1N 3833 Trigger-Di =1N3831: Ub=26...34V 31a DO-7 430..., 4E30M... 1N 3834 Trigger-Di =1N3831: Ub=31.,.39V 31a DO-7 4E40..., 4E40M... 1N 3835 Trigger-Di =1N3831: Ub=36.,.44V 31a DO-7 4E40..., 4E40M... 1N 3836 Trigger-Di =1N3831: Ub=41...49V 31a D0-7 4E50..., 4E50M... 1N 3837 Trigger-Di =1N3831: Ub=46...54V Sta DO-7 4E50..., 4E50M... 1N 3838 Trigger-Di =1N3831: Ub=90...110V 3la D0-7 4E100..., 4E100M... 1N 3839 Trigger-Di =1N3831: Ub=16...24V, [h=14...50mA 3ta DO-7 420..., 4E20M... 1N 3840 Trigger-Di =1N3839: Ub=21...29V, Ih=14...50mA 31a DO-7 - 1N 3841 Trigger-Di =1N3839: Ub=26...34V, th=14...50mA 31a DO-7 4E30..., 4E30M... 1N 3842 Trigger-Di =1N3839: Ub=31...39V, Ih=14...50mA 3ta DO-7 4E40..., 4E40M... 1N 3843 Trigger-Di =1N3839: Ub=36...44V, h=14...50mA 31a D0-7 440..., 4E40M... 1N 9844 Trigget-Di =1N3839: Ub=41...49V, Ih=14...50mA 31a DO-7 4E50..., 4E50M... 1 N 3845 Trigger-Di =1N3839; Ub=46...54V, ih=14...50mA 31a DO-7 4E50..., 4E50M... 1N3846 0 Trigger-Di = 1N3839: Ub=90...110V, In=14...50mA 3ta 00-7 4100..., 4E100M... 1 N 3847 Kine Ge-Di Tunnel-Di : ~ So 1N 3848 Kme Ge-Di Tunnel-Di . 1 N 3849 Kme Ge-Di Tunnel-Di - 1 N 3850 Kmc Ge-Di Tunnel-Di - 1N 3851 Kme Ge-Di Tunnel-Di - 1N 3852 Kmc Ge-Di Tunnel-Di 4.N 3853 Kme Ge-Di Tunnel-Di - 1N 3854 Kme Ge-Di Tunnel-Di 1N 3855 Kme Ge-Di Tunnel-Di - 1N 3856 Kmco Ge-Di Tunnel-Di - 1N 3857 Kme Ge-Di Tunnel-Di - 1N 3858 Kme Ge-Di Tunnel-Di - 1N 3859 Kme Ge-Di Tunnel-Di - 41N 3860 Kime Ge-Di Tunnel-Di - 1N 3861 Kme Ge-Di Tunnel-Di 1N 3862 Kmeo Ge-Di Tunnel-Di - 1na863 | Kmo | GeDiTunnel-Dh ee ee _ - - _ _ 1N 3864, USA S-Di _S, 125, <900ns _. _ sla _ 00-7 BA 173, BAV19...21, BAX 15...17, ++ 1N3865 siide,Sem_ Ge-Di_ Uni, BOV. a . 314 DO-7 _1N270 _ a 1N 3866 USA Si-Di Rr, 200V, 1A, Uf<1,1V(1A) 31a DO-29 BY 126...127, BY 133...134, 1N4009...07, ++ 1N 3867 Si-Di =1N3866: 400V 31a DO-29 BY 126...127, BY 133...134, 1N4004...07, ++ iN3868 SDE __= N38 866: 600V 31a DO-29 _ - BY 126...127, BY 133...134, 1N4005... 1N 3869 USA Si-i Rr, 1000V, 0,54 31a 00-29 BA 159, BY 127, BY 133, 1N4007, ++ 1N 3870 Si-Di =1N3879: 1500V 31a DO-29 BY 269, DM 513, EM 516, GP 10W, ++ 1N 3871 Si-Di =1N3879: 2000V, 0,25A . wa D0-29 - _ _ BAY 91, BY 203/20, SHG 2 1N 3872 _ USA SEDI S, 90V, <15ns _ . 31a s BA 202...203, BAV 16, BAY 43 1N 3873 _ USA SEDI SS, 90V, 0,154, <4ns _ Sta DO-7 BA 219, BAW 47, +N 3874 USA Si-Di =1N3879: Iso Stud 32a DO-10 - 1N 3875 Si-Di =1N3880: Iso Stud 32a DO-10 - 1 N 3876 Si-Di =1N3881: Jso Stud 32a BO-10 - 1N 3877 Si-Di =1N3882: Iso Stud 32a DO-10 1N 3878 Si-Di =1N3883: Iso Stud 32a DO-10 . 1N 3879(A) USA,Mot,Rea_Si-Di P FRr, 50V, 6A(Tc=100), Uf<1,4V (6A). <200ns 32a 00-4 BYX 62/800 Phi,Sie,Tho A: Uf<0,9V(6A) 1 N 3880(A) Si-Di =1N3879: 100V 32a DO-4 BYX 62/800 1N3881(A) Si-Di =1N3879; 200V 32a DO-4 BYX 62/800 4N-3882(A) Si-Di =1N3879: 300V 32a BO-4 BYX 62/800 1 N 3883(A) Si-Di =1N3879: 400V - 32a 00-4 BYX 62/800 1N3879R....3888R SDL = ANB87EL - . 32h 00-4 BYX 62/800R - 1N 3884 USA Si-Di =1N3889: Iso Stud 32a DO-10 - 1N 3885 Si-Di =1N3890: Iso Stud 32a D0-10 : 1N 3886 Si-Di =1N3891: Iso Stud 32a DO-10 : 1N 3887 Si-Di =1N3892: Iso Stud 32a DO-10 1N 3888 Si-Di =1N3893: Iso Stud 32a DO-10 - 1N 3889(A) USA,Mot,Rea Si-Di P FRr, 50V, 12A(Tc=100), Uf<1,4V(12A), <200ns 32a D0-4 BYX 62/800 Phi,Sie, Tho A: Uf<0,95V(12A} 1N 3890(A) Si-Di =1N3889: 100V 32a DO-4 BYX 62/800 1N3891(A) Si-Di =1N3889: 200V 32a DO-4 BYX 62/800 1N3892(A) Si-Di =1N3889: 300V 32a DO-4 BYX 62/800 1N3893(A) Si-Di =1N3889: 400V 32a 00-4 BYX 62/800 1.N 3889R....3893R Si-Di =1N3889: __32b_ DO-4 _. _ BYX 62/800R 1N 3894 Sem,Ssi Si-Di Rr, Uni, 400V, 0,4A, Uf<1V(0,4A) 3ta DO-7 BA 157...159, BY 204/4, BY 207, ++ 41N3895)Sem,Ssi S-Di RF, Uni, 35 0V, 0,48, Ufc 1V(0,2A) _ sia DO-7, - BA 157. ..159, BY 204/4, BY 206...207, ++ 1N 3896 Ide,Sem Z-Di 0,775V(50mA), 5%, -0,2%/C, <2,5Q, 0,25W 31a DO-7 - +N 3897 tde,Sem Z-Di 1,5V(30mA), 5%, -0,22%/C, <5Q, 0,25W 31a DO-7 - iN3898 sd, Sem ZDi 2M 20mA), 5%, -0,23%/C, <100, 0,25W - Bla DO-7 : . _ 7 1N 3899 USA,Phi,Tho Si-Di P FRr, SOV, 20A(Tc=100), Uf<1,4V(20A), <200ns 32a DO-5 BYT 65/600, 1N3909...13 1N3900 Si-Di =1N3899: 100V 32a DO-5 BYT 65/600, 1N3910...13 1N3901 Si-Di =1N3899: 200V 32a DO-5 BYT 65/600, 1N3911...13 4N 3902 Si-Di =1N3899; 300V 32a DO-5 BYT 65/600, 1N3912...13 1N 3903 Si-Di =1N3899: 400V 32a DO-5 BYT 65/600, 1N3913 1N3899R. ...3903R Si-Di =1N3899: 400V 32b DO-5- BYT 65/600R, 1N3909R...13R 1N 3904 Sem,Ssi Si-Di =1N3899: iso Stud 32a DO-11 1N3914,..18 1N 3905 Si-Di =1N3900: Iso Stud 32a DO-11 1N3915...18 1N 3906 Si-Di =1N3901: Iso Stud 32a DO-11 1N3916...18 1N3907 Si-Di =1N3902: Iso Stud 32a DO-11 1N3917...18 1. N 3908 _ Sei =1N3903: Iso Stud 32a DO-14 1N3918 - 7 1N 3909 USA,Phi,Tho Si-Di P FRr, 50V, 30A(Tc=100), Uf<1,4V(30A), <200ns 32a DO-5 MR 860...866 1N3910 Si-Di =1N3909: 100V 32a 00-5 MR 861...866 1N 3911 Si-Di =1N3909: 200V 32a DO-5 MR 862...866 1N 3912 Si-Di =1N3909: 300V 32a DO-5 MR 864...866 1N 3913 Si-Di =1N3909: 400V 32a DO-5 MR 864...866 1 N 3909R....3913R Si-Di =1N3909.,.3913: 32b DO-5 MR 864R...866R 1N 3914 Si-Di =1N3909: Iso Stud 32a DO-11 . 1N 3915 Si-Di =1N3910: Iso Stud 32a DO-11 - 1N 3916 Si-Di =1N3911: Iso Stud 32a 0O-11 - 1N 3917 Si-Di =1N3912: Iso Stud 32a DO-11 - 1N 3918. _SiDI _21N3913: Iso Stud . _ 2a DO-1t _. Se 1N3919 USA Si-Di P Rr, 1000V, 5A(Tc=100), Uf<2V(5A) 32a DO-4 BYX 38/1200, BYX 39/1200