DS30286 Rev. B-2 1 of 3 MBRD1035CTL
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MBRD1035CTL
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
·Case: DPAK Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Polarity: See Diagram
·Marking: See Sheet 2
·Weight: 0.4 grams (approx.)
·Ordering Information: See Below
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
P
123
4
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT
S
INK
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 V
RMS Reverse Voltage VR(RMS) 25 V
Average Rectified Output Current Per Leg
(See Figure 4) Per Package IO5
10 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package (JEDEC Method)
IFSM 75 A
Typical Thermal Resistance Junction to Case Bottom Side Per Leg
(Note 1) RqJC 2.43 °C/W
Voltage Rate of Change @ VR = 35V, Tj = 25°C dv/dt 10,000 V/ms
Operating Temperature Range Tj-55 to +125 °C
Storage Temperature Range TSTG -55 to +125 °C
·Guard Ring Die Construction for
Transient Protection
·Low Power Loss, High Efficiency
·High Surge Capability
·Very Low Forward Voltage Drop
·For Use in Low Voltage, High Frequency
Inverters, OR’ing, and Polarity Protection
Applications
·Plastic Material: UL Flammability
Classification Rating 94V-0
TCUDORPWEN
Maximum Ratings @ TA = 25°C unless otherwise specified
DPAK
Dim Min Max
A6.3 6.7
B¾10
C0.3 0.8
D2.3 Nominal
E2.1 2.5
G0.4 0.6
H1.2 1.6
J5.3 5.7
K0.5 Nominal
L1.3 1.8
M1.0 ¾
P5.1 5.5
All Dimensions in mm
Notes: 1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
Ordering Information (Note 2)
Device Packaging Shipping
MBRD1035CTL-T DPAK 2500/Tape & Reel
Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
SPICE MODEL: MBRD1035CTL
MBRD1035CTL = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YWW
MBRD
1035CTL
DS30286 Rev. B-2 2 of 3 MBRD1035CTL
www.diodes.com
Notes: 1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
3. Short duration pulse test used to minimize self-heating effect.
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 3) V(BR)R 35 ¾¾VIR = 500mA
Forward Voltage (Note 3) VFM
¾
¾
¾
¾
¾
¾
¾
¾
0.47
0.41
0.56
0.55
V
IF = 5A, TS = 25°C
IF = 5A, TS = 100°C
IF = 10A, TS = 25°C
IF = 10A, TS = 100°C
Peak Reverse Current (Note 3) IRM
¾
¾
¾
¾
0.04
¾
¾
¾
2.0
30
200
5
mA
mA
mA
mA
VR = 35V, Tj= 25°C
VR = 35V, Tj= 100°C
VR = 17.5V, Tj= 25°C
VR = 17.5V, Tj= 100°C
Typical Junction Capacitance Cj¾340 ¾pF f = 1.0MHz, VR = 4.0V DC
Electrical Characteristics @ TA = 25°C unless otherwise specified
TCUDORPWEN
1
0.1
0.01
0.001
10
100
010
20 30 35
I , INSTANTANE
O
US REVERSE CURRENT (mA)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics (Per Element)
515 25
T = +25°C
j
T = +125°C
j
T = +100°C
j
0100 200 300 400 600
500
I , INSTANTANE
O
US F
O
RWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Fig. 1 Typical Forward Characteristics (Per Element)
10
1
0.1
0.01
0.001
0.0001
100
T = +25°C
j
T = 125°C
j
T=100°C
j
Marking Information
DS30286 Rev. B-2 3 of 3 MBRD1035CTL
www.diodes.com
TCUDORPWEN
0
0.5
1.0
1.5
2.5
2.0
3.0
3.5
4.0
013
245678910
P , AVERAGE FORWARD POWER DISSIPATION (W)
F(AV)
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fi
g
. 5 Forward Power Dissipation
(
Per Element
)
T = 125°C
j2
3
10
100
1000
015
10 25 30 35
20 40
C , JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
R
Fig. 3 Typical Junction Capacitance vs.
Reverse Volta
g
e
(
Per Element
)
5
f = 1MHz
0
1
2
4
3
5
6
7
-25 025 50 75 100 125 150
I , AVERAGE F
O
RWARD CURRENT (A)
F(AV)
T , AMBIENT TEMPERATURE (°C)
A
Fig. 4 DC Forward Current Derating (Per Element)
Note 1
Note 2
Note 3
Notes: 1. TA = TSOLDERING POINT, RqJC = 2.43°C/W, RqCA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
