2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features * This device is designed as a general purpose amplifier and switch. * The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E TO-92 SOT-23 Absolute Maximum Ratings* Symbol Value Units 40 V Collector-Base Voltage 60 V Emitter-Base Voltage 6.0 V 200 mA -55 to +150 C Collector-Emitter Voltage VCBO VEBO IC B Ta = 25C unless otherwise noted Parameter VCEO TJ, Tstg SOT-223 B Mark:1A EBC C Collector Current - Continuous Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD Ta = 25C unless otherwise noted Max. Parameter 2N3904 625 5.0 Total Device Dissipation Derate above 25C RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 *MMBT3904 350 2.8 **PZT3904 1,000 8.0 357 125 Units mW mW/C C/W C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 www.fairchildsemi.com 1 2N3904 / MMBT3904 / PZT3904 -- NPN General Purpose Amplifier October 2011 Symbol Ta = 25C unless otherwise noted Parameter Test Condition Min. Max. Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IBL ICEX IC = 1.0mA, IB = 0 40 V IC = 10A, IE = 0 60 V IE = 10A, IC = 0 6.0 V Base Cutoff Current VCE = 30V, VEB = 3V 50 nA Collector Cutoff Current VCE = 30V, VEB = 3V 50 nA ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1mA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V 40 70 100 60 30 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.2 0.3 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.65 0.85 0.95 V V Current Gain - Bandwidth Product IC = 10mA, VCE = 20V, f = 100MHz 300 Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz 4.0 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 8.0 pF NF Noise Figure IC = 100A, VCE = 5.0V, RS = 1.0k, f = 10Hz to 15.7kHz 5.0 dB VCC = 3.0V, VBE = 0.5V IC = 10mA, IB1 = 1.0mA 35 ns SMALL SIGNAL CHARACTERISTICS fT MHz SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 35 ns 200 ns 50 ns * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% Ordering Information Part Number Marking Package Packing Method Pack Qty 2N3904BU 2N3904 TO-92 BULK 10000 2N3904TA 2N3904 TO-92 AMMO 2000 2N3904TAR 2N3904 TO-92 AMMO 2000 2N3904TF 2N3904 TO-92 TAPE REEL 2000 2N3904TFR 2N3904 TO-92 TAPE REEL 2000 MMBT3904 1A SOT-23 TAPE REEL 3000 MMBT3904_D87Z 1A SOT-23 TAPE REEL 10000 PZT3904 3904 SOT-223 TAPE REEL 2500 (c) 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 www.fairchildsemi.com 2 2N3904 / MMBT3904 / PZT3904 -- NPN General Purpose Amplifier Electrical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 V CE = 5V 400 125 C 300 25 C 200 - 40 C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current = 10 - 40 C 25 C 0.6 125 C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 C 0.1 25 C 0.05 - 40 C 0.1 1 VCE = 5V 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 4 3 C ibo 2 C obo 1 0.1 150 (c) 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 5 1 10 REVERSE BIAS VOLTAGE (V) 100 www.fairchildsemi.com 3 2N3904 / MMBT3904 / PZT3904 -- NPN General Purpose Amplifier Typical Performance Characteristics Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 A I C = 50 A R S = 1.0 k k 8 I C = 0.5 mA R S = 200 6 4 2 A, R S = 500 I C = 100 A 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA 6 A I C = 100 A 4 2 0 0.1 100 V CE = 40V I C = 10 mA PD - POWER DISSIPATION (W) - CURRENT GAIN (dB) fe h 10 100 f - FREQUENCY (MHz) 1000 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 Turn-On Time vs Collector Current 500 I B1 = I B2 = VCC = 40V 10 t r - RISE TIME (ns) TIME (nS) 15V 2.0V 10 10 I C - COLLECTOR CURRENT (mA) 100 150 I B1 = I B2 = Ic 10 T J = 25C T J = 125C 5 100 (c) 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 125 10 t d @ VCB = 0V 1 50 75 100 TEMPERATURE (o C) Rise Time vs Collector Current t r @ V CC = 3.0V 5 25 500 Ic 40V 100 100 1 - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 1 10 k) ) R S - SOURCE RESISTANCE ((k Power Dissipation vs Ambient Temperature Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 A I C = 50 A 8 1 10 I C - COLLECTOR CURRENT (mA) 100 www.fairchildsemi.com 4 2N3904 / MMBT3904 / PZT3904 -- NPN General Purpose Amplifier Typical Performance Characteristics (continued) Storage Time vs Collector Current I B1 = I B2 = T J = 25C Fall Time vs Collector Current 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125C 10 5 T J = 125C 100 T J = 25C 1 10 I C - COLLECTOR CURRENT (mA) 5 100 1 10 I C - COLLECTOR CURRENT (mA) Current Gain V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 1 I C - COLLECTOR CURRENT (mA) 10 (c) 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Voltage Feedback Ratio ) _4 h re - VOLTAGE FEEDBACK RATIO (x10 V CE = 10 V f = 1.0 kHz T A = 25oC 10 0.1 0.1 100 10 Input Impedance 100 100 Output Admittance mhos) h oe - OUTPUT ADMITTANCE ( nhos h fe - CURRENT GAIN VCC = 40V 10 500 (k) ) h ie - INPUT IMPEDANCE (k Ic 10 10 7 V CE = 10 V f = 1.0 kHz T A = 25oC 5 4 3 2 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 www.fairchildsemi.com 5 2N3904 / MMBT3904 / PZT3904 -- NPN General Purpose Amplifier Typical Performance Characteristics (continued) 2N3904 / MMBT3904 / PZT3904 -- NPN General Purpose Amplifier Test Circuits 3.0 V 275 300ns 300 ns 10.6 V Duty Cycle == 2% k 10 K 0 C1 << 4.0pF 4.0 pF - 0.5 V 1.0 ns << 1.0ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 500500 s s 10 <<t1 t<1 < t1 275 10.9 V Duty Cycle == 2% k 10 K 0 < 4.0pF C1 < 4.0 pF 1N916 - 9.1 V << 1.0ns 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit (c) 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS F-PFS FRFET(R) SM Global Power Resource Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM mWSaver OptoHiT OPTOLOGIC(R) OPTOPLANAR(R) 2Cool AccuPower Auto-SPM AX-CAP* BitSiC(R) Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FlashWriter(R)* PDP SPM Power-SPM PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R) * The Power Franchise(R) TinyBoost TinyBuck TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC(R) TriFault Detect TRUECURRENT(R)* PSerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM (R) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component in any component of a life support, device, or 1. Life support devices or systems are devices or systems which, (a) system whose failure to perform can be reasonably expected to are intended for surgical implant into the body or (b) support or cause the failure of the life support device or system, or to affect its sustain life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I57 (c) Fairchild Semiconductor Corporation www.fairchildsemi.com