MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE(sat) = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC Part number MIXA60WH1200TEH Backside: isolated 25 26 24 23 22 17 7 1 2 3 8 16 13 19 21 18 20 6 5 14 15 9 NTC 10 4 11 12 27 28 Features / Advantages: Applications: Package: Thyristor/Standard Rectifier for line frequency Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fans Housing: E3-Pack IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved _International standard package _RoHS compliant _Isolation voltage: 3600 V~ _Advanced power cycling Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1700 Unit V VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25C 100 A VR/D = 1600 V TVJ = 150C 20 mA VT IT = forward voltage drop min. typ. TVJ = 25C 80 A I T = 160 A IT = TVJ = 125 C 80 A I T = 160 A TC = 80C I DAV bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case 180 sine R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing CJ junction capacitance PGM max. gate power dissipation average gate power dissipation (di/dt) cr critical rate of rise of current V 1.42 V 1.97 V T VJ = 150 C 135 A TVJ = 150 C 0.85 V 7.1 m 0.65 K/W K/W 0.10 TC = 25C 190 W t = 10 ms; (50 Hz), sine TVJ = 45C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 C 595 A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 A t = 10 ms; (50 Hz), sine TVJ = 45C 2.45 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.37 kAs TVJ = 150 C 1.77 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C t P = 30 s T C = 150 C 1.73 kAs 32 t P = 300 s PGAV V d= for power loss calculation only Ptot 1.43 1.86 TVJ = 125C; f = 50 Hz repetitive, IT = 150 A pF 10 W 5 W 0.5 W 100 A/s t P = 200 s; di G /dt = 0.45 A/s I G = 0.45 A; VD = VDRM non-repet., IT = 45 A 500 A/s TVJ = 125 C 1000 V/s (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 78 mA TVJ = -40 C 200 mA TVJ = 125 C 0.2 V 5 mA TVJ = 25 C 450 mA VD = VDRM R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 200 s IG = V 10 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time VR = 100 V; I T = 20 A; VD = VDRM TVJ = 150 C IG = 0.45 A; di G /dt = 0.45 A/s di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 150 s 15 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient collector gate voltage 30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25C 60 A TC = 80C 40 A 195 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 1.5 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V TC = 25C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 35 A t d(on) turn-on delay time I C = 35 A; VGE= 15 V TVJ = 25C 1.8 TVJ = 125C 2.1 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25C inductive load 5.9 TVJ = 125C VGE = 15 V; R G = 27 short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = 15 V I SC short circuit current R G = 27 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 2.1 mA mA 0.1 nA 106 nC 70 ns 40 ns 250 ns 100 ns 3.8 mJ 4.1 mJ TVJ = 125C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 35 A VGE = 15 V; R G = 27 5.4 V TVJ = 125C 105 A 10 s A 140 0.64 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 44 A TC = 80C 29 A TVJ = 25C 2.20 V TVJ = 125C 1.95 V TVJ = 25C 0.1 mA TVJ = 125C 0.15 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 600 A/s t rr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 600 V 30 A 3.5 C 30 A TVJ = 125C 350 ns 0.9 mJ 1.2 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20111111b MIXA60WH1200TEH preliminary Ratings Inverter IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient collector gate voltage 30 V I C25 collector current TVJ = I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage IC = 2 I CES collector emitter leakage current VCE = VCES; VGE = 0 V I GES gate emitter leakage current VGE = 20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 55 A t d(on) turn-on delay time TC = 25C 85 A TC = 80C 60 A 290 W 2.1 V TC = 25C I C = 55 A; VGE = 15 V mA; VGE = VCE TVJ = 25C 1.8 TVJ = 125C 2.1 TVJ = 25C current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM inductive load 5.9 TVJ = 125C VGE = 15 V; R G = 15 short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = 15 V I SC short circuit current R G = 15 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 6.5 V 0.5 mA mA 0.2 nA 165 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125C VCEmax = 1200 V SCSOA V 500 VCE = 600 V; IC = 55 A VGE = 15 V; R G = 15 5.4 TVJ = 25C TVJ = 125C tr typ. 25C TVJ = 125C 150 A 10 s A 200 0.43 K/W K/W 0.10 Inverter Diode VRRM max. repetitive reverse voltage I F25 forward current I F80 VF forward voltage I F = 60 A TVJ = 25C 1200 V TC = 25C 88 A TC = 80C 59 A 2.20 V TVJ = 25C TVJ = 125C IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved VR = 600 V -di F /dt = 1200 A/s IF = 60 A; VGE = 0 V 0.3 TVJ = 25C TVJ = 125C TVJ = 125C V 1.95 mA 1.2 mA 8 C 60 A 350 ns 2.5 mJ 0.6 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20111111b MIXA60WH1200TEH preliminary Package Ratings E3-Pack Symbol I RMS Definition Conditions min. RMS current per terminal Tstg storage temperature -40 T VJ virtual junction temperature -40 Weight mounting torque VISOL isolation voltage Unit A 125 C 150 C 3 t = 1 second 50/60 Hz, RMS; IISOL 1 mA t = 1 minute d Spb/Apb max. 300 270 MD d Spp/App typ. XXX XX-XXXXX Logo UL Part number Ordering Standard 6 Nm 3600 V 3000 V terminal to terminal 6.0 mm terminal to backside 12.0 mm creepage distance on surface | striking distance through air 2D Data Matrix g Part number M I X A 60 WH 1200 T EH YYWWx Date Code Location Part Number MIXA60WH1200TEH = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor E3-Pack Marking on Product MIXA60WH1200TEH Similar Part MIXA60WB1200TEH Package E3-Pack Delivery Mode Box Quantity 5 Code No. 509622 Voltage class 1200 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25 B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 k 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150C * on die level Rectifier Brake IGBT Brake Diode Inverter IGBT Inverter Diode V 0 max threshold voltage 0.85 1.1 1.2 1.1 1.22 R 0 max slope resistance * 3.9 40 27 25.1 13 IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Outlines E3-Pack 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 26 27 28 7 1 2 3 4 5 6 25 26 24 23 22 17 7 1 2 3 8 9 16 13 19 21 18 20 6 5 14 15 NTC 10 4 11 12 27 28 IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Rectifier 150 10000 500 VR = 0 V 50 Hz 80 % VRRM 120 400 90 300 TVJ = 45C TVJ = 45C 1000 [A] 200 [A] 60 [A s] TVJ = 150C TVJ =125C 30 100 TVJ = 25C 0 0.0 0.4 0.8 1.2 100 1.6 0 0.001 2.0 1 0.01 0.1 10 1 [s] [V] Fig.1 F orward current versus voltage drop per diode 10 TVJ =150C 2 [ms] 2 Fig.2 Surge overload current Fig.3 I t versus time per diode 150 TVJ = 25C 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 120 typ. Limit 90 1 [s] [V] [A] 60 30 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 0.1 1 10 100 1000 0 0 10000 [mA] 40 [mA] Fig. 4 Gate trigger characteristics 80 120 160 [C] Fig. 5 Gate trigger delay time Fig. 6 Max. forward current versus case temperature 0.7 250 0.5 RthKA K/W = 0.2 0.6 200 0.5 150 0.4 1 0.3 100 [W] 50 2 3 0.2 5 0.1 0 0 30 60 90 120 0 25 50 75 100 125 150 [A] [C] IXYS reserves the right to change limits, conditions and dimensions. 1 2 3 4 0.0 0.001 0.01 0.1 0.030 0.083 0.361 0.176 1 ti [s] 0.0005 0.008 0.094 0.45 10 [s] Fig.7 Power dissipation versus direct output current and ambient temperature, sine 180 (c) 2011 IXYS all rights reserved Ri [K/W] [K/W] 1.5 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Brake IGBT 70 70 TVJ = 125C 25C 60 60 50 IC 40 IC [A] 30 [A] 11 V 60 50 50 40 IC 40 30 20 20 10 10 0 70 13 V VGE = 15 V 17 V 19 V 9V [A] 30 20 TVJ = 125C 10 0 0 1 2 3 1 2 3 4 5 5 6 7 8 Fig. 2 Typ. output characteristics Fig. 3 10 20 IC = 35 A VCE = 600 V 10 11 12 13 Typ. transfer characteristics 6 RG = 27 Ohm VCE = 600 V VGE = 15 V TVJ = 125C 8 15 E 9 VCE [V] VCE [V] Fig. 1 Typ. output characteristics 10 TVJ = 25C 0 0 VCE [V] VGE TVJ = 125C IC = 35 A VCE = 600 V VGE = 15 V TVJ = 125C Eon Eoff 6 Eon 5 E [mJ] [mJ] 4 [V] Eoff 4 5 2 0 0 0 20 40 60 0 80 100 120 140 20 40 QG [nC] 60 80 40 60 80 RG [Ohm] IC [A] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 3 20 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 Ri ti [K/W] [s] [K/W] 1 2 3 4 0.01 0.001 0.01 0.1 1 0.152 0.072 0.308 0.108 0.0025 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Brake Diode 7 60 6 70 TVJ = 125C VR = 600 V IC 60 A 4 30 A 40 30 A 15 A [A] [C] 20 50 IRR Qrr [A] 60 A 60 5 40 TVJ = 125C VR = 600 V 3 30 15 A TVJ = 125C 25C 2 0 20 1 0 1 2 3 10 400 600 800 1000 400 -diF /dt [A/s] VCE [V] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 700 20 IC = 50 A VCE = 600 V 600 800 1000 -diF /dt [A/s] Fig. 3 Typ. peak reverse current IRM versus di/dt 2.0 TVJ = 125C VR = 600 V TVJ = 125C VR = 600 V 600 1.6 15 60 A 500 10 400 Erec 300 [mJ] [ns] 0.8 60 A 5 30 A 200 0 50 100 150 200 600 800 1000 400 600 800 1000 -diF /dt [A/s] -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.4 0.0 400 TVJ [C] 15 A 15 A 100 0 30 A 1.2 trr Fig. 6 Typ. recovery energy Erec versus -di/dt 2 1 ZthJC 0.1 Ri ti [K/W] [s] [K/W] 1 2 3 4 0.01 0.001 0.01 0.1 1 0.341 0.217 0.348 0.294 0.0025 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Inverter IGBT 100 100 TVJ = 125C 25C 80 100 13 V VGE = 15 V 17 V 19 V 80 11 V 80 60 IC 60 IC [A] 40 [A] 40 IC 60 9V [A] 40 TVJ = 125C 20 20 20 TVJ = 25C TVJ = 125C 0 0 0 1 2 3 0 0 1 2 3 4 5 6 Fig. 2 Fig. 1 Typ. output characteristics 20 8 15 VGE E [mJ] 10 [V] Fig. 3 Eoff 6 5.0 [mJ] 4.5 4.0 0 150 200 0 20 40 QG [nC] 60 80 100 120 12 16 20 24 28 32 RG [Ohm] IC [A] Fig. 4 Dynamic parameters Qr, IRM versus TVJ IC = 50 A VCE = 600 V VGE = 15 V TVJ = 125C Eon 2 100 Typ. transfer characteristics E 5 50 10 11 12 13 Eoff 5.5 4 0 9 6.0 Eon RG = 15 Ohm VCE = 600 V VGE = 15 V TVJ = 125C 8 VCE [V] Typ. output characteristics 10 IC = 50 A VCE = 600 V 0 7 VCE [V] VCE [V] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Inverter Diode 120 14 TVJ = 125C 25C 100 90 TVJ = 125C VR = 600 V 12 120A 10 80 IC Qrr 60 [A] TVJ = 125C VR = 600 V 80 60 A 8 120A 70 IRR 60 A 60 30 A [A] 50 [C] 6 40 30 A 40 4 20 30 2 0 0 1 2 3 600 800 1000 20 600 1200 -diF /dt [A/s] VCE [V] 4.0 TVJ = 125C VR = 600 V TVJ = 125C VR = 600 V IC = 50 A VCE = 600 V 1200 Fig. 3 Typ. peak reverse current IRM versus di/dt 700 20 1000 -diF /dt [A/s] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 800 600 3.2 500 2.4 120A 15 Kf 10 60 A Erec trr 400 120A [ns] 60 A 5 300 30 A 1.6 [mJ] 0.8 30 A 0 0 50 100 150 200 600 200 TVJ [C] 800 1000 0.0 600 1200 -diF /dt [A/s] 1000 1200 -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 800 Fig. 6 Typ. recovery energy Erec versus -di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b