SIEMENS Silicon Crossover Ring Quad Schottky Diode @ Low barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! BAT 15-099R 1 vpsos178 Type Marking | Ordering Code =| Pin Configuration Package) (tape and reel) BAT 15-099R | S6 Q62702-A0043 4 3 SOT-143 1 2 EHAO7012 Maximum Ratings per Diode Parameter Symbol Values Unit Forward current Ir 110 mA Power dissipation, 7s < 70 C Prot 100 mw Storage temperature range Tag ~55...+ 150 | C Operating temperature range Top - 55... + 150 Thermal Resistance per Diode Junction ambient?) Rin sa < 1020 K/AW Junction soldering point Rinus s 780 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm to 0.7 mm. Semiconductor Group 274 02.96SIEMENS BAT 15-099R Electrical Characteristics per Diode at Ts = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Forward voltage Ve Vv IF= 1mA - 0.23 - ie=10mA - 0.32 - Forward voltage matching!) AVF ~ - 20 mV fe=10mMA Diode capacitance Cr - 0.38 - pF Va=0, f= 1 MHz Forward resistance Rr - 5.5 - Q Ie=10mA/50 mA Forward current Ir = f (VrF} Forward current ir = f (7's; Ta*) Package mounted on alumina 102 BAT 45-099R EHD07077 140 BaT 15-0998 HD07078 be i, mA mA 1 Q! _ 100 N WN 80 Ws 10 +N 60 \ 40 by 107% 20 | 1009 0.5 Vv 1.0 % 50 100 C 150 - , e Thi ls 1) ar is the difference between the lowest and the highest Vr in the component. Semiconductor Group 275