MIXA60WH1200TEH
preliminary
6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
XPT IGBT Module
NTC
10
11
25 26
123
27 28
8
7
17
16
13
12
18
19
14
6
20
21
15
54
9
24 23 22
Part number
MIXA60WH1200TEH
Backside: isolated
Features / Ad vantages: Applications: Package:
● Housing:
●
_
International standard package
●
_
RoHS compliant
●
_
Isolation voltage: 3600 V~
●
_
Advanced power cycling
● Thyristor/Standard Rectifier for line frequency
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
E3-Pack
RRM
1600
3~
Rectifier
I135
TSM
700
DAV
V=V
A
A
=
=
I
CES
1200
Brake
Chopper
I60
CE(sat)
1.8
C25
V=V
A
V
=
=
V
CES
1200
3~
Inverter
I85
CE(sat)
1.8
C25
V=V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R/D
V
IA
V
T
1.43
R0.65 K/W
R/D
min.
135
V
RSM/DSM
V
100T = 25°C
VJ
T = °C
VJ
mA20V = V
R/D
T = 25°C
VJ
I = A
T
V
T = °C
C
80
P
tot
190 WT = 25°C
C
80
1600
max. non-repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.86
T = 25°C
VJ
150
V
T0
V0.85T = °C
VJ
150
r
T
7.1 mΩ
V1.42T = °C
VJ
I = A
T
V
80
1.97
I = A
T
160
I = A
T
160
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM/DRM
V1600
max. re pe titive revers e/forward blockin g volt a ge T = 25°C
VJ
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
32
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
300 µs
DAV
d =180° sine ⅓
bridge output current
(di/dt)
cr
A/µs
100
repetitive, I =
T
VJ
= 125°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=125°C
critical rate of rise of voltage
A/µs500
V/µs
t = 200 µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
=0.45
di /dt A/µs
G
=0.45
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
78 mA
T= °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 5mA
V = ⅔ V
D DRM
125
latching current T= °C
VJ
450 mAI
L
25tµs
p
=200
IA;
G
= 10 di /dt A/µs
G
=0.45
holding current T= °C
VJ
100 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay time T= °C
VJ
2µst
gd
25
IA;
G
= 0.45 di /dt A/µs
G
=0.45
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs;15
V =
R
100 V; I A;
T
=20 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 45 A
T
150
R
thCH
thermal resistance case to heatsink K/W
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
60
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
40
V
V
CE(sat)
total power dissipation 195 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient collector gate voltage
T = 80°C
C
V
P
tot
gate emitter threshold voltage
RBSOA
105
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C80
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.1 mA
2.1
nA
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
106 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
3.8 mJ
4.1 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
140 A
R
thJC
thermal resistance junction to case K/W
V
RRM
V1200
max. repe titive rev erse volt a g e T = 25°C
VJ
T = 25°C
forward current A
44
A
C
29T = 80°C
C
I
F25
I
F80
T = 25°C
forward voltage V
2.20
V
VJ
1.95T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.1
mA
VJ
0.15T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
3.5 µC
30 A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
E
rec
0.9 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 1.2 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
35
1.5
35
35
30
30
27
27
27
600
900
600
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink
0.64
K/W
R
thCH
thermal resistance case to heatsink K/W
Brake IGBT
Brake Diode
600 V
0.10
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
-di /dt = A/µs
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collect or current A
85
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
60
V
V
CE(sat)
total power dissipation 290 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transi ent collec tor gate voltage
T = 80°C
C
V
P
tot
gate emitter threshold voltage
RBSOA
150
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C80
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.2 mA
0.5
nA
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
165 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
4.5 mJ
5.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
200 A
R
thJC
thermal resistance junction to case 0.43 K/W
V
RRM
V1200
max. repetitive rev ers e voltage T = 25°C
VJ
T = 25°C
forward current A
88
A
C
59T = 80°C
C
I
F25
I
F80
T = 25°C
forward voltage V
2.20
V
VJ
1.95T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.3
mA
VJ
1.2T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
8µC
60 A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
2.5 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 0.6 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
55
2
55
55
60
60
15
15
15
600
900
1200
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink K/W
R
thCH
thermal resistance case to heatsink K/W
Inverter IGBT
Inverter Diode
600 V
V = V
CEmax
1200
0.10
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
Ratings
XXX XX-XXXXX
YYWWx
2D Data Matrix
Logo UL Part number Date Code Location
I
X
M
A
60
WH
1200
T
EH
Part number
IGBT
XPT IGBT
Gen 1 / std
6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit
Thermistor \ Temperature sensor
E3-Pack
Module
=
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm6
mounting torque 3
T
stg
°C125
storage temperature -40
Weight g270
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 300 A
per terminal
150-40
terminal to terminal
E3-Pack
Similar Part Package Voltage class
MIXA60WB1200TEH E3-Pack 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
0 25 50 75 100 125 150
102
103
104
105
R
[]
Typ. NTC resistance vs. temperature
TC[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MIXA60WH1200TEH 509622Box 5MIXA60WH1200TEHStandard
threshold voltage V0.85
mΩ
V
0 max
R
0 max
slope resistance * 3.9
1.1
25.1
1.22
13
1.1
40
1.2
27
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier Brake
IGBT
Brake
Diode
Inverter
IGBT
Inverter
Diode
150°C
* on die level
T = 25°
resistance kΩ
5.25
K
VJ
3375
R
25
B
25/50
5
4.75
temperature coefficient
Symbol Definition typ. max.min.Conditions Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
1 2 3 4 5 6
25 24 23 22 21 20 19 18 17 16 15 14 13 12
26
27
28
11
10
9
8
7
NTC
10
11
25 26
123
27 28
8
7
17
16
13
12
18
19
14
6
20
21
15
54
9
24 23 22
Outlines E3-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
0 25 50 75 100 125 150
011
100
1000
10000
0.001 0.01 0.1 1
0
100
200
300
400
500
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
[ms]
[A]
[s]
[s]
0.0 0.4 0.8 1.2 1.6 2.0
0
30
60
90
120
150
[A]
[V]
0306090120
0
50
100
150
200
250
[W]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
=45°C
80 % V
RRM
50 Hz
5
3
2
1.5
1
0.5
0.2
V
R
=0V
T
VJ
=150°C
[A
2
s]
[°C][A]
[K/W]
Fig.1 F orward current versus
voltage drop per diode
Fig.2 Surge overload current Fig.3 I
2
t versus time per diode
T
VJ
=45°C
T
VJ
=150°C
Fig.7 Power dissipation versus direct output current
and ambient tem
p
erature, sine 180°
Fig. 8 Transient thermal impedance junction to case
R
thKA
K/W =
0 40 80 120 160
0
30
60
90
120
150
[A]
[°C]
Fig. 6 Max. forward current
versus case temperature
1 10 100 1000 10000
0.1
1
10
[mA]
[V]
1: IGT,T
VJ =125°C
2: IGT,T
VJ =25°C
3: IGT,T
VJ = -40°C
4: PGAV =0.5W
5: PGM =5W
6: PGM =10W
Fig. 4 Gate trigger characteristics
[µs]
[mA]
typ. Limit
Fig. 5 Gate trigger delay time
T
VJ
=25°C
Riti
[K/W] [s]
1 0.030 0.0005
2 0.083 0.008
3 0.361 0.094
4 0.176 0.45
IGD,T
VJ =125°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
0 20406080
0
2
4
6
8
10
0.001 0.01 0.1 1 10
0.01
0.1
1
0 20 40 60 80 100 120 140
0
5
10
15
20
20 40 60 80
3
4
5
6
5791113681012
0
10
20
30
40
50
60
70
012345
0
10
20
30
40
50
60
70
0123
0
10
20
30
40
50
60
70
Q
G
[nC]
t[s]
E
[mJ]
I
C
[A]
I
C
[A]
I
C
[A]
V
CE
[V] V
CE
[V]
E
[mJ]
Z
thJC
[K/W]
Eoff
Eon
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics
Fig. 4 Dynamic parameters Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
V
CE
[V]
I
C
[A] R
G
[Ohm]
9V
11 V
13 V
Eon
Eoff
V
GE
[V]
V
GE
=15V
17 V
19 V
T
VJ
= 125°C
25°C
T
VJ
= 125°C
T
VJ
=125°C
T
VJ
=25°C
I
C
= 35A
V
CE
= 600 V
R
G
=27Ohm
V
CE
= 600 V
V
GE
=±15V
T
VJ
= 125°C
I
C
=35A
V
CE
= 600 V
V
GE
=±15V
T
VJ
= 125°C
Riti
[K/W] [s]
1 0.152 0.0025
2 0.072 0.03
3 0.308 0.03
4 0.108 0.08
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
400 600 800 1000
100
200
300
400
500
600
700
0.001 0.01 0.1 1 10
0.01
0.1
1
0 50 100 150 200
0
5
10
15
20
400 600 800 1000
0.0
0.4
0.8
1.2
1.6
2.0
400 600 800 1000
10
20
30
40
50
60
70
400 600 800 1000
1
2
3
4
5
6
7
0123
0
20
40
60
T
VJ
[°C]
t[s]
E
rec
[mJ]
I
RR
[A]
Q
rr
[μC]
I
C
[A]
V
CE
[V] -di
F
/dt [A/μs]
t
rr
[ns]
Z
thJC
[K/W]
Fig. 1 Typ. Forward current
versus V
F
Fig. 2 Typ. reverse recovery
charge Q
rr
versus di/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. recovery energy
E
rec
versus -di/dt
Fig. 7 Transient thermal impedance junction to case
15 A
30 A
60 A
I
C
= 50A
V
CE
= 600 V
-di
F
/dt [A/μs]
T
VJ
=125°C
V
R
= 600 V
T
VJ
=125°C
V
R
=600V
15 A
30 A
60 A
-di
F
/dt [A/μs] -di
F
/dt [A/μs]
15 A
30 A
60 A
T
VJ
= 125°C
V
R
=600V
15 A
30 A
60 A
T
VJ
=125°C
V
R
=600V
T
VJ
=125°C
25°C
2
Riti
[K/W] [s]
1 0.341 0.0025
20.2170.03
30.3480.03
40.2940.08
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
0 20 40 60 80 100 120
0
2
4
6
8
10
0.001 0.01 0.1 1 10
0.01
0.1
1
0 50 100 150 200
0
5
10
15
20
12 16 20 24 28 32
4.0
4.5
5.0
5.5
6.0
5791113681012
0
20
40
60
80
100
01234
0
20
40
60
80
100
0123
0
20
40
60
80
100
Q
G
[nC]
t[s]
E
[mJ]
I
C
[A]
I
C
[A]
I
C
[A]
V
CE
[V] V
CE
[V]
E
[mJ]
Z
thJC
[K/W]
E
off
E
on
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
V
CE
[V]
I
C
[A] R
G
[Ohm]
9V
11 V
13 V
E
on
E
off
V
GE
[V]
V
GE
=15V
17 V
19 V
T
VJ
= 125°C
25°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
I
C
= 50A
V
CE
= 600 V
R
G
=15Ohm
V
CE
= 600 V
V
GE
=±15V
T
VJ
=125°C
I
C
=50A
V
CE
= 600 V
V
GE
=±15V
T
VJ
=125°C
Inverter IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
MIXA60WH1200TEH
preliminary
600 800 1000 1200
200
300
400
500
600
700
0.001 0.01 0.1 1 10
0.01
0.1
1
0 50 100 150 200
0
5
10
15
20
600 800 1000 1200
0.0
0.8
1.6
2.4
3.2
4.0
600 800 1000 1200
20
30
40
50
60
70
80
90
600 800 1000 1200
2
4
6
8
10
12
14
0123
0
20
40
60
80
100
120
T
VJ
[°C]
t[s]
E
rec
[mJ]
I
RR
[A]
Q
rr
[μC]
I
C
[A]
V
CE
[V] -di
F
/dt [A/μs]
t
rr
[ns]
Z
thJC
[K/W]
Fig. 1 Typ. Forward current
versus V
F
Fig. 2 Typ. reverse recovery
charge Q
rr
versus di/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. recovery energy
E
rec
versus -di/dt
Fig. 7 Transient thermal impedance junction to case
30 A
60 A
120A
K
f
TVJ =125°C
25°C
IC= 50A
VCE = 600 V
-di
F
/dt [A/μs]
TVJ = 125°C
VR=600V TVJ =125°C
VR=600V
30 A
60 A
120A
-di
F
/dt [A/μs] -di
F
/dt [A/μs]
30 A
60 A
120A
TVJ =125°C
VR=600V
30 A
60 A
120A
TVJ =125°C
VR= 600 V
Inverter Diode
IXYS reserves the right to change limits, conditions and dimensions. 20111111bData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
