ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92167-AAS/A2
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
H11B1X, H11B2X, H11B3X
H11B1, H11B2, H11B3
DESCRIPTION
The H11B_ series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a
space efficient dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
1
3
2
4
6
5
Dimensions in mm
3.3
2.54
6.4
6.2
1.54
8.8
8.4 4.3
4.1
0.5
0.5
0.3
7.8
7.4
9.6
8.4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 80mA
Reverse Voltage 5V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Collector-base Voltage BVCBO 50V
Emitter-collector Voltage BVECO 5V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 in 2 available lead form :
- - STD
- G form
VDE 0884 in SMD approval pending
lSETI approved, reg. no.151786-18
10.16
0.26
OPTION G
5.08
max.
SURFACE MOUNT
OPTION SM
1.2
0.6 1.4
0.9
10.2
9.5
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)3VIR = 10µA
Reverse Current (IR)10 µAVR = 3V
Output Collector-emitter Breakdown (BVCEO)30 VIC = 1mA (note 2)
Collector-base Breakdown (BVCBO)30 VIC = 100µA
Emitter-collector Breakdown (BVECO)5VIE = 100µA
HFE 16K VCE = 5V, IC = 5mA
Collector-emitter Dark Current (ICEO)100 nA VCE = 10V
Coupled Current Transfer Ratio ( CTR )(Note 2)
H11B1 500 %1mA IF , 5V VCE
H11B2 200 %1mA IF , 5V VCE
H11B3 100 %1mA IF , 5V VCE
Collector-emitter Saturation VoltageVCE(SAT) 1.0 V1mA IF , 1mA IC
Input to Output Isolation Voltage VISO 5300 VRMS (note 1)
7500 VPK (note 1)
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Turn on Time ton 125 µsVCC= 10V, IC = 10mA,
Output Turn off Time toff 100 µsRL = 100Ω , fig.1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92167-AAS/A2
7/12/00
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC = 10V
IC = 10mA
Input
FIGURE 1
100Ω
DB92167-AAS/A2
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
20
0
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward current I F (mA)
IF = 1mA
IC = 1mA
80
100
0
0.5
1.0
1.5
Normalised Current Transfer
Ratio vs. Ambient Temperature
Normalised current transfer ratio
IF = 1mA
VCE = 5V
-30 0 25 50 75 100
Ambient temperature TA ( °C )
0
10
Current Transfer Ratio vs.
Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current I C (mA)
0 1 2 3 4 5
0
20
40
60
80
100
2mA
5mA
10mA
0.1 0.2 0.5 1 2 5 10 20 50 100
10000
1000
100
VCE = 5V
TA = 25°C
IF = 1mA
20
50mA TA = 25°C
50
5000
800
500