SILICON TEMPERATURE SENSORS
designed for temperature sensing applications in automotive,
consumer, and industrial products requiring low cost and high
accuracy.
Precise Temperature Accuracy Over Extreme Temperature
MTS1 02: f2°C from -40°C to +150°C
Precise Temperature Coefficient
Fast Thermal Time Constant
3Seconds Liquid
8Seconds Air
Linear VBE versus Temperature Curve Relationship
Other Packages Available
Emitter-Base Voltage vEB4.0 +, i:cg,~pc
Collector Current Contlnuous- Ic 100 <qp !~:amAd~
Operating and Storage Junction ‘J Tstg -55 to +~:.bo ““ Oc
Temperature Range ,i,:::”
6Emitter I
q\VBE (nom) =620 mV
%
s400 -VBE(nom)= 600 mV -
&VBE(nom) =580 mV
>
200 II11IIIIIII
-40 040 80 120 160
TA, AMBIENTTEMPERATURE(°CI
MTSI02
MTS103
MTS105
~-
—R SECT. AA
~c
]MILLIMETERS INCHES
DIM \MIN IMAX MIN MAX
A4,32 5.33 0.170 0.210
B4,44 5.21 0.175 0.205
c318 419 ;0.125 0.165
D0.41 056 0.016 0.022.
F041 048 0.016 0.019
G~l14 140 0.045 0.055
H\- 2.54 -0100.
J!241 267,0095 0105
K] 1270\ -I0.500 -
L635! -\0.250 -
N; 203 :292’ 0080 0115
P292 :-]0115 -
R1343 I-I0.135 -i
4
s036 041 iOO14 0016 ;
All JEDEC d,mens,ons and noles applv
CASE 29-02
TO.92
@MOTOROLA INC j%. DS2536 R1
v
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwtse noted}
Characteristic Symbol Min Typ Max Unit
Emitter-Base Breakdown Voltage V(BR)EBO 4.0 Vdc
(iE =100 ~Adc, IC =O)
Base-Emitter Voltage
(Ic =0.1 mA) VBE 5B0 595 620 mV
Base-Emitter Voltage Matching, Note 1~vBE mV .!,.
X*V,
(1c =0.1 mA, TA= 25°C 20.05°CI MTS102 $...:\t)rp,,,
?3.0 \:.*\
MTS103 ,,\\l,
?4.0 .ty \‘~’.],,
MTSI05 “~‘i$:,;3,
?7.0 f~.~i,::’,,,.,,,
Temperature Matching Accuracy, Note 2., .?.),:“.
LT
(TI =40°C, T2 =+150°C, TA= 25°C =0.05°C) MTS102 ?2.0 ,,,1$$
MTS103
MTS105 ~,—
Temperature Coefflclent, Notes 3 and 4 TC -2.28 -2.265
(VBE =595 mV, Ic =0,1 mA)
Thermal Time Constant
Liquid ‘TH
Flowing Air
Dependence of TC on VBE @25’C JTC LVBE ,fi~,~33 mV/cC
(Note 4, Figure 3) ,;.:,;+~ti::~,,?f.$
,: +:9, mV
,,,*:*,?
THERMAL CHARACTERISTICS $.~ ~~.$!t
.,+ ‘t?{,.-,,$i
,*! ~ ~,\.\.
Characteristic Symbol J.:.i.’
‘~t.~$tMax
,.,~\,. Unit
Thermal Resistance, Junct!on to Amblen~ ReJA i‘~$?*c,:\ 200 Oc. w
<J’
*$\, “’$<\j
NOTES ?,.<,, ,:($.
4’:.{>,,
i?~.,~e.,,,t<h.
1All dev!ces w!th!n anyone group or package WIII be matched for VBEto Ihe loler~~f<~rifif!ed in the elec!r!cal character! stlcstable Each dev!ce WIII be
labeled w!lh the mean V6E value for !hal group . ,,
‘:$1!
2All dev)ces wlfhrn an lnd)vldual group as described tn Note 1. WIII track w!thln<~e Sbecofled temperature accuracv Includes varlattons )n TC VBE, and
nonllnear!!y In the range -40 to -150CC Nonltnearitv IS lyp!cally le:?~~hao =1 -C In th!s range (See Ftgure 4)
3The TC as defined by aleast-square I!near regression for VBE versu$~~$ralure over the range -40 to.150°C for anominal VBE of 595 mV at 25’C
For olher nomtnal V~E values the value of the TC must be adj~~e’aior l%e dependence of the TC on VBE {see Note 4)
$,Kh.>:*,\\,*.!-
4For nominal VBE at 25 °Cotherthan 595 mV, the TC must be cof$ecx@DStng the equallon TC= -2 265+0 003(VBE 595) where VBE IS in mVandthe TC
IS In mV CC The accuracv oi lhls TC IS typically ~0 01 rn$M$~J~,@*~+
5For max,mum temperature accuracy IC should nol excee~.~,~$.$ $$ee Ffgure 2]
,*.<,.’:s$i.k. >’
:T~y.!* >:;+!.
~i’$
~-~ ~<:y,he,
‘,:’:$:), .,$,
~,>1.
[!I, lil; ., I
I,,
001 002 005 0? 02 05 10 20 50 10
Ic COLLECTOR
CURRENT lmA,
FIGURE 3 TEMPERATURE COEFFICIENT versus
BASE-EMITTER VOLTAGE
620 1
TC=-2.265 +00033 [V8E-5951
&
s/
s
>
a
E600
5
;
u
m
s
>
580
-232 -228 -224 -2 2n -716
..
Tc TEMPERATURE COEFFICIENT [mV/’Cl
@MOTOROLA Semiconductor Products Inc.
.
-—
eFIGURE 4 LINEARITY ERROR versus TEMPERATURE
.2 0
=+10 -\
g/
a\
0{
a
ao\
:
E/
a\
z-lo 1
-20
-40 -20 0 20 40 60 80 100 120 140 160
TEMPERATURE(“CI
b. If VBE(nom) islessthan orgreaterthan 595 mV
determine TC from the relationship described
in Note 4.
(1) TC -2.265 +0.0033 (VBE -595) or see
Figure 3,
APPLICATIONS INFORMATION
The base and collector leads of the device should be
connected together In the operating ci;cuit (pins2 and 3)
They are not internally connected
,,,,&&#*Q– Customer receives ashipment of MTS102
‘f~$~.~’rces. The shipment consists of three groups of
‘t#ifferent nominal VBE values. .
Group 1: VBE (nom)= 595 mV
Group 2: VBE (nom)= 580 mV
Group 3: VBE (nom)= 620 mV
Find VBE versus Temperature Reiationshlp
1. Determine value of TC:
a. If VBE(nom)= 595 mV, TC=-2.265 mV/°Cfrom
the Electrical Characteristics table.
@MOTOROLA
?nq 1,1I1IJ
‘u” -40
4.
5
040 80 120
TA,AMBIENTTEMPERATUREI°CI
Given any measured VBE, the value of TA (to the
accuracy value specified: MTS102 -z2° C,
MTS103-t3°C, MTS105-t5°C)canbe read from
the above curve, or calculated from equation 2
Higher temperature accuracies can be achieved
if the collector current, IC, is controlled to react In
accordance with and to compensate for the
Iinearltyerror. Using this concept practical clrcults
have been built tnwhich these sensor shave
yielded accuracies within fO.l °C and tO 01 ‘C
Reference ‘“Transistors -- AHot Tip for Accurate
Temperature sensing”, pat o’Neiland Carl
Derrington, Electronics 1979.
Semiconductor Products Inc.
#
TYPICAL CIRCUITS
FIGURE 5 ABSOLUTE TEMPERATURE MEASUREMENT FIGURE 6 DIFFERENTIAL TEMPERATURE MEASUREMENT
120k (l%)
.Svout
@!+‘-1,;:
llOk 100k RCAL
50 k=
Q1
MTS102 MC7812 O+15Vor
=Greater
I*02u F
NOTE:
&+’
With Q1 at aknown temperature, ad)ust RCAL
to set output voltage to Vout =TEMP x10 mV,
Output of MTS1 02, 3, 5ISthen converted 10
Vout =10 mV/O -(“F, ‘C, or ‘K)
oto 150°c 120k(l 04)
t I I t
NOTE With 01 any@iQ2 %* identical temperature
adjust RC~$$\@~.j,~out =O000 V
~‘gov
470n 2N2646
l.Ok B2 ~B1 ‘“’~ensor output to ad!gltal format which may be
~::?~ used for direct connection to an MPU
~;,
...... Reference W.J Prudhomme,
Popular E/ectrontcs, December 1976, Page 62
IC1 =74?A
620 pF
+(= 6+10 ‘: ~
7ICIB
T
.
IF10k
loon
1
=
All resistors are 10Oh1/4 watt except 6.2 kwh!ch is 5%61/4 watt
output
(to MPU)
Motorola reserves the rlghf to make changes to anv products herein 10 Improve rel,ablllt~ funct!on or design Motorola does no! assume anv I,ab!l,tv ar,s,ng
OU1of !he application or use of anv product or C!rcult descrthd herein neither does It convev any license under Its Datenl r!ghts nor lhe rlghrs of others I
@Semiconductor Products Inc.
Pt8nl.d !n Sw,tzorland
,