15. MISCEL rm IN ORDER OF: (1)CAYEGORY,(2)TYPE NO. NOUS TRANSISTORS 2 | 1|CATEGORY | MIDWG #]L C LINE TYPE U/STRUC- A\Y200 EO DESCRIPTION No. No. S| TURE Tl s/a AD E TO200 |DE Ser. 7 BRIOTC* T3 IN Si {[TO55 [A [Rad TOOT n/Sq Cm;Post Rad hFE 7.0 At VCE SGV Ic 3.0A 2 BR101D* 13 |N Si |TO6O A |Max, Rad. Levei-5OOT nvt;Post Rad hFE-15;|CBO-1.0mA 3 BRiO1E* 13. [N Si_|T061 A@ |Rad 100T n/Sq Cm;Post Rad hFE 7.0 At VCE 5.0V,lc 3.0A 4 |BRIO1F* 13 [N Si [TO61 A Rad 100T n/Sq Cm;Post Rad hFE 7.0 At VCE 5.0V.Jc 3.0A 5 BR200A* 13 5N Si |TO61 A |Rad 100T n/Sq Cm:Post Rad hFE 15 At VCE 5.0V Ic 5.0A 6 BR200B* i3|N Si_|TO61 A Rad 100T n/Sq Cm;Post Rad hFE 15 At VCE 5.0V,Ic 5.0A 7 BR201A* T3 [N Si 1TO61 A |Rad t00T n/Sq Cm;Post Rad hFE 10 At VCE 5.0V Ic 5.0A 8 BR201B* 13 |N Si }T061 A Rad 100T n/Sq Cm;:Post Rad hFE 10 At VCE 5.0V,Ic 5.0A | 9 |BR300A* 13 [N S$i_|TO61 A@ _|Rad_100T n/Sq Cm:Post Rad hFE 15 At VCE(s) 2.0V,Ic 10A 10 BR300B* 13 [N Si |TO61 A Rad 100T n/Sq Cm;Post Rad hFE 15 At VCE(s) 2.0V,ic 10A V1 BR301A* 13 |N Si |TO61 AG {Rad 100T n/Sq Cm;Post Rad hFE 10 At VCE(s) 3.0V,Ic 10A | 12 |BR301B* 13 |N Si_|TO61 A Rad 100T n/Sq Cm;Post Rad hFE 10 At VCE(s) 3.0V,lc_ 10A 13 BR400A* 13 |N Si [TO61 A@ {Rad 100T n/Sq Cm;Post Rad hFE 12 At VCE(s) 2.0V,Ic 5.0A 14 BR400B* 13 |N Si |TO64 A Rad 100T n/Sq Cm;Post Rad hFE 12 At VCEj(s) 2.0V,lc 5.0A 15 BR401A* | 13. [N Si |TO61 A@ |Rad 100T n/Sq Cm;Post Rad hFE 7.0 At VCE(s) 2.5V,lc 5.0A 16 BR4018* 43 IN Si [TO61 A Rad 100T n/Sq Cm;Post Rad hFE 7.0 At VCEj{s} 2.5V,Ic 5.0A 17 PPR 1006* 13 |N Si |T27 AG |Post Rad hFE-15 at te 3.0A;VCE 5.0V. 18 |PPR1007*__ 13 [IN Si |TOo6O |AG |Post Rad hFE-15 at Ic 3.0A:VCE 5.0V. 19 PPR1008* 13 |N Si |[T27 A@ |Past Rad hFE-7.0 at Ic 3.0A;VCE 5.0V. 20 PPR1009* 13 1N Si |TO6O A |Post Rad hFE-7.0 at lc 3.0A;VCE 5.0V. 4. {PPR1010* _ 13 [N Si_ |T061 A@ |Post Rad hFE-15 at t 10A;VCE 5.OV. 2 PPR1011* 13 [IN Si |TO61 A Past Rad hFE-15 at lc 10A;VCE 5.0V. PPR1012* 13 [N Si |TO61 A |Post Rad hFE-10 at ic 10A;VCE 5.0V. PPR1013*_ 13 [N Si_|T061 A Post Rad hFE-10 at Ic 10A;VGE 5.0V. MTS 102 141N Si |TO92 A Temperature Sensor:AVBE +3.0mV;Temp Acc 2.0C;TC -2.25mV/C MTS103 14(N Si |TO92 A Temperature Sensor;AVBE +4.0mV;Temp Acc 3.0C;TC -2.25mV/C MTS105 14 IN Si_|TO92 A Temperature Sensor;AVBE +7.OmV;Temp Acc +5.0C;TC -2.25mV/C PT72 14 [N-PL Si [TO46 A |Press. tOpsid nom;Tc 150mV/C;hFE 10 nom;BVCEO 120Vitr 10us. PT22 14 JN-PL Si |TO46 A |Prass. 2.0psid nom;Tc +150mV/C;hFE 10 nom;BVCEO 120V;tr 10us. PT52 14 |N-PL Si_|TO46 A@ |Prass. 5.Opsid nom;Tc +150mV/C:hFE 10 nom:BVCEO 120Vitr_10us. PT102 14 7N-PL Si [TO46 A@ |[Press. 1O0psid nom;Tc 150mMV/C:AFE 10 nom:BVCEO 120V;tr 10us. PT162 14 |N-PL Si |TO46 AY |Press. 15psid nom;Te 150mV/C;hFE 10 nom;BVCEO 120V;tr 10us. PT202 14 [N-PL Si |TO46 A@ |Press. 2Opsid nom;Tc +150mV/C;hFE 10 nom;BVCEO 120Vitr 10us. PT-H2 14 7N-PL Si /TO46 A [Prass. 5OOpsid nomiTe 15O0mV/CHFE 10 nom;BVCEO 120Vitr 10us. PT-L2 14 ])N-PL Si |TO46 AD |Press. .100psid nom;Te +15O0mV/C:hFE 10 nom;BVCEO 120Vitr 10us. PT-M2 14 [N-PL Si |TO46 A |Press. .250psid nom;Te +15OmV/ChFE 10 nom:BVCEO 120Vitr 10us. BFRC96 15(N Si BFR96 Chip DC2906A 15 1P Si T 2N2906A Chip 39. |DC2907A. sd AS IP Si T__|2N2907A Chip 40 0C3439 15 ]N Si T 2N3439 Chip 41 DC3440 15 |N Si T 2N3440 Chip } 42 |pc4352 1is|P Si DF |2N4352 Chip 43 DN918 45 (N Si T BYCEO i5Vmin;HFE 100 min at VCE TVAIC 3mAT S8OOMHz min 44 DN2219A 15 |N Si T BYCEO S5OVmin:HFE 40 min at VCE 10V,IC 500mA 45 |Di 22A 15 |N Si T BVCEO S5O0Vmin;HFE 75 min at VCE 10V,JC_ 1mA 46 B 84 15 [N Si T BVCEO 6OVmin;HFE 150-500 at VCE 5V,IC TOuA;fT TOOMHz min 47 ON3439 15 |N Si T BVCEO 400Vmin;:HFE 30 min at VCE 10V,IC 20mA;fT 5OMHz min 48 CN9000 15 iN Si T BVCEO 400Vmin:HFE 30 min at VCE 10V,IC_ 20mA 49 ON-1006-2 15/N Si icer 500n Max;lebo TO0uA Max;Hfe Min 20 at ic 7.0mA,VCE 10V 50 OP2605 15 )P Si T BVCEO 40Vmin;HFE 100-300 at VCE 5V,IC 10uA;fT 30MHz min 5