© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 11 1Publication Order Number:
2N6107/D
2N6107, 2N6109, 2N6111 (PNP),
2N6288, 2N6292 (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO 30
50
70
Vdc
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCB 40
60
80
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC7.0 Adc
Collector Current − Peak ICM 10 Adc
Base Current IB3.0 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD40
0.32 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 3.125 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
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MARKING DIAGRAM
2N6xxxG
AYWW
2N6xxx = Specific Device Code
xxx = See Table on Page 4
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet
.
ORDERING INFORMATION
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
TO−220
CASE 221A
STYLE 1
123
4
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO(sus)
30
50
70
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N6111, 2N6288
(VCE = 40 Vdc, IB = 0)
2N6109
(VCE = 60 Vdc, IB = 0)
2N6107, 2N6292
ICEO
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6107, 2N6292
ICEX
100
100
100
2.0
2.0
2.0
mAdc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc)
All Devices
hFE
30
30
30
2.3
150
150
150
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc) VCE(sat) 3.5 Vdc
Base−Emitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc) VBE(on) 3.0 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
2N6288, 2N6292
2N6107, 2N6109, 2N6111
fT
4.0
10
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob 250 pF
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT = |hfe| ftest
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
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3
40
00 20 40 60 80 100 120 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
20
30
140
10
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02 0.1 0.2 0.3 0.5 2.0 3.0 7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
t, TIME (s)μ
tr
1.0 5.0
td @ VBE(off) 5.0 V
0.07
0.03
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
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4
15
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.15 5.0 10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
7.0
IC,
CO
LLE
C
T
O
R
C
URRENT (AMP
S
)
dc
0.1 ms
1.0
0.5
0.2
0.3
2.0 3.0
0.5 ms
20 30 50 70 100
3.0
0.7
0.1
ms
5.0 ms
There are two limitations on the power handling ability o f
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
0.5
VR, REVERSE VOLTAGE (VOLTS)
30 3.0 5.0 501.0 2.0
C, CAPACITANCE (pF)
200
70
50
TJ = 25°C
Cib
100
Figure 6. Turn−Off Time
10 20 30
5.0
0.07
Figure 7. Capacitance
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.7
0.5
0.3
0.05 0.1 0.2 0.3 0.5 2.0 3.0 7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
t, TIME (s)μ
tr
1.0 5.0
0.2
0.07
ts
Cob
ORDERING INFORMATION
Device Device Marking Package Shipping
2N6107G 2N6107 TO−220
(Pb−Free) 50 Units / Rail
2N6109G 2N6109 TO−220
(Pb−Free) 50 Units / Rail
2N6111G 2N6111 TO−220
(Pb−Free) 50 Units / Rail
2N6288G 2N6288 TO−220
(Pb−Free) 50 Units / Rail
2N6292G 2N6292 TO−220
(Pb−Free) 50 Units / Rail
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
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5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
2N6107/D
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