1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features
nTypical 2-carrier W-CDMA performance at a frequency of 2110 MHz:
uAverage output power=2W
uPower gain = 30 dB (typ)
uEfficiency=9%
uIMD3 = −48 dBc
uACPR = −50 dBc
nIntegrated temperature compensated bias
nExcellent thermal stability
nBiasing of individual stages is externally accessible
nIntegrated ESD protection
nSmall component size, very suitable for PA size reduction
nOn-chip matching (input matched to 50 Ohm, output partially matched)
nHigh power gain
nDesigned for broadband operation (2100 MHz to 2200 MHz)
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 03 — 21 November 2008 Preliminary data sheet
Table 1. Typical performance
Typical RF performance at T
h
= 25
°
C.
Mode of operation f VDS PL(AV) GpηDIMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA 2110 to 2170 28 2 29.5 9 −48[1] −50[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 2 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
2. Pinning information
2.1 Pinning
2.2 Pin description
3. Ordering information
Transparent top view.
Fig 1. Pin configuration
BLM6G22-30
BLM6G22-30G
GND GND
VDS1
n.c. n.c.
n.c.
n.c.
RF_INPUT RF_OUTPUT/VDS2
n.c.
n.c.
VGS1 n.c.
VGS2
GND GND
001aae321
1
2
3
4
5
6
7
8
9
10
11 12
13
14
15
16
Table 2. Pin description
Symbol Pin Description
GND 1, 11, 12, 16 ground
VDS1 2 first stage drain-source voltage
n.c. 3, 4, 5, 7, 8, 13, 15 not connected
RF_INPUT 6 RF input
VGS1 9 first stage gate-source voltage
VGS2 10 second stage gate-source voltage
RF_OUT/VDS2 14 RF output or second stage drain-source voltage
RF_GND flange RF ground
Table 3. Ordering information
Type number Package
Name Description Version
BLM6G22-30 HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1
BLM6G22-30G HSOP16 plastic, heatsink small outline package; 16 leads SOT822-1
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 3 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
4. Block diagram
5. Limiting values
6. Thermal characteristics
[1] Thermal resistance is determined under specific RF operating conditions.
Fig 2. Block diagram of BLM6G22-30 and BLM6G22-30G
001aah621
2
VDS1 14 RF_OUTPUT/VDS2
6
RF_INPUT
9
VGS1 10
VGS2
TEMPERATURE
COMPENSATED BIAS
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
ID1 first stage drain current - 3 A
ID2 second stage drain current - 9 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-c)1 first stage thermal resistance
from junction to case Tcase = 25 °C; PL=2W;
2-carrier W-CDMA [1] 3.9 K/W
Rth(j-c)2 secondstagethermal resistance
from junction to case Tcase = 25 °C; PL=2W;
2-carrier W-CDMA [1] 2.1 K/W
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 4 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
7. Characteristics
8. Application information
8.1 Ruggedness
The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA.
8.2 Impedance information
[1] Device input impedance as measured from gate to ground.
[2] Test circuit impedance as measured from drain to ground.
Table 6. Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz;
f
4
= 2167.5 MHz; V
DS
=28V;I
Dq1
= 270 mA; I
Dq2
= 280 mA; T
h
=25
°
C unless otherwise specified;
in a production test circuit as described in Section 9 “Test information”.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 2 W 27.5 30 32.5 dB
RLin input return loss PL(AV) = 2 W 10 14 - dB
ηDdrain efficiency PL(AV) = 2 W 7.5 9 - %
IMD3 third order intermodulation distortion PL(AV) = 2 W - −48 −44.5 dBc
ACPR adjacent channel power ratio PL(AV) = 2 W - −50 −47 dBc
Table 7. Typical impedance
f Zi[1] ZL[2]
MHz Ω Ω
2075 40.9 + j22.8 18.0 − j5.5
2085 41.2 + j23.2 17.8 − j5.6
2095 41.6 + j23.3 17.7 − j5.7
2105 41.9 + j23.3 17.7 − j5.9
2115 42.1 + j23.3 17.6 − j6.0
2125 42.2 + j23.2 17.4 − j6.0
2135 42.4 + j23.1 17.3 − j6.1
2145 42.3 + j22.9 17.2 − j6.1
2155 42.5 + j22.8 17.0 − j6.2
2165 42.6 + j22.8 16.8 − j6.3
2175 42.7 + j22.8 16.6 − j6.4
2185 43.0 + j23.0 16.4 − j6.6
2195 43.6 + j23.1 16.3 − j6.9
2205 44.2 + j23.3 16.1 − j7.2
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 5 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
8.3 Performance curves
Performance curves are measured in a BLM6G22-30G application circuit.
Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA;
IDq2 = 280 mA; carrier spacing = 10 MHz. Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA;
IDq2 = 280 mA; carrier spacing = 10 MHz.
Fig 3. 2-carrier W-CDMA power gain and drain
efficiency as functions of frequency;
typical values
Fig 4. 2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of frequency; typical values
VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA;
carrier spacing = 10 MHz.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA;
carrier spacing = 10 MHz.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as functions of
average output power and temperature;
typical values
Fig 6. 2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of average output power and
temperature; typical values
f (MHz)
2050 225022002100 2150
001aah622
29
31
27
33
35
Gp
(dB)
25
9
11
7
13
15ηD
(%)
5
Gp
ηD
f (MHz)
2050 225022002100 2150
001aah623
−49
−47
−45
IMD3,
ACPR
(dBc)
−51
IMD3
ACPR
001aah624
30
26
34
38
28
32
36
Gp
(dB)
24
15
5
25
35
10
20
30
ηD
(%)
0
PL(AV) (W)
10−1102
101
(1)
(1), (2), (3)
(2)
(3) Gp
Gp
Gp
ηD
001aah625
−40
−50
−30
−20
−45
−35
−25
IMD3,
ACPR
(dBc)
−55
PL(AV) (W)
10−1102
101
(1)
(1)
(2)
(2)
(3)
(3)
IMD3
ACPR
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 6 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
f = 2140 MHz; IDq1 = 270 mA; IDq2 = 280 mA.
(1) VDS = 24 V
(2) VDS = 28 V
(3) VDS = 32 V
IDq1 = 270 mA; IDq2 = 280 mA; f1= 2140 MHz;
f2= 2140.1 MHz.
Fig 7. One-tone CW power gain as function of output
power and drain-source voltage; typical value Fig 8. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
value
Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on
the CCDF.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
Fig 9. Single-carrier peak output power as function of frequency and temperature; typical values
PL (W)
0403010 20
001aah626
28
26
30
32
Gp
(dB)
24
(1) (2) (3)
001aah627
−60
−80
−40
−20
−70
−50
−30
IMD
(dBc)
−90
PL(PEP) (W)
10−1102
101
IMD3
IMD5
IMD7
f (MHz)
2050 225022002100 2150
001aah628
23
27
19
31
35
PL(M)
(W)
15
(1)
(2)
(3)
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 7 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
9. Test information
[1] American Technical Ceramics (ATC) type 100A or capacitor of same quality.
Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with εr = 3.5; thickness = 0.76 mm.
See Table 8 for a list of components.
Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA
001aah629
C3
C1
C4
R1
C2 C8
R2
C5
C7
C6
C10
C12
C9 C11
C15
C13 C14
Table 8. List of components
For test circuit see Figure 10.
Component Description Value Remarks
C1, C13 multilayer ceramic chip capacitor 0.3 pF [1]
C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 µF; 50 V
C3, C15 electrolytic capacitor 220 µF; 35 V
C5, C9, C10, C14 multilayer ceramic chip capacitor 10 pF [1]
C6, C7 multilayer ceramic chip capacitor 100 nF
R1 SMD resistor 0805 1 kΩ
R2 SMD resistor 0805 3.9 kΩ
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 8 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
10. Package outline
Fig 11. Package outline SOT834-1 (HSOP16F)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT834-1
vMA
y
wM
wM
bp (10×)
wM
HSOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-1
e3(2×)
1216
111
detail X
Q1
A2
X
E
c
D
E2
e1
(6×)(2×)
e2(4×)
D2
Z
bp2
bp1 (5×)
D1
HE
E1
A
e
UNIT
mm
DIMENSIONS (mm are the original dimensions)
pin 1 index
0 5 10 mm
scale
A2
3.3
3.0
D2
1.1
0.9
HE
16.2
15.8
Q1
1.7
1.5 2.5
2.0
v
0.25
w
0.25
yZ
0.1
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bpc
0.32
0.23
e
1.02
e1
1.37
e2
3.81
e3
5.69
D(1)
16.0
15.8
E(1)
11.1
10.9
0.43
0.28
bp1
1.09
0.94
bp2
5.87
5.72
03-10-22
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 9 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Fig 12. Package outline SOT822-1 (HSOP16)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT822-1
SOT822-1
03-07-23
07-02-08
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included
UNIT A
max
mm 3.6 0.2
03.3
3.0 0.06
−0.06 0.43
0.28 1.09
0.94 5.87
5.72 16.0
15.8 13.0
12.6 11.1
10.9 1.37 5.69
A1
DIMENSIONS (mm are the original dimensions)
HSOP16: plastic, heatsink small outline package; 16 leads
0 5 10 mm
scale
A2A3
0.35
A4bpbp1 bp2 c
0.32
0.23
D(1) D1D2
1.1
0.9
E(1) E1
6.2
5.8
E2
2.9
2.5
e
1.02
e1e2e3
3.81
θ
8°
0°
1.1
0.8 0.1 2.5
2.0
HE
14.5
13.9
LpQ
1.5
1.4
v
0.25
w
0.25
y Z
y
DA
vA
M
X
E
c
E2
HE
detail X
θ
Q
A
(A3)
Lp
A4
A1
A2
bp (10×)wM
wM
wM
11
16
1
pin 1 index E1
D2
e3(2×)
e1(2×)
e2(4×)
e(6×)
bp2
bp1 (5×)
D1
12
Z
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 10 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
11. Handling information
11.1 ESD protection
11.2 Moisture sensitivity
12. Abbreviations
13. Revision history
Table 9. ESD protection characteristics
Test condition Class
Human Body Model (HBM) 1
Machine Model (MM) 1
Table 10. Moisture sensitivity level
Test methodology Class
JESD-22-A113 3
Table 11. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MMIC Monolithic Microwave Integrated Circuit
PA Power Amplifier
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 12. Revision history
Document ID Release date Data sheet status Change
notice Supersedes
BLM6G22-30_BLM6G22-30G_3 20081121 Preliminary data sheet - BLM6G22-30_BLM6G22-30G_2
Modifications: •Figure 5: updated
BLM6G22-30_BLM6G22-30G_2 20080904 Preliminary data sheet - BLM6G22-30_BLM6G22-30G_1
BLM6G22-30_BLM6G22-30G_1 20080303 Objective data sheet - -
BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 03 — 21 November 2008 11 of 12
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 November 2008
Document identifier: BLM6G22-30_BLM6G22-30G_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
8.3 Performance curves . . . . . . . . . . . . . . . . . . . . . 5
9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Handling information. . . . . . . . . . . . . . . . . . . . 10
11.1 ESD protection . . . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10
12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
15 Contact information. . . . . . . . . . . . . . . . . . . . . 11
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
