SAMSUNG SEMICONDUCTOR INC ue o Pf zae4142 ooo7240 4 PNP EPITAXIAL SILICON _ TIP126 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement to TIP121 ABSOLUTE MAXIMUM RATINGS (T,=25C) 1. Base 2. Collector 3. Emitter we - | 1733 1-3 -3 | TO-220 - Characteristic Symbol Rating Unit Collector-Base Voltage Vege -80 Vv Collector-Emitter Voltage Voeo +80 Vv Emitter-Base Voltage Veso -5 Vv Base Current la -120 ' mA Collector Current (DC) le 5 A Collector Gurrnt (Pulse} Ie ~8 A Collector Dissipation (T2=25C) Pe 2 Ww Collector Dissipation (Te=25C) | Pe 65 Ww Junction Temperatura Tj 160 | S Storage Temperature Tstg -65.150 C * Refer to TIP125 for graphs ELECTRICAL CHARACTERISTICS (To=25C) Characteristic Symbol . Test Condition Min Max Unit *Gollector-Emitter Sustaining Voltage | BVcco (sus) | k=100mA, Ig=0 -80 Vv Collector Cutoff Current leao Vca=--80V, Ie=0 -0.2 mA Collector Cutoff Current bseo Vce=-40V, lp=0 0.5 mA Emitter Cutoff Current leao Vea= 5V, k=O , +2 mA. DC Current Gain . : bee Vee -3V, Io -0.5A 1000 . . Veem3V, le 3A 1000 Collector Emitter Saturation Voltage | Vce (sat) k=-3A, Ip=-12mA -2 Vv . . . Ibe 6A, p= 20mA 4 v "Base-Emitter On Voltage Veron) Vee= 3V, ip = -3A 2.5 Vv Collector Output Capacitance Cob Vea=10V, le=0, f=0.1MHz 300 pF . . * Pulse test : PW < 300ys, duty cycle < 2% Cc Bo~ Abs Ad R | Rs8KO " R2451200 E a 315. cee SAMSUNG SEMICONDUCTORINC LYE D Bp raeuau2 goo7741 O PNP EPITAXIAL SILICON TIP127 DARLINGTON TRANSISTOR r-33-3) ~~ yo-220 SAMSUNG -SEMICONOUCTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement to TIP122 ABSOLUTE: MAXIMUM RATINGS (T, =25C) Characteristic Symbol! Rating Unit Collector-Base Voltage Veso -100 Vv Collector-Emitter Voltage Vceo -100 Vv Emitter-Base Voltage Veso ~5 Vv Base Current le -120 mA : Collector Current (DC) Ie 1h | - A Collector Current (Pulse) le 8 A Cotector Dissipation (T=25C} | Pc ~ 2 Ww 1. Base 2. Collector 3. Emitter Collector Dissipation (T-=25C) | Pc 65 Ww Junction Temperature .| TI 150 C Storage Temperature Tstg ~-65~150 C * Refer to TIP125 for graphs ELECTRICAL CHARACTERISTICS (T~=25C) . Characterlstic Symbol Test Condition Min Max Unit *Collector-Emitter Sustaining Voltage | BVceo (sus) | b= -100mA, lg=0 -100 Vv Collector Cutoff Curent Icaa Vcs=100V, lp=0 -0.2 mA Collector Cutoff Current Ico Vce=5OV, Ip=0 . . -0.5 mA Emitter Cutoff Current lepo Ven=5V, k=O : -2 mA "OC Current Gain re Vce@3V, lb=0.5A 1000 - 0 Voe=3V, b=3A . 4000 "Collector Emitter Saturation Voltage | Vce (sat) lo=~GA, Ip=12MA . : ~2 Vv . _ lb=5A, la=20mMA . 4 -v *Base-Emitter On Voltage Vee(on) Vee= 3V, lb =~3A , -2.5 Vv Collector Output Capacitance Cob Vca=10V, fe=0, f=0.1 MHz 300 pF -* Pulse test : PW < 300ps, duty cycle = 2% . Cc Bo Wy 4 Rie8KO Ro OR | R21200 E G58 samsunc SEMICONDUCTOR 316HE D Bf eaesiye 0007744 & i PN EPITAXIAL _ TIP140F/141F/142F SILICON DARLINGTON TRANSIST OR SAMSUNG SEMICONDUCTOR INC | ; HIGH DC CURRENT GAIN, . | -ro-aRR) . T-33-29 MIN hee=1000 @ Vce=4V, Ic=5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP145FM46F/147F ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit a Collector-Base Voltage Vege : TIP1 40F 60 Vv > TIP144F 80 Vv : TIP142F 400 Vv Collector Emitter Voitage Vceo , ~~ 1. Base 2. Collactor 3. Emitter : TIP140F 60 v : TIP141F 80 Vv : TIP142F 100 V ec Emitter-Base Voltage Veso 5 Vv . Collector Current (DC) Ie . 10 A Bo- k Collector Current (Pulse) le 15 A Base Current (DC) ls 0.5 A . kc Collector Dissipation Pe 60 Ww , . Junction Temperature Fj 150 C Storage Temperature Tstg -65~150 C R; Ro R,=8Ko oF ELECTRICAL CHARACTERISTICS (T,=25C) Re=1200 Characteristic Symbol Test Condition Min Typ. Max Unit Colfector, Emitter Sustaining Voltage | Vceo(sus) . - : TIP140F | lb =30mA, lp=O 60 . Vv 2 TIPT41F . 80 Vv 2 TIPt42F 100 . v Collector Cutoff Current : TIP 140F leo Vce=30V, lg=0 2 mA : TIP141F Vce=40V, lg=0 2 mA : : TIP142F Vee=50V, ls=0 2 mA Collector Cutoff Current : TIPT40F | Iceo Vca=60V, Ie=O 1 mA > TIP141F Vca=80V, fe=0 1 mA : TIP142F Vea=100V, k=O 1 mA Emitter Cutoff Current leBo Ver=5V, lc=0 : 2 mA DC Current Gain bre Vee 2 4V, lo 5A 1000 Voe=4V, Ic=10A 500 Collector Emitter Saturation Voltage | Vce(sat) Ic=5A, Ip=10MA an . 2 Vv . : le=10A, lb=40mA 3 Vv Base Emitter Saturation Voltage Vee(sat) g=10A, b=40mMA 3.5 v Base Emitter On Voltage Vae(on) Vce=4V, lo=10A 3 Vv Delay Time ty Vec=30V, lo=5A 0.15 pS Rise Time t la=20mA, lb1=!s2 0.55 ps Storage Time ts 2.5 . | ps Fall Time tr 2.5 . us 319 gu css SAMSUNG SEMICONDUCTOR aLYE D Bracunue goo7745 4 i -NPN EPITAXIAL TIP 140F/141F/142F SAMSUNG SEMICONDUCTOR INC * t STATIC CHARACTERISTIC Ufa). COLLECTOR CURRENT 1 2 a 4 Vce(V}, COLLECTOR-EMITTER VOLTAGE ' 5 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE Veateat), Vcg{sat) (V), SATURATION VOLTAGE 05 1 2 5 10 20 &(A}, COLLECTOR CURRENT SAFE OPERATING AREA lo(mA), COLLECTOR CURRENT os a2 oO. 50 Veet), COLLECTOR-EMITTER VOLTAGE 1 2 5 10 20 50 100 100 200 500 1000. x + beau, DC CURRENT GAIN _ SILICON DARLINGTON TRANSISTOR (1-33-29 DC CURRENT GAIN gi ul : g 3 8 8 38 N 1a 19 0.4 0.2 05 1 2. & 10 20 tc(A), COLLECTOR CURRENT 50 100 COLLECTOR OUTPUT CAPACITANCE ConlpF), CAPACITANCE . 2 5 10 20 50 100 206 600 1000 Vest), COLLECTOR-BASE VOLTAGE POWER. DERATING Pol), POWER DISSIPATION 150 Te{*C}, CASE TEMPERATURE 9 25 0 75 100 126 175 e8 samsunc SEMICONDUCTOR 320LYE D Bf ecuutae ooo774b T i TIP 140T/141T/142T NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR SAMSUNG SEMICONDUCTOR INC . HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=AV, Ic=5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE Complementary to TIP145T/1467/147T ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symbol Rating Unit Collector-Base Voltage : TIP140T| Vcso 60 Vv . : : TIP141T . 80 v : TIP1427| 100 v Collector-Emitter Voltage Vero : TIP140T| 60 Vv -TIP1447] 86 T Vv : TIP142T 100 Vv Emitter-Base Voltage ~ Veso 5 V Collector Current (DC) Ie 10 A Collector Current (Pulse) Io 15 A Base Current (DC) le 0.5 A Collector Dissipation Pe 80 Wt Junction Temperature Tj 150 C Storage Temperature Tstg -65~150. C ELECTRICAL CHARACTERISTICS (Ta=25C) _ T-33-29 TO-220 Ris8Kn >= 1200 1. Base 2. Collector 3. Emitter Cc 4 cb SAMSUNG SEMICONDUCTOR a Characteristic Symbol Test Condition Min Typ Max Unit Collector Emitter Sustaining Voltage Veeo (sus) > TIP140T le=30mA, Ip=O 60 Vv : TIP141T 80 v : : TIP142T 100 Vv Collector Cutoff Current : TIP140T | Icco Vce=30V, Ia=O0 2 mA : TIP141T Vce=40V, ta=O0 2 mA : TIP142T Vor =50V, la=O 2 mA Collector Cutoff Current : TIP140T | {ceo Vca=60V, !e=O0 1 mA . : TIP141T Ves=80V, Ie=0 1 mA : TIP142T Vea= 100V, le=0 1 mA Emitter Cutoff Current leso Vee=5V, Ic=O _ 2 mA DC Current Gain Dee Vce=4V, Ic=5A 1000 : Vce=4V, lc=10A . 500 Collector Emitter Saturation Voltage | Vce(sat) Ic=5A,. [p= 10MA 2 v . Ic=10A, la=40mA 3 Vv Base Emitter Saturation Voltage Vae(sat) Ic=10A, Ip=40mA 3.5 Vv Base Emitter On Voltage Vee(on) | Vce=4V, le 10A 3 v Delay Time td Vec=30V, Ic=5A_ 0.15 ps Rise Time t Ip=20mA, lel =le2 0.55 pS Storage Time ts 2.5 us Fall Time tr 2.5 pS 321SAMSUNG SEMICONDUCTOR INC LYE O MH 2964442 0007747 1 ee NPN EPITAXIAL SILICON TIP140T/141T/142T . DARLINGTON TRANSISTOR T-33-29 & . 4 STATIC CHARACTERISTIC . OC CURRENT GAIN 100000 50000 20000 bE teooo a z a 5000 5 < 2000 5 # 000 a > 3 5 600 38 & a 5 200 < z a 3 100 bo 20 10 1 2. 3 4 5 01 02 05 1 2 5 10 20 0 100 Vce(V), COLLECTOR-EMITTER VOLTAGE 1 Saw KA}, COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE BASE-EMITTER SATURATION VOLTAGE Peyres 8 ee EQ 3 2 > g 3 - < z E FE os g 3 3 = 02 a j 3 O.1 3 = 0.08 # 0.02 . 001 C1 02 0.5 t 2 10 20 $0 100 . 2 10 20 60 100 200 S00 1000 kA}, COLLECTOR CURRENT . Vcx), COLLECTOR-BASE VOLTAGE ; POWER DERATING SAFE OPERATING AREA 20 z 3 5 z Zio x 25 3 ec d gs g ? a = z 2 3 @ is q 1 5 1 3 0.5 08 0.2 0.1 9 25 60 76 100 128 150 175 200 1 2 6 10 20 80 100 200 1000. Te(*C), CASE. TEMPERATURE Ves(V}, COLLECTOR-EMITTER VOLTAGE ck SAMSUNG SEMICONDUCTOR 922