1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
1.8 VOLT THRU 43 VOLT
500mW, 5% TOLERANCE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4678 series
devices are silicon Zener diodes designed for
applications requiring an extremely low operating
current (50μA), and low leakage.
MAXIMUM RATINGS: (TL=75°C) SYMBOL UNITS
Power Dissipation PD 500 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
MARKING: FULL PART NUMBER
Type
Zener
Voltage
VZ @ IZT
Test
Current
Maximum
Reverse Leakage
Current
Maximum
Voltage
Change*
Maximum
Regulator
Current
MIN NOM MAX IZT IR @ VRΔVZIZM
V V V μA μA V V mA
1N4678 1.710 1.8 1.890 50 7.5 1.0 0.70 120.0
1N4679 1.900 2.0 2.100 50 5.0 1.0 0.70 110.0
1N4680 2.090 2.2 2.310 50 4.0 1.0 0.75 100.0
1N4681 2.280 2.4 2.520 50 2.0 1.0 0.80 95.0
1N4682 2.565 2.7 2.835 50 1.0 1.0 0.85 90.0
1N4683 2.850 3.0 3.150 50 0.8 1.0 0.90 85.0
1N4684 3.135 3.3 3.465 50 7.5 1.5 0.95 80.0
1N4685 3.420 3.6 3.780 50 7.5 2.0 0.95 75.0
1N4686 3.705 3.9 4.095 50 5.0 2.0 0.97 70.0
1N4687 4.085 4.3 4.515 50 4.0 2.0 0.99 65.0
1N4688 4.465 4.7 4.935 50 10 3.0 0.99 60.0
1N4689 4.845 5.1 5.355 50 10 3.0 0.97 55.0
1N4690 5.320 5.6 5.880 50 10 4.0 0.96 50.0
1N4691 5.890 6.2 6.510 50 10 5.0 0.95 45.0
1N4692 6.460 6.8 7.140 50 10 5.1 0.90 35.0
1N4693 7.125 7.5 7.875 50 10 5.7 0.75 31.8
1N4694 7.790 8.2 8.610 50 1.0 6.2 0.50 29.0
1N4695 8.265 8.7 9.135 50 1.0 6.6 0.10 27.6
1N4696 8.645 9.1 9.555 50 1.0 6.9 0.08 26.2
1N4697 9.500 10 10.50 50 1.0 7.6 0.10 24.8
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
DO-35 CASE
R4 (31-July 2013)
www.centralsemi.com
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
1.8 VOLT THRU 43 VOLT
500mW, 5% TOLERANCE
DO-35 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
Type
Zener
Voltage
VZ @ IZT
Test
Current
Maximum
Reverse Leakage
Current
Maximum
Voltage
Change*
Maximum
Regulator
Current
MIN NOM MAX IZT IR @ VRΔVZIZM
V V V μA μA V V mA
1N4698 10.45 11 11.55 50 0.05 8.4 0.11 21.6
1N4699 11.40 12 12.60 50 0.05 9.1 0.12 20.4
1N4700 12.35 13 13.65 50 0.05 9.8 0.13 19.0
1N4701 13.30 14 14.70 50 0.05 10.6 0.14 17.5
1N4702 14.25 15 15.75 50 0.05 11.4 0.15 16.3
1N4703 15.20 16 16.80 50 0.05 12.1 0.16 15.4
1N4704 16.15 17 17.85 50 0.05 12.9 0.17 14.5
1N4705 17.10 18 18.90 50 0.05 13.6 0.18 13.2
1N4706 18.05 19 19.95 50 0.05 14.4 0.19 12.5
1N4707 19.00 20 21.00 50 0.01 15.2 0.20 11.9
1N4708 20.90 22 23.10 50 0.01 16.7 0.22 10.8
1N4709 22.80 24 25.20 50 0.01 18.2 0.24 9.9
1N4710 23.75 25 26.25 50 0.01 19.0 0.25 9.5
1N4711 25.65 27 28.35 50 0.01 20.4 0.27 8.8
1N4712 26.60 28 29.40 50 0.01 21.2 0.28 8.5
1N4713 28.50 30 31.50 50 0.01 22.8 0.30 7.9
1N4714 31.35 33 34.65 50 0.01 25.0 0.33 7.2
1N4715 34.20 36 37.80 50 0.01 27.3 0.36 6.6
1N4716 37.05 39 40.95 50 0.01 29.6 0.39 6.1
1N4717 40.85 43 45.15 50 0.01 32.6 0.43 5.5
AB
C
DD
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
www.centralsemi.com
R4 (31-July 2013)
