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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Symbol TA = 25C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units 60 78 - V - 0.001 7 1.0 500 A VGS=20V, VDS=0V - 0.2 10 nA 1.0 Off Characteristics (Note1) BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, ID=10uA Zero Gate Voltage Drain Current VDS=60V, VGS=0V VDS=60V, VGS=0V, @TC=125C IGSS Gate-Body Leakage On Characteristics (Note1) VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.76 2.0 V RDS(ON) Static Drain-Source On-Resistance - 1.6 2.53 7.5 13.5 On-State Drain Current VGS=5V, ID=0.05A, VGS=10V, ID=0.5A, @TJ=125C VGS=10V, VDS=7.5V 0.5 1.43 - A Forward Transconductance VDS=10V, ID=0.2A 80 356.5 - mS - 37.8 50 pF - 12.4 25 pF - 6.5 7.0 pF - 5.85 20 - 12.5 20 ID(ON) gFS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1.0MHz Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD=30V, ID=0.2A, VGEN=10V RL=150, RGEN=25 ns Note1 : Short duration test pulse used to minimize self-heating effect. (c) 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 www.fairchildsemi.com 2 2N7002W -- N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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