.0 98 3 1. Gate 2. Drain (heat sink) 3. Source o75 0.5 Reel dimensions o178 1.0 + 0.08 0.4- 0.05 1.5 0.1 4.9 0.2 o 13 0.2 + 0.08 0.4 - 0.05 4.2 max 0.8 min 2.5 0.1 + 0.08 0.45 - 0.05 5.1 0.2 4.5 0.2 4.7 0.2 0.4 0.05 1.7 max 12.0 0.3 4.85 5.65 0.05 1.6 max 4.6 max 1.1 0.2 9.5 A' Packing quantity 1000pcs / reel DP Unit: mm o3.0 0.05 4.0 0.1 o1.5 +0.1 -0 2.0 0.1 0.3 0.05 10.1 0.2 0.9 2.5 0.6 0.15 1.75 0.1 0.6 max 5.5 0.2 5.2 0.2 1.5 0.2 6.8 max 16.0 0.3 6.75 7.5 0.1 2.0 max Tape dimensions 6.8 0.1 8.0 0.1 0.95 max 0.6 0.15 2.7 0.1 3 17.5 1.5 40 120 3 R5 2 0.5 R120 2 0.1 0.1 2 0.5 1. Gate 2. Drain (heat sink) 3. Source 3 0.5 0.5 o80 1 o330 2 2 Reel dimensions o13 0.5 1 2.5 max 2.3 2.3 1.1 0.2 0.6 max 10 1 2 0.5 2 0.5 Packing quantity 2000pcs / reel 43 Package List New PW-Mold Unit: mm 1.5 0.2 2.5 0.2 120 3 R120 2 2.3 0.2 0.1 0.1 3 2 0.5 2 0.5 3 0.5 0.6 0.15 o80 2 o330 2 1.2 max 10.1 0.2 17.5 1.5 40 R5 0.8 max 2.7 0.1 Reel dimensions 2.3 0.15 2.3 0.15 2 0.3 0.05 6.8 0.1 8.0 0.1 1.1 0.2 0.6 max 1 o3.0 0.05 4.0 0.1 o1.5 +0.1 -0 2.0 0.1 16.0 0.3 6.75 7.5 0.1 0.6 max 5.5 0.2 5.2 0.2 o13 0.5 6.5 0.2 1.75 0.1 Tape dimensions 10 1 1.05 max 2 0.5 1. Gate 2. Drain (heat sink) 3. Source 2 0.5 Packing quantity 2000pcs / reel TO-220SM Unit: mm 3 0.2 2.54 0.25 13.9 0.1 5.2 0.1 Reel dimensions 0.6 1.5 0.76 0.4 0.05 o2.0 0.1 10.8 0.1 12.0 0.1 1.5 0.1 4.0 0.1 o1.5 +0.1 -0 2.0 0.1 21.5 10.6 max 9.1 1.32 24.0 0.3 10.75 11.5 0.1 10.3 max 1.75 0.1 Tape dimensions 2.54 0.25 120 3 25.4 2 o330 2 .5 0 o13 0.5 o100 1 0 .5 4.0 60 2.0 3 4.7 max 2 2.6 1 0.1 1.32 0.5 R135 R6.5 2 0.5 1. Gate 2. Drain (heat sink) 3. Source 44 Packing quantity 1000pcs / reel TFP Unit: mm 0.4 0.1 12.0 0.1 4.0 0.1 2.0 0.1 o1.5 0.1 1.75 0.1 9.2 max 7.0 0.2 0.8 max Tape dimensions 0.30 0.05 11.5 0.1 24.0 0.3 10.5 0.1 9.2 max 21.5 0.3 1 9.5 0.1 3.0 0.1 0.7 max o2.0 0.1 Reel dimensions 120 3 25.5 2 0.2 1.5 2.0 2.5 1.0 0.2 1.0 0.2 3.6 0.2 1. Drain (heat sink) 2. Gate 3. Source1 4. Source2 o13 0.5 o330 2 4.0 3.0 max 60 o80 1 R10 4 0.4 0.1 3 0 .5 R135 2 2 0.5 Packing quantity 1500pcs / reel 45 Package List 2. Through-Hole Package LSTM PW-Mold (Straight) Unit: mm 5.1 max 2.0 max 6.8 max 0.6 max 5.2 0.2 2.2 max 8.2 max 5.2 0.2 0.75 max 0.95 max 1.27 2.3 0.6 max 1 2 3 2.54 1. Source 2. Drain 3. Gate 3 1. Gate 2. Drain (Heat Sink) 3. Source DP (Straight) TPS 8.0 0.2 2.0 max 1 2.3 2 1. Gate 2. Drain (Heat Sink) 3. Source 1.1 0.2 2.3 0.6 max 3 12.6 min 2.5 max 15.7 max 3.0 6.7 max o3.6 0.2 1.6 max 2.6 0.5 1.32 2.54 0.25 1 2 3 4.7 max 0.76 1. Gate 2. Drain (Heat Sink) 3. Source 2.5 0.5 2.5 0.5 1. Source 2. Drain 3. Gate TO-220AB 10.3 max 0.5 + 0.15 - 0.05 2.5 max 0.6 0.15 0.5 0.5 13.5 min 1.4 0.1 1.05 0.1 12.0 min 0.95 max 1.5 7.0 0.2 0.6 max 5.5 0.2 5.2 0.2 1 2 3 1.3 3.5 0.2 6.8 max 46 2.3 2 1 0.6 max 2.5 max 0.6 0.15 4.1 max 1.27 12.0 min 0.6 max 1.1 0.2 0.8 max 10.5 min 1.0 1.0 max 0.5 + 0.15 - 0.05 TO-220SIS o 3.2 0.2 5.6 max 3.9 3.0 2.7 0.2 0.69 0.15 0.64 0.15 4.5 0.2 2.6 1 2 3 2.54 2.6 0.1 2.54 2.54 0.25 1 1. Gate 2. Drain 3. Source 3 TO-3P(N) 2.0 12.6 min + 0.3 1.0 - 0.25 5.45 0.2 + 0.3 0.6 - 0.1 1.8 max 2.6 2 4.7 max 1.32 1 3 1. Gate 2. Drain (Heat Sink) 3. Source 1. Gate 2. Drain (Heat Sink) 3. Source TO-3P(N)IS 20.0 0.3 5.45 0.2 4.8 max 2.54 0.25 0.5 2.54 0.25 2.0 0.3 2.8 0.76 20.5 0.5 3.3 max 10.6 max 9.1 2.5 max 1.6 max 4.5 o 3.2 0.2 15.9 max 9.0 1.32 1.0 10.3 max 2.0 TO-220FL 2 4.5 0.2 A 2.54 0.25 13 0.5 2.8 max 13.0 min 1.1 0.75 0.15 0.75 0.15 o 3.2 0.2 10 0.3 1.14 0.15 1.1 1. Gate 2. Drain 3. Source 2.7 0.2 15 0.3 3.9 3.0 10 0.3 Unit: mm 15 0.3 TO-220NIS 1 2 3 TO-3P(L) 20.5 max 3.5 o 3.3 0.2 5.45 0.15 1. Gate 2. Drain 3. Source 2 3 5.0 0.3 1 1.0 0.6 + 0.25 - 0.15 3.15 + 0.2 - 0.1 5.45 0.15 1 1. Gate 2. Drain (Heat Sink) 3. Source 2 5.2 max 5.45 0.2 2.8 5.45 0.2 3.0 + 0.3 1.0 - 0.25 + 0.25 0.6 - 0.10 1.0 + 0.25 - 0.15 19.4 max 2.5 2.0 26.0 0.5 20.0 0.6 2.0 2.50 21.0 0.5 15.5 3.6 max 11.0 6.0 o 3.6 0.2 5.5 15.8 0.5 3 47 OVERSEAS SUBSIDIARIES AND AFFILIATES (As of March 10, 2004) Toshiba America Electronic Components, Inc. Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd. Headquarters-Irvine, CA Dusseldorf Head Office Hong Kong Head Office 9775 Toledo Way, Irvine, CA 92618, U.S.A. Tel: (949)455-2000 Fax: (949)859-3963 Hansaallee 181, D-40549 Dusseldorf, Germany Tel: (0211)5296-0 Fax: (0211)5296-400 Level 11, Tower 2, Grand Century Place, No.193, Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969 Boulder, CO (Denver) Munchen Office 3100 Araphahoe #500, Boulder, CO 80303, U.S.A. Tel: (303)442-3801 Fax: (303)442-7216 Buro Munchen Hofmannstrasse 52, D-81379, Munchen, Germany Tel: (089)748595-0 Fax: (089)748595-42 Deerfield, IL (Chicago) France Branch One Pkwy., North, #500, Deerfield, IL 60015-2547, U.S.A. Tel: (847)945-1500 Fax: (847)945-1044 Les Jardins du Golf 6 rue de Rome 93561, Rosny-Sous-Bois, Cedex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 Duluth, GA (Atlanta) Italy Branch 3700 Crestwood Pkwy, #160, Duluth, GA 30096, U.S.A. Tel: (770)931-3363 Fax: (770)931-7602 Centro Direzionale Colleoni, Palazzo Perseo 3, I-20041 Agrate Brianza, (Milan), Italy Tel: (039)68701 Fax: (039)6870205 Beaverton/Portland, OR 8323 SW Cirrus Drive, Beaverton, OR 97008, U.S.A. Tel: (503)466-3721 Fax: (503)629-0827 Raleigh, NC 3120 Highwoods Blvd., #108, Raleigh, NC 27604, U.S.A. Tel: (919)859-2800 Fax: (919)859-2898 Richardson, TX (Dallas) Spain Branch Parque Empresarial, San Fernando, Edificio Europa, a 1 Planta, E-28831 Madrid, Spain Tel: (91)660-6798 Fax:(91)660-6799 U.K. Branch Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276)69-4600 Fax: (01276)69-4800 BCE0017B Beijing Office Room 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8796 Fax: (010)6590-8791 Chengdu Office Suite 403A, Holiday Inn Crown Plaza 31, Zongfu Street, Chengdu, 610016, Sichuan, China Tel: (028)675-1773 Fax: (028)675-1065 Qingdao Office Room B707, Full Hope Plaza, 12 Hong Kong Central Road, Qingdao, Shandong, 266071, China Tel: (0532)502-8105 Fax: (0532)502-8109 Toshiba Electronics Shenzhen Co., Ltd. Room 2601-2609, 2616, Office Tower Shun Hing Square, Di Wang Commercial Center, 5002 Shennan Road East, Shenzhen, 518008, China Tel: (0755)2583-0827 Fax: (0755)8246-1581 Toshiba Electronics Korea Corporation Seoul Head Office Gustavslundsvagen 18, 5th Floor, S-167 15 Bromma, Sweden Tel: (08)704-0900 Fax: (08)80-8459 891, Sejong Securities Bldg. 20F, Daechi-dong, Gangnam-gu, Seoul, 135-738, Korea Tel: (02)3484-4334 Fax: (02)3484-4302 1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408)526-2400 Fax:(408)526-8910 Toshiba Electronics Asia (Singapore) Pte. Ltd. Gumi Office Wakefield, MA (Boston) Singapore Head Office 401 Edgewater Place, #360, Wakefield, MA 01880-6229, U.S.A. Tel: (781)224-0074 Fax: (781)224-1095 438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore 119968 Tel: (6278)5252 Fax: (6271)5155 Toshiba do Brasil, S.A. Toshiba Electronics Service (Thailand) Co., Ltd. San Jose Engineering Center, CA Electronics Component Div. Rua Afonso Celso,55213 ardar, Vila Mariana CEP 04119-002, Sa o Paulo, Brasil Tel: (011)5576-6619 Fax: (011)5576-6607 Toshiba India Private Ltd. 6F DR. Gopal Das Bhawan 28, Barakhamba Road, New Delhi, 110001, India Tel: (011)2371-4601 Fax: (011)2371-4603 135 Moo 5, Bangkadi Industrial Park, Tivanon Road, Pathumthani, 12000, Thailand Tel: (02)501-1635 Fax: (02)501-1638 6F, Goodmorning Securities Building, 56 Songjung-dong, Gumi-shi, Kyeongbuk, 730-090, Korea Tel: (054)456-7613 Fax: (054)456-7617 Toshiba Electronics (Shanghai) Co., Ltd. 11F, HSBC Tower, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002 Hangzhou Office Toshiba Electronics Trading (Malaysia)Sdn. Bhd. 9F Zhejiang San Rui Bldg. No. 36 QingChun Road, Hangzhou 310004, China Tel: (0571)8704-0255 Fax: (0571)8704-0200 Kuala Lumpur Head Office Tsurong Xiamen Xiangyu Trading Co., Ltd. Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (03)5631-6311 Fax: (03)5631-6307 14G, International Bank BLDG., No.8 Lujiang Road, Xiamen, 361001, China Tel: (0592)226-1398 Fax: (0592)226-1399 Penang Office Suite 13-1, 13th Floor, Menara Penang Garden, 42-A, Jalan Sultan Ahmad Shah, 10050 Penang, Malaysia Tel: (04)226-8523 Fax: (04)226-8515 Toshiba Electronics Philippines, Inc. 26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511 Toshiba Electronics Taiwan Corporation Taipei Head Office 17F, Union Enterprise Plaza Building, 109 Min Sheng East Road, Section 3, Taipei, 105, Taiwan Tel: (02)2514-9988 Fax: (02)2514-7892 Kaohsiung Office 16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road, Kaohsiung, 800, Taiwan Tel: (07)237-0826 Fax: (07)236-0046 The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 021023_A The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk. 021023_B TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030519_Q 2004 Previous edition: BCE0017A 2004-03(0.5k)PC-O Printed in Japan Semiconductor Company Website: http://www.semicon.toshiba.co.jp/eng 100% recycled paper Power MOSFETs Sweden Branch 777 East Campbell Rd., #650, Richardson, TX 75081, U.S.A. Tel: (972)480-0470 Fax: (972)235-4114 2004-3