2009. 2. 19 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Complementary to BC807.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE(1) Classification 16:100～250 , 25:160～400 , 40:250～630
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain (Note)
hFE(1) VCE=1V, IC=100mA 100 - 630
hFE(2) VCE=1V, IC=500mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC*350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
TYPE BC817-16 BC817-25 BC817-40
MARK 6A 6B 6C
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
MARK SPEC
Type Name
Marking
Lot No.
2009. 2. 19 2/2
BC817
Revision No : 5
C
COLLECTOR CURRENT I (mA)
0
10
DC CURRENT GAIN hFE
1000300
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V
h - I
1
COLLECTOR CURRENT I (mA)
C
0.2
BASE-EMITTER VOLTAGE V (V)
BE
V - I
C
COLLECTOR CURRENT I (mA)
300 1000
0.01
CE(sat)
COLLECTOR-EMITTER SATURATION
123456
200
400
600
800
I - V
CBE
0.4 0.6 0.8 1.0
3
10
30
100
300
1000 COMMON EMITTER
V =1V
CE
FE C
1003010
30
100
300
1000
50
500
COMMON EMITTER
V =1V
CE
CE(sat) C
VOLTAGE V (V)
1003010
0.03
0.1
0.3
1
3
COMMON EMITTER
I /I =25
CB
CE
V =5V
COMMON EMITTER
500
100
30
10 30 100
10 100030031
COLLECTOR CURRENT I (mA)
C
C
T
f - I
TRANSITION FREQUENCY
T
f (MHz)
300 Ta=25 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=25 C
Ta=-25 C
Ta=100 C
Ta=100 C
P (mW)
C
0
AMBIENT TEMPERATURE Ta
(
C
)
C
P - Ta
COLLECTOR POWER DISSIPATION
25 50 75 100 125 150 175
0
100
300
500
200
400
COMMON EMITTER
Ta=25 C
5
6
7
8
4
3
2
0
I =1mA
B
