1SS226 SILICON EPITAXIAL
PLANAR DIODE
PRV : 85 Volts
Io : 100 mA
FEATURES :
* Small package
* Low forward voltage
* Fast reverse recovery time
* Small total capacitance
* Ultra high speed switching application
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* Marking Code : FC
MAXIMUM RATINGS AND THERMAL CHARACTERISTIC
S
(Ta =25 °C)
Parameter Symbol Unit
Maximum Peak Reverse Voltage VRM 85 V
Reverse Voltage VR80 V
Maximum Peak Forward Current IFM 300 mA
Average Forward Current IF(AV) 100 mA
Surge Current (10 ms) IFSM 2A
Power Dissipation PD150 mW
Junction Temperature TJ°C
Storage Temperature Range TSTG °C
ELECTRICAL CHARACTERISTICS (Ta =25 °C)
Parameter Test Condition Symbol Min. Max. Unit
Forward Voltage IF = 100 mA VF - 1.2 V
Reverse Current VR = 80 V IR- 0.5 µA
Total Capacitance VR = 0 V, f = 1 MHz CT-3pF
Reverse Recovery Time IR = 10 mA Trr ns
Page 1 of 2 Rev. 01 : September 20, 2006
-4
Value
-55 to +150
150
3
12
3
12
1.02
0.89
2.04
1.78
3.10
2.70
Dimensions in millimeters
0.19
0.08
3.0
2.2
0.50
0.35
0.100
0
.
0
1
3
1.40
0.95
SOT-23
1.65
1.20
Certificate TH97/10561QM Certificate TW00/17276EM
FIG.1 - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS.
FORWARD VOLTAGE REVERSE VOLTAGE
0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100
FIG.3 - TOTAL CAPACITANCE VS. FIG.4 - REVERSE RECOVERY TIME VS.
REVERSE VOLTAGE FORWARD CURRENT
0.1 1.0 10 100 0.1 1.0 10 100
Page 2 of 2 Rev. 01 : September 20, 2006
RATINGS AND CHARACTERISTIC CURVES ( 1SS226 )
REVERSE VOLTAGE, (V) FORWARD VOLTAGE, (V)
FORWARD CURRENT, (mA)
100
10
1
0.1
REVERSE CURRENT, (μA)
0.001
0.01
0.1
1.0
10
0.01
TOTAL CAPACITANCE, (pF)
FORWARD CURRENT, (mA)
0.5
0
2.0
2.5
3.0
200
1.0
1.5
REVERSE VOLTAGE, (V)
REVERSE RECOVERY TIME, (ns)
100
10
1
0.1
f = 1 MHz
Ta = 25 °C
Ta = 25 °C
Ta = 25 °C
Ta = 100 °C
Ta = 100 °C
Ta = 25 °C
Certificate TH97/10561QM Certificate TW00/17276EM
