2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 1
October 2011
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are base d on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Symbol Parameter Value Units
VCEO Collector-Emitter V oltage 40 V
VCBO Collector-Base V oltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Units
2N3904 *MMBT3904 **PZT3904
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
2N3904 MMBT3904 PZT3904
EBC TO-92 SOT-23 SOT-223
Mark:1A
C
B
EE
BC
C
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Ordering Information
Symbol Parameter Test Condition Min. Max. Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Vo ltage IC = 1.0mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown V o ltage IE = 10μA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30V, VEB = 3V 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1mA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
40
70
100
60
30
300
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 0.2
0.3 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10mA, VCE = 20V,
f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 5.0V, IE = 0,
f = 1.0MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0,
f = 1.0MHz 8.0 pF
NF Noise Figure IC = 100μA, VCE = 5.0V,
RS = 1.0kΩ,
f = 10Hz to 15.7kHz
5.0 dB
SWITCHING CHARACTERISTICS
tdDelay Time VCC = 3.0V, VBE = 0.5V
IC = 10mA, IB1 = 1.0mA 35 ns
trRise Time 35 ns
tsStorage Time VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA 200 ns
tfFall Time 50 ns
Part Number Marking Package Packing Method Pack Qty
2N3904BU 2N3904 TO-92 BULK 10000
2N3904TA 2N3904 TO-92 AMMO 2000
2N3904TAR 2N3904 TO-92 AMMO 2000
2N3904TF 2N3904 TO-92 TAPE REEL 2000
2N3904TFR 2N3904 TO-92 TAPE REEL 2000
MMBT3904 1A SOT-23 TAPE REEL 30 00
MMBT3904_D87Z 1A SOT-23 TAPE REEL 10000
PZT3904 3904 SOT-223 TAPE REEL 2500
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 3
Typical Performance Characteristics
Base-E mi tter ON Voltage v s
Collector C u rren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β
= 10
25 °C
125 °C
- 40 °C
Colle ctor-Emitter Saturation
Voltage vs Collect o r Curren t
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β
= 10
125 °C
- 40 °C
Collect or- Cut of f Curre nt
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typ ical Pu lsed C ur r ent Gai n
vs Collector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPI CA L PULSED CU RR EN T GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
β
β
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 4
Typical Performance Characteristics (continued)
Power Di ssipation vs
A mbient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DI SSI PATION (W)
D
o
SOT-223
SOT-23
TO-92
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIG URE (dB)
V = 5.0V
CE
I = 100
μ
A, R = 500
Ω
CS
I = 1.0 mA
R = 200
Ω
C
S
I = 50
μ
A
R = 1.0 k
Ω
C
S
I = 0.5 mA
R = 200
Ω
C
S
k
Ω
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100
μ
A
C
I = 1.0 mA
C
S
I = 50
μ
A
C
I = 5.0 mA
C
θ
- DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
Turn-On Time vs Collector Cur ren t
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Colle ctor Curr en t
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
Ω
θ
μ
A
kΩμ
A
μ
A
Ω
ΩμA
( kΩ )
θ
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 5
Typical Performance Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURREN T (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125° C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Cu rr ent Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1 .0 kHz
T = 25 C
A o
Output Admi tta n c e
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPUT ADM IT TAN CE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kH z
T = 25 C
A o
μ
Inpu t I mpedance
0.1 1 10
0.1
1
10
100
I - CO LLEC TOR CURRENT (mA)
h - I NPU T I M PEDANC E (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
Voltage Feedback Ratio
0.1 1 10
1
2
3
4
5
7
10
I - COLLECTO R CURRENT ( mA)
h - V O LTAGE F EED BACK RAT IO (x1 0 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4
(kΩ)
μn
h
os
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 6
Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6 V
10 < <
< <
< t1 <<
<<
< 500 μμ
μμ
μs 10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
C1 <<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
300ns
=
< 1.0ns
< 4.0pF
< 4.0pF
< 1.0ns
=
10 < t1 < 500 μs
Ω
Ω
kΩ
kΩ
© Fairchild Semiconductor Corporation www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, ow ned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool¥
AccuPower¥
Auto-SPM¥
AX-CAP¥*
BitSiC®
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
ESBC¥
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
FAST®
FastvCore¥
FETBench¥
FlashWriter®*
FPS¥
F-PFS¥
FRFET®
Global Power ResourceSM
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MicroPak2¥
MillerDrive¥
MotionMax¥
Motion-SPM¥
mWSaver¥
OptoHiT¥
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM¥
Power-SPM¥
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
SMART START¥
SPM®
STEALTH¥
SuperFET®
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
®*
The Power Franchise
®
TinyBoost¥
TinyBuck¥
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC®
TriFault Detect¥
TRUECURRENT®*
PSerDes¥
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a)
are intended for surgical implant into the body or (b) support or
sustain life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external w ebsite,
www .fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselv es and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited abov e. Products customers buy either from Fairchild directly or fr om Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fa irchild's full range of up-to-date
technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and w ill appropriately address any warranty issues that
may arise. Fairchild will not prov ide any w arranty cov erage or other assistance for parts bought from Unauthorized Sources. Fairchild is comm itted to combat this
global problem and encourage our customers to do their part in stopping this practice by buy ing direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Pr oduct Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only. Rev. I57
