© Semiconductor Components Industries, LLC, 2009
January, 2009 Rev. 0
1Publication Order Number:
MMBT5551M3/D
MMBT5551M3T5G
NPN High Voltage
Transistor
The MMBT5551M3T5G device is a spinoff of our popular
SOT23 threeleaded device. It is designed for general purpose high
voltage applications and is housed in the SOT723 surface mount
package. This device is ideal for lowpower surface mount
applications where board space is at a premium.
Features
Reduces Board Space
This is a HalideFree Device
This is a PbFree Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage VCEO 160 Vdc
Collector Base Voltage VCBO 180 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC60 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD265
2.1
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD640
5.1
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 195 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
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Device Package Shipping
ORDERING INFORMATION
MMBT5551M3T5G SOT723
(PbFree)
8000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT723
CASE 631AA
STYLE 1
1
2
3
AH M
AH = Specific Device Code
M = Date Code
MARKING
DIAGRAM
MMBT5551M3T5G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 160
Vdc
Collector Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 180
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 6.0
Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
100
100
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE 80
80
30
250
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.15
0.20
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
1.0
1.0
Vdc
Collector Emitter Cutoff
(VCB = 10 V)
(VCB = 75 V)
ICES
50
100
nA
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5551M3T5G
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3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
TJ = 125°C
-55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
10 mA 30 mA 100 mA
5.0
Figure 3. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
10-5
0.4 0.3 0.1
100
10-1
10-2
10-3
10-4
0.2 0 0.1 0.2 0.40.3 0.60.5
VCE = 30 V
TJ = 125°C
75°C
25°C
IC = ICES
, COLLECTOR CURRENT (A)μIC
REVERSE FORWARD
IC, COLLECTOR CURRENT (mA)
1.0
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50 100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0.1 0.2 0.5
Figure 4. “On” Voltages
0.8
0.6
0.4
0.2
0
3.0 300.3
MMBT5551M3T5G
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4
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
10.2 V
Vin
10 ms
INPUT PULSE
VBB
-8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
1000
0.3 1.0 10 20 30 50
0.50.2
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0 100 200
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
3.0 5.0
tr @ VCC = 30 V
td @ VEB(off) = 1.0 V
VCC = 120 V
IC, COLLECTOR CURRENT (mA)
5000
t, TIME (ns)
50
100
200
300
500
3000
2000
1000
0.3 1.0 10 20 30 50
0.50.2 2.0 100 2003.0 5.0
IC/IB = 10
TJ = 25°C
tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC, COLLECTOR CURRENT (mA)
2.5
qVC for VCE(sat)
qVB for VBE(sat)
Figure 5. Temperature Coefficients
TJ = -55°C to +135°C
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
2.0
1.5
1.0
0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances Figure 8. TurnOn Time
Figure 9. TurnOff Time
MMBT5551M3T5G
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5
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT723
CASE 631AA01
ISSUE C
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L0.15 0.20 0.25
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
MIN NOM MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
Y
X
X0.08 (0.0032) Y
2X
E
12
3
1.0
0.039
ǒmm
inchesǓ
SCALE 20:1
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MMBT5551M3/D
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