BCX41, BSS64
1 Aug-20-2001
NPN Silicon AF and Switching Transistors
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX42, BSS63 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCX41
BSS64 EKs
AMs 1 = B
1 = B 2 = E
2 = E 3 = C
3 = C SOT23
SOT23
Maximum Ratings
Parameter Symbol BSS64 BCX41 Unit
Collector-emitter voltage VCEO 80 125 V
Collector-base voltage VCBO 120 125
Emitter-base voltage VEBO 5 5
DC collector current IC800 mA
Peak collector current ICM 1 A
Base current mA100
IB
Peak base current IBM 200
Total power dissipation, TS = 79 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCX41, BSS64
2 Aug-20-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSS64
BCX41
V(BR)CEO
80
125
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BSS64
BCX41
V(BR)CBO
120
125
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
BSS64
BCX41
ICBO
-
-
-
-
100
100
nA
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
VCB = 100 V, IE = 0 , TA = 150 °C
BSS64
BCX41
ICBO
-
-
-
-
20
20
µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
Collector cutoff current
VCE = 100 V, TA = 85 °C
VCE = 100 V, TA = 125 °C
BCX41
BCX41
ICEO
-
-
-
-
10
75
µA
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 4 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 20 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
BCX41
BSS64
BSS64
BSS64
BSS64
BCX41
BCX41
hFE
25
-
20
-
-
63
40
-
60
80
80
55
-
-
-
-
-
-
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
BCX41, BSS64
3 Aug-20-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
IC = 4 mA, IB = 0.4 mA
IC = 50 mA, IB = 15 mA
BCX41
BSS64
BSS64
VCEsat
-
-
-
-
-
-
0.9
0.7
3
V
Base-emitter saturation voltage 1)
IC = 300 mA, IB = 30 mA
BCX41 VBEsat - - 1.4
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 12 - pF
BCX41, BSS64
4 Aug-20-2001
Collector current IC = f (VBE)
VCE = 1V
10 0
BCX 41/BSS 64 EHP00421
VBE
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
23
150
25
-50
1
TA=
C
Ι
˚C
˚C
˚C
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Transition frequency fT = f (IC)
VCE = 5V
10 10 10 10
BCX 41/BSS 64 EHP00423
f
mA
MHz
0123
5
T
3
10
10
2
1
10
5
5
5
C
Ι
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00422BCX 41/BSS 64
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
BCX41, BSS64
5 Aug-20-2001
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 03
BCX 41/BSS 64 EHP00424
V
BE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
12
150
25
-50
C
Ι
˚C
˚C
˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0 400 800
BCX 41/BSS 64 EHP00425
VCE sat
mV
mA
10
3
0
10
10
10
1
10
10
2
10
5
5
5
10 200 600
150
25
-50
-1
C
Ι
˚C
˚C
˚C
Collector cutoff current ICBO = f (TA)
VCB = 80V
10 0 50 100 150
BCX 41/BSS 64 EHP00426
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
˚C
DC current gain hFE = f (IC)
VCE = 1V
10 10 10 10
BCX 41/BSS 64 EHP00427
h
mA
-1 0 2 3
FE
3
10
102
1
10
5
5
1
10
150
25
-50
555
C
Ι
˚C
˚C
˚C