MTSI02 MTS103 MTS105 SILICON TEMPERATURE ~- SENSORS designed for temperature sensing applications in automotive, consumer, and industrial products requiring low cost and high accuracy. Precise Temperature Accuracy Over Extreme Temperature MTS1 02: f2C from -40C to +150C Precise Temperature Coefficient Fast Thermal Time Constant 3 Seconds -- Liquid 8 Seconds -- Air Linear VBE versus Other Packages Temperature Curve Relationship Available Emitter-Base Voltage Collector Current -- ContlnuousOperating and Storage Junction Temperature Range `J vEB 4.0 +, i:cg,~pc Ic 100 <qp !~:amAd~ -55 to +~:.bo "" ,i,:::" Tstg Oc SECT. AA --R 6 Emitter q % s ] MILLIMETERS I MAX I DIM \ MIN 4,32 A 4,44 B c 318 D 0.41 041 F G~l14 H\J ! 241 K] 1270\ L 635! N; 203 P 292 R 1 343 036 s \ VBE (nom) = 620 mV 400 - VBE(nom)= 600 mV VBE (nom) = 580 mV & > 200 I -40 I 1 1 I 40 0 TA, I I I 80 I 120 I ~c I 160 AMBIENTTEMPERATURE (CI INCHES MIN MAX 5.33 0.170 5.21 0.175 419 ; 0.125 056 0.016 048 0.016 140 0.045 2.54 267,0095 I 0.500 \ 0.250 : 292' 0080 ]0115 : I I 0.135 041 iOO14 0.210 0.205 0.165 0.022. 0.019 0.055 0100. 0105 0115 i 4 0016 ; All JEDEC d,mens,ons and noles applv CASE 29-02 TO.92 @MOTOROLA INC j%. DS2536 R1 v ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwtse Characteristic Emitter-Base Breakdown Voltage (iE = 100 ~Adc, IC = O) Base-Emitter noted} Symbol Min Typ Max Unit V(BR)EBO 4.0 -- -- Vdc VBE 5B0 595 620 mV -- -- -- -- -- -- ?3.0 ?4.0 ?7.0 -- -- -- -- -- -- ?2.0 -2.28 -2.265 Voltage (Ic = 0.1 mA) Base-Emitter Voltage Matching, Note 1 (1c = 0.1 mA, TA= 25C 20.05CI .!,. X*V, $...:\t) rp,, , \:.*\ ,,\\l, .ty \ `~'.],, :,;3, "~`i$ f~.~i, "::',,,.,,, ., .?.),:". ~vBE mV MTS102 MTS103 MTSI05 Temperature Matching Accuracy, Note 2 (TI = 40C, T2 = +150C, TA= 25C =0.05C) LT MTS102 MTS103 MTS105 ,,,1$$ ,-- ~ Temperature Coefflclent, Notes 3 and 4 (VBE = 595 mV, Ic = 0,1 mA) TC Thermal Time Constant Liquid Flowing Air `TH JTC CHARACTERISTICS Characteristic Thermal Resistance, Junct!on to Amblen~ labeled w!th!n w!lh All dev)ces mean For nominal IS In mV group V6E range or package value an lnd)vldual In the The TC as defined For olher 5 anyone the wlfhrn nonllnear!!y 4 - mV/c C mV Unit Oc. w ?,.<,, ,:($. 4':.{>,,i?~.,~e.,,,t<h. 1 All dev!ces 3 LVBE <J' *$\, "'$<\j NOTES 2 -- ,fi~,~33 ,;.:,;+~ti::~,,?f.$ ,,,*:*,?,: +:9, $.~ ~~.$!t - ,,$i ,*!.,+~`t?{,. ~ ,\.\. "J.:.i.' Symbol Max `~t.~$ ,.,~ " \,.t ReJA i `~$?*c,:\ 200 Dependence of TC on VBE @ 25'C (Note 4, Figure 3) THERMAL -- -- group -40 V~E values the VBE at 25 Cotherthan CC The For max,mum accuracv temperature tn Note Nonltnearitv I!near regression value of the 595 oi lhls IC should Ihe loler~~f<~rifif!ed . ,, `:$1! 1. WIII track w!thln<~e Sbecofled IS lyp!cally le:?~~hao =1 -C In th!s for VBE versu$~~$ralure TC must mV, the TC must TC IS typically accuracy for VBEto group as described to -150CC by a least-square nomtnal for !hal WIII be matched ~0 01 over be adj~~e'aior l%e dependence $,Kh.>: *,\\,*.!be cof$ecx@DStng the equallon the in the elec!r!cal temperature range range of the TC= -2 character! accuracv (See Ftgure -40 to.150C Includes Each dev!ce varlattons )n TC WIII be VBE, and 4) for a nominal TC on VBE {see 265+0 stlcstable 003(VBE Note VBE of 595 mV at 25'C 4) 595) where VBE IS in mVandthe TC rn$M$~J~,@* ~+ nol excee~.~,~$.$ $$ee , *.<, .':s$i.k. >' :T~y.!* >:;+ !. ~-~ ~<:y,he, ~i'$ `,:':$:), .,$, ~,> 1. Ffgure 2] FIGURE 620 3 - TEMPERATURE BASE-EMITTER COEFFICIENT VOLTAGE versus 1 TC= -2.265 + 00033 [V8E-5951 & s s > a E 600 5 / ; u m s > ., [ 001 !I, 002 lil; 005 I ,, 0? 02 05 10 CURRENT lmA, Ic COLLECTOR 20 MOTOROLA 50 I 10 580 -232 -228 Tc TEMPERATURE -224 -2 COEFFICIENT [mV/'Cl Semiconductor Products Inc. @ . .2n. -716 --- FIGURE 4 - LINEARITY b. If VBE(nom) ERROR versus TEMPERATURE e islessthan determine TC from orgreaterthan 595 mV the relationship described in Note 4. (1) TC .2 0 =+10 g a 0 aa : E a -2.265 Figure - / -- + 0.0033 (VBE - 595) or see 3, \ \ { \ o / ` \ z-lo 1 -20 -40 -20 20 0 40 60 80 100 120 140 160 TEMPERATURE ("CI APPLICATIONS The base connected and collector together INFORMATION leads of the In the operating They are not internally device ci;cuit should (pins2 be and 3) connected ?nq 1 , 1 I I 1 J `u" 0 -40 40 120 80 TA, AMBIENTTEMPERATURE ICI 4. Given any measured accuracy value MTS103-t3C, the 5 above Higher curve, ,,,, &&#*Q- Customer receives The shipment nominal a shipment consists VBE values. of MTS102 of three groups . Iinearltyerror. of have been Group 1: VBE (nom)= 595 mV 2: VBE (nom)= 580 mV Temperature Group 3: VBE (nom)= 620 mV Derrington, -- VBE versus 1. Determine Temperature value a. If VBE(nom)= accuracies current, with can IC, is controlled and tnwhich Characteristics C, equation to react practical these 2 be achieved to compensate Using this concept built from sensor for In the clrcults shave sensing", pat o'Neiland Carl Electronics 1979. Reiationshlp of TC: 595 mV, TC=-2.265 the Electrical - z2 read from yielded accuracies within fO.l C and tO 01 `C Reference `"Transistors -- A Hot Tip for Accurate Group Find or calculated temperature accordance of TA (to the MTS102 MTS105-t5C)canbe if the collector `f~$~.~'rces. `t#ifferent VBE, the value specified: mV/Cfrom table. MOTOROLA Semiconductor Products Inc. @ # TYPICAL FIGURE 5 - ABSOLUTE TEMPERATURE CIRCUITS FIGURE MEASUREMENT 6 - DIFFERENTIAL TEMPERATURE MEASUREMENT o to 150c 120k 120k(l (l%) t I 04) I t .Svout RCAL !+`-1,;: llOk 100k 50 k = @= Q1 MTS102 O+15Vor Greater MC7812 I *02u +' & F NOTE: With Q1 at a known temperature, ad)ust RCAL to set output voltage to Vout = TEMP x 10 mV, Output of MTS1 02, 3, 5 IS then converted 10 Vout = 10 mV/O - ("F, `C, or `K) `gov ~ 470n l.Ok NOTE With 01 any@iQ2 %* identical temperature RC~$$\@~.j,~out = O 000 V adjust 2N2646 B2 ~ `"'~ensor output to a d!gltal format which may be ~::?~ used for direct connection to an MPU B1 ~;, ..... Reference Popular W.J E/ectrontcs, Prudhomme, December 1976, Page 62 IC1 =74?A 620 pF +(= 6 + 7 `: 10 ICIB . ~ output (to MPU) T 10k IF loon 1 = All resistors are 10Oh 1/4 watt except 6.2 k wh!ch is 5%61 /4 watt Motorola reserves the rlghf to make changes to anv products herein 10 Improve rel,ablllt~ funct!on or design Motorola does no! assume anv I,ab!l,tv ar, s,ng OU1of !he application or use of anv product or C!rcult descrthd herein neither does It convev any license under Its Datenl r!ghts nor lhe rlghrs of others Semiconductor Products Inc. @ Pt8nl.d !n Sw,tzorland , I