2011. 4. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
2N7002KA
N Channel MOSFET
ESD Protected 2000V
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
·ESD Protected 2000V.
·High density cell design for low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capablity.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. SOURCE
2. GATE
3. DRAIN
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 μA
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 μA
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - --10 μA
ESD-Capability* -
C=100pF, R=1.5KΩ
Both forward and reverse
direction 3 pulse
2000 - - V
G
D
S
Type Name
Marking
Lot No.
2P
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Drain Current
Continuous ID300
mA
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2) PD350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note 1) Pulse Width≤10㎲, Duty Cycle≤1%
Note 2) Package mounted on 99% Alumina 10×8×0.6mm
*Failure cirterion : IDSS > 1μA at VDS=60V, IGSSF>10μA at VGS=20V, IGSSR>-10μA at VGS=-20V.
2011. 4. 4 2/3
2N7002KA
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250μA1.1 - 2.35 V
Drain-Source ON Resistance RDS(ON)
VGS=10V, ID=500mA - - 2.3 Ω
VGS=5V, ID=50mA - 1.7 2.7
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note 1) - - 1.15 V
DYNAMIC CHARACTERISTICS
SWITCHING TIME TEST CIRCUIT
Note 3) Pulse Test : Pulse Width≤80㎲, Duty Cycle≤1%
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss
VDS=25V, VGS=0V, f=1㎒
- 18.0 -
pF
Reverse Transfer Capacitance Crss - 3.0 -
Output Capacitance Coss - 7.0 -
Switching Time
Turn-On Time ton VDD=30V, RL=155Ω, ID=190㎃,
VGS=10V
- 15 -
nS
Turn-Off Time toff - 40 -
2011. 4. 4 3/3
2N7002KA
Revision No : 1
