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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
3
1997 Fairchild Semiconductor Corporation
PNP Darlington Transistor
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
BCV26
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Symbol Parameter Value Units
VCEO Colle ctor-Emit t er Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
ICCollecto r Current - Continuo us 1.2 A
TJ, Tstg Operating and Stora ge Junction Tempe rature Range -55 to +150 °C
Symbol Characteristic Max Units
*BCV26
PDTotal Device Dissipatio n
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junctio n to Ambient 357 °C/W
C
B
E
SOT-23
Mark: FD
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BCV26
BCV26
Typical Characteristics
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)CEO Col lector-Emitter Breakdown Voltag e IC = 10 mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1
µ
A
IEBO Emi t t er-Cuto ff Current VEB = 10 V, IC = 0 0.1
µ
A
ON CHARACTERISTICS
hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
4,000
10,000
20,000
VCE(sat)Collector-Emitter Saturation Volta ge IC = 100 mA, IB = 0.1 mA 1.0 V
VBE(sat)Base-Emitter Satu ration Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 30 mA, VCE = 5.0 V,
f = 100 MHz 220 MHz
CCCollecto r Capacit ance VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF
PNP Darlington Transistor
(continued)
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Pu lsed C u rr en t Gain
vs Col lecto r C urrent
0.01 0.1 1
0
10
20
30
40
50
I - COLLECTOR CURRENT (A)
h - TYPICAL PUL S ED CURRENT G AIN (K)
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
C o ll ecto r -Em itter Satur ati o n
Vo lt ag e vs Co llector Cur rent
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (A)
V - COLLEC TOR EMITTE R VOLTAGE (V)
C
CESAT
β= 1000
25 °C
- 40 °C
125 °C
3
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
Typical Characteristics (continued)
I n put a n d Output Cap ac it a nc e
vs Reverse Bias Voltage
0.1 1 10 100
0
4
8
12
16
RE VER SE VO L TA GE (V)
CA PACI TAN CE (p F)
C
f = 1.0 M Hz
ib
Cob
B ase-Emitter Satur ati o n
V olt a ge v s Colle c tor Current
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - C OLLECTOR CUR RENT (A)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 4 0 °C
125 °C
β= 1000
Base Emitter ON Voltage vs
Coll ector Curre nt
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - C OLLECT OR CU RRENT (A)
V - BASE EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 5V
CE
25 °C
- 4 0 °C
125 °C
C o llector -C u toff Cur rent
vs A mb ient Temp e r ature
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TE M P E RATURE ( C)
I - COLLECTOR CU RRENT (nA)
A
CBO
°
V = 15V
CB
BCV26
PNP Darlington Transistor
(continued)
SOT-23 Packagin g
Configurat ion: Figure 1.0
Components Leader Tape
500mm minimum or
125 emp ty pocket s
Tr ailer Tape
300mm minimum or
75 empty pockets
SOT-23 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-23 Packaging Information
Standard
(no flow code) D87Z
Packaging type
Reel Si ze
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag 3,000 10,000
Bo x Dimen s i on (mm ) 187x107x183 343x343x64
Max qt y per B o x 24,000 30,000
Weight per unit (gm) 0.0082 0.0082
Weight per Reel (kg) 0.1175 0.4006
Human readable
Label
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Readable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (H eat Acti vated
Adhesive in nature) primaril y composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter r eel. Thi s and some other opti ons are
described in the Packaging Information table.
These full reel s are individually labeled and pl aced insi de
a standard intermediate made of recyclable corrugated
brown paper wi th a Fai r child l ogo pri nt i ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes i n dif f erent sizes depending on the number of part s
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
September 1999, Rev . C
©2000 Fairchild Semiconductor International
Dimensions are in millimeter
Pkg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23
(8mm)
3.15
+/-0.10 2.77
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
+/-0.10 6.25
min 3.50
+/-0.05 4.0
+/-0.1 4.0
+/-0.1 1.30
+/-0.10 0.228
+/-0.013 5.2
+/-0.3 0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 1 0.9
8m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 1 0.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maxim um
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
SOT-23 Reel Configuration: Figure 4.0
P1 A0
D1
FW
E1
E2
Tc
Wc
K0
T
B0
D0P0 P2
SOT-23 Tape and Reel Data, continued
September 1999, Rev . C
SOT-23 (FS PKG Code 49)
SOT-23 Package Dimensions
September 1998, Rev . A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Par t Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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This datasheet contains the design specifications for
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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