BC817K.../BC818K... NPN Silicon AF Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration BC817K-16 6As 1=B 2=E 3=C - - - SOT23 BC817K-16W 6As 1=B 2=E 3=C - - - SOT323 BC817K-25 6Bs 1=B 2=E 3=C - - - SOT23 BC817K-25W 6Bs 1=B 2=E 3=C - - - SOT323 BC817K-40 6Cs 1=B 2=E 3=C - - - SOT23 BC817K-40W 6Cs 1=B 2=E 3=C - - - SOT323 BC818K-16W 6Es 1=B 2=E 3=C - - - SOT323 BC818K-40 6Gs 1=B 2=E 3=C - - - SOT23 1 Package 2011-09-19 BC817K.../BC818K... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC817... 45 BC818... 25 Collector-base voltage Unit VCBO BC817... 50 BC818... 30 5 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 500 1000 mW TS 115 C, BC817K, BC818K 500 TS 130 C, BC817KW, BC818KW 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS mA 150 C -65 ... 150 Value BC817K, BC818K 70 BC817KW, BC818KW 80 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-09-19 BC817K.../BC818K... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC817... 45 - - IC = 10 mA, IB = 0 , BC818... 25 - - Collector-base breakdown voltage IC = 10 A, IE = 0 , BC817... 50 - - IC = 10 A, IE = 0 , BC818... 30 - - 5 - - V(BR)EBO V - V(BR)CBO Emitter-base breakdown voltage Unit V IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 C - - 50 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 100 mA, VCE = 1 V, hFE -grp.16 100 160 250 IC = 100 mA, VCE = 1 V, hFE -grp.25 160 250 400 IC = 100 mA, VCE = 1 V, hFE -grp.40 250 350 630 IC = 500 mA, VCE = 1 V, all hFE-grps. 40 - - VCEsat - - 0.7 VBEsat - - 1.2 Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base emitter saturation voltage1) IC = 500 mA, IB = 50 mA 1Pulse test: t < 300s; D < 2% 3 2011-09-19 BC817K.../BC818K... Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 170 - MHz Ccb - 3 - pF Ceb - 40 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 4 2011-09-19 BC817K.../BC818K... DC current gain hFE = (IC) VCE = 1 V DC current gain hFE = (IC) VCE = 1 V hFE-grp.16 hFE-grp.25 hFE 10 3 hFE 10 3 10 2 10 2 105 C 85 C 65 C 25 C -40 C 105 C 85 C 65 C 25 C -40 C 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 1 -5 10 0 A 10 10 -4 10 -3 10 -2 10 IC -1 0 A 10 IC DC current gain hFE = (IC) VCE = 1 V Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 hFE-grp.40 10 3 10 3 C BC 817/818 EHP00223 mA 150 C 25 C -50 C 10 2 hFE 5 10 2 10 1 105 C 85 C 65 C 25 C -40 C 5 10 0 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 -1 0 A 10 IC 0 0.2 0.4 0.6 V 0.8 VCEsat 5 2011-09-19 BC817K.../BC818K... Collector cutoff current ICBO = (TA) VCBO = 25 V Base-emitter saturation voltage IC = (VBEsat), hFE = 10 BC 817/818 10 3 C EHP00222 10 5 mA CBO 150 C 25 C -50 C 10 2 BC 817/818 EHP00221 nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10 1 5 10 -1 0 1.0 2.0 3.0 V 10 0 4.0 0 50 100 V BEsat Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz 150 C TA Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) BC817K, BC818K 10 3 EHP00218 55 pF MHz 5 45 CCB/CEB fT BC 817/818 40 CEB 35 30 10 2 25 20 5 15 10 CCB 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 C 2 4 6 8 10 12 14 16 V 20 VCB/VEB 6 2011-09-19 BC817K.../BC818K... Total power dissipation P tot = (TS) Total power dissipation P tot = (TS) BC817K, BC818K BC817KW, BC818KW 550 550 mW 450 400 400 Ptot 450 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 15 30 45 60 75 90 105 120 0 0 150 15 30 45 60 90 105 120 C 75 150 TS Permissible Pulse Load RthJS = (tp) BC817K, BC818K Permissible Pulse Load Ptotmax/PtotDC = (tp ) BC817K, BC818K 10 3 Ptotmax/PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 s 10 10 0 -6 10 0 TP 10 -5 10 -4 10 -3 10 -2 s 10 0 TP 7 2011-09-19 BC817K.../BC818K... Permissible Puls Load RthJS = (t p) Permissible Pulse Load BC817KW, BC818KW Ptotmax/PtotDC = (tp ) BC817KW, BC818KW 10 3 10 3 Ptotmax/PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 8 2011-09-19 Package SOT23 BC817K.../BC818K... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 9 2011-09-19 Package SOT323 BC817K.../BC818K... Package Outline 0.9 0.1 2 0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 0.1 0.1 MIN. 2.1 0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 10 2011-09-19 BC817K.../BC818K... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2011-09-19