SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M FEATURES D G A J 2 *High Voltage : BC846W VCEO=65V. *For Complementary With PNP Type BC856W/857W/858W. 3 1 CHARACTERISTIC C MAXIMUM RATING (Ta=25) SYMBOL RATING BC847W H UNIT N N K MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 _ 0.10 0.42 + 0.10 MIN 0.1 MAX 80 BC846W Collector-Base Voltage L P DIM A B C D E G H J K L M N P VCBO 50 BC848W 30 BC846W 65 V 1. EMITTER 2. BASE 3. COLLECTOR Collector-Emitter Voltage Emitter-Base Voltage BC847W VCEO 45 BC848W 30 BC846W 6 BC847W VEBO V USM 6 BC848W V 5 Marking Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 Tstg -55150 Lot No. Storage Temperature Range Type Name MARK SPEC TYPE BC846W-A BC846W-B BC847W-A BC847W-B BC847W-C BC848W-A BC848W-B BC848W-C MARK 1A 1B 1E 1F 1G 1J 1K 1L 2008. 8. 29 Revision No : 4 1/3 BC846W/7W/8W ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=30V, IE=0 BC846W BC847W DC Current Gain (Note) hFE VCE=5V, IC=2mA BC848W MIN. TYP. MAX. UNIT - - 15 nA 110 - 450 110 - 800 110 - 800 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6 VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 - VBE(sat) 2 IC=100mA, IB=5mA - 0.9 - VBE(ON) 1 VCE=5V, IC=2mA 0.58 - 0.7 V VBE(ON) 2 VCE=5V, IC=10mA - - 0.75 V VCE=5V, IC=10mA, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF - 1.0 10 dB Collector-Emitter Saturation Voltage V V Base-Emitter Saturation Voltage Base-Emitter Voltage fT Transition Frequency Cob Collector Output Capacitance VCE=6V, IC=0.1mA Noise Figure NF Rg=10k, f=1kHz NOTE : According to the value of hFE the BC846W, BC847W, BC848W are classified as follows. CLASSIFICATION hFE 2008. 8. 29 A B C BC846W 110220 200450 - BC847W 110220 200450 420800 BC848W 110220 200450 420800 Revision No : 4 2/3 BC846W/7W/8W C - V CE I C - V BE 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I I B =400A I B =350A I B =300A 80 I B =250A 60 I B =200A I B =150A 40 I B =100A 20 I B =50A 0 100 VCE =5V 50 30 10 5 3 1 0.5 0.3 0.1 0 4 8 12 16 20 0.2 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C VBE(sat) , V CE(sat) - I 1k C 10 I C /I B =20 V CE =5V 500 SATURATION VOLTAGE V BE(sat) , VCE(sat) (V) DC CURRENT GAIN h FE 0.4 300 100 50 30 10 3 1 V BE(sat) 0.3 0.1 V CE(sat) 0.03 0.01 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) C ob - V CB CAPACITANCE C ob (pF) 20 f=1MHz I E =0 10 5 3 1 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) 2008. 8. 29 Revision No : 4 3/3