1N4148WS/1N4448WS/1N914BWS
Taiwan Semiconductor
1 Version: L1804
200mW High Speed SMD Switching Diode
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOD-323F
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 4.85 ± 0.5 mg
KEY PARAMETERS
PARAMETER VALUE UNIT
VRRM 100 V
VF at IF=100mA 1.0 V
TJ MAX. 150 °C
Package SOD-323F
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER SYMBOL
1N4148
WS
1N4448
WS
1N914B
WS
UNIT
Marking code on the device S1 S2 S3
Power dissipation PD 200 mW
Repetitive peak reverse voltage VRRM 100 V
Forward current IF 150 mA
Non-repetitive peak forward current IFRM 300 mA
Junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +150 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 625 °C/W
1N4148WS/1N4448WS/1N914BWS
Taiwan Semiconductor
2 Version: L1804
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Forward voltage (1)
1N4448WS,1N914BWS
IF = 5 mA, TJ = 25°C
VF
0.62 0.72
V
1N4148WS
IF =10 mA, TJ = 25°C - 1.00
1N4448WS,1N914BWS
IF =100 mA, TJ = 25°C - 1.00
Reverse voltage IR= 5µA, TJ = 25°C VR
75 -
V
IR= 100µA, TJ = 25°C - 100
Reverse current @ rated VR (2) VR= 20V TJ = 25°C IR
- 25 nA
VR= 75V TJ = 25°C - 5 µA
Junction capacitance 1 MHz, VR=0V CJ - 4 pF
Reverse recovery time IF=10mA, IR=60mA, RL=100Ω,
IRR=1mA trr - 4 ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
PART NO. PACKAGE PACKING
1N4148WS RRG SOD-323F 3K / 7" Reel
1N4148WS RR SOD-323F 3K / 7" Reel
1N4148WS R9G SOD-323F 10K / 13" Reel
1N4148WS R9 SOD-323F 10K / 13" Reel
1N4448WS RRG SOD-323F 3K / 7" Reel
1N4448WS RR SOD-323F 3K / 7" Reel
1N4448WS R9G SOD-323F 10K / 13" Reel
1N4448WS R9 SOD-323F 10K / 13" Reel
1N914BWS RRG SOD-323F 3K / 7" Reel
1N914BWS RR SOD-323F 3K / 7" Reel
1N914BWS R9G SOD-323F 10K / 13" Reel
1N914BWS R9 SOD-323F 10K / 13" Reel
1N4148WS/1N4448WS/1N914BWS
Taiwan Semiconductor
3 Version: L1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Forward Voltage VS. Forward Current
Fig. 2 Reverse Current vs Reverse Voltage
Fig. 3 Admissible Power Dissipation Curve
Fig.4 Typical Junction Capacitance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01 0.1 1 10 100 1000
25°C
125°C
0.01
0.1
1
10
100
0 20 40 60 80 100 120
Ta=25°C
0
50
100
150
200
250
0 25 50 75 100 125 150 175
VR=0V
Tj=25°C
f=1MHz
0.6
0.7
0.8
0.9
1
1.1
1.2
0 1 2 3 4 5 6 7 8 9 10
Reverse Current (uA)
Forward Current (mA)
Ambient Temperature (°C)
Reverse Volatge (V)
Forward Voltage (V)
Power Dissipation (mW)
Reverse Voltage (V)
Junction Capacitance (pF)
1N4148WS/1N4448WS/1N914BWS
Taiwan Semiconductor
4 Version: L1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-323F
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 1.15 1.35 0.045 0.053
B 2.30 2.80 0.091 0.110
C 0.25 0.40 0.010 0.016
D 1.60 1.80 0.063 0.071
E 0.80 1.10 0.031 0.043
F 0.05 0.25 0.002 0.010
DIM. Unit (mm) Unit (inch)
Typ. Typ.
A 0.63 0.025
B 0.83 0.033
C 1.60 0.063
D 2.86 0.113
1N4148WS/1N4448WS/1N914BWS
Taiwan Semiconductor
5 Version: L1804
Notice
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