PZT2222 / PZT2222A
PZT2222 / PZT2222A
NPN Suface Mount Si-Epitaxial Planar Switching Transistors
Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage NPN
Version 2006-05-09
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Power dissipation
Verlustleistung
1.3 W
Plastic case
Kunststoffgehäuse
SOT-223
Weight approx.
Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
PZT2222 PZT2222A
Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCEO 30 V 40 V
Collector-Base-volt. - Kollektor-Basis-Spannung B open VCBO 60 V 75 V
Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5 V 6 V
Power dissipation – Verlustleistung Ptot 1.3 W 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-cutoff current – Kollektor-Reststrom
IE = 0, VCB = 50 V PZT2222
PZT2222A
ICBO
ICBO
–
–
–
–
20 nA
10 nA
IE = 0, VCB = 50 V, Tj = 150°C PZT2222
PZT2222A
ICBO
ICBO
–
–
–
–
20 µA
10 µA
Emitter-cutoff current – Emitter-Reststrom
IC = 0, VEB = 3 V IEBO – –- 10 nA
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA PZT2222
PZT2222A
VCEsat
VCEsat
–
–
–
–
0.4 V
0.3 V
IC = 500 mA, IB = 50 mA PZT2222
PZT2222A
VCEsat
VCEsat
–
–
–
–
1.6 V
1.0 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
3.5
±0.2
1.65
7
±0.3
2.3 3.25
0.7
6.5
±0.2
3
±0.1
123
4
Type
Code
PZT2222 / PZT2222A
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA PZT2222
PZT2222A
VBEsat
VBEsat
–
–
–
–
1.3 V
1.2 V
IC = 500 mA, IB = 50 mA PZT2222
PZT2222A
VBEsat
VBEsat
–
–
–
–
2.6 V
2.0 V
DC current gain – Kollektor-Basis-Stromverhältnis
IC = 0.1 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V 2)
hFE
hFE
hFE
hFE
35
50
75
100
–
–
–
–
–
–
–
300
IC = 500 mA, VCE = 10 V 2) PZT2222
PZT2222A
hFE
hFE
30
40
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
IC = 20 mA, VCE = 20 V, f = 100 MHz fT200 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf
Switching times – Schaltzeiten
delay time
rise time
storage time
fall time
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
td– – 10 ns
tr– – 25 ns
ts– – 225 ns
tf– – 60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1)
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren PZT2907, PZT2907A
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
