war DFOO5M-DF10M VISHAY Vishay Lite-On Power Semiconductor 1.0A Glass Passivated Bridge Rectifier Features @ Glass passivated die construction Diffused junction Low forward voltage drop, high current capability @ Surge overload rating to 50A peak Designed for printed circuit board applications Plastic material - UL Recognition flammability classification 94V-0 14.485 @ This series is UL listed under recognized component index, file number E95060 Absolute Maximum Ratings Tj = 25C epetitive peak reverse voltage =Working peak reverse voltage 100 Vv =DC Blocking voltage 200 V 400 Vv 600 Vv 800 Vv 1000 Vv Peak forward surge current lesm 50 A Average forward current Ta=40C lFay 1 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ir=1A Ve 1.1 Vv Reverse current Tp=25C IR 10 | pA Ta=1 25C IR 500 vA I@t Rating for fusing 4 10.4 | A@s Diode capacitance VpR=4V, f=1MHz Cp 25 pF Thermal resistance on PC board with 5mm? RthuA 110 KW junction to ambient Rev. A2, 24-Jun-98 1 (5)DFOO5MDF10M Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) leay Average Forward Current (A) 18605 1.0 60 or load 05 40 60 80 100 120 140 Tamb Ambient Temperature (C ) Figure 1. Max. Average Forward Current vs. |- Forward Current (A) 15606 Ambient Temperature 10 1.0 0.1 Tj = 25C IF Pulse Width = 300 ps 2% Duty Cycle 0.01 0.4 0.6 0.8 10 1.2 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage 14 legy7 Peak Forward Surge Current (A) 18607 60 50 40 30 20 10 Single Half Sine-Wave (JEDEC Method) N\ 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Cp Diode Capacitance ( pF ) 15608 100 10 Number of Cycles T= 25C f=1MHz Vsig=50 mV p-p 10 100 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Rev. A2, 24-Jun-98DFOOSMDF10M 100 = Tj = 125C a ~ 10 < 2 5 oO o 1.0 9 o > oc I ie (Ol 0.01 0 20 40 60 80 100 120 140 15609 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Vishay Lite-On Power Semiconductor Rev. A2, 24-Jun-98DFOO5MDF10M way Vishay Lite-On Power Semiconductor VISHAY Dimensions in mm A _ HH. : DF-M Dim Min Max J , Al 7.40 7.90 = B 6.20 6.50 4 | | f" C | 0.009 0.25 a T D 1.2] 2.03 Ld E | 7.60 8.90 E G 3.81 4.69 K H 8.13 B51 J 2.40 3.40 ro K 5.00 5.20 7 tt P[ ose | 058 All Dimensions in mm ~~ 6 technical drawings according to DIN specifications 14466 Case: molded plastic Polarity: as marked on case Approx. weight: 0.38 grams Mounting position: any Marking: type number 4 (5) Rev. A2, 24-Jun-98be eure vel DFOO5M-DF10M ISHAY Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Rev. A2, 24-Jun-98 5 (5)