SILICON PNP EPITAXIAL TYPE AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 2SA1203 Unit in mm 4.6 MAX, L6 MAX, FEATURES: ue: O4e008 1 . Suitable for Output Stage of 3 Watts Amplifier ol ox . Pc=l~2W (Mounted on Ceramic Substrate) Y 3 Small Flat Package i a et . Complementary to 2SC2883 | 5 +a0 04-005 MAXIMUM RATINGS (Ta=25C) L5+a1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBo -30 Vv Collector-Emitter Voltage VcEO -30 Vv Emitter-Base Voltage VEBO -5 Vv 1. BASE 2 COLLECTOR (HBAT SINK) Collector Current I ~1.5 A & EMITTER Base Current Ig -0.3 A TEDEG = Collector Power Dissipation Pc 500 mW ELAJ Collector Power Dissipation Po* 1000 mW TOSHIBA 2-5K1A Junction Temperature Tj 150 c Weight : 0.052 Storage Temperature Range Tstg -55~150] c Marking Type Name Pc: 2SA1203 mounted on ceramic substrate (250mm2 x 0.8t) HO hre Rank ELECTRICAL CHARACTERISTICS (Ta=25C) TU od CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp=-30V, IE=0 - - |-100 nA Emitter Cut-off Current IEBO VEB=-5V, Ic=0 - - -100 nA Collector-Emitter Tc=-10mA, Ip=0 -30 | - - Vv Breakdown Voltage V(BR)CEO | Tc=-10mA, Ip Emitter-Base Ige-lmA, Ic=0 -5 - - V Breakdown Voltage V(BR)EBO | TE=~imA, iC : hFE Vop=-2V, Ic=-500mA 100 - 320 DC Current Gain (Note) CE c Collector-Emitter Ic=-1.5A, Ip=-0.03A - - |-2.0 Vv Saturation Voltage Vce(sat) | Tc 7 1B Base-Emitter Voltage VBE Voge-2V, Ic=-500mA - - |-1.0 V Transition Frequency fr VoEt-2V, Ic=-500mA ~ 120 - MHz Collector Output Capacitance Cob Vcp=-10V, Ip=0, f=1MHz - - 50 pF Note : hpg Classification 0: 100~200, : 160 ~320 1592SA1203 COLLECTOREMITTER SATURATION X I COLLECTOR CURRENT Vor(sat) (V) VOLTAGE Ig (ma) CURRENT COLLECTOR 1000 500 300 -100 lo Vor COMMON EMITTER Ta=25C COLLECTOR-EMITTBR VOLTAGE -16 Vem (V) Vor(sat) ~ Ie COMMON EMITTBR I/Ip=50 Ta=100 25 25 100-300 1000 lg (mA) -10 30 3000 COLLECTOR CURRENT SAFE OPERATING AREA Ig MAX LSB) Ig MAX (CONTI-~ NUOUSE) NONREPETITIVE PULSE Ta=25T % SINGLE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE ~30 100 Vor (V) O3 -1l 3 10 COLLECTOR-EMITTER VOLTAGE -Ol 160 hrm Ic 1000 a a 50 Ta=100C = 300 a 30 COMMON EMITTER o Vope-eV Poy -l -3 -10 ~-30 -100 ~90 -1000 3000 COLLECTOR CURRENT Ic (mA) Ic VBR 18 COMMON EMITTER ~ np 2 Z Yor v 5 12 5 2 Ex oo a Qo a 4 m -O8 it Pp oO Ee oo o be @ -a4 4 a o oO a Oo a4 ~as -12 -16 BASE-EMITTER VOLTAGE Vag (V) Po Ta @) MOUNTED ON CERAMIC SUBSTRATE (250mm2xa8 @ Ta=25C 2 Pp 2 n COLLECTOR POWER DISSIPATION Po (Ww) ro) 14 Ta (C) 0 G 80 60 AMBIBINT TEMPERATURE 100 1