SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E B L *ESD Protected 2000V. L *High density cell design for low RDS(ON). D *Voltage controlled small signal switch. 2 H A 3 G *Rugged and reliable. *High saturation current capablity. 1 Q CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Continuous ID 300 Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 350 mW Junction Temperature Tj 150 Tstg -55150 J K C MAXIMUM RATING (Ta=25) P N P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN Drain Current mA Storage Temperature Range SOT-23 Note 1) Pulse Width10, Duty Cycle1% Note 2) Package mounted on 99% Alumina 10x8x0.6mm EQUIVALENT CIRCUIT D Marking Lot No. 2P Type Name G S ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A 2000 - - V ESD-Capability* - C=100pF, R=1.5K Both forward and reverse direction 3 pulse *Failure cirterion : IDSS > 1A at VDS=60V, IGSSF>10A at VGS=20V, IGSSR>-10A at VGS=-20V. 2011. 4. 4 Revision No : 1 1/3 2N7002KA ELECTRICAL CHARACTERISTICS (Ta=25) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250A 1.1 - 2.35 V VGS=10V, ID=500mA - - 2.3 VGS=5V, ID=50mA - 1.7 2.7 VGS=0V, IS=200mA (Note 1) - - 1.15 V MIN. TYP. MAX. UNIT - 18.0 - - 3.0 - - 7.0 - RDS(ON) Drain-Source ON Resistance VSD Drain-Source Diode Forward Voltage Note 3) Pulse Test : Pulse Width80, Duty Cycle1% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1 Turn-On Time ton VDD=30V, RL=155, ID=190, - 15 - Turn-Off Time toff VGS=10V - 40 - Switching Time pF nS SWITCHING TIME TEST CIRCUIT 2011. 4. 4 Revision No : 1 2/3 2N7002KA 2011. 4. 4 Revision No : 1 3/3