TH97/10561QM 1N4531 ~ 1N4532 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : * High switching speed: max. 4 ns 1.00 (25.4) min. 0.078 (2.0 )max. * Continuous reverse voltage:max. 75 V * Repetitive peak reverse voltage:max. 75 V * Repetitive peak forward current:max. 450 mA. * Pb / RoHS Free 0.118 (3.0) max. Cathode Mark 1.00 (25.4) min. 0.017 (0.43)max. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Maximum Repetitive Peak Reverse Voltage VRRM 75 V Maximum Continuous Reverse Voltage VRM 75 V Maximum Continuous Forward Current IF 200 mA IFRM 450 mA PD 500 mW IFSM 0.5 A Maximum Junction Temperature TJ 200 C Storage Temperature Range TS -65 to + 200 C Maximum Repetitive Peak Forward Current Maximum Power Dissipation (1) Maximum Surge Forward Current at t < 1s, Tj = 25 C Electrical Characteristics (Tj = 25C unless otherwise noted) Parameter Symbol VF VR = 20 V VR = 20 V , Tj = 150 C VR = 50 V VR = 50 V , Tj = 150 C IF = 10 mA Cd f = 1MHz ; VR = 0 Trr IF = 10 mA to I R = 60mA RL = 100 ; Measured at I R = 1 mA 1N4531 IR Reverse Current 1N4532 Forward Voltage Diode Capacitance Reverse Recovery Time Page 1 of 2 1N4531 1N4532 1N4531 1N4532 Test Condition Min Typ Max Unit - - 25 5 100 100 1 4.0 2.0 nA - - 4 2 ns ns A nA A V pF Rev. 03 : December 3, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE. FIG. 2 TYPICAL FORWARD VOLTAGE 1000 Forward Current , IF (mA) CONTINUOUS FORWARD CURRENT, IF (mA) 200 100 100 10 TJ = 25C 1 0.1 0 0.01 0 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage , VF (V) Ambient Temperature , Ta (C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERESE CURRENT VS JUNCTION TEMPERATURE 103 1.2 Reverse Current , IR (nA) Diode Capacitance , Cd (pF) 1.0 0.9 0.8 0.7 f = 1MHz; TJ = 25C 0.6 VR = 50V 102 10 1 0.5 0.1 0.4 0 10 Reverse Voltage , VR (V) Page 2 of 2 20 0 100 200 Junction Temperature , Ta (C) Rev. 03 : December 3, 2008