Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 6 1Publication Order Number:
BC817−16LT/D
BC817−16LT1,
BC817−25LT1, BC817−40LT1
General Purpose
Transistors
NPN Silicon
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 45 V
Collector−Base Voltage VCBO 50 V
Emitter−Base Voltage VEBO 5.0 V
Collector Current − Continuous IC500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, (Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxD
12
3
xx = Specific Device Code
D = Date Code
BC817−16LT1, BC817−25LT1, BC817−40LT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA) V(BR)CEO 45 − − V
Collector−Emitter Breakdown Voltage
(VEB = 0, IC = −10 A) V(BR)CES 50 − − V
Emitter−Base Breakdown Voltage
(IE = −1.0 A) V(BR)EBO 5.0 − − V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO −
−−
−100
5.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC817−16
BC817−25
BC817−40
(IC = 500 mA, VCE = 1.0 V)
hFE 100
160
250
40
−
−
−
−
250
400
600
−
−
Collector−Emitter Saturation V oltage
(IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V
Base−Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz) Cobo − 10 − pF
ORDERING INFORMATION
Device Specific Marking Code Package Shipping†
BC817−16LT1 6A SOT−23
BC817−16LT1G 6A SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC817−16LT3 6A SOT−23 10,000 / Tape & Reel
BC817−25LT1 6B SOT−23
BC817−25LT1G 6B SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC817−25LT3 6B SOT−23
BC817−25LT3G 6B SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC817−40LT1 6C SOT−23
BC817−40LT1G 6C SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC817−40LT3 6C SOT−23
BC817−40LT3G 6C SOT−23
(Pb−Free) 10,000 / Tape & Reel
SBC817−40LT1 6C SOT−23 3,000 / Tape & Reel
SBC817−40LT3 6C SOT−23 10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
BC817−16LT1, BC817−25LT1, BC817−40LT1
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
10000.1 10 100
100
1.0
VCE = 1 V
TJ = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitances
0.1 11 10 100 1000
−2
−1
0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
0
1 10 1000100
10 100
TJ = 25°C
IC = 10 mA
TA = 25°CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC817−16LT1, BC817−25LT1, BC817−40LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
1
3
2
AL
BS
VG
DH
C
KJ
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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BC817−16LT1/D
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