2011-09-19
1
BC817K.../BC818K...
NPN Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
BC817K-16
BC817K-16W
BC817K-25
BC817K-25W
BC817K-40
BC817K-40W
BC818K-16W
BC818K-40
6As
6As
6Bs
6Bs
6Cs
6Cs
6Es
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT323
SOT23
2011-09-19
2
BC817K.../BC818K...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BC817...
BC818...
VCEO
45
25
V
Collector-base voltage
BC817...
BC818...
VCBO
50
30
Emitter-base voltage VEBO 5
Collector current IC500 mA
Peak collector current ICM 1000
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS 115 °C, BC817K, BC818K
TS 130 °C, BC817KW, BC818KW
Ptot
500
250
mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BC817K, BC818K
BC817KW, BC818KW
RthJS
70
80
K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-09-19
3
BC817K.../BC818K...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC817...
IC = 10 mA, IB = 0 , BC818...
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC817...
IC = 10 µA, IE = 0 , BC818...
V(BR)CBO
50
30
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - - V
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp.16
IC = 100 mA, VCE = 1 V, hFE-grp.25
IC = 100 mA, VCE = 1 V, hFE-grp.40
IC = 500 mA, VCE = 1 V, all hFE-grps.
hFE
100
160
250
40
160
250
350
-
250
400
630
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7 V
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VBEsat - - 1.2
1Pulse test: t < 300µs; D < 2%
2011-09-19
4
BC817K.../BC818K...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 40 -
2011-09-19
5
BC817K.../BC818K...
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.16
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.40
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.25
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00223BC 817/818
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
˚C
-50
25
˚C
150
˚C
2011-09-19
6
BC817K.../BC818K...
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00222BC 817/818
BEsat
V
2.0 V 4.0
-1
100
101
3
10
5
5
Ι
CmA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00221BC 817/818
A
T
150
0
5
10
Ι
CBO nA
50 100
1
10
2
10
4
10
˚C
typ
max
103
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00218BC 817/818
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
BC817K, BC818K
0 2 4 6 8 10 12 14 16 V20
VCB/VEB
0
5
10
15
20
25
30
35
40
45
pF
55
CCB/CEB
CCB
CEB
2011-09-19
7
BC817K.../BC818K...
Total power dissipation Ptot = ƒ(TS)
BC817K, BC818K
0 15 30 45 60 75 90 105 120 150
0
50
100
150
200
250
300
350
400
450
550
Total power dissipation Ptot = ƒ(TS)
BC817KW, BC818KW
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
350
400
450
mW
550
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
BC817K, BC818K
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TP
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC817K, BC818K
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TP
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-09-19
8
BC817K.../BC818K...
Permissible Puls Load RthJS = ƒ (tp)
BC817KW, BC818KW
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC817KW, BC818KW
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-09-19
9
BC817K.../BC818K...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-09-19
10
BC817K.../BC818K...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
±0.1
0.9
12
3
A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
2011-09-19
11
BC817K.../BC818K...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.