2 Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25
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C unless otherwise noted)
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Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
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Collector Cutoff Current
(VCE = 70 Vdc, RBE = 100 Ohms)
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Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
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Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
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Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
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DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
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Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
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Base–Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
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Second Breakdown Collector Current with Base Forward Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
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Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
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Small–Signal Current Gain
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
kHz
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
v
2.0%.
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
IC, COLLECTOR CURRENT (AMPS)
10
5.0
0.1
0.3
2.0
3.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0 2.0 4.0 6.0 10 20
0.2
0.5
1.0
20
30
50
100
40 60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
TJ = 150
°
C
300
µ
s
1.0 ms
10 ms
dc
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature.