SOT-23 Plastic-Encapsulate Transistors a. MMBT3906LT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR UNIT: mm FEATURES Power dissipation Pcm: 0.2 W (Tamb=25C ) Bae eit if current icm: -0.2A -base voltage Viseyceo:-40V Gperating and storage junction temperature range Ts, Tstg :-55C to+150C ELECTRICAL CHARACTERISTICS (Tamp=25C_ unless otherwise specified) Collector-base breakdown voltage V(BR)CBO Ic=-100 A, lE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, ls=0 -40 Vv Emitter-base breakdown voltage V(BR)EBO Ic=-100LA, in=0 6 Vv Collector cut-off current IcBo Vce=-40V le=0 -0.4 LA Collector cut-off current IcEO Vce=-40V, iB=0 -0.1 LA Emitter cut-off current leBo VeB=-5V, Ic=OmA -0.4 HA DC current gain hFE(1) Vce=-1V,ic=-10mA 100 300 9 NEE(2) Vce=-1V,Ic=-50mA 60 Collector-emitter saturation voltage VcEsat ic=-50mA,1IB=-5mA -0.4 Vv Base-emitter saturation voltage VBEsat Ic=-50mA,lB=-5mA . -0.95 Vv Transition frequency fr Vce=-20V,Ic=-10MA,f=100MHz| 250 MHz DEVICE MARKING : MMBT3906LT1=2A _ 186Typical Characteristics MMBT3906LT1 ny Ty =4+125 +25 C oOo = Nn Oo 55 C oS w hre;DCCRRRENT GAIN (NORMALIZED) Rs a So 0.1 02 03 0.5 07 1.0 20 3.0 5.0 7.0 10 20 30 50 70 100 200 ic COLLECTOR CURRENT (mA) DC Current Gain 1.0 Vee (sat}@tic/Ip = 10 0.8 a VeE@VcE = 10V _ 3 > 0.6 < 3 0.4 > > Vce(sat)@Ic/la = 10 o iv 0 1.0 2.0 5.0 10 20 50 100 = 200 Ic; COLLECTOR CURRENT(mA) "On'Voltages 187