Nov-07-2002
1
BB639C/BB659C...
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV / VTR tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639C
BB659C/-02V
1 2
Type Package Configuration LS (nH) Marking
BB639C
BB659C
BB659C-02V
SOD323
SCD80
SC79
single
single
single
1.8
0.6
0.6
yellow S
HH
H
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR30 V
Peak reverse voltage
( R
5k
)
VRM 35
Forward current IF20 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150
Nov-07-2002
2
BB639C/BB659C...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
36.5
27
2.5
2.4
39
30.2
2.72
2.55
42
33.2
3.05
2.75
pF
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT28 14.2 15.3 -
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
CT2/CT25 9.5 11.1 -
Capacitance matching1)
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB639C
VR = 1V to 28V , f = 1 MHz, 4 diodes sequence,
BB659C/-02V
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence ,
BB659C/-02V
CT/CT
-
-
-
-
0.3
0.5
2.5
1
2
%
Series resistance
VR = 5 V, f = 470 MHz
rS- 0.6 0.7
1For details please refer to Application Note 047
Nov-07-2002
3
BB639C/BB659C...
Diode capacitance CT =
(VR)
f = 1MHz
0 5 10 15 20 V30
VR
0
5
10
15
20
25
30
pF
40
CT
Temperature coefficient of the diode
capacitance TCc =
(VR)
10 0 10 1 10 2
V
VR
-5
10
-4
10
-3
10
1/°C
TCC
Reverse current IR =
(TA)
VR = 28V
-30 -10 10 30 50 70 °C 100
TA
0
10
1
10
2
10
3
10
pA
IR
Reverse current IR =
(VR)
TA = Parameter
10 0 10 1 10 2
V
VR
-1
10
0
10
1
10
2
10
3
10
pA
IR
25°C
85°C
