TEXAS INSTR {OPTO? b2 dePaiwi72b oosn18 1 ff a T=33-29 { 961726 TEXAS INSTR (OPTO) | 62C 36918 Se . TIP 140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED 4 SILICON POWER TRANSISTORS REVISED OCTOBER 1984 : Designed For Complementary Use With TIP145, TIP 146, TIP147 | e 128 W at 25C Case Temperature . @ 10 A Rated Collector Current : Min hee of 1000 at 4V,5A @ 100 mJ Reverse Energy Rating device schematic TO-218AA PACKAGE EMITTER COLLECTOR BASE THE COLLECTOR !S IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP140 TiP441 TIP142 base current current current areas at case temperature at case temperature at temperature anergy storage temperature range mm case NOTES: 1. This value applies for ty, <0.3 ms, duty cycle < 10 %. 2. Derate linearly to 150C case temperature at the rate of 1 W/C or refer to Dissipation Derating Curve, Figure 9. 3. Derate linearly to 150C free-air temperature at the rate of 28 mW/C or refer to Dissipation Derating Curve, Figure 10, 4. This rating is based on the capability of the transistors to operate safely in the circuit of Figure 2. L = 20mH, Reg2 = 100, Vap2 = OV, Rg = 0.19, Vcc = 20V, Energy = Ig 2L/2. o 2 > a Q Q. - wy TEXAS 5-177 INSTRUMENTS ; POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR LOPTO} b2 DEP accir7e, onse94 3 I 8961726 TEXAS INSTR COPTO) a 62C 36919 ~OD TIP140, TIP141, TIP142 T-33~-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature TIP140 TIP141 TIPi PARAMETER TEST CONDITIONS MIN TYP MAX | MIN TYP MAX | MIN TYP MAX VipRICEO | sceNote 5 : 60 80 100 IcEO icBo cE See Notes 5 and 6 CE = 4, See Notes 5 and 6 VBE See Notes S and 6 See Notes and 6 See Notes 5 and 6 HEoPap apap pagal bre Vce(sat) NOTES: 5. Thess parameters must be measured using pulse techniques, ty = 300ys, duty cycle < 2%. 6. These par are ed with voltag ing contacts separate from the current-carrying contacts and located within 3,2mm (0.125 inch) from the device body. : . resistive-load switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN TYP MAX] UNIT ton ic = 10A, lpy = 40mA, Ig2 = ~40mA, 0.9 toff VBE(off) = 4.2V. RL = 32, See Figure 4 41 ps - ai t Voltage and current values shown are nominal, exact values vary slightly with transistor parameters. a 0 Oo g | a | a i vu 5-178 TEXAS % INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR OPTOF be pefasbi7zes ooaseo o l 8961726 TEXAS INSTR (OPTO) 7 7 62C 36920 2D { f ABA , TIP140, TIP141, TIP142 . N-P-N DARLINGTON-CONNECTED ; SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T-33-29 OUTPUT ' MONITOR po OS etter cco sn-n 7 ests I | my Al | 1N914 1N914 1N914 ' | --* L wa : 270 pF , < : zon > Rape = 160 2 gs Fi=32 i Voen ; 3 - 1 uF } >= Vep2=4.2V ee ke + . * = Vece=30V tate a | Von =42 VAT = - i INPUT MONITOR wy . TEST CIRCUIT INPUT OV ae few wee oe MONITOR 4.2V I 10% ' t 4 > ton beg beo- tots OUTPUT MONITOR _ f VOLTAGE WAVEFORMS a oa NOTES: A. Vgenisa 30-V pulse into a 50 Q termination. . o B. The Vgen waveform is supplied by a generator with the following characteristics: tp < 15 ns, t < 15ns, Zoyt = 50Q, S tw = 20us, duty cycle = 2%. C. Waveforms are monitored on an oscilloscope with the following characteristics: ty 15ns, Rin > 10MQ, Cin < 11,5 pF. oO D. Resistors must be noninductive types. E. The d-c power supplies may require additional bypassing in order to minimize ringing. a. = FIGURE 1. RESISTIVE-LOAD SWITCHING I i ti TEXAS 5-179 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 -TEXAS INSTR {0PTO} Le DE ace1 724 0036921 1 i 8961726 TEXAS INSTR COPTO) oo 62C 36921 D ! TIP 140, TIP141, TIP142 T+33~-29 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ; et i 7 PARAMETER MEASUREMENT INFORMATION FD Veg MONITOR r 2NG127 602 INPUT : = Yeo =20V WANA - . L sro a ic MONITOR 2 2 Rs 012 > Fg me. . | 0 INPUT VOLTAGE 3V-- 3.164 COLLECTOR CURRENT 0 \ ViBRIcCER = COLLECTOR VOLTAGE 20V Vee (sat) ~ Le VOLTAGE AND CURRENT WAVEFORMS ! J ae ee pe ' { seo1aed di A NOTE A: fnput pulse duration is increased untillopy = 3.16 A. FIGURE 2. INDUCTIVE-LOAD SWITCHING t TEXAS wy INSTRUMENTS - oo y POST OFFICE BOX 225012 DALLAS, TEXAS 75265 5-180 rr aaINSTR LOPTO} be DEP aqe1726 on3n9e2 3 I nme tee "8961726 TEXAS INSTR (OPTOD ae 36922 ee . ; TIP 140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS i TYPICAL CHARACTERISTICS 1-33-29 _, STATIC FORWARD CURRENT TRANSFER RATIO BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT . CASE TEMPERATURE 40k 4 VceE=4V See Notes 5 and 6 Vce=4Vv See Notes 5 and 6 @ * 10k NON P Oo WK hee ~ Static Forward Current Transfer Ratio fy rd VBE ~ Base-Emitter Voltage - V NO 1.6 1.2 1k 0.8 0.4 400 0 0.4 1 4 10 -75 25 0 25 75 125 175 fc Collector Current A Tc Case Temperature C FIGURE 3 FIGURE 4 SMALL-SIGNAL COMMON-EMITTER COLLECTOR-EMITTER SATURATION VOLTAGE FORWARD CURRENT TRANSFER RATIO vs vs > CASE TEMPERATURE FREQUENCY 3 4 40 8 See Notes 5 and 6 5 Voce =10V $ B Liccta 5 Ip =40 mA, 1c =10A = Tce =25C @ 2 g 510 % 5 Zz 5 'E > Gy 5 z 4 oO 8 = a 3 % = | g =2mA,I=1A q 0.4 1 2 75 ~25 0 25 75 125 175 z 1 4 10 Teo Case Temperature c f Frequency ~- MHz FIGURE 5 . FIGURE 6 NOTES: 5. TheSe parameters must be measured using pulse techniques, tw = 300us, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 3,2 mm (0.125 inch) from the device body. i XAS Y 5-181 E INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR LOPTO} bo DEM 8961724 0036923 5 TU 8961726 TEXAS INSTR (OPTO) oo, 62C 36923 ! TIP 140, TIP141, TIP142 1-33-29, N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ve alt a - : - : , MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT MAXIMUM COLLECTOR CURRENT vs . . vs ~ COLLECTOR-EMITTER VOLTAGE UNCLAMPED INDUCTIVE LOAD 20 40 OC Operation To S25C Voc = 20V Rpp2 = 100 2 To = 25C See Figure 2 = > 10 io Maximum Collector Current A I Maximum Collector Current A 1 4 TIP140 TIP141 0.4 TIP142 See 0.2 1 10 a0 100 400 04 1 4 10 40 100 400 VcE Collector-Emitter Voltage ~ V L Unclamped Inductive Load mH FIGURE 7 ; FIGURE 8 . NOTE 7: Above this point the safe operating area has not been defined. [ THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE . DISSIPATION DERATING CURVE = a o 128 Rosa < 35.7 C/W Reuc <1C/w 100 = = 0 SODIA9 8 PyMaximum Continuous Device DissipationW N ~ a oi PyMaximum Continuous Device DissipationW oO 25 50 75 #100 6125 6(150 0 25 50 75 100 125 = 150 ToCase TemperatureC TaFree-Air TemperatureC FIGURE 9 . FIGURE 10 Texas - INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 5-182