1
Item Symbol Ratings Unit
Drain-source voltage VDS 60
Continuous drain current ID±45
Pulsed drain current ID p ±180
Gate-source voltage VGS ±20
Maximum avalanche energy EAV *1 461.9
Maximum power dissipation PD60
Operating and storage Tch +150
Temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2895-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current VDS=60V VGS=0V
VGS=±20V
ID=22.5A
ID=22.5A VDS=25V
VCC=30V ID=45A
VGS=10V
RGS=10 Ω
V
V
μA
mA
nA
mΩ
S
pF
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.08
75.0
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 1mA VGS=0V
ID= 1mA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VGS=4V
VGS=10V
VDS=25V
VGS=0V
f=1MHz
L=100μH Tch=25°C
IF=45A VGS=0V Tch=25°C
IF=45A VGS=0V
-di/dt=100A/μs Tch=25°C
V
A
A
V
mJ
W
°C
°C
60
1.0 1.5 2.0
10 500
0.2 1.0
10 100
15 20
10 12
15.0 35.0
2900 4350
930 1400
260 390
13 30
35 50
190 290
75 140
45
0.95 1.43
55
0.10
-55 to +150
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
FAP-IIIB Series 200511
*1 L=0.304mH, Vcc=24V
http://www.fujielectric.co.jp/fdt/scd/
Min. Typ. Max. Units
http://store.iiic.cc/