FM200TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 100 Amperes/100 Volts A D F G G Q H K L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED POINT 6 12 Z V AA Z W AA Z Y Q K M M V U X C C TERMINAL CODE U V 1 SUP 2 SVP 3 SWP P 4 SUN 5 SVN A (7) GUP (8) GVP (9) GWP (1) SUP (2) SVP (3) SWP U V 6 SWN 7 GUP 8 GVP (13) 9 GWP 10 GUN W 11 GVN 12 GWN (14) B (10) GUN (11) GVN (12) GWN (4) SUN (5) SVN (6) SWN N 13 TH1 14 TH2 Housing Type Tyco Electronics P/N A: 917354-1 B: 177898-1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q 7/12 Rev. 1 Inches 4.33 3.54 1.38 3.82 3.15 3.27 0.26 0.48 0.51 0.65 0.63 1.26 0.35 0.45 0.16 Millimeters 110.0 90.0 35.0 97.0 80.0 83.0 6.5 12.0 12.9 16.5 16.0 32.0 8.8 11.5 4.0 Dimensions R S T U V W X Y Z AA AB AC AD AE AF Inches 0.79 1.50 2.64 1.02 0.98 0.36 Dia. 0.25 Rad. 0.25 0.57 0.55 1.18 0.69 0.47 0.61 0.18 Millimeters 20.0 38.0 67.0 26.0 25.0 9.1 Dia. 6.5 Rad. 6.5 14.5 14.0 30.0 17.5 12.0 15.5 4.5 Description: Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield low loss. All components and interconnects are isolated from the heat sink baseplate. This offers simplified system assembly and thermal management. Features: Low ESW(off) and Low Rds(on) Super-Fast Recovery FreeWheel Diode Thermistor for TC Sensing Parallel Legs to make a Dual Module at 3X the Rating Positive Locking Connectors Easy Bus Bar Layout Due to Flow Through Power Design Applications: Forklift Off road Electric Vehicle Welder UPS Chopper Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. FM200TU-2A is a 100V (VDSS), 100 Ampere 6-Pack High Power MOSFET Module. Type Current Rating Amperes VDSS Volts FM 100 100 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM200TU-2A 6-Pack High Power MOSFET Module 100 Amperes/100 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Symbol FM200TU-2A Units Channel Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Drain-Source Voltage (G-S Short) VDSS 100 Volts Gate-Source Voltage (D-E Short) VGSS 20 Volts Drain Current (TC = 25C) ID(rms) 100 Arms Peak Drain Current (Pulse) IDM 200* Amperes Avalanche Current (L = 10H, Pulse) IDA 100* Amperes Source Current (TC = 25C)** IS(rms) 100 Arms Peak Source Current (Pulse)** ISM 200* Amperes Maximum Power Dissipation (TC = 25C, Tj < 150C)*** PD 410 Watts Maximum Peak Power Dissipation (TC' = 25C, Tj < 150C)*** PD 560 Watts Mounting Torque, M6 Main Terminal -- 40 in-lb Mounting Torque, M6 Mounting -- 40 in-lb Weight -- 600 Grams VISO 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Drain-Cutoff Current Gate-Source Threshold Voltage Gate Leakage Current Static Drain-Source On-State Resistance Symbol Test Conditions Min. Typ. Max. Units IDSS VDS = VDSS, VGS = 0V -- -- 1.0 mA VGS(th) ID = 10mA, VDS = 10V 4.7 6.0 7.3 Volts IGSS VGS = VGSS, VDS = 0V -- -- 1.5 A rDS(on) (Chip) Static Drain-Source On-State Voltage VDS(on) (Chip) Lead Resistance Rlead Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Inductive Turn-on Delay Time Load Rise Time Switch Turn-off Delay Time Time Fall Time ID = 100A, VGS = 15V, Tj = 25C -- 2.4 3.3 m ID = 100A, VGS = 15V, Tj = 125C -- 4.1 -- m ID = 100A, VGS = 15V, Tj = 25C -- 0.24 0.33 Volts ID = 100A, VGS = 15V, Tj = 125C -- 0.41 -- Volts ID = 100A, Terminal-Chip, Tj = 25C -- 1.2 -- m ID = 100A, Terminal-Chip, Tj = 125C -- 1.68 -- m -- -- 50 nF VDS = 10V, VGS = 0V -- -- 7 nF -- -- 4 nF VDD = 48V, ID = 100A, VGS = 15V -- 760 -- nC -- -- 400 ns VDD = 48V, ID = 100A, -- -- 300 ns td(off) VGS1 = VGS2 = 15V, RG = 13, -- -- 450 ns tf Inductive Load Switching Operation, -- -- 300 ns Diode Reverse Recovery Time** trr IS = 100A Diode Reverse Recovery Charge** Qrr Source-Drain Voltage td(on) tr VSD IS = 100A, VGS = 0V -- -- 250 ns -- 3.6 -- C -- -- 1.3 Volts * Pulse width and repetition rate should be such that device channel temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). ***TC' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. 2 7/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM200TU-2A 6-Pack High Power MOSFET Module 100 Amperes/100 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Channel to Case Rth(j-c) MOSFET part (1/6 Module) -- -- 0.30 C/W Thermal Resistance, Channel to Case Rth(j-c') MOSFET part (1/6 Module) -- -- 0.22 C/W Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied -- 0.1 -- C/W TC Reference Point per Outline Drawing Measured Point is Just Under the Chips. Thermistors Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Resistance* Rth TC = 25C -- 100 -- k B Constant* B Resistance at 25C, 50C -- 4000 -- K *B = (InR1 - InR2) / (1/T1 - 1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) 200 VGS = 20V 10 9 100 50 150 100 50 VDS = 10V Tj = 25C Tj = 125oC Tj = 25C SOURCE CURRENT, IS, (AMPERES) 103 0.2 0.4 0.6 0.8 0 1.0 5 7 9 13 1.0 ID = 200A 0.5 ID = 100A 0 15 0 5 10 15 20 GATE-SOURCE, VGS, (VOLTS) GATE-SOURCE VOLTAGE, VGS, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL - INVERTER PART) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 102 103 Ciss 101 Coss Crss VGS = 0V 0.6 0.7 0.8 0.9 SOURCE-DRAIN VOLTAGE, VSD, VOLTS) 7/12 Rev. 1 11 1.5 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) VGS = 0V Tj = 25C Tj = 125oC 101 0.5 Tj = 25C ID = 50A 1.0 REVERSE RECOVERY CURRENT, trr, Irr, (ns) 0 CAPACITANCE, Cies, Coes, Crss, (nF) 0 DRAIN-SOURCE ON-STATE VOLTAGE, VDS(ON), (VOLTS) 12 150 2.0 15 DRAIN CURRENT, ID, (AMPERES) DRAIN CURRENT, ID, (AMPERES) 200 DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS CHARACTERISTICS (TYPICAL ) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 10-1 100 101 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) 102 102 trr Irr VDD = 48V VGS = 15V RG = 13 Tj = 25C INDUCTIVE LOAD 101 100 101 102 103 SOURCE CURRENT, IS, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM200TU-2A 6-Pack High Power MOSFET Module 100 Amperes/100 Volts VDD = 48V VGS = 15V RG = 13 Tj = 125C INDUCTIVE LOAD E SW(off) ESW(on) 100 Err 10-1 10-2 101 102 103 102 VDD = 48V VGS = 15V ID = 100A Tj = 125C INDUCTIVE LOAD 101 10-1 0 20 tf 40 60 80 101 100 120 140 0 20 40 60 80 100 120 140 GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL ) VDD = 48V VGS = 15V RG = 13 Tj = 125C INDUCTIVE LOAD 102 GATE-SOURCE VOLTAGE, VGS, (VOLTS) tf ID = 100A 15 VDD = 24V VDD = 48V 10 5 0 103 0 300 ID = 100A VGS = 12V VGS = 15V 4 3 2 1 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE, Tj, (C) 600 900 1200 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) DRAIN-SOURCE ON-STATE RESISTANCE VS. TEMPERATURE (TYPICAL ) GATE-THRESHOLD VOLTAGE, VGS(th), (VOLTS) GATE CHARGE CHARACTERISTICS (TYPICAL ) DRAIN CURRENT, ID, (AMPERES) DRAIN-SOURCE ON-STATE RESISTANCE, rDS(ON), (m) VDD = 48V VGS = 15V ID = 100A Tj = 125C INDUCTIVE LOAD SWITCHING TIME VS. DRAIN CURRENT (TYPICAL ) 101 101 4 102 GATE RESISTANCE, RG, () 102 0 tr GATE RESISTANCE, RG, () td(on) tr 0 103 Err 10-2 td(off) DRAIN CURRENT, ID, (AMPERES) td(off) 5 ESW(on) ESW(off) 20 6 td(on) 100 103 SWITCHING TIMES, (ns) 104 SWITCHING TIME, (ns) 101 SWITCHING TIME VS. GATE RESISTANCE (TYPICAL ) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) SWITCHING LOSS VS. DRAIN CURRENT (TYPICAL) 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-2 10-1 100 6 5 4 3 2 1 0 VGS = 10V ID = 10mA 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE, Tj, (C) 101 10-1 10-1 10-2 10-2 10-3 7 Single Pulse TC = 25C 10-5 TIME, (s) 10-4 10-3 10-3 7/12 Rev. 1