A E A 61398 BA. TO 92 (CB 97) (CB 16) (CB 76) (CB 6) Silicon PNP transistors, video high voltage Tamb = 25 C Transistors PNP silicium, haute tension vido Vceo vy) VCEsat iT Case Prot Vcer* hie Io (v) to/ip (MHz} TSi 76 Type Boitier {w) min max | (mA} max (mA) min Page 2N 5400 TO 920 350 120 40 180 -10 9,5 50/5 # 2N 5401 TO 920 350 150 60 240 10 0,5 50/5 # aan 80 240 TW SS BF 416 TO 126 6 250 30 25 0,5 -5/1 597 *#BF 418 TO 126 6! 300 30 25 0,5 -5/1 597 BF 423 F 139 Bo 06 250 50 = 25 ee _ _ 605 *BF 470 TO 126 18 250 50 25 60 619 BF 472 TO 126 18 300 50 25 60 # ESM 623 F 139 Bo 830 300 50 5 60 # ESM 692 TO 920 625 300 25 30 = 0,5 20/2 50 _ 761 ESM 693 TO 920 625 -- 200 30 _ = 30 0,4 20/2 500 761 Silicon NPN transistors, fast switching . Het . . Tamb = 25 C Transistors NPN silicium, commutation rapide ts VcEO (ns) Case Prot {v) hae Ico toff TSi 76 Type Boitier {mW) VceR*| min max (mA) max Page 2N 708 TO18 300 20" 20 3 06 101 200 6 75 2N 706 A TO 18 306 15 20 60 10 0.6 __ 10/1 __ 200 ; 7 81 2N 708 TO 18 360 16 30 120 10 0.4 10/1 __ 300 25 87 a 2N 743 TO 18 300 12 20 60 10 0,3 100/10 280 24 103 2N 744 TO18 300 42 40 120 10 0,28g = 100/10 = 280, 24* 108 2N 753 TO 18 300 16 40 120 10 0.6 10/1 - #2N 914 TO 18 360 15 30 120 10 0,7 200/20 300 _ 2N 2368 TO 18 360 15 20 60 10 0,25 10/1 #2N 2369 TO 18 360 15 40 120 10 0,25 10/1 2N 2369 A TO 18 360 15 40 120 10 0,5 100/10 Silicon PNP transistors, fast switching T oc Transistors PNP silicium, commutation rapide amb = 28 ts ~~ VcEO fT {ns} Case Prot (v) ha1e (MHz) | toff*| TSI 76 Type Boitier (raw) VcerR*| min max min max Page 2N 2894 TO 18 360 12 40 150 36 0,2 30/3 400 90* 225 * Preferred device Dispositif r d Typical value Valeur Plastic case Boitier 1 Tease = 25 C # To be published later 3 = oO Tease = 114 C Sera publia ultrieurement