28C16A 16K (2K x 8) CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19 18 17 16 15 14 13 PLCC *1 2 3 4 5 6 7 8 9 10 11 12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS DIP * Pin 1 indicator on PLCC on top of package OE NC A9 A8 NC WE Vcc 1 2 3 4 5 6 7 NC NC A7 A6 A5 A4 A3 8 9 10 11 12 13 14 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 VSOP OE NC A9 A8 NC WE VCC NC NC A7 A6 A5 A4 A3 TSOP * Fast Read Access Time--150 ns * CMOS Technology for Low Power Dissipation - 30 mA Active - 100 A Standby * Fast Byte Write Time--200 s or 1 ms * Data Retention >200 years * High Endurance - Minimum 104 Erase/Write Cycles * Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches * Data polling * Chip Clear Operation * Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit * Electronic Signature for Device Identification * 5-Volt-Only Operation * Organized 2Kx8 JEDEC Standard Pinout * 24-pin Dual-In-Line Package * 32-pin PLCC Package * 28-pin Thin Small Outline Package (TSOP) 8x20mm * 28-pin Very Small Outline Package (VSOP) 8x13.4mm * Available for Extended Temperature Ranges: - Commercial: 0C to +70C - Industrial: -40C to +85C 4 A7 3 NC PACKAGE TYPES I/O1 I/O2 Vss NU I/O3 I/O4 I/O5 FEATURES 28 27 26 25 24 23 22 A10 CE I/07 I/06 I/05 I/04 I/03 21 20 19 18 17 16 15 Vss I/02 I/01 I/00 A0 A1 A2 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 BLOCK DIAGRAM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. During a "byte write", the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. To determine when a write cycle is complete, the 28C16A uses Data polling. Data polling allows the user to read the location last written to when the write operation is complete. CMOS design and processing enables this part to be used in systems where reduced power consumption and reliability are required. A complete family of packages is offered to provide the utmost flexibility in applications. I/O0 VSS VCC Data Protection Circuitry Chip Enable/ Output Enable Control Logic CE OE WE I/O7 Auto Erase/Write Timing Data Poll Input/Output Buffers Program Voltage Generation A0 L a t c h e s Y Decoder Y Gating X Decoder 16K bit Cell Matrix A10 1996 Microchip Technology Inc. DS11125G-page 1 This document was created with FrameMaker 4 0 4 28C16A 1.0 ELECTRICAL CHARACTERISTICS 1.1 MAXIMUM RATINGS* TABLE 1-1: Name VCC and input voltages w.r.t. VSS ....... -0.6V to + 6.25V A0 - A10 Voltage on OE w.r.t. VSS ..................... -0.6V to +13.5V Voltage on A9 w.r.t. VSS ...................... -0.6V to +13.5V Output Voltage w.r.t. VSS ................ -0.6V to VCC+0.6V Storage temperature .......................... -65C to +125C *Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Function Address Inputs CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Ambient temp. with power applied ....... -50C to +95C TABLE 1-2: PIN FUNCTION TABLE Data Inputs/Outputs VCC +5V Power Supply VSS Ground NC No Connect; No Internal Connection NU Not Used; No External Connection is Allowed READ/WRITE OPERATION DC CHARACTERISTICS VCC = +5V 10% Commercial (C): Tamb = 0C to Industrial (I): Tamb = -40C to Parameter +70C +85C Status Symbol Min Max Units Input Voltages Logic `1' Logic `0; VIH VIL 2.0 -0.1 VCC+1 0.8 V V Input Leakage -- ILI -10 10 A VIN = -0.1V to VCC+1 Input Capacitance -- CIN -- 10 pF VIN = 0V; Tamb = 25C; f = 1 MHz Logic `1' Logic `0' VOH VOL 2.4 0.45 V V IOH = -400A IOL = 2.1 mA Output Leakage -- ILO -10 10 A VOUT = -0.1V to VCC+0.1V Output Capacitance -- COUT -- 12 pF VIN = 0V; Tamb = 25C; f = 1 MHz Power Supply Current, Active TTL input ICC -- 30 mA f = 5 MHz (Note 1) VCC = 5.5V; Power Supply Current, Standby TTL input TTL input CMOS input ICC(S)TTL ICC(S)TTL ICC(S)CMOS -- 2 3 100 mA mA A CE = VIH (0C to +70C) CE = VIH (-40C to +85C) CE = VCC-0.3 to VCC+1 Output Voltages Note 1: Conditions AC power supply current above 5 MHz; 1 mA/MHz. DS11125G-page 2 1996 Microchip Technology Inc. 28C16A TABLE 1-3: READ OPERATION AC CHARACTERISTICS AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: Parameter VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; Vol = 0.8V 1 TTL Load + 100pF 20 ns Commercial (C): Tamb = 0C to +700C Industrial (I): Tamb = -40C to +85C 28C16A-15 28C16A-20 28C16A-25 Min Max Min Max Min Max Sym Units Conditions Address to Output Delay tACC -- 150 -- 200 -- 250 ns OE = CE = VIL CE to Output Delay tCE -- 150 -- 200 -- 250 ns OE = VIL OE to Output Delay tOE -- 70 -- 80 -- 100 ns CE = VIL CE or OE High to Output Float tOFF 0 50 0 55 0 70 ns Output Hold from CE or OE, whichever occurs first tOH 0 -- 0 -- 0 -- ns Endurance -- 1M -- 1M -- 1M -- cycles 25C, Vcc = 5.0V, Block Mode (Note) Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website. FIGURE 1-1: READ WAVEFORMS VIH Address Address Valid VIL VIH CE VIL t CE(2) VIH OE VIL VOH Data t OE(2) High Z t OFF(1,3) t OH Valid Output High Z VOL WE VIH t ACC VIL Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed up to t CE - t OE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested 1996 Microchip Technology Inc. DS11125G-page 3 28C16A TABLE 1-4: BYTE WRITE AC CHARACTERISTICS AC Testing Waveform: Output Load: Input Rise/Fall Times: Ambient Temperature: Parameter VIH = 2.4V and VIL = 0.45V; VOH = 2.0V; VOL = 0.8V 1 TTL Load + 100 pF 20 ns Commercial (C): Tamb = 0C to +70C Industrial (I): Tamb = -40C to +85C Symbol Min Max Units Remarks Address Set-Up Time tAS 10 -- ns Address Hold Time tAH 50 -- ns Data Set-Up Time tDS 50 -- ns Data Hold Time tDH 10 -- ns Write Pulse Width tWPL 100 -- ns Write Pulse High Time tWPH 50 -- ns OE Hold Time tOEH 10 -- ns OE Set-Up Time tOES 10 -- ns Data Valid Time tDV -- 1000 ns Note 2 Write Cycle Time (28C16A) tWC -- 1 ms 0.5 ms typical Write Cycle Time (28C16AF) tWC -- 200 s 100 s typical Note 1 Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the positive edge of CE or WE, whichever occurs first. 2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH after the positive edge of WE or CE, whichever occurs first. FIGURE 1-2: PROGRAMMING WAVEFORMS VIH Address VIL VIH t AS t AH t WPL CE, WE VIL t DV Data In t DS t DH VIH VIL t OES VIH OE VIL t OEH DS11125G-page 4 1996 Microchip Technology Inc. 28C16A FIGURE 1-3: DATA POLLING WAVEFORMS VIH Last Written Address Valid Address Valid Address VIL t ACC VIH CE t CE VIL t WPH VIH t WPL WE VIL t OE VIH OE VIL t DV VIH Data In Valid Data VIL I/O7 Out True Data Out t WC FIGURE 1-4: CHIP CLEAR WAVEFORMS VIH CE VIL VH OE VIH tS tH tW VIH WE tW = 10ms tS = tH = 1s VH = 12.0V 0.5V VIL TABLE 1-5: SUPPLEMENTARY CONTROL CE OE WE A9 VCC Chip Clear VIL VH VIL X VCC Extra Row Read VIL VIL VIH A9 = VH VCC Data Out Extra Row Write * VIH * A9 = VH VCC Data In Mode Note 1: VH = 12.0V0.5V 1996 Microchip Technology Inc. I/OI * Pulsed per programming waveforms. DS11125G-page 5 28C16A 2.0 DEVICE OPERATION 2.4 The Microchip Technology Inc. 28C16A has four basic modes of operation--read, standby, write inhibit, and byte write--as outlined in the following table. Operation Mode CE OE WE I/O Read L L H DOUT Standby H X X High Z Write Inhibit H X X High Z Write Inhibit X L X High Z Write Inhibit X X H High Z Byte Write L H L DIN Byte Clear Automatic Before Each "Write" X = Any TTL level. 2.1 2.2 The 28C16A has a write cycle similar to that of a Static RAM. The write cycle is completely self-timed and initiated by a low going pulse on the WE pin. On the falling edge of WE, the address information is latched. On rising edge, the data and the control pins (CE and OE) are latched. 2.5 Data Polling The 28C16A features Data polling to signal the completion of a byte write cycle. During a write cycle, an attempted read of the last byte written results in the data complement of I/O7 (I/O0 to I/O6 are indeterminable). After completion of the write cycle, true data is available. Data polling allows a simple read/compare operation to determine the status of the chip eliminating the need for external hardware. 2.6 Read Mode The 28C16A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and is used to gate data to the output pins independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the output tOE after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC-tOE. Write Mode Electronic Signature for Device Identification An extra row of 32 bytes of EEPROM memory is available to the user for device identification. By raising A9 to 12V 0.5V and using address locations 7EO to 7FF, the additional bytes can be written to or read from in the same manner as the regular memory array. 2.7 Chip Clear All data may be cleared to 1's in a chip clear cycle by raising OE to 12 volts and bringing the WE and CE low. This procedure clears all data, except for the extra row. Standby Mode The 28C16A is placed in the standby mode by applying a high signal to the CE input. When in the standby mode, the outputs are in a high impedance state, independent of the OE input. 2.3 Data Protection In order to ensure data integrity, especially during critical power-up and power-down transitions, the following enhanced data protection circuits are incorporated: First, an internal VCC detect (3.3 volts typical) will inhibit the initiation of non-volatile programming operation when VCC is less than the VCC detect circuit trip. Second, there is a WE filtering circuit that prevents WE pulses of less than 10 ns duration from initiating a write cycle. Third, holding WE or CE high or OE low, inhibits a write cycle during power-on and power-off (VCC). DS11125G-page 6 1996 Microchip Technology Inc. 28C16A 28C16A Product Identification System To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices. 28C16A F T - 15 I /P Package: Temperature Range: Access Time: = = = = Plastic Leaded Chip Carrier (PLCC) Plastic DIP (600 mil) Thin Small Outline Package (TSOP) 8x20mm Very Small Outline Package (VSOP) 8x13.4mm Blank = 0C to +70C I = -40C to +85C 15 20 25 150 ns 200 ns 250 ns Shipping: Blank T Option: Blank = twc = 1ms F = twc = 200 s Device: 1996 Microchip Technology Inc. L P TS VS 28C16A Tube Tape and Reel "L" only 2K x 8 CMOS EEPROM DS11125G-page 7 WORLDWIDE SALES & SERVICE AMERICAS ASIA/PACIFIC EUROPE Corporate Office Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 602 786-7200 Fax: 602 786-7277 Technical Support: 602 786-7627 Web: http://www.microchip.com Atlanta Microchip Technology Inc. 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770 640-0034 Fax: 770 640-0307 Boston Microchip Technology Inc. 5 Mount Royal Avenue Marlborough, MA 01752 Tel: 508 480-9990 Fax: 508 480-8575 Chicago Microchip Technology Inc. 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 708 285-0071 Fax: 708 285-0075 Dallas Microchip Technology Inc. 14651 Dallas Parkway, Suite 816 Dallas, TX 75240-8809 Tel: 972 991-7177 Fax: 972 991-8588 Dayton Microchip Technology Inc. Suite 150 Two Prestige Place Miamisburg, OH 45342 Tel: 513 291-1654 Fax: 513 291-9175 Los Angeles Microchip Technology Inc. 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 714 263-1888 Fax: 714 263-1338 New York Microchip Technmgy Inc. 150 Motor Parkway, Suite 416 Hauppauge, NY 11788 Tel: 516 273-5305 Fax: 516 273-5335 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408 436-7950 Fax: 408 436-7955 Toronto Microchip Technology Inc. 5925 Airport Road, Suite 200 Mississauga, Ontario L4V 1W1, Canada Tel: 905 405-6279 Fax: 905 405-6253 China Microchip Technology Unit 406 of Shanghai Golden Bridge Bldg. 2077 Yan'an Road West, Hongiao District Shanghai, Peoples Republic of China Tel: 86 21 6275 5700 Fax: 011 86 21 6275 5060 Hong Kong Microchip Technology RM 3801B, Tower Two Metroplaza 223 Hing Fong Road Kwai Fong, N.T. Hong Kong Tel: 852 2 401 1200 Fax: 852 2 401 3431 India Microchip Technology No. 6, Legacy, Convent Road Bangalore 560 025 India Tel: 91 80 526 3148 Fax: 91 80 559 9840 Korea Microchip Technology 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku, Seoul, Korea Tel: 82 2 554 7200 Fax: 82 2 558 5934 Singapore Microchip Technology 200 Middle Road #10-03 Prime Centre Singapore 188980 Tel: 65 334 8870 Fax: 65 334 8850 Taiwan, R.O.C Microchip Technology 10F-1C 207 Tung Hua North Road Taipei, Taiwan, ROC Tel: 886 2 717 7175 Fax: 886 2 545 0139 United Kingdom Arizona Microchip Technology Ltd. Unit 6, The Courtyard Meadow Bank, Furlong Road Bourne End, Buckinghamshire SL8 5AJ Tel: 44 1628 850303 Fax: 44 1628 850178 France Arizona Microchip Technology SARL Zone Industrielle de la Bonde 2 Rue du Buisson aux Fraises 91300 Massy - France Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79 Germany Arizona Microchip Technology GmbH Gustav-Heinemann-Ring 125 D-81739 Muenchen, Germany Tel: 49 89 627 144 0 Fax: 49 89 627 144 44 Italy Arizona Microchip Technology SRL Centro Direzionale Colleone Pas Taurus 1 Viale Colleoni 1 20041 Agrate Brianza Milan Italy Tel: 39 39 6899939 Fax: 39 39 689 9883 JAPAN Microchip Technology Intl. Inc. Benex S-1 6F 3-18-20, Shin Yokohama Kohoku-Ku, Yokohama Kanagawa 222 Japan Tel: 81 45 471 6166 Fax: 81 45 471 6122 9/3/96 All rights reserved. 1996, Microchip Technology Incorporated, USA. 9/96 Printed on recycled paper. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies. DS11125G-page 8 1996 Microchip Technology Inc.