SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES D *Complementary to BC807. 3 H G A 2 1 MAXIMUM RATING (Ta=25) Q UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA PC* 350 mW Tj 150 Tstg -55150 P P K J RATING N SYMBOL C CHARACTERISTIC DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE Collector Power Dissipation Junction Temperature Storage Temperature Range 3. COLLECTOR SOT-23 * : Package Mounted On 99.9% Alumina 10x8x0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A hFE(1) VCE=1V, IC=100mA 100 - 630 hFE(2) VCE=1V, IC=500mA 40 - - VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V Transition Frequency fT 100 - - MHz - 5 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz 16:100250 , 25:160400 , 40:250630 Marking MARK SPEC Lot No. TYPE BC817-16 BC817-25 BC817-40 MARK 6A 6B 6C 2009. 2. 19 Revision No : 5 Type Name 1/2 BC817 h FE - I C I C - VCE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE =1V 500 300 Ta=100 C Ta=25 C 100 50 Ta=-25 C 30 800 COMMON EMITTER Ta=25 C 7 6 5 4 400 3 2 200 I B =1mA 0 0 100 300 0 1000 1 2 100 0.01 10 C Ta= 0.03 Ta=100 C Ta=-25 C 30 100 300 C 100 30 10 3 1 0.2 1000 0.6 0.8 1.0 fT - I C P C - Ta COMMON EMITTER Ta=25 C VCE =5V 100 30 10 3 10 30 100 300 1000 500 400 300 200 100 0 0 COLLECTOR CURRENT I C (mA) 2009. 2. 19 0.4 BASE-EMITTER VOLTAGE V BE (V) 500 TRANSITION FREQUENCY f T (MHz) 300 COLLECTOR CURRENT I C (mA) 300 6 COMMON EMITTER VCE =1V 100 0.3 1000 Ta= COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /IB =25 COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 3 0.1 5 I C - V BE VCE(sat) - I C Ta=25 C 4 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT IC (mA) 1 3 Ta=25 C 30 C 10 10 1 8 600 Ta= 25 DC CURRENT GAIN h FE 1000 Revision No : 5 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2