ILD32/ ILQ32
Document Number 83650
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
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Pb
Pb-free
e3
Optocoupler, Photodarlington Output, High Gain (Dual, Quad
Channel)
Features
Isolation Test Voltage, 5300 VRMS
High Isolation Resistance, 1011 Typical
Low Coupling Capacitance
Standard Plastic DIP Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The ILD32/ ILQ32 are optically coupled isolators with
a gallium arsenide infrared LED and a silicon photo-
darlington sensor. Switching can be achieved while
maintaining a high degree of isolation between driving
and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high
speed switching and elimination of magnetic fields.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part Remarks
ILD32 CTR > 500 %, DIP-8
ILQ32 CTR > 500 %, DIP-16
ILD32-X006 CTR > 500 %, DIP-8 400 mil (option 6)
ILD32-X007 CTR > 500 %, SMD-8 (option 7)
ILD32-X009 CTR > 500 %, SMD-8 (option 9)
ILQ32-X007 CTR > 500 %, SMD-8 (option 7)
ILQ32-X009 CTR > 500 %, SMD-8 (option 9)
Parameter Test condition Symbol Value Unit
Peak reverse voltage VR3.0 V
Forward continuous current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 25°C 1.33 mW/°C
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2
Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
Output
Coupler
1) between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown
voltage
BVCEO 30 V
Collector (load) current IC125 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25°C 2.0 mW/°C
Parameter Test condition Part Symbol Value Unit
Isolation test voltage 1) t = 1.0 sec. VISO 5300 VRMS
Creepage 7mm
Clearance 7mm
Comparative tracking index per
DIN IEC 112/VDE303, part 1
175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Total dissipation ILD32 Ptot 400 mW
ILQ32 Ptot 500 mW
Derate linearly from 25 °C ILD32 5.33 mW/°C
ILQ32 6.67 mW/°C
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time at 260 °C 10 sec.
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 10 mA VF1.25 1.5 V
Reverse current VR = 3.0 V IR0.1 100 pF
Capacitance VR = 0 V CO25 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter breakdown
voltage
IC = 100 µA, IF = 0 BVCEO 30 V
Breakdown voltage emitter-
collector
IE = 100 µABC
ECO 5.0 10 nA
Collector-emitter leakage
current
VCE = 10 V, IF = 0 ICEO 1.0 100 nA
ILD32/ ILQ32
Document Number 83650
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Coupler
Current Transfer Ratio
Switching Characteristics
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter IC = 2.0 mA, IF = 8.0 mA VCEsat 1.0 V
Capacitance (input-output) CIO 0.5 pF
Parameter Test condition Symbol Min Ty p . Max Unit
Current Transfer Ratio IF = 10 mA, VCE = 10 V CTR 500 %
Parameter Test condition Symbol Min Ty p . Max Unit
Turn-on time VCC = 10 V, IF = 5.0 mA,
RL = 100
ton 15 µs
Turn-off time VCC = 10 V, IF = 5.0 mA,
RL = 100
toff 30 µs
Figure 1. Forward Voltage vs. Forward Current
iild32_01
IF - Forward Current - mA
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1. 3
1.4
VF - Forward Voltage - V
Ta = –55°C
Ta = 25°C
Ta = 85°C
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
iild32_02
.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Vce =1V
Vce = 10 V
IF - LED Current - mA
NCTRce - Normalized CTR
Vce = 10 V
IF=10mA
Ta = 25°C
Normalized to:
www.vishay.com
4
Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
Figure 3. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current
Figure 4. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
Figure 5. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
iild32_03
100
1.1
.001
.01
.1
1
10
Vce=1V
Vce=10V
IF - LED Current - mA
NIce - Normalized Ice
Ta = 25°C
IF = 10 mA
Vce=10V
Normalized to:
10
iild32_04
0 5 10 15 20
0
20
40
60
80 TA= 25°C, VCC =10V
Vth = 1.5 V
220 ıˇ
470
IF- LED Current - mA
100
1k
tpLH -Low/High Propagation
Delay - µs
iild32_05
0 5 10 15 20
0
5
10
15
20
100
1k
IF- LED Current - mA
TA=25°C
VCC =10V
Vth = 1.5 V
tpHL -High/Low Propagation
Delay - µs
Figure 6. Switching Timing
Figure 7. Switching Schematic
iild32_06
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
iild32_07
VO
RL
VCC=10 V
IF=5 mA
F=10 KHz,
DF=50%
ILD32/ ILQ32
Document Number 83650
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in Inches (mm)
Package Dimensions in Inches (mm)
i178006
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
typ.
.100 (2.54) typ.
10°
–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
ISO Method A
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
87654321
910111213141516
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
i178007
ISO Method A
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6
Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15° max.
Option 9
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36)
.391 (9.96)
Option 6
.315 (8.0)
MIN.
.300 (7.62)
TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.028 (0.7)
MIN.
Option 7
18450
ILD32/ ILQ32
Document Number 83650
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423