BUH515D (R) HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TVS 2 DESCRIPTION The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM R Typ. = 12 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1500 V 700 V V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 8 A 15 A 5 A IC I CM IB Collector Peak Current (t p < 5 ms) Base Current I BM Base Peak Current (t p < 5 ms) 8 A P tot Total Dissipation at T c = 25 o C 50 W V isol Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature 2500 V T stg July 2002 -65 to 150 o C 1/7 BUH515D THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Test Conditions Min. Typ. Max. Unit 10 0.2 2 A mA mA 200 mA Collector Cut-off Current (V BE = 0) V CE = 1300 V V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 5 V V CE(sat) Collector-Emitter Saturation Voltage IC = 5 A I B = 1.25 A 1.5 V V BE(sat) Base-Emitter Saturation Voltage IC = 5 A I B = 1.25 A 1.3 V DC Current Gain IC = 5 A IC = 5 A V CE = 5 V V CE = 5 V ts tf RESISTIVE LOAD Storage Time Fall Time V CC = 400 V I B1 = 1.5 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 5 A I B1 = 1.25 A VF Diode Forward Voltage I F = 5 A I EBO h FE V ceflyback T j = 125 o C T j = 100 o C IC = 5 A I B2 = -2.5 A f = 15625 Hz I B2 = -2.5 A = 1050 sin 106 t 10 2/7 10 2.4 170 V 3.6 260 Thermal Impedance s ns s ns 3.5 450 2 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area 5 3 V BUH515D Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7 BUH515D Switching Time Resistive Load BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at 16 KHz frequencies for choosing the optimum negative drive. The test circuit is illustrated in fig. 1. 4/7 Inductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BUH515D Figure 1: Inductive Load Switching Test Circuit Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUH515D ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m 6/7 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A BUH515D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7